CN104974759B - 由卤素盐稳定化的量子点及其制造方法 - Google Patents
由卤素盐稳定化的量子点及其制造方法 Download PDFInfo
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- CN104974759B CN104974759B CN201510144596.7A CN201510144596A CN104974759B CN 104974759 B CN104974759 B CN 104974759B CN 201510144596 A CN201510144596 A CN 201510144596A CN 104974759 B CN104974759 B CN 104974759B
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- Prior art keywords
- indium
- nitride
- zinc
- gallium
- cadmium
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 126
- -1 halide salts Chemical class 0.000 title claims abstract description 73
- 238000000034 method Methods 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 150000001875 compounds Chemical class 0.000 claims abstract description 34
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 44
- 229910052733 gallium Inorganic materials 0.000 claims description 41
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 33
- 150000007524 organic acids Chemical class 0.000 claims description 32
- 239000002243 precursor Substances 0.000 claims description 32
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 30
- 229910052782 aluminium Inorganic materials 0.000 claims description 23
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 23
- 229910052738 indium Inorganic materials 0.000 claims description 21
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 20
- AOPJVJYWEDDOBI-UHFFFAOYSA-N azanylidynephosphane Chemical compound P#N AOPJVJYWEDDOBI-UHFFFAOYSA-N 0.000 claims description 18
- 229910002601 GaN Inorganic materials 0.000 claims description 17
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 17
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 17
- 235000019270 ammonium chloride Nutrition 0.000 claims description 15
- 150000002366 halogen compounds Chemical class 0.000 claims description 15
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 15
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 14
- 239000011669 selenium Substances 0.000 claims description 14
- 239000002245 particle Substances 0.000 claims description 13
- 229910052698 phosphorus Inorganic materials 0.000 claims description 13
- 239000011574 phosphorus Substances 0.000 claims description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 12
- 229910052714 tellurium Inorganic materials 0.000 claims description 12
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 11
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 11
- 229910052787 antimony Inorganic materials 0.000 claims description 11
- 229910052711 selenium Inorganic materials 0.000 claims description 11
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 10
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 claims description 10
- YVUZUKYBUMROPQ-UHFFFAOYSA-N mercury zinc Chemical compound [Zn].[Hg] YVUZUKYBUMROPQ-UHFFFAOYSA-N 0.000 claims description 10
- 239000013110 organic ligand Substances 0.000 claims description 10
- 229910052725 zinc Inorganic materials 0.000 claims description 10
- 239000011701 zinc Substances 0.000 claims description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims description 9
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 9
- 230000008859 change Effects 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 9
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 9
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 8
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 8
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 claims description 8
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 claims description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 7
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 7
- LVQULNGDVIKLPK-UHFFFAOYSA-N aluminium antimonide Chemical compound [Sb]#[Al] LVQULNGDVIKLPK-UHFFFAOYSA-N 0.000 claims description 7
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052793 cadmium Inorganic materials 0.000 claims description 7
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 claims description 7
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 claims description 7
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 claims description 7
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 7
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Substances [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 claims description 7
- QIHHYQWNYKOHEV-UHFFFAOYSA-N 4-tert-butyl-3-nitrobenzoic acid Chemical compound CC(C)(C)C1=CC=C(C(O)=O)C=C1[N+]([O-])=O QIHHYQWNYKOHEV-UHFFFAOYSA-N 0.000 claims description 6
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 6
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 claims description 6
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- IPBWGTSZTNICPQ-UHFFFAOYSA-N [Se].[Cd].[Hg] Chemical compound [Se].[Cd].[Hg] IPBWGTSZTNICPQ-UHFFFAOYSA-N 0.000 claims description 6
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 claims description 6
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 6
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 6
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 claims description 6
- GHVNFZFCNZKVNT-UHFFFAOYSA-N decanoic acid Chemical compound CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 claims description 6
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 6
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 6
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 6
- 229910000474 mercury oxide Inorganic materials 0.000 claims description 6
- UKWHYYKOEPRTIC-UHFFFAOYSA-N mercury(ii) oxide Chemical compound [Hg]=O UKWHYYKOEPRTIC-UHFFFAOYSA-N 0.000 claims description 6
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 6
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 claims description 6
- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 claims description 6
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 claims description 6
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 claims description 6
- UQMZPFKLYHOJDL-UHFFFAOYSA-N zinc;cadmium(2+);disulfide Chemical compound [S-2].[S-2].[Zn+2].[Cd+2] UQMZPFKLYHOJDL-UHFFFAOYSA-N 0.000 claims description 6
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 5
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 5
- 239000005083 Zinc sulfide Substances 0.000 claims description 5
- SWLVFNYSXGMGBS-UHFFFAOYSA-N ammonium bromide Chemical compound [NH4+].[Br-] SWLVFNYSXGMGBS-UHFFFAOYSA-N 0.000 claims description 5
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 5
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 claims description 5
- YQMLDSWXEQOSPP-UHFFFAOYSA-N selanylidenemercury Chemical compound [Hg]=[Se] YQMLDSWXEQOSPP-UHFFFAOYSA-N 0.000 claims description 5
- JRMUNVKIHCOMHV-UHFFFAOYSA-M tetrabutylammonium bromide Chemical compound [Br-].CCCC[N+](CCCC)(CCCC)CCCC JRMUNVKIHCOMHV-UHFFFAOYSA-M 0.000 claims description 5
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims description 4
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 claims description 4
- 239000001103 potassium chloride Substances 0.000 claims description 4
- 235000011164 potassium chloride Nutrition 0.000 claims description 4
