CH442245A - Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod - Google Patents

Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod

Info

Publication number: CH442245A
Authority: CH; Switzerland
Prior art keywords: rod; crucible; free zone; zone melting; crystalline
Prior art date: 1964-02-01

Application number

CH837566A

Other languages

German (de)

Inventor

Wolfgang Dr Keller

Original Assignee

Siemens Ag

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1964-02-01

Filing date

1966-06-09

Publication date

1967-08-31

1966-06-09 Application filed by Siemens Ag filed Critical Siemens Ag

1967-08-31 Publication of CH442245A publication Critical patent/CH442245A/en

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/32—Mechanisms for moving