- 239000011780 sodium chloride Substances 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- JKNHZOAONLKYQL-UHFFFAOYSA-K tribromoindigane Chemical compound Br[In](Br)Br JKNHZOAONLKYQL-UHFFFAOYSA-K 0.000 claims description 4
- UMJICYDOGPFMOB-UHFFFAOYSA-N zinc;cadmium(2+);oxygen(2-) Chemical compound [O-2].[O-2].[Zn+2].[Cd+2] UMJICYDOGPFMOB-UHFFFAOYSA-N 0.000 claims description 4
- XZXYQEHISUMZAT-UHFFFAOYSA-N 2-[(2-hydroxy-5-methylphenyl)methyl]-4-methylphenol Chemical compound CC1=CC=C(O)C(CC=2C(=CC=C(C)C=2)O)=C1 XZXYQEHISUMZAT-UHFFFAOYSA-N 0.000 claims description 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 3
- 239000005632 Capric acid (CAS 334-48-5) Substances 0.000 claims description 3
- 229910005542 GaSb Inorganic materials 0.000 claims description 3
- 229910002665 PbTe Inorganic materials 0.000 claims description 3
- XSKUQABTDMBZCN-UHFFFAOYSA-N [Sb].[As].[In] Chemical compound [Sb].[As].[In] XSKUQABTDMBZCN-UHFFFAOYSA-N 0.000 claims description 3
- ICLJBBPQQFULIU-UHFFFAOYSA-N [Sb].[P].[In] Chemical compound [Sb].[P].[In] ICLJBBPQQFULIU-UHFFFAOYSA-N 0.000 claims description 3
- XNVJGKKANSYGKB-UHFFFAOYSA-N [Zn].[Se].[Cd] Chemical compound [Zn].[Se].[Cd] XNVJGKKANSYGKB-UHFFFAOYSA-N 0.000 claims description 3
- 235000011054 acetic acid Nutrition 0.000 claims description 3
- 229940107816 ammonium iodide Drugs 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 claims description 3
- YEYFPVZHOBESQQ-UHFFFAOYSA-N cadmium;sulfanylidenemercury Chemical compound [Cd].[Hg]=S YEYFPVZHOBESQQ-UHFFFAOYSA-N 0.000 claims description 3
- 235000019253 formic acid Nutrition 0.000 claims description 3
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 claims description 3
- DFIYWQBRYUCBMH-UHFFFAOYSA-N oxogermane Chemical compound [GeH2]=O DFIYWQBRYUCBMH-UHFFFAOYSA-N 0.000 claims description 3
- 235000019260 propionic acid Nutrition 0.000 claims description 3
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 3
- RJAVVKVGAZUUIE-UHFFFAOYSA-N stibanylidynephosphane Chemical compound [Sb]#P RJAVVKVGAZUUIE-UHFFFAOYSA-N 0.000 claims description 3
- UQMCSSLUTFUDSN-UHFFFAOYSA-N sulfanylidenegermane Chemical compound [GeH2]=S UQMCSSLUTFUDSN-UHFFFAOYSA-N 0.000 claims description 3
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 claims description 3
- RMUKCGUDVKEQPL-UHFFFAOYSA-K triiodoindigane Chemical compound I[In](I)I RMUKCGUDVKEQPL-UHFFFAOYSA-K 0.000 claims description 3
- 229940005605 valeric acid Drugs 0.000 claims description 3
- NWJUKFMMXJODIL-UHFFFAOYSA-N zinc cadmium(2+) selenium(2-) Chemical compound [Zn+2].[Se-2].[Se-2].[Cd+2] NWJUKFMMXJODIL-UHFFFAOYSA-N 0.000 claims description 3
- 229910017115 AlSb Inorganic materials 0.000 claims description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 2
- RFEZDAWHRZWBPV-UHFFFAOYSA-N [Hg](=S)=O Chemical compound [Hg](=S)=O RFEZDAWHRZWBPV-UHFFFAOYSA-N 0.000 claims description 2
- CEKJAYFBQARQNG-UHFFFAOYSA-N cadmium zinc Chemical compound [Zn].[Cd] CEKJAYFBQARQNG-UHFFFAOYSA-N 0.000 claims description 2
- IGUWUAGBIVHKDA-UHFFFAOYSA-N cadmium;sulfanylidenezinc Chemical compound [Zn].[Cd]=S IGUWUAGBIVHKDA-UHFFFAOYSA-N 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims 15
- 230000003647 oxidation Effects 0.000 claims 8
- 238000007254 oxidation reaction Methods 0.000 claims 8
- 239000005864 Sulphur Substances 0.000 claims 7
- 229910017083 AlN Inorganic materials 0.000 claims 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 5
- 229910052760 oxygen Inorganic materials 0.000 claims 5
- 239000001301 oxygen Substances 0.000 claims 5
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims 4
- 229910052753 mercury Inorganic materials 0.000 claims 4
- KBPGBEFNGHFRQN-UHFFFAOYSA-N bis(selanylidene)tin Chemical compound [Se]=[Sn]=[Se] KBPGBEFNGHFRQN-UHFFFAOYSA-N 0.000 claims 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 3
- 229910052737 gold Inorganic materials 0.000 claims 3
- 239000010931 gold Substances 0.000 claims 3
- 239000000126 substance Substances 0.000 claims 3
- 238000005987 sulfurization reaction Methods 0.000 claims 3
- 229910004262 HgTe Inorganic materials 0.000 claims 1
- WTCBONOLBHEDIL-UHFFFAOYSA-M Sodium iodate Chemical compound [Na+].[O-]I(=O)=O WTCBONOLBHEDIL-UHFFFAOYSA-M 0.000 claims 1
- GHBXKGCPYWBGLB-UHFFFAOYSA-H [Al+3].[In+3].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O Chemical compound [Al+3].[In+3].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O GHBXKGCPYWBGLB-UHFFFAOYSA-H 0.000 claims 1
- JQXDHEPOVSWLIR-UHFFFAOYSA-N [Ge]=S.[O] Chemical compound [Ge]=S.[O] JQXDHEPOVSWLIR-UHFFFAOYSA-N 0.000 claims 1
- WBQCYHBKOHGNQI-UHFFFAOYSA-N [N].[As] Chemical compound [N].[As] WBQCYHBKOHGNQI-UHFFFAOYSA-N 0.000 claims 1
- FUJVNUZCDMWTLU-UHFFFAOYSA-N [O-2].O.S.[Cd+2] Chemical compound [O-2].O.S.[Cd+2] FUJVNUZCDMWTLU-UHFFFAOYSA-N 0.000 claims 1
- BECGPAPCGOJSOT-UHFFFAOYSA-N [O-2].O.S.[Zn+2] Chemical compound [O-2].O.S.[Zn+2] BECGPAPCGOJSOT-UHFFFAOYSA-N 0.000 claims 1
- WWMMWLRYCXLQNM-UHFFFAOYSA-N [O-2].O.[Zn+2].[SeH2] Chemical compound [O-2].O.[Zn+2].[SeH2] WWMMWLRYCXLQNM-UHFFFAOYSA-N 0.000 claims 1
- JHFCVRNLWYSLOL-UHFFFAOYSA-N [P].[As].[In] Chemical compound [P].[As].[In] JHFCVRNLWYSLOL-UHFFFAOYSA-N 0.000 claims 1
- LGOGWRFWPHMDLS-UHFFFAOYSA-N [S-2].S.[Zn+2].[SeH2] Chemical compound [S-2].S.[Zn+2].[SeH2] LGOGWRFWPHMDLS-UHFFFAOYSA-N 0.000 claims 1
- 125000005211 alkyl trimethyl ammonium group Chemical group 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- OBETXYAYXDNJHR-UHFFFAOYSA-N alpha-ethylcaproic acid Natural products CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 claims 1
- DLISVFCFLGSHAB-UHFFFAOYSA-N antimony arsenic Chemical compound [As].[Sb] DLISVFCFLGSHAB-UHFFFAOYSA-N 0.000 claims 1
- PGWFQHBXMJMAPN-UHFFFAOYSA-N ctk4b5078 Chemical compound [Cd].OS(=O)(=O)[Se]S(O)(=O)=O PGWFQHBXMJMAPN-UHFFFAOYSA-N 0.000 claims 1
- POULHZVOKOAJMA-UHFFFAOYSA-M dodecanoate Chemical compound CCCCCCCCCCCC([O-])=O POULHZVOKOAJMA-UHFFFAOYSA-M 0.000 claims 1
- 229940070765 laurate Drugs 0.000 claims 1
- NSRBDSZKIKAZHT-UHFFFAOYSA-N tellurium zinc Chemical compound [Zn].[Te] NSRBDSZKIKAZHT-UHFFFAOYSA-N 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 abstract description 16
- 235000002639 sodium chloride Nutrition 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 17
- 239000010410 layer Substances 0.000 description 12
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 12
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 10
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 10
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 10
- 239000005642 Oleic acid Substances 0.000 description 10
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 10
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 10
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 9
- 238000004458 analytical method Methods 0.000 description 9
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 9
- 239000002904 solvent Substances 0.000 description 8
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 229910005540 GaP Inorganic materials 0.000 description 6
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 6
- 239000003446 ligand Substances 0.000 description 6
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 description 6
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 5
- IBKBIJITWRZZBB-UHFFFAOYSA-N azanylidynestibane Chemical compound [Sb]#N IBKBIJITWRZZBB-UHFFFAOYSA-N 0.000 description 5
- FPHIOHCCQGUGKU-UHFFFAOYSA-L difluorolead Chemical compound F[Pb]F FPHIOHCCQGUGKU-UHFFFAOYSA-L 0.000 description 5
- 235000005985 organic acids Nutrition 0.000 description 5
- 238000004627 transmission electron microscopy Methods 0.000 description 5
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 description 4
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 4
- IHGSAQHSAGRWNI-UHFFFAOYSA-N 1-(4-bromophenyl)-2,2,2-trifluoroethanone Chemical compound FC(F)(F)C(=O)C1=CC=C(Br)C=C1 IHGSAQHSAGRWNI-UHFFFAOYSA-N 0.000 description 4
- JYDZYJYYCYREGF-UHFFFAOYSA-N [Cd].[Se]=S Chemical compound [Cd].[Se]=S JYDZYJYYCYREGF-UHFFFAOYSA-N 0.000 description 4
- CHQKVCSVJIMMRE-UHFFFAOYSA-N [Pb]=S.[Sn] Chemical compound [Pb]=S.[Sn] CHQKVCSVJIMMRE-UHFFFAOYSA-N 0.000 description 4
- XIHUOOUEROSTGL-UHFFFAOYSA-N [Pb]=[Se].[Sn] Chemical compound [Pb]=[Se].[Sn] XIHUOOUEROSTGL-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 4
- ZASWJUOMEGBQCQ-UHFFFAOYSA-L dibromolead Chemical compound Br[Pb]Br ZASWJUOMEGBQCQ-UHFFFAOYSA-L 0.000 description 4
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 4
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 4
- 150000004820 halides Chemical group 0.000 description 4
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 4
- VCEXCCILEWFFBG-UHFFFAOYSA-N mercury telluride Chemical compound [Hg]=[Te] VCEXCCILEWFFBG-UHFFFAOYSA-N 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- MFIWAIVSOUGHLI-UHFFFAOYSA-N selenium;tin Chemical compound [Sn]=[Se] MFIWAIVSOUGHLI-UHFFFAOYSA-N 0.000 description 4
- QXKXDIKCIPXUPL-UHFFFAOYSA-N sulfanylidenemercury Chemical compound [Hg]=S QXKXDIKCIPXUPL-UHFFFAOYSA-N 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- AFNRRBXCCXDRPS-UHFFFAOYSA-N tin(ii) sulfide Chemical compound [Sn]=S AFNRRBXCCXDRPS-UHFFFAOYSA-N 0.000 description 4
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 4
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical class C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 3
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 3
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 description 3
- RPPBZEBXAAZZJH-UHFFFAOYSA-N cadmium telluride Chemical compound [Te]=[Cd] RPPBZEBXAAZZJH-UHFFFAOYSA-N 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 239000011258 core-shell material Substances 0.000 description 3
- 238000007872 degassing Methods 0.000 description 3
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 3
- HWSZZLVAJGOAAY-UHFFFAOYSA-L lead(II) chloride Chemical compound Cl[Pb]Cl HWSZZLVAJGOAAY-UHFFFAOYSA-L 0.000 description 3
- IYDNQWWOZQLMRH-UHFFFAOYSA-N octadec-1-yne Chemical compound CCCCCCCCCCCCCCCCC#C IYDNQWWOZQLMRH-UHFFFAOYSA-N 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 239000011593 sulfur Substances 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- DOBUSJIVSSJEDA-UHFFFAOYSA-L 1,3-dioxa-2$l^{6}-thia-4-mercuracyclobutane 2,2-dioxide Chemical compound [Hg+2].[O-]S([O-])(=O)=O DOBUSJIVSSJEDA-UHFFFAOYSA-L 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- 239000005635 Caprylic acid (CAS 124-07-2) Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 239000005639 Lauric acid Substances 0.000 description 2
- BTWVLFJYEVGKNZ-UHFFFAOYSA-N S=O.[Cd] Chemical compound S=O.[Cd] BTWVLFJYEVGKNZ-UHFFFAOYSA-N 0.000 description 2
- NPAQUWKUZAIRJE-UHFFFAOYSA-N S=[Se].[Zn].[Cd] Chemical compound S=[Se].[Zn].[Cd] NPAQUWKUZAIRJE-UHFFFAOYSA-N 0.000 description 2
- VPGGVYLVWBVIDM-UHFFFAOYSA-N [Cd].[Se]=O Chemical compound [Cd].[Se]=O VPGGVYLVWBVIDM-UHFFFAOYSA-N 0.000 description 2
- OYPNTIHSIDIKDK-UHFFFAOYSA-N [Se]=O.[Hg] Chemical compound [Se]=O.[Hg] OYPNTIHSIDIKDK-UHFFFAOYSA-N 0.000 description 2
- VUZKXRBWTDVPTJ-UHFFFAOYSA-N [Se]=O.[Hg].[Cd] Chemical compound [Se]=O.[Hg].[Cd] VUZKXRBWTDVPTJ-UHFFFAOYSA-N 0.000 description 2
- QROPVBJLKDAXMP-UHFFFAOYSA-N [Se]=O.[Hg].[Zn] Chemical compound [Se]=O.[Hg].[Zn] QROPVBJLKDAXMP-UHFFFAOYSA-N 0.000 description 2
- XSLRACGWXTVEJL-UHFFFAOYSA-N [Se]=O.[Zn].[Cd] Chemical compound [Se]=O.[Zn].[Cd] XSLRACGWXTVEJL-UHFFFAOYSA-N 0.000 description 2
- UVMSHMGWTXISMB-UHFFFAOYSA-N [Se]=S.[Hg] Chemical compound [Se]=S.[Hg] UVMSHMGWTXISMB-UHFFFAOYSA-N 0.000 description 2
- HNGRQOWHVIGSSY-UHFFFAOYSA-N [Se]=S.[Hg].[Cd] Chemical compound [Se]=S.[Hg].[Cd] HNGRQOWHVIGSSY-UHFFFAOYSA-N 0.000 description 2
- PEZSORSEDWZOSK-UHFFFAOYSA-N [Se]=S.[Sn] Chemical compound [Se]=S.[Sn] PEZSORSEDWZOSK-UHFFFAOYSA-N 0.000 description 2
- MKPUDENCPPDXJM-UHFFFAOYSA-N [Se]=S.[Zn].[Hg] Chemical compound [Se]=S.[Zn].[Hg] MKPUDENCPPDXJM-UHFFFAOYSA-N 0.000 description 2
- JWUIMIOWSYWXBQ-UHFFFAOYSA-N [Sn].O=S Chemical compound [Sn].O=S JWUIMIOWSYWXBQ-UHFFFAOYSA-N 0.000 description 2
- GBDFAWFSNGOXAF-UHFFFAOYSA-N [Sn].[Se]=O Chemical compound [Sn].[Se]=O GBDFAWFSNGOXAF-UHFFFAOYSA-N 0.000 description 2
- XCAOVLDTJUSKAK-UHFFFAOYSA-N [Zn].[Se].[Hg] Chemical compound [Zn].[Se].[Hg] XCAOVLDTJUSKAK-UHFFFAOYSA-N 0.000 description 2
- ZGCYTEQAFUIHAS-UHFFFAOYSA-N [Zn].[Se]=O Chemical compound [Zn].[Se]=O ZGCYTEQAFUIHAS-UHFFFAOYSA-N 0.000 description 2
- IPCGGVKCDVFDQU-UHFFFAOYSA-N [Zn].[Se]=S Chemical compound [Zn].[Se]=S IPCGGVKCDVFDQU-UHFFFAOYSA-N 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 229910052795 boron group element Inorganic materials 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- KPWJBEFBFLRCLH-UHFFFAOYSA-L cadmium bromide Chemical compound Br[Cd]Br KPWJBEFBFLRCLH-UHFFFAOYSA-L 0.000 description 2
- OKIIEJOIXGHUKX-UHFFFAOYSA-L cadmium iodide Chemical compound [Cd+2].[I-].[I-] OKIIEJOIXGHUKX-UHFFFAOYSA-L 0.000 description 2
- LFSRKTSNRGEALP-UHFFFAOYSA-N cadmium oxomercury Chemical compound [Hg]=O.[Cd] LFSRKTSNRGEALP-UHFFFAOYSA-N 0.000 description 2
- ZYCAIJWJKAGBLN-UHFFFAOYSA-N cadmium(2+);mercury(2+);disulfide Chemical compound [S-2].[S-2].[Cd+2].[Hg+2] ZYCAIJWJKAGBLN-UHFFFAOYSA-N 0.000 description 2
- 229910052800 carbon group element Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- RVIXKDRPFPUUOO-UHFFFAOYSA-N dimethylselenide Chemical compound C[Se]C RVIXKDRPFPUUOO-UHFFFAOYSA-N 0.000 description 2
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 2
- JRBPAEWTRLWTQC-UHFFFAOYSA-N dodecylamine Chemical compound CCCCCCCCCCCCN JRBPAEWTRLWTQC-UHFFFAOYSA-N 0.000 description 2
- 229940044658 gallium nitrate Drugs 0.000 description 2
- 229910001849 group 12 element Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- DCAYPVUWAIABOU-UHFFFAOYSA-N hexadecane Chemical compound CCCCCCCCCCCCCCCC DCAYPVUWAIABOU-UHFFFAOYSA-N 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000005457 ice water Substances 0.000 description 2
- 229940046892 lead acetate Drugs 0.000 description 2
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 2
- 229910000370 mercury sulfate Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 229960002446 octanoic acid Drugs 0.000 description 2
- SJEFKIVIMJHMLR-UHFFFAOYSA-N oxomercury;zinc Chemical compound [Zn].[Hg]=O SJEFKIVIMJHMLR-UHFFFAOYSA-N 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 125000003748 selenium group Chemical group *[Se]* 0.000 description 2
- 229960005265 selenium sulfide Drugs 0.000 description 2
- 235000009518 sodium iodide Nutrition 0.000 description 2
- YOXKVLXOLWOQBK-UHFFFAOYSA-N sulfur monoxide zinc Chemical compound [Zn].S=O YOXKVLXOLWOQBK-UHFFFAOYSA-N 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- BGHCVCJVXZWKCC-UHFFFAOYSA-N tetradecane Chemical compound CCCCCCCCCCCCCC BGHCVCJVXZWKCC-UHFFFAOYSA-N 0.000 description 2
- ZAKSIRCIOXDVPT-UHFFFAOYSA-N trioctyl(selanylidene)-$l^{5}-phosphane Chemical compound CCCCCCCCP(=[Se])(CCCCCCCC)CCCCCCCC ZAKSIRCIOXDVPT-UHFFFAOYSA-N 0.000 description 2
- RSJKGSCJYJTIGS-UHFFFAOYSA-N undecane Chemical compound CCCCCCCCCCC RSJKGSCJYJTIGS-UHFFFAOYSA-N 0.000 description 2
- VNDYJBBGRKZCSX-UHFFFAOYSA-L zinc bromide Chemical compound Br[Zn]Br VNDYJBBGRKZCSX-UHFFFAOYSA-L 0.000 description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- UAYWVJHJZHQCIE-UHFFFAOYSA-L zinc iodide Chemical compound I[Zn]I UAYWVJHJZHQCIE-UHFFFAOYSA-L 0.000 description 2
- HWLMPLVKPZILMO-UHFFFAOYSA-N zinc mercury(1+) selenium(2-) Chemical compound [Zn+2].[Se-2].[Hg+] HWLMPLVKPZILMO-UHFFFAOYSA-N 0.000 description 2
- MIVMCKHFFYPKIC-UHFFFAOYSA-N zinc mercury(1+) sulfide Chemical compound [Hg+].[S-2].[Zn+2] MIVMCKHFFYPKIC-UHFFFAOYSA-N 0.000 description 2
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 description 2
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 1
- OMAWWKIPXLIPDE-UHFFFAOYSA-N (ethyldiselanyl)ethane Chemical compound CC[Se][Se]CC OMAWWKIPXLIPDE-UHFFFAOYSA-N 0.000 description 1
- ZVYYAYJIGYODSD-LNTINUHCSA-K (z)-4-bis[[(z)-4-oxopent-2-en-2-yl]oxy]gallanyloxypent-3-en-2-one Chemical compound [Ga+3].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O ZVYYAYJIGYODSD-LNTINUHCSA-K 0.000 description 1
- QGLWBTPVKHMVHM-KTKRTIGZSA-N (z)-octadec-9-en-1-amine Chemical compound CCCCCCCC\C=C/CCCCCCCCN QGLWBTPVKHMVHM-KTKRTIGZSA-N 0.000 description 1
- MFEVGQHCNVXMER-UHFFFAOYSA-L 1,3,2$l^{2}-dioxaplumbetan-4-one Chemical compound [Pb+2].[O-]C([O-])=O MFEVGQHCNVXMER-UHFFFAOYSA-L 0.000 description 1
- XIOUDVJTOYVRTB-UHFFFAOYSA-N 1-(1-adamantyl)-3-aminothiourea Chemical compound C1C(C2)CC3CC2CC1(NC(=S)NN)C3 XIOUDVJTOYVRTB-UHFFFAOYSA-N 0.000 description 1
- FJLUATLTXUNBOT-UHFFFAOYSA-N 1-Hexadecylamine Chemical compound CCCCCCCCCCCCCCCCN FJLUATLTXUNBOT-UHFFFAOYSA-N 0.000 description 1
- RMSOEGBYNWXXBG-UHFFFAOYSA-N 1-chloronaphthalen-2-ol Chemical compound C1=CC=CC2=C(Cl)C(O)=CC=C21 RMSOEGBYNWXXBG-UHFFFAOYSA-N 0.000 description 1
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 1
- IGPFOKFDBICQMC-UHFFFAOYSA-N 3-phenylmethoxyaniline Chemical compound NC1=CC=CC(OCC=2C=CC=CC=2)=C1 IGPFOKFDBICQMC-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- YHMQHCWLCGTNTC-UHFFFAOYSA-N C(CCCCCCC)[N+](CCCCCCCC)(CCCCCCCC)[S-] Chemical compound C(CCCCCCC)[N+](CCCCCCCC)(CCCCCCCC)[S-] YHMQHCWLCGTNTC-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910000003 Lead carbonate Inorganic materials 0.000 description 1
- NDLAWHCITGPRJY-UHFFFAOYSA-M O.O.O.Cl(=O)(=O)(=O)[O-].[Hg+] Chemical compound O.O.O.Cl(=O)(=O)(=O)[O-].[Hg+] NDLAWHCITGPRJY-UHFFFAOYSA-M 0.000 description 1
- XURCIPRUUASYLR-UHFFFAOYSA-N Omeprazole sulfide Chemical compound N=1C2=CC(OC)=CC=C2NC=1SCC1=NC=C(C)C(OC)=C1C XURCIPRUUASYLR-UHFFFAOYSA-N 0.000 description 1
- FMRLDPWIRHBCCC-UHFFFAOYSA-L Zinc carbonate Chemical compound [Zn+2].[O-]C([O-])=O FMRLDPWIRHBCCC-UHFFFAOYSA-L 0.000 description 1
- BHHYHSUAOQUXJK-UHFFFAOYSA-L Zinc fluoride Inorganic materials F[Zn]F BHHYHSUAOQUXJK-UHFFFAOYSA-L 0.000 description 1
- URRHWTYOQNLUKY-UHFFFAOYSA-N [AlH3].[P] Chemical compound [AlH3].[P] URRHWTYOQNLUKY-UHFFFAOYSA-N 0.000 description 1
- FVDDGLWZGPLQEA-UHFFFAOYSA-N [Hg](=S)=O.[Cd] Chemical compound [Hg](=S)=O.[Cd] FVDDGLWZGPLQEA-UHFFFAOYSA-N 0.000 description 1
- XKHACUZPFNGGOQ-UHFFFAOYSA-N [Hg].S=O Chemical compound [Hg].S=O XKHACUZPFNGGOQ-UHFFFAOYSA-N 0.000 description 1
- DSRPCOZTDDQLBN-UHFFFAOYSA-N [Hg]=S.[Zn] Chemical compound [Hg]=S.[Zn] DSRPCOZTDDQLBN-UHFFFAOYSA-N 0.000 description 1
- AQHUBPVPFUXJFX-UHFFFAOYSA-N [I].[Cl-].[NH4+] Chemical compound [I].[Cl-].[NH4+] AQHUBPVPFUXJFX-UHFFFAOYSA-N 0.000 description 1
- YUWBVKYVJWNVLE-UHFFFAOYSA-N [N].[P] Chemical compound [N].[P] YUWBVKYVJWNVLE-UHFFFAOYSA-N 0.000 description 1
- RIXUKGPSFLKJFB-UHFFFAOYSA-N [Pb](=S)=[Se].[Sn] Chemical compound [Pb](=S)=[Se].[Sn] RIXUKGPSFLKJFB-UHFFFAOYSA-N 0.000 description 1
- TUBXXLMDISYBLW-UHFFFAOYSA-N [Sn].[Pb].S=[Se] Chemical compound [Sn].[Pb].S=[Se] TUBXXLMDISYBLW-UHFFFAOYSA-N 0.000 description 1
- VZMLVEGOODGDCT-UHFFFAOYSA-N acetic acid;phenylmercury Chemical compound CC(O)=O.[Hg]C1=CC=CC=C1 VZMLVEGOODGDCT-UHFFFAOYSA-N 0.000 description 1
- KQNKJJBFUFKYFX-UHFFFAOYSA-N acetic acid;trihydrate Chemical compound O.O.O.CC(O)=O KQNKJJBFUFKYFX-UHFFFAOYSA-N 0.000 description 1
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 1
- HDYRYUINDGQKMC-UHFFFAOYSA-M acetyloxyaluminum;dihydrate Chemical compound O.O.CC(=O)O[Al] HDYRYUINDGQKMC-UHFFFAOYSA-M 0.000 description 1
- WRYNUJYAXVDTCB-UHFFFAOYSA-M acetyloxymercury Chemical compound CC(=O)O[Hg] WRYNUJYAXVDTCB-UHFFFAOYSA-M 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- CAVCGVPGBKGDTG-UHFFFAOYSA-N alumanylidynemethyl(alumanylidynemethylalumanylidenemethylidene)alumane Chemical compound [Al]#C[Al]=C=[Al]C#[Al] CAVCGVPGBKGDTG-UHFFFAOYSA-N 0.000 description 1
- CECABOMBVQNBEC-UHFFFAOYSA-K aluminium iodide Chemical compound I[Al](I)I CECABOMBVQNBEC-UHFFFAOYSA-K 0.000 description 1
- DIZPMCHEQGEION-UHFFFAOYSA-H aluminium sulfate (anhydrous) Chemical compound [Al+3].[Al+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O DIZPMCHEQGEION-UHFFFAOYSA-H 0.000 description 1
- JGDITNMASUZKPW-UHFFFAOYSA-K aluminium trichloride hexahydrate Chemical compound O.O.O.O.O.O.Cl[Al](Cl)Cl JGDITNMASUZKPW-UHFFFAOYSA-K 0.000 description 1
- CEGOLXSVJUTHNZ-UHFFFAOYSA-K aluminium tristearate Chemical compound [Al+3].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O CEGOLXSVJUTHNZ-UHFFFAOYSA-K 0.000 description 1
- 229940009827 aluminum acetate Drugs 0.000 description 1
- 229940063656 aluminum chloride Drugs 0.000 description 1
- 229940009861 aluminum chloride hexahydrate Drugs 0.000 description 1
- 229940063655 aluminum stearate Drugs 0.000 description 1
- ZRGUXTGDSGGHLR-UHFFFAOYSA-K aluminum;triperchlorate Chemical compound [Al+3].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O ZRGUXTGDSGGHLR-UHFFFAOYSA-K 0.000 description 1
- UYJXRRSPUVSSMN-UHFFFAOYSA-P ammonium sulfide Chemical compound [NH4+].[NH4+].[S-2] UYJXRRSPUVSSMN-UHFFFAOYSA-P 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- HQMRIBYCTLBDAK-UHFFFAOYSA-M bis(2-methylpropyl)alumanylium;chloride Chemical compound CC(C)C[Al](Cl)CC(C)C HQMRIBYCTLBDAK-UHFFFAOYSA-M 0.000 description 1
- BPVYMDMPLCOQPJ-UHFFFAOYSA-L bis(trifluoromethylsulfonyloxy)mercury Chemical compound [Hg+2].[O-]S(=O)(=O)C(F)(F)F.[O-]S(=O)(=O)C(F)(F)F BPVYMDMPLCOQPJ-UHFFFAOYSA-L 0.000 description 1
- RLECCBFNWDXKPK-UHFFFAOYSA-N bis(trimethylsilyl)sulfide Chemical compound C[Si](C)(C)S[Si](C)(C)C RLECCBFNWDXKPK-UHFFFAOYSA-N 0.000 description 1
- HOQPTLCRWVZIQZ-UHFFFAOYSA-H bis[[2-(5-hydroxy-4,7-dioxo-1,3,2$l^{2}-dioxaplumbepan-5-yl)acetyl]oxy]lead Chemical compound [Pb+2].[Pb+2].[Pb+2].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O HOQPTLCRWVZIQZ-UHFFFAOYSA-H 0.000 description 1
- WMFCXPWEKRAKMH-UHFFFAOYSA-N bromo(trimethyl)germane Chemical compound C[Ge](C)(C)Br WMFCXPWEKRAKMH-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- LHQLJMJLROMYRN-UHFFFAOYSA-L cadmium acetate Chemical compound [Cd+2].CC([O-])=O.CC([O-])=O LHQLJMJLROMYRN-UHFFFAOYSA-L 0.000 description 1
- 229910000011 cadmium carbonate Inorganic materials 0.000 description 1
- LVEULQCPJDDSLD-UHFFFAOYSA-L cadmium fluoride Chemical compound F[Cd]F LVEULQCPJDDSLD-UHFFFAOYSA-L 0.000 description 1
- 229940075417 cadmium iodide Drugs 0.000 description 1
- XIEPJMXMMWZAAV-UHFFFAOYSA-N cadmium nitrate Inorganic materials [Cd+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XIEPJMXMMWZAAV-UHFFFAOYSA-N 0.000 description 1
- QOYRNHQSZSCVOW-UHFFFAOYSA-N cadmium nitrate tetrahydrate Chemical compound O.O.O.O.[Cd+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O QOYRNHQSZSCVOW-UHFFFAOYSA-N 0.000 description 1
- GWOWVOYJLHSRJJ-UHFFFAOYSA-L cadmium stearate Chemical compound [Cd+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O GWOWVOYJLHSRJJ-UHFFFAOYSA-L 0.000 description 1
- QCUOBSQYDGUHHT-UHFFFAOYSA-L cadmium sulfate Chemical compound [Cd+2].[O-]S([O-])(=O)=O QCUOBSQYDGUHHT-UHFFFAOYSA-L 0.000 description 1
- 229910000331 cadmium sulfate Inorganic materials 0.000 description 1
- VQNPSCRXHSIJTH-UHFFFAOYSA-N cadmium(2+);carbanide Chemical group [CH3-].[CH3-].[Cd+2] VQNPSCRXHSIJTH-UHFFFAOYSA-N 0.000 description 1
- GKDXQAKPHKQZSC-UHFFFAOYSA-L cadmium(2+);carbonate Chemical compound [Cd+2].[O-]C([O-])=O GKDXQAKPHKQZSC-UHFFFAOYSA-L 0.000 description 1
- AUIZLSZEDUYGDE-UHFFFAOYSA-L cadmium(2+);diacetate;dihydrate Chemical compound O.O.[Cd+2].CC([O-])=O.CC([O-])=O AUIZLSZEDUYGDE-UHFFFAOYSA-L 0.000 description 1
- PSIBWKDABMPMJN-UHFFFAOYSA-L cadmium(2+);diperchlorate Chemical compound [Cd+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O PSIBWKDABMPMJN-UHFFFAOYSA-L 0.000 description 1
- PQJZOTJHMRJOEM-UHFFFAOYSA-L cadmium(2+);diperchlorate;hexahydrate Chemical compound O.O.O.O.O.O.[Cd+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O PQJZOTJHMRJOEM-UHFFFAOYSA-L 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- AWGTVRDHKJQFAX-UHFFFAOYSA-M chloro(phenyl)mercury Chemical compound Cl[Hg]C1=CC=CC=C1 AWGTVRDHKJQFAX-UHFFFAOYSA-M 0.000 description 1
- CZKMPDNXOGQMFW-UHFFFAOYSA-N chloro(triethyl)germane Chemical compound CC[Ge](Cl)(CC)CC CZKMPDNXOGQMFW-UHFFFAOYSA-N 0.000 description 1
- ZZBNZZCHSNOXOH-UHFFFAOYSA-N chloro(trimethyl)germane Chemical compound C[Ge](C)(C)Cl ZZBNZZCHSNOXOH-UHFFFAOYSA-N 0.000 description 1
- RCTYPNKXASFOBE-UHFFFAOYSA-M chloromercury Chemical compound [Hg]Cl RCTYPNKXASFOBE-UHFFFAOYSA-M 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- VBXWCGWXDOBUQZ-UHFFFAOYSA-K diacetyloxyindiganyl acetate Chemical compound [In+3].CC([O-])=O.CC([O-])=O.CC([O-])=O VBXWCGWXDOBUQZ-UHFFFAOYSA-K 0.000 description 1
- QSDQMOYYLXMEPS-UHFFFAOYSA-N dialuminium Chemical compound [Al]#[Al] QSDQMOYYLXMEPS-UHFFFAOYSA-N 0.000 description 1
- ISXUHJXWYNONDI-UHFFFAOYSA-L dichloro(diphenyl)stannane Chemical compound C=1C=CC=CC=1[Sn](Cl)(Cl)C1=CC=CC=C1 ISXUHJXWYNONDI-UHFFFAOYSA-L 0.000 description 1
- OISMQLUZKQIKII-UHFFFAOYSA-L dichlorocadmium;hydrate Chemical compound O.[Cl-].[Cl-].[Cd+2] OISMQLUZKQIKII-UHFFFAOYSA-L 0.000 description 1
- YNLAOSYQHBDIKW-UHFFFAOYSA-M diethylaluminium chloride Chemical compound CC[Al](Cl)CC YNLAOSYQHBDIKW-UHFFFAOYSA-M 0.000 description 1
- SPIUPAOJDZNUJH-UHFFFAOYSA-N diethylmercury Chemical compound CC[Hg]CC SPIUPAOJDZNUJH-UHFFFAOYSA-N 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- ATZBPOVXVPIOMR-UHFFFAOYSA-N dimethylmercury Chemical compound C[Hg]C ATZBPOVXVPIOMR-UHFFFAOYSA-N 0.000 description 1
- YZZFBYAKINKKFM-UHFFFAOYSA-N dinitrooxyindiganyl nitrate;hydrate Chemical compound O.[In+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O YZZFBYAKINKKFM-UHFFFAOYSA-N 0.000 description 1
- LAWOZCWGWDVVSG-UHFFFAOYSA-N dioctylamine Chemical compound CCCCCCCCNCCCCCCCC LAWOZCWGWDVVSG-UHFFFAOYSA-N 0.000 description 1
- XOYUVEPYBYHIFZ-UHFFFAOYSA-L diperchloryloxylead Chemical compound [Pb+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O XOYUVEPYBYHIFZ-UHFFFAOYSA-L 0.000 description 1
- HWMTUNCVVYPZHZ-UHFFFAOYSA-N diphenylmercury Chemical compound C=1C=CC=CC=1[Hg]C1=CC=CC=C1 HWMTUNCVVYPZHZ-UHFFFAOYSA-N 0.000 description 1
- TXKMVPPZCYKFAC-UHFFFAOYSA-N disulfur monoxide Inorganic materials O=S=S TXKMVPPZCYKFAC-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- AZQKMWCRBOYGNB-UHFFFAOYSA-N ethoxygermanium Chemical compound CCO[Ge] AZQKMWCRBOYGNB-UHFFFAOYSA-N 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 229910000373 gallium sulfate Inorganic materials 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- DWRNSCDYNYYYHT-UHFFFAOYSA-K gallium(iii) iodide Chemical compound I[Ga](I)I DWRNSCDYNYYYHT-UHFFFAOYSA-K 0.000 description 1
- SBDRYJMIQMDXRH-UHFFFAOYSA-N gallium;sulfuric acid Chemical compound [Ga].OS(O)(=O)=O SBDRYJMIQMDXRH-UHFFFAOYSA-N 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- DLINORNFHVEIFE-UHFFFAOYSA-N hydrogen peroxide;zinc Chemical compound [Zn].OO DLINORNFHVEIFE-UHFFFAOYSA-N 0.000 description 1
- SKWCWFYBFZIXHE-UHFFFAOYSA-K indium acetylacetonate Chemical compound CC(=O)C=C(C)O[In](OC(C)=CC(C)=O)OC(C)=CC(C)=O SKWCWFYBFZIXHE-UHFFFAOYSA-K 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- UKCIUOYPDVLQFW-UHFFFAOYSA-K indium(3+);trichloride;tetrahydrate Chemical compound O.O.O.O.Cl[In](Cl)Cl UKCIUOYPDVLQFW-UHFFFAOYSA-K 0.000 description 1
- XUVCWJBXGHOWID-UHFFFAOYSA-H indium(3+);trisulfate;hydrate Chemical compound O.[In+3].[In+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O XUVCWJBXGHOWID-UHFFFAOYSA-H 0.000 description 1
- 229910000337 indium(III) sulfate Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- XGCKLPDYTQRDTR-UHFFFAOYSA-H indium(iii) sulfate Chemical compound [In+3].[In+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O XGCKLPDYTQRDTR-UHFFFAOYSA-H 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- RLJMLMKIBZAXJO-UHFFFAOYSA-N lead nitrate Chemical compound [O-][N+](=O)O[Pb]O[N+]([O-])=O RLJMLMKIBZAXJO-UHFFFAOYSA-N 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- PIJPYDMVFNTHIP-UHFFFAOYSA-L lead sulfate Chemical compound [PbH4+2].[O-]S([O-])(=O)=O PIJPYDMVFNTHIP-UHFFFAOYSA-L 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical group [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- GIWKOZXJDKMGQC-UHFFFAOYSA-L lead(2+);naphthalene-2-carboxylate Chemical compound [Pb+2].C1=CC=CC2=CC(C(=O)[O-])=CC=C21.C1=CC=CC2=CC(C(=O)[O-])=CC=C21 GIWKOZXJDKMGQC-UHFFFAOYSA-L 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- NGYIMTKLQULBOO-UHFFFAOYSA-L mercury dibromide Chemical compound Br[Hg]Br NGYIMTKLQULBOO-UHFFFAOYSA-L 0.000 description 1
- FQGYCXFLEQVDJQ-UHFFFAOYSA-N mercury dicyanide Chemical compound N#C[Hg]C#N FQGYCXFLEQVDJQ-UHFFFAOYSA-N 0.000 description 1
- 229910001987 mercury nitrate Inorganic materials 0.000 description 1
- SCTINZGZNJKWBN-UHFFFAOYSA-M mercury(1+);fluoride Chemical compound [Hg]F SCTINZGZNJKWBN-UHFFFAOYSA-M 0.000 description 1
- QKEOZZYXWAIQFO-UHFFFAOYSA-M mercury(1+);iodide Chemical compound [Hg]I QKEOZZYXWAIQFO-UHFFFAOYSA-M 0.000 description 1
- KVICROHOONHSRH-UHFFFAOYSA-N mercury(2+);dinitrate;hydrate Chemical compound O.[Hg+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KVICROHOONHSRH-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- MBBQAVVBESBLGH-UHFFFAOYSA-N methyl 4-bromo-3-hydroxybutanoate Chemical compound COC(=O)CC(O)CBr MBBQAVVBESBLGH-UHFFFAOYSA-N 0.000 description 1
- BABMCXWQNSQAOC-UHFFFAOYSA-M methylmercury chloride Chemical compound C[Hg]Cl BABMCXWQNSQAOC-UHFFFAOYSA-M 0.000 description 1
- JVDIOYBHEYUIBM-UHFFFAOYSA-M methylmercury(1+);iodide Chemical compound C[Hg]I JVDIOYBHEYUIBM-UHFFFAOYSA-M 0.000 description 1
- XTAZYLNFDRKIHJ-UHFFFAOYSA-N n,n-dioctyloctan-1-amine Chemical compound CCCCCCCCN(CCCCCCCC)CCCCCCCC XTAZYLNFDRKIHJ-UHFFFAOYSA-N 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- DRXYRSRECMWYAV-UHFFFAOYSA-N nitrooxymercury Chemical compound [Hg+].[O-][N+]([O-])=O DRXYRSRECMWYAV-UHFFFAOYSA-N 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- HSAJRDKFYZAGLU-UHFFFAOYSA-M perchloryloxymercury Chemical compound [Hg+].[O-]Cl(=O)(=O)=O HSAJRDKFYZAGLU-UHFFFAOYSA-M 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- NMHMNPHRMNGLLB-UHFFFAOYSA-N phloretic acid Chemical compound OC(=O)CCC1=CC=C(O)C=C1 NMHMNPHRMNGLLB-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052696 pnictogen Inorganic materials 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052979 sodium sulfide Inorganic materials 0.000 description 1
- GRVFOGOEDUUMBP-UHFFFAOYSA-N sodium sulfide (anhydrous) Chemical compound [Na+].[Na+].[S-2] GRVFOGOEDUUMBP-UHFFFAOYSA-N 0.000 description 1
- WSFQLUVWDKCYSW-UHFFFAOYSA-M sodium;2-hydroxy-3-morpholin-4-ylpropane-1-sulfonate Chemical compound [Na+].[O-]S(=O)(=O)CC(O)CN1CCOCC1 WSFQLUVWDKCYSW-UHFFFAOYSA-M 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- UURRKPRQEQXTBB-UHFFFAOYSA-N tellanylidenestannane Chemical compound [Te]=[SnH2] UURRKPRQEQXTBB-UHFFFAOYSA-N 0.000 description 1
- PUGUQINMNYINPK-UHFFFAOYSA-N tert-butyl 4-(2-chloroacetyl)piperazine-1-carboxylate Chemical compound CC(C)(C)OC(=O)N1CCN(C(=O)CCl)CC1 PUGUQINMNYINPK-UHFFFAOYSA-N 0.000 description 1
- VJHDVMPJLLGYBL-UHFFFAOYSA-N tetrabromogermane Chemical compound Br[Ge](Br)(Br)Br VJHDVMPJLLGYBL-UHFFFAOYSA-N 0.000 description 1
- IEXRMSFAVATTJX-UHFFFAOYSA-N tetrachlorogermane Chemical compound Cl[Ge](Cl)(Cl)Cl IEXRMSFAVATTJX-UHFFFAOYSA-N 0.000 description 1
- YJBKVPRVZAQTPY-UHFFFAOYSA-J tetrachlorostannane;dihydrate Chemical compound O.O.Cl[Sn](Cl)(Cl)Cl YJBKVPRVZAQTPY-UHFFFAOYSA-J 0.000 description 1
- CUDGTZJYMWAJFV-UHFFFAOYSA-N tetraiodogermane Chemical compound I[Ge](I)(I)I CUDGTZJYMWAJFV-UHFFFAOYSA-N 0.000 description 1
- ZRLCXMPFXYVHGS-UHFFFAOYSA-N tetramethylgermane Chemical compound C[Ge](C)(C)C ZRLCXMPFXYVHGS-UHFFFAOYSA-N 0.000 description 1
- FAKFSJNVVCGEEI-UHFFFAOYSA-J tin(4+);disulfate Chemical compound [Sn+4].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O FAKFSJNVVCGEEI-UHFFFAOYSA-J 0.000 description 1
- KHMOASUYFVRATF-UHFFFAOYSA-J tin(4+);tetrachloride;pentahydrate Chemical compound O.O.O.O.O.Cl[Sn](Cl)(Cl)Cl KHMOASUYFVRATF-UHFFFAOYSA-J 0.000 description 1
- LTSUHJWLSNQKIP-UHFFFAOYSA-J tin(iv) bromide Chemical compound Br[Sn](Br)(Br)Br LTSUHJWLSNQKIP-UHFFFAOYSA-J 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- YUOWTJMRMWQJDA-UHFFFAOYSA-J tin(iv) fluoride Chemical compound [F-].[F-].[F-].[F-].[Sn+4] YUOWTJMRMWQJDA-UHFFFAOYSA-J 0.000 description 1
- QPBYLOWPSRZOFX-UHFFFAOYSA-J tin(iv) iodide Chemical compound I[Sn](I)(I)I QPBYLOWPSRZOFX-UHFFFAOYSA-J 0.000 description 1
- YJGJRYWNNHUESM-UHFFFAOYSA-J triacetyloxystannyl acetate Chemical compound [Sn+4].CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O YJGJRYWNNHUESM-UHFFFAOYSA-J 0.000 description 1
- IYMHCKVVJXJPDB-UHFFFAOYSA-N tributyl(selanylidene)-$l^{5}-phosphane Chemical compound CCCCP(=[Se])(CCCC)CCCC IYMHCKVVJXJPDB-UHFFFAOYSA-N 0.000 description 1
- FQVPFGDPYSIWTM-UHFFFAOYSA-N tributyl(sulfanylidene)-$l^{5}-phosphane Chemical compound CCCCP(=S)(CCCC)CCCC FQVPFGDPYSIWTM-UHFFFAOYSA-N 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- FRJQEDQNNQVYRT-UHFFFAOYSA-K trifluoroindigane;trihydrate Chemical compound O.O.O.[F-].[F-].[F-].[In+3] FRJQEDQNNQVYRT-UHFFFAOYSA-K 0.000 description 1
- VTDQBKLDBJKTMS-UHFFFAOYSA-N trihydrate;hydrofluoride Chemical compound O.O.O.F VTDQBKLDBJKTMS-UHFFFAOYSA-N 0.000 description 1
- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 description 1
- FKIZDWBGWFWWOV-UHFFFAOYSA-N trimethyl(trimethylsilylselanyl)silane Chemical compound C[Si](C)(C)[Se][Si](C)(C)C FKIZDWBGWFWWOV-UHFFFAOYSA-N 0.000 description 1
- VMDCDZDSJKQVBK-UHFFFAOYSA-N trimethyl(trimethylsilyltellanyl)silane Chemical compound C[Si](C)(C)[Te][Si](C)(C)C VMDCDZDSJKQVBK-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- NNPPMTNAJDCUHE-UHFFFAOYSA-N trimethylmethane Natural products CC(C)C NNPPMTNAJDCUHE-UHFFFAOYSA-N 0.000 description 1
- PIOZWDBMINZWGJ-UHFFFAOYSA-N trioctyl(sulfanylidene)-$l^{5}-phosphane Chemical compound CCCCCCCCP(=S)(CCCCCCCC)CCCCCCCC PIOZWDBMINZWGJ-UHFFFAOYSA-N 0.000 description 1
- VYNGFCUGSYEOOZ-UHFFFAOYSA-N triphenylphosphine sulfide Chemical compound C=1C=CC=CC=1P(C=1C=CC=CC=1)(=S)C1=CC=CC=C1 VYNGFCUGSYEOOZ-UHFFFAOYSA-N 0.000 description 1
- YZYKBQUWMPUVEN-UHFFFAOYSA-N zafuleptine Chemical compound OC(=O)CCCCCC(C(C)C)NCC1=CC=C(F)C=C1 YZYKBQUWMPUVEN-UHFFFAOYSA-N 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
- 229940102001 zinc bromide Drugs 0.000 description 1
- 239000011667 zinc carbonate Substances 0.000 description 1
- 235000004416 zinc carbonate Nutrition 0.000 description 1
- 229910000010 zinc carbonate Inorganic materials 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- GTLDTDOJJJZVBW-UHFFFAOYSA-N zinc cyanide Chemical compound [Zn+2].N#[C-].N#[C-] GTLDTDOJJJZVBW-UHFFFAOYSA-N 0.000 description 1
- 229940105296 zinc peroxide Drugs 0.000 description 1
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 1
- 229910000368 zinc sulfate Inorganic materials 0.000 description 1
- 229960001763 zinc sulfate Drugs 0.000 description 1
- JRPGMCRJPQJYPE-UHFFFAOYSA-N zinc;carbanide Chemical group [CH3-].[CH3-].[Zn+2] JRPGMCRJPQJYPE-UHFFFAOYSA-N 0.000 description 1
- OEUUYPRXVRBIFO-UHFFFAOYSA-L zinc;difluoride;tetrahydrate Chemical compound O.O.O.O.[F-].[F-].[Zn+2] OEUUYPRXVRBIFO-UHFFFAOYSA-L 0.000 description 1
- RXBXBWBHKPGHIB-UHFFFAOYSA-L zinc;diperchlorate Chemical compound [Zn+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O RXBXBWBHKPGHIB-UHFFFAOYSA-L 0.000 description 1
- PADPILQDYPIHQQ-UHFFFAOYSA-L zinc;diperchlorate;hexahydrate Chemical compound O.O.O.O.O.O.[Zn+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O PADPILQDYPIHQQ-UHFFFAOYSA-L 0.000 description 1
- IPSRAFUHLHIWAR-UHFFFAOYSA-N zinc;ethane Chemical group [Zn+2].[CH2-]C.[CH2-]C IPSRAFUHLHIWAR-UHFFFAOYSA-N 0.000 description 1
- NHXVNEDMKGDNPR-UHFFFAOYSA-N zinc;pentane-2,4-dione Chemical compound [Zn+2].CC(=O)[CH-]C(C)=O.CC(=O)[CH-]C(C)=O NHXVNEDMKGDNPR-UHFFFAOYSA-N 0.000 description 1
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- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
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Abstract
一种由卤素盐稳定化的量子点包括第13族和第15族的化合物、第12族和第16族的化合物或者第14族和第16族的化合物。所述量子点具有晶体结构,并且所述量子点的表面的至少一部分与卤素盐结合。因此,所述量子点在空气中具有高稳定性。
Description
相关申请的交叉引用
本申请根据35U.S.C.§119要求享有2014年4月11日提交的第10-2014-0043638号韩国专利申请的优先权以及由此的所有权益,该申请的内容以全文引用的方式并入本文。
背景技术
1.领域
示例性实施方案涉及量子点。更具体地,示例性实施方案涉及由卤素盐稳定化的量子点以及制造所述量子点的方法。
2.相关技术
量子点是具有半传导性质且尺寸小于数十纳米的纳米颗粒。由于量子限制效应的原因,量子点具有不同于大块颗粒的性质。例如,量子点可根据其尺寸改变量子点所吸收的光的波长。此外,量子点具有大块颗粒所不具有的新颖的光学、电学及物理学性质。因此,正在进行有关制造光电转换装置的研究,如制造太阳能电池、发光二极管等。
近来,已经开发了胶体化学合成法以控制量子点的尺寸和形状。然而,通过胶体化学合成法制造的量子点在空气中稳定性低。具有厚表层的芯-壳量子点在空气中可能是相对稳定的。然而,芯-壳量子点难以适用于光电转换装置,并且芯-壳量子点的制造过程复杂。
发明内容
示例性实施方案提供在空气中稳定的量子点。
示例性实施方案还提供制造所述量子点的方法。
根据一个示例性实施方案,一种由卤素盐稳定化的量子点包括第13族和第15族的化合物、第12族和第16族的化合物或第14族和第16族的化合物。量子点具有晶体结构,并且量子点的表面的至少一部分与卤素盐结合。
在一个示例性实施方案中,量子点的直径为1nm至20nm。
在一个示例性实施方案中,量子点具有与卤素盐结合的第一表面和与有机配体结合的第二表面。
在一个示例性实施方案中,(100)表面与卤素盐结合,并且(111)表面与有机配体结合。
在一个示例性实施方案中,第14族和第16族的化合物包括至少一种选自由以下化合物组成的组:氧化锡(SnO)、硫化锡(SnS)、硒化锡(SnSe)、碲化锡(SnTe)、硫化铅(PbS)、硒化铅(PbSe)、碲化铅(PbTe)、氧化锗(GeO)、硫化锗(GeS)、硒化锗(GeSe)、碲化锗(GeTe)、硒硫化锡(SnSeS)、硒碲化锡(SnSeTe)、硫碲化锡(SnSTe)、硒硫化铅(PbSeS)、硒碲化铅(PbSeTe)、硫碲化铅(PbSTe)、硫化锡铅(SnPbS)、硒化锡铅(SnPbSe)、碲化锡铅(SnPbTe)、氧硫化锡(SnOS)、氧硒化锡(SnOSe)、氧碲化锡(SnOTe)、氧硫化锗(GeOS)、氧硒化锗(GeOSe)、氧碲化锗(GeOTe)、硫硒化锡铅(SnPbSSe)、硒碲化锡铅(SnPbSeTe)和硫碲化锡铅(SnPbSTe)。
在一个示例性实施方案中,所述第13族和第15族的化合物包括至少一种选自由以下化合物组成的组:磷化镓(GaP)、砷化镓(GaAs)、锑化镓(GaSb)、氮化镓(GaN)、磷化铝(AlP)、砷化铝(AlAs)、锑化铝(AlSb)、氮化铝(AlN)、磷化铟(InP)、砷化铟(InAs)、锑化铟(InSb)、氮化铟(InN)、磷砷化镓(GaPAs)、磷锑化镓(GaPSb)、磷氮化镓(GaPN)、砷氮化镓(GaAsN)、锑氮化镓(GaSbN)、磷砷化铝(AlPAs)、磷锑化铝(AlPSb)、磷氮化铝(AlPN)、砷氮化铝(AlAsN)、锑氮化铝(AlSbN)、磷砷化铟(InPAs)、磷锑化铟(InPSb)、磷氮化铟(InPN)、砷氮化铟(InAsN)、锑氮化铟(InSbN)、磷化铝镓(AlGaP)、砷化铝镓(AlGaAs)、锑化铝镓(AlGaSb)、氮化铝镓(AlGaN)、砷氮化铝(AlAsN)、锑氮化铝(AlSbN)、磷化铟镓(InGaP)、砷化铟镓(InGaAs)、锑化铟镓(InGaSb)、氮化铟镓(InGaN)、砷氮化铟(InAsN)、锑氮化铟(InSbN)、磷化铝铟(AlInP)、砷化铝铟(AlInAs)、锑化铝铟(AlInSb)、氮化铝铟(AlInN)、砷氮化铝(AlAsN)、锑氮化铝(AlSbN)、磷氮化铝(AlPN)、磷砷化镓铝(GaAlPAs)、磷锑化镓铝(GaAlPSb)、磷砷化镓铟(GaInPAs)、砷化镓铟铝(GaInAlAs)、磷氮化镓铝(GaAlPN)、砷氮化镓铝(GaAlAsN)、锑氮化镓铝(GaAlSbN)、磷氮化镓铟(GaInPN)、砷氮化镓铟(GaInAsN)、氮化镓铟铝(GaInAlN)、锑磷氮化镓(GaSbPN)、砷磷氮化镓(GaAsPN)、砷锑氮化镓(GaAsSbN)、磷锑化镓铟(GaInPSb)、磷氮化镓铟(GaInPN)、锑氮化镓铟(GaInSbN)、磷锑氮化镓(GaPSbN)、磷砷化铟铝(InAlPAs)、磷氮化铟铝(InAlPN)、磷砷氮化铟(InPAsN)、锑氮化铟铝(InAlSbN)、磷锑氮化铟(InPSbN)、砷锑氮化铟(InAsSbN)和磷锑化铟铝(InAlPSb)。
在一个示例性实施方案中,第12族和第16族的化合物包括至少一种选自由以下化合物组成的组:硫化镉(CdS)、硒化镉(CdSe)、碲化镉(CdTe)、硫化锌(ZnS)、硒化锌(ZnSe)、碲化锌(ZnTe)、硫化汞(HgS)、硒化汞(HgSe)、碲化汞(HgTe)、氧化锌(ZnO)、氧化镉(CdO)、氧化汞(HgO)、硒硫化镉(CdSeS)、硒碲化镉(CdSeTe)、硫碲化镉(CdSTe)、硫化镉锌(CdZnS)、硒化镉锌(CdZnSe)、硫硒化镉(CdSSe)、碲化镉锌(CdZnTe)、硫化镉汞(CdHgS)、硒化镉汞(CdHgSe)、碲化镉汞(CdHgTe)、硒硫化锌(ZnSeS)、硒碲化锌(ZnSeTe)、硫碲化锌(ZnSTe)、硒硫化汞(HgSeS)、硒碲化汞(HgSeTe)、硫碲化汞(HgSTe)、硫化汞锌(HgZnS)、硒化汞锌(HgZnSe)、氧化镉锌(CdZnO)、氧化镉汞(CdHgO)、氧化锌汞(ZnHgO)、硒氧化锌(ZnSeO)、碲氧化锌(ZnTeO)、硫氧化锌(ZnSO)、硒氧化镉(CdSeO)、碲氧化镉(CdTeO)、硫氧化镉(CdSO)、硒氧化汞(HgSeO)、碲氧化汞(HgTeO)、硫氧化汞(HgSO)、硒硫化镉锌(CdZnSeS)、硒碲化镉锌(CdZnSeTe)、硫碲化镉锌(CdZnSTe)、硒硫化镉汞(CdHgSeS)、硒碲化镉汞(CdHgSeTe)、硫碲化镉汞(CdHgSTe)、硒硫化汞锌(HgZnSeS)、硒碲化汞锌(HgZnSeTe)、硫碲化汞锌(HgZnSTe)、硒氧化镉锌(CdZnSeO)、碲氧化镉锌(CdZnTeO)、硫氧化镉锌(CdZnSO)、硒氧化镉汞(CdHgSeO)、碲氧化镉汞(CdHgTeO)、硫氧化镉汞(CdHgSO)、硒氧化锌汞(ZnHgSeO)、碲氧化锌汞(ZnHgTeO)和硫氧化锌汞(ZnHgSO)。
根据一个示例性实施方案,制造量子点的方法包括形成包括第13族和第15族的化合物、第12族和第16族的化合物或第14族和第16族的化合物的量子点颗粒,并对所述量子点颗粒提供卤素化合物以稳定化所述量子点颗粒。
在一个示例性实施方案中,形成量子点颗粒包括使第一前体与有机酸进行反应,并使第二前体与第一前体和有机酸的反应产物进行反应。
在一个示例性实施方案中,第一前体包括第12族、第13族或第14族的元素。
在一个示例性实施方案中,所有机酸包括至少一种选自由以下化合物组成的组:甲酸、乙酸、丙酸、戊酸、丁酸、己酸、辛酸、癸酸和月桂酸。
在一个示例性实施方案中,所第二前体包括第15族或第16族的元素。
在一个示例性实施方案中,卤素化合物包括至少一种选自由以下化合物组成的组:氯化物、溴化物和碘化物。
在一个示例性实施方案中,所卤素化合物包括至少一种选自由以下化合物组成的组:四丁基溴化铵、十六烷基三甲基溴化铵、氯化铵、溴化铵、碘化铵、氯化钾、溴化钾、碘化钾、氯化钠、溴化钠、碘化钠、氯化铟、溴化铟和碘化铟。
根据所述示例性实施方案可以得到在空气中稳定性提高的量子点。
附图说明
通过参考附图描述其示例性实施方案,上述及其它特征和优点将更加显而易见,其中:
图1是示意图,示出根据本发明示例性实施方案的量子点的结构。
图2是流程图,示出根据本发明示例性实施方案制造量子点的方法。
图3A是实施例1的TEM照片。
图3B是比较例1的TEM照片。
图4A是显示实施例1的量子点中的铅的XPS分析的曲线图。
图4B是显示比较例1的量子点中的铅的XPS分析的曲线图。
图5A是显示实施例1的量子点中的硒的XPS分析的曲线图。
图5B是显示比较例1的量子点中的硒的XPS分析的曲线图。
图6A是显示实施例1至4和比较例1的量子点相对于时间的吸收波长变化的曲线图。
图6B是显示实施例5至7和比较例1的量子点相对于时间的吸收波长变化的曲线图。
图6C是显示实施例2、8和10及比较例1的量子点相对于时间的吸收波长变化的曲线图。
具体实施方式
下文参考附图更充分地描述示例实施方案。然而发明构思可以体现为许多不同的形式,并且不应被解释为限于本文给出的示例实施方案。在附图中,为清楚起见,层和区域的尺寸及相对尺寸可以被放大。要理解的是,虽然术语第一、第二、第三等可以在本文中用于描述各种元素、组分、区域、层、图案和/或区间,但这些元素、组分、区域、层、图案和/或区间不应受这些术语的限制。这些术语仅用于将一种(个)元素、组分、区域、层、图案或区间与另一区域、层、图案或区间相区别。因此,在不偏离示例实施方案教导的情况下,下文讨论的第一元素、组分、区域、层或区间可以被称为第二元素、组分、区域、层或区间。
本文参考截面图示描述示例实施方案,所述截面图示为作为例示的发明构思的理想化示例实施方案(及中间结构)的示意图。如此,可预期会因为例如制造技术和/或公差而造成与图示的形状有所变化。因此,示例实施方案不应被解释为限于本文中所示的区域的特定形状,而是要包括因例如制造而造成的形状上的偏差。图中所示的区域本质上是示意性的,它们的形状并不旨在用来例示装置的区域的实际形状,并且并不旨在限制发明构思的范围。
本文所用的术语仅是为了描述特定示例实施方案的目的,并不旨在限制本发明。如本文所用,单数形式“一个(种)”和“所述”旨在同样包括复数形式,除非上下文明确地另有所指。进一步要理解的是,当用在本说明书中时,术语“包括(comprises/compris ing)”列举指定特征、整体、步骤、操作、元素和/或组分的存在,但不排除存在或增加一种或多种其它特征、整体、步骤、操作、元素、组分和/或其群组。
除另有定义外,本文所用的所有术语(包括技术和科学术语)具有与本发明构思所属领域的普通技术人员通常所理解的相同的含义。进一步要理解的是,术语(如在常用词典中所定义的术语)应被解释为具有与它们在相关领域背景下的含义相一致的含义,并且不应按理想化的或过于正式的意义进行解释,除非本文明确地如此定义。
由卤素盐稳定化的量子点
根据本发明示例性实施方案的量子点具有晶体结构并且包括至少两种元素。量子点的表面的至少一部分被卤素盐覆盖。量子点可包括金属同半金属的键或金属同非金属的键。卤素盐可包括属于量子点的金属原子同卤素原子的离子键。
图1是示出根据本发明示例性实施方案的量子点的结构的示意图。参考图1,量子点可包括硒化铅(PbSe)。例如,PbSe量子点可具有岩盐立方晶体结构。量子点具有(100)表面和(111)表面。铅原子被布置在(111)表面,并且与配体结合以被稳定化。因为铅原子和硒原子被布置在(100)表面,所以(100)表面在空气中具有相对低的稳定性。因此,如果(100)表面不受保护,则(100)表面的硒原子可能会被氧化或分离,从而使量子点劣化或受损。然而,根据本发明示例性实施方案的量子点包括与(100)表面结合的卤素盐。因此,量子点在空气中稳定性提高。
卤素盐可以是包括与铅原子结合的卤素原子的卤化铅(PbX)。卤素盐可以在(100)表面上形成单层状结构或多层状结构。量子点可具有约1nm至约100nm、优选约1nm至约20nm的直径。
卤素的例子可包括氟、氯、溴、碘等。例如,卤素盐可包括氯化铅、溴化铅、碘化铅、氟化铅或其组合。因为氟化铅(PbF2)具有相对大的键能,所以包括氟化铅的量子点的适用性可能会降低。因此,氯化铅、溴化铅、碘化铅可能是比氟化铅优选的。
配体同铅原子的结合可以在(111)表面上形成Pb-O键。配体可以是有机配体或无机配体。优选地,配体可以是由诸如油酸的有机酸提供的有机配体。有机配体包括的碳原子数可等于或少于20。
在所述实施方案中,量子点包括PbSE,并且(111)表面与有机配体结合,而(100)表面与卤素盐结合。然而,本发明的示例性实施方案不限于此,并且可根据元素及晶体结构而有所变化。本发明的示例性实施方案可包括各种量子点,该量子点包括与有机配体结合的第一表面,和不与有机配体结合而与卤素盐结合的第二表面。
量子点可包括除了PbSe之外的材料的各种组合。例如,量子点可包括(周期表中)第14族和第16族的化合物。例如,量子点可包括氧化锡(SnO)、硫化锡(SnS)、硒化锡(SnSe)、碲化锡(SnTe)、硫化铅(PbS)、硒化铅(PbSe)、碲化铅(PbTe)、氧化锗(GeO)、硫化锗(GeS)、硒化锗(GeSe)、碲化锗(GeTe)、硒硫化锡(SnSeS)、硒碲化锡(SnSeTe)、硫碲化锡(SnSTe)、硒硫化铅(PbSeS)、硒碲化铅(PbSeTe)、硫碲化铅(PbSTe)、硫化锡铅(SnPbS)、硒化锡铅(SnPbSe)、碲化锡铅(SnPbTe)、氧硫化锡(SnOS)、氧硒化锡(SnOSe)、氧碲化锡(SnOTe)、氧硫化锗(GeOS)、氧硒化锗(GeOSe)、氧碲化锗(GeOTe)、硫硒化锡铅(SnPbSSe)、硒碲化锡铅(SnPbSeTe)、硫碲化锡铅(SnPbSTe)等。这些可各自单独使用或将它们组合使用。
在另一实施方案中,量子点可包括第12族和第16族的化合物。例如,量子点可包括硫化镉(CdS)、硒化镉(CdSe)、碲化镉(CdTe)、硫化锌(ZnS)、硒化锌(ZnSe)、碲化锌(ZnTe)、硫化汞(HgS)、硒化汞(HgSe)、碲化汞(HgTe)、氧化锌(ZnO)、氧化镉(CdO)、氧化汞(HgO)、硒硫化镉(CdSeS)、硒碲化镉(CdSeTe)、硫碲化镉(CdSTe)、硫化镉锌(CdZnS)、硒化镉锌(CdZnSe)、硫硒化镉(CdSSe)、碲化镉锌(CdZnTe)、硫化镉汞(CdHgS)、硒化镉汞(CdHgSe)、碲化镉汞(CdHgTe)、硒硫化锌(ZnSeS)、硒碲化锌(ZnSeTe)、硫碲化锌(ZnSTe)、硒硫化汞(HgSeS)、硒碲化汞(HgSeTe)、硫碲化汞(HgSTe)、硫化汞锌(HgZnS)、硒化汞锌(HgZnSe)、氧化镉锌(CdZnO)、氧化镉汞(CdHgO)、氧化锌汞(ZnHgO)、硒氧化锌(ZnSeO)、碲氧化锌(ZnTeO)、硫氧化锌(ZnSO)、硒氧化镉(CdSeO)、碲氧化镉(CdTeO)、硫氧化镉(CdSO)、硒氧化汞(HgSeO)、碲氧化汞(HgTeO)、硫氧化汞(HgSO)、硒硫化镉锌(CdZnSeS)、硒碲化镉锌(CdZnSeTe)、硫碲化镉锌(CdZnSTe)、硒硫化镉汞(CdHgSeS)、硒碲化镉汞(CdHgSeTe)、硫碲化镉汞(CdHgSTe)、硒硫化汞锌(HgZnSeS)、硒碲化汞锌(HgZnSeTe)、硫碲化汞锌(HgZnSTe)、硒氧化镉锌(CdZnSeO)、碲氧化镉锌(CdZnTeO)、硫氧化镉锌(CdZnSO)、硒氧化镉汞(CdHgSeO)、碲氧化镉汞(CdHgTeO)、硫氧化镉汞(CdHgSO)、硒氧化锌汞(ZnHgSeO)、碲氧化锌汞(ZnHgTeO)、硫氧化锌汞(ZnHgSO)等。这些可各自单独使用或将它们组合使用。
在另一实施方案中,量子点可包括第13族和第15族的化合物。例如,量子点可包括磷化镓(GaP)、砷化镓(GaAs)、锑化镓(GaSb)、氮化镓(GaN)、磷化铝(AlP)、砷化铝(AlAs)、锑化铝(AlSb)、氮化铝(AlN)、磷化铟(InP)、砷化铟(InAs)、锑化铟(InSb)、氮化铟(InN)、磷砷化镓(GaPAs)、磷锑化镓(GaPSb)、磷氮化镓(GaPN)、砷氮化镓(GaAsN)、锑氮化镓(GaSbN)、磷砷化铝(AlPAs)、磷锑化铝(AlPSb)、磷氮化铝(AlPN)、砷氮化铝(AlAsN)、锑氮化铝(AlSbN)、磷砷化铟(InPAs)、磷锑化铟(InPSb)、磷氮化铟(InPN)、砷氮化铟(InAsN)、锑氮化铟(InSbN)、磷化铝镓(AlGaP)、砷化铝镓(AlGaAs)、锑化铝镓(AlGaSb)、氮化铝镓(AlGaN)、砷氮化铝(AlAsN)、锑氮化铝(AlSbN)、磷化铟镓(InGaP)、砷化铟镓(InGaAs)、锑化铟镓(InGaSb)、氮化铟镓(InGaN)、砷氮化铟(InAsN)、锑氮化铟(InSbN)、磷化铝铟(AlInP)、砷化铝铟(AlInAs)、锑化铝铟(AlInSb)、氮化铝铟(AlInN)、砷氮化铝(AlAsN)、锑氮化铝(AlSbN)、磷氮化铝(AlPN)、磷砷化镓铝(GaAlPAs)、磷锑化镓铝(GaAlPSb)、磷砷化镓铟(GaInPAs)、砷化镓铟铝(GaInAlAs)、磷氮化镓铝(GaAlPN)、砷氮化镓铝(GaAlAsN)、锑氮化镓铝(GaAlSbN)、磷氮化镓铟(GaInPN)、砷氮化镓铟(GaInAsN)、氮化镓铟铝(GaInAlN)、锑磷氮化镓(GaSbPN)、砷磷氮化镓(GaAsPN)、砷锑氮化镓(GaAsSbN)、磷锑化镓铟(GaInPSb)、磷氮化镓铟(GaInPN)、锑氮化镓铟(GaInSbN)、磷锑氮化镓(GaPSbN)、磷砷化铟铝(InAlPAs)、磷氮化铟铝(InAlPN)、磷砷氮化铟(InPAsN)、锑氮化铟铝(InAlSbN)、磷锑氮化铟(InPSbN)、砷锑氮化铟(InAsSbN)、磷锑化铟铝(InAlPSb)等。这些可各自单独使用或将它们组合使用。
所述量子点在空气中可以是稳定的,即使没有厚的表层。因此,适用性和电性能可以得到提高。
制造量子点的方法
图2是示出根据本发明示例性实施方案制造量子点的方法的流程图。
参考图2,使第一前体与有机酸进行反应(S10)。例如,将第一前体和有机酸分散在溶剂中。第一前体可包括至少一种选自第12、13和14族的元素。
例如,包括第12族元素的第一前体可包括二水合乙酸镉、二甲基镉、二乙基镉、乙酸镉、乙酰丙酮镉、水合乙酰丙酮镉、碘化镉、溴化镉、氯化镉、水合氯化镉、氟化镉、碳酸镉、硝酸镉、四水合硝酸镉、氧化镉、高氯酸镉、六水合高氯酸镉、磷化镉、硫酸镉、环烷酸镉、硬脂酸镉、二甲基锌、二乙基锌、乙酸锌、二水合乙酸锌、乙酰丙酮锌、水合乙酰丙酮锌、碘化锌、溴化锌、氯化锌、氟化锌、四水合氟化锌、碳酸锌、氰化锌、硝酸锌、六水合硝酸锌、氧化锌、过氧化锌、高氯酸锌、六水合高氯酸锌、硫酸锌、二苯基锌、环烷酸锌、硬脂酸锌、乙酸汞、碘化汞、溴化汞、氯化汞、氟化汞、氰化汞、硝酸汞、一水合硝酸汞、氧化汞、高氯酸汞、四水合高氯酸汞、三水合高氯酸汞、硫酸汞、二甲基汞、二乙基汞、二苯基汞、硫酸汞、三氟甲磺酸汞、氯化甲基汞、碘化甲基汞、乙酸苯基汞、氯化苯基汞等。这些可各自单独使用或将它们组合使用。
例如,包括第13族元素的第一前体可包括乙酸铝、碘化铝、溴化铝、氯化铝、六水合氯化铝、氟化铝、硝酸铝、氧化铝、高氯酸铝、碳化铝、硬脂酸铝、硫酸铝、氯化二异丁基铝、氯化二乙基铝、三异丁基铝、三乙基铝、三乙基(三仲丁氧基)二铝、三甲基铝、乙酰丙酮镓、氯化镓、氟化镓、三水合氟化镓、氧化镓、硝酸镓、水合硝酸镓、硫酸镓、碘化镓、三乙基镓、三甲基镓、氯化铟、四水合氯化铟、氧化铟、硝酸铟、水合硝酸铟、硫酸铟、水合硫酸铟、乙酸铟、乙酰丙酮铟、溴化铟、氟化铟、三水合氟化铟、三甲基铟等。这些可各自单独使用或将它们组合使用。
例如,包括第14族元素的第一前体可包括乙酸铅、三水合乙酸铅、溴化铅、氯化铅、氟化铅、氧化铅、高氯酸铅、硝酸铅、硫酸铅、碳酸铅、乙酰丙酮铅、柠檬酸铅、溴化铅、环烷酸铅、乙酸锡、双乙酰丙酮锡、溴化锡、氯化锡、二水合氯化锡、五水合氯化锡、氟化锡、氧化锡、硫酸锡、碘化锡、二氯化二苯基锡、四氯化锗、氧化锗、乙氧基锗、溴化锗、碘化锗、四甲基锗、氯化三甲基锗、溴化三甲基锗、氯化三乙基锗等。这些可各自单独使用或将它们组合使用。
在一个示例性实施方案中,有机酸可包括油酸。
在另一示例性实施方案中,有机酸可包括低分子量有机酸。例如,低分子量有机酸可包括甲酸、乙酸、丙酸、戊酸、丁酸、己酸、辛酸、癸酸、月桂酸等。这些可各自单独使用或将它们组合使用。
在另一示例性实施方案中,有机酸可包括低分子量有机酸和油酸的混合物。低分子量有机酸和油酸的摩尔比可以为约10:1至约1:1,优选为约9:1至约7:3。当有机酸仅包括低分子量有机酸时或者当低分子量有机酸对油酸的比例过大时,量子点的尺寸可能会增大而使光电性能劣化。当低分子量有机酸对油酸的比例过小时,量子点在空气中的稳定性可能会降低。
此外,当有机酸包括低分子量有机酸和油酸的混合物时,通过调节低分子量有机酸和油酸的摩尔比可以很容易地控制量子点的尺寸和形状。
在另一示例性实施方案中,有机酸可包括油酸和卤素化合物的混合物。卤素化合物可与第一前体进行反应以形成卤素配体。例如,卤素化合物可包括氯化铵、溴化铵等。
溶剂可以是有机溶剂。例如,溶剂可包括烃、胺等。
例如,烃可包括己烷、十二烷、癸烷、十一烷、十四烷、十六烷、1-十六炔、1-十八炔、二苯基醚等。这些可各自单独使用或将它们组合使用。
例如,胺可包括油胺、十二烷胺、月桂胺、辛胺、三辛胺、二辛胺、十六胺等。这些可各自单独使用或将它们组合使用。
可以通过加热处理第一前体和有机酸的反应。例如,第一前体和有机酸的反应可以在约80℃至约150℃的温度下进行。优选地,反应可以在真空或包括氮气、氩气等的惰性条件下进行。
可进一步进行脱气以促进第一前体和有机酸的反应。脱气可移除反应的副产物,从而移动第一前体和有机酸的反应平衡。因此,第一前体和有机酸的反应可以得到促进。脱气可进行约1小时至约5小时。
此后,使第二前体与第一前体和有机酸的反应产物进行反应以形成量子点(S20)。第二前体可包括至少一种选自第15和16族的元素。
例如,第二前体可包括硒化三正辛基膦、硒化三正丁基膦、二乙基二硒醚、二甲基硒醚、双(三甲基甲硅烷基)硒醚、硒化三苯基膦(Se-TPP)、碲化三正辛基膦、碲化三正丁基膦、双(三甲基甲硅烷基)碲醚、碲化三苯基膦(Te-TPP)、硫化三辛基膦(S-TOP)、硫化三丁基膦(S-TBP)、硫化三苯基膦(S-TPP)、硫化三辛胺(S-TOA)、双(三甲基甲硅烷基)硫醚、三甲基甲硅烷基硫醚、硫化铵、硫化钠等。这些可各自单独使用或将它们组合使用。
可以通过加热处理第二前体同第一前体和有机酸的反应产物的反应。例如,反应可以在约80℃至约350℃的温度下、优选在约80℃至约150℃的温度下进行。
优选地,可以通过急冷快速地终止第二前体同第一前体和有机酸的反应产物的反应。例如,可以通过己烷、冰水等终止反应。
此后,提供卤素化合物以稳定量子点(S30)。卤素化合物和量子点的反应可以在高于室温的温度下进行,例如,在约40℃至约80℃下进行。因此,可以将通过急冷而冷却的反应溶液再次加热以使之具有适当的温度。
卤素化合物不限于特定的化合物,并且可包括能生成卤素离子的任意化合物。优选地,考虑到键能,卤素化合物可包括氯、溴或碘。例如,卤素化合物可包括卤化金属、有机卤化物等。具体而言,卤素化合物可包括四丁基溴化铵、十六烷基三甲基溴化铵、氯化铵、溴化铵、碘化铵、氯化钾、溴化钾、碘化钾、氯化钠、溴化钠、碘化钠、氯化铟、溴化铟、碘化铟等。这些可各自单独使用或将它们组合使用。
卤素化合物可以与溶剂一起使用。例如,溶剂可包括甲醇、乙腈、乙醇等。
此后,将未反应的单体移除(S40)。对反应溶液提供诸如醇的非溶剂以引起团聚。然后,进行离心沉淀。将沉淀物分散在溶剂中以移除未反应的单体。结果得到稳定化的量子点。量子点可具有约1nm至约100nm、优选约1nm至约20nm的直径。
根据本发明的示例性实施方案,通过使用卤素盐在量子点的表面上形成了钝化层。因此,量子点在空气中的稳定性可以得到提高。
下文将参考量子点的合成例来说明本发明的实施例。
实施例1
对包括约1.4ml油酸和约10ml十八炔的混合物溶液提供约0.46g的PbO。然后在约120℃下加热混合物溶液以制备前体溶液。在前体溶液的温度降到约90℃后,混合物包括约6ml硒化三辛基膦(6M)和十八炔。通过己烷和冰水将溶液的反应急冷以形成量子点。在将溶液的温度升高到约60℃后,对溶液提供分散在甲醇中的约0.19M氯化铵并搅拌。此后,对溶液提供以1:2的比例的己烷和乙醇并使其离心的操作重复三次以得到PbSe量子点沉淀物。通过透射电子显微镜(TEM)测量,量子点的直径为约3nm。
实施例2
除了使用溴化铵代替氯化铵外,通过与实施例1基本上相同的方法得到量子点。
实施例3
除了使用碘化铵代替氯化铵外,通过与实施例1基本上相同的方法得到量子点。
实施例4
除了使用氟化铵代替氯化铵外,通过与实施例1基本上相同的方法得到量子点。
实施例5
除了使用氯化钾代替氯化铵外,通过与实施例1基本上相同的方法得到量子点。
实施例6
除了使用氯化钠代替氯化铵外,通过与实施例1基本上相同的方法得到量子点。
实施例7
除了使用氯化铟代替氯化铵外,通过与实施例1基本上相同的方法得到量子点。
实施例8
除了使用四丁基溴化铵代替氯化铵外,通过与实施例1基本上相同的方法得到量子点。
实施例9
除了使用十六烷基三甲基溴化铵代替氯化铵外,通过与实施例1基本上相同的方法得到量子点。
实施例10
除了使用四丁基溴化铵和乙腈代替氯化铵和甲醇外,通过与实施例1基本上相同的方法得到量子点。
比较例1
除了不提供氯化铵外,通过与实施例1基本上相同的方法得到量子点。
图3A是实施例1的TEM照片。图3B是比较例1的TEM照片。参考图3A和3B,实施例1的稳定化量子点的尺寸类似于比较例1的量子点。因此,可以指出的是,通过实施例1形成的用于稳定化的钝化层非常薄,使得钝化层几乎不会增大量子点的尺寸。
图4A是显示实施例1的量子点中的铅的XPS分析的曲线图。图4B是显示比较例1的量子点中的铅的XPS分析的曲线图。参考图4A和4B,可以指出的是,量子点包括Pb-Cl离子键,这在用于比较例1的图4B中没有显示。因此,可以指出的是,在实施例1的量子点中形成了卤素盐的钝化层。在图4A和4B中,Pb-O峰代表Pb和配体在(111)表面的键。
图5A是显示实施例1的量子点中的硒的XPS分析的曲线图。图5B是显示比较例1的量子点中的硒的XPS分析的曲线图。在合成之后(刚制备的)首先立即进行XPS分析,并且在空气中过去两周(2周)后进行第二次。参考图5A和5B,在空气中过去两周后比较例1的量子点中的硒量减少,而实施例1的量子点中的硒量基本上没有变化。因此,可以指出的是,与比较例1的量子点相比,实施例1的量子点在空气中可能具有较高的稳定性。
图6A是显示实施例1至4和比较例1的量子点相对于时间的吸收波长变化的曲线图。参考图6A,比较例1的量子点的吸收波长根据时间的推移而有所变化,而实施例1至3的量子点的吸收波长基本上没有变化。然而,使用氟化物的实施例4的量子点的吸收波长有显著变化。
图6B是显示实施例5至7和比较例1的量子点相对于时间的吸收波长变化的曲线图。参考图6B,可以指出的是,各种卤素盐可用于稳定量子点。
图6C是显示实施例2、8和10及比较例1的量子点相对于时间的吸收波长变化的曲线图。参考图6C,可以指出的是,各种卤素盐和溶剂可用于稳定量子点。
本发明的示例性实施方案可用于各种电气元件、晶体管、显示装置、光源等。
前述内容是示例性的,并且不应被解释为对其的限制。虽然已经描述了一些示例性实施方案,但在不实质性地偏离本发明的新颖教导、各方面及优点的情况下,本领域技术人员将会很容易意识到,在示例性实施方案中进行许多修改是可能的。因此,所有的这类修改旨在包括于本公开内容的范围之内。
Claims (10)
1.一种由卤素盐稳定化的量子点,量子点包括第13族和第15族的化合物、第12族和第16族的化合物或第14族和第16族的化合物,其中量子点具有晶体结构,并且量子点的表面的至少一部分与卤素盐结合,
其中,(100)表面与卤素盐结合,并且(111)表面与有机配体结合。
2.根据权利要求1所述的量子点,其中量子点的直径为1nm至20nm。
3.根据权利要求1所述的量子点,其中第14族和第16族的化合物包括选自由以下化合物组成的组中的至少一种:氧化锡(SnO)、硫化锡(SnS)、硒化锡(SnSe)、碲化锡(SnTe)、硫化铅(PbS)、硒化铅(PbSe)、碲化铅(PbTe)、氧化锗(GeO)、硫化锗(GeS)、硒化锗(GeSe)、碲化锗(GeTe)、硒硫化锡(SnSeS)、硒碲化锡(SnSeTe)、硫碲化锡(SnSTe)、硒硫化铅(PbSeS)、硒碲化铅(PbSeTe)、硫碲化铅(PbSTe)、硫化锡铅(SnPbS)、硒化锡铅(SnPbSe)、碲化锡铅(SnPbTe)、氧硫化锡(SnOS)、氧硒化锡(SnOSe)、氧碲化锡(SnOTe)、氧硫化锗(GeOS)、氧硒化锗(GeOSe)、氧碲化锗(GeOTe)、硫硒化锡铅(SnPbSSe)、硒碲化锡铅(SnPbSeTe)和硫碲化锡铅(SnPbSTe)。
4.根据权利要求1所述的量子点,其中第13族和第15族的化合物包括选自由以下化合物组成的组中的至少一种:磷化镓(GaP)、砷化镓(GaAs)、锑化镓(GaSb)、氮化镓(GaN)、磷化铝(AlP)、砷化铝(AlAs)、锑化铝(AlSb)、氮化铝(AlN)、磷化铟(InP)、砷化铟(InAs)、锑化铟(InSb)、氮化铟(InN)、磷砷化镓(GaPAs)、磷锑化镓(GaPSb)、磷氮化镓(GaPN)、砷氮化镓(GaAsN)、锑氮化镓(GaSbN)、磷砷化铝(AlPAs)、磷锑化铝(AlPSb)、磷氮化铝(AlPN)、砷氮化铝(AlAsN)、锑氮化铝(AlSbN)、磷砷化铟(InPAs)、磷锑化铟(InPSb)、磷氮化铟(InPN)、砷氮化铟(InAsN)、锑氮化铟(InSbN)、磷化铝镓(AlGaP)、砷化铝镓(AlGaAs)、锑化铝镓(AlGaSb)、氮化铝镓(AlGaN)、砷氮化铝(AlAsN)、锑氮化铝(AlSbN)、磷化铟镓(InGaP)、砷化铟镓(InGaAs)、锑化铟镓(InGaSb)、氮化铟镓(InGaN)、砷氮化铟(InAsN)、锑氮化铟(InSbN)、磷化铝铟(AlInP)、砷化铝铟(AlInAs)、锑化铝铟(AlInSb)、氮化铝铟(AlInN)、砷氮化铝(AlAsN)、锑氮化铝(AlSbN)、磷氮化铝(AlPN)、磷砷化镓铝(GaAlPAs)、磷锑化镓铝(GaAlPSb)、磷砷化镓铟(GaInPAs)、砷化镓铟铝(GaInAlAs)、磷氮化镓铝(GaAlPN)、砷氮化镓铝(GaAlAsN)、锑氮化镓铝(GaAlSbN)、磷氮化镓铟(GaInPN)、砷氮化镓铟(GaInAsN)、氮化镓铟铝(GaInAlN)、锑磷氮化镓(GaSbPN)、砷磷氮化镓(GaAsPN)、砷锑氮化镓(GaAsSbN)、磷锑化镓铟(GaInPSb)、磷氮化镓铟(GaInPN)、锑氮化镓铟(GaInSbN)、磷锑氮化镓(GaPSbN)、磷砷化铟铝(InAlPAs)、磷氮化铟铝(InAlPN)、磷砷氮化铟(InPAsN)、锑氮化铟铝(InAlSbN)、磷锑氮化铟(InPSbN)、砷锑氮化铟(InAsSbN)和磷锑化铟铝(InAlPSb)。
5.根据权利要求1所述的量子点,其中第12族和第16族的化合物包括选自由以下化合物组成的组中的至少一种:硫化镉(CdS)、硒化镉(CdSe)、碲化镉(CdTe)、硫化锌(ZnS)、硒化锌(ZnSe)、碲化锌(ZnTe)、硫化汞(HgS)、硒化汞(HgSe)、碲化汞(HgTe)、氧化锌(ZnO)、氧化镉(CdO)、氧化汞(HgO)、硒硫化镉(CdSeS)、硒碲化镉(CdSeTe)、硫碲化镉(CdSTe)、硫化镉锌(CdZnS)、硒化镉锌(CdZnSe)、硫硒化镉(CdSSe)、碲化镉锌(CdZnTe)、硫化镉汞(CdHgS)、硒化镉汞(CdHgSe)、碲化镉汞(CdHgTe)、硒硫化锌(ZnSeS)、硒碲化锌(ZnSeTe)、硫碲化锌(ZnSTe)、硒硫化汞(HgSeS)、硒碲化汞(HgSeTe)、硫碲化汞(HgSTe)、硫化汞锌(HgZnS)、硒化汞锌(HgZnSe)、氧化镉锌(CdZnO)、氧化镉汞(CdHgO)、氧化锌汞(ZnHgO)、硒氧化锌(ZnSeO)、碲氧化锌(ZnTeO)、硫氧化锌(ZnSO)、硒氧化镉(CdSeO)、碲氧化镉(CdTeO)、硫氧化镉(CdSO)、硒氧化汞(HgSeO)、碲氧化汞(HgTeO)、硫氧化汞(HgSO)、硒硫化镉锌(CdZnSeS)、硒碲化镉锌(CdZnSeTe)、硫碲化镉锌(CdZnSTe)、硒硫化镉汞(CdHgSeS)、硒碲化镉汞(CdHgSeTe)、硫碲化镉汞(CdHgSTe)、硒硫化汞锌(HgZnSeS)、硒碲化汞锌(HgZnSeTe)、硫碲化汞锌(HgZnSTe)、硒氧化镉锌(CdZnSeO)、碲氧化镉锌(CdZnTeO)、硫氧化镉锌(CdZnSO)、硒氧化镉汞(CdHgSeO)、碲氧化镉汞(CdHgTeO)、硫氧化镉汞(CdHgSO)、硒氧化锌汞(ZnHgSeO)、碲氧化锌汞(ZnHgTeO)和硫氧化锌汞(ZnHgSO)。
6.一种制造量子点的方法,所述方法包括:
形成包括第13族和第15族的化合物、第12族和第16族的化合物或第14族和第16族的化合物的量子点颗粒,所述量子点颗粒与有机配体结合;以及
对量子点颗粒提供卤素化合物以稳定量子点颗粒,从而使得量子点颗粒的(100)表面与卤素盐结合,并且量子点颗粒的(111)表面与有机配体结合,
其中,卤素化合物包括选自由以下化合物组成的组中的至少一个:四丁基溴化铵、十六烷基三甲基溴化铵、氯化铵、溴化铵、碘化铵、氯化钾、溴化钾、碘化钾、氯化钠、溴化钠、碘化钠、氯化铟、溴化铟和碘化铟。
7.根据权利要求6所述的方法,其中形成量子点颗粒包括:
使第一前体与有机酸进行反应;以及
使第二前体与第一前体和有机酸的反应产物进行反应。
8.根据权利要求7所述的方法,其中第一前体包括第12族、第13族或第14族的元素。
9.根据权利要求7所述的方法,其中有机酸包括选自由以下化合物组成的组中的至少一个:甲酸、乙酸、丙酸、戊酸、丁酸、己酸、辛酸、癸酸和月桂酸。
10.根据权利要求7所述的方法,其中第二前体包括第15族或第16族的元素。
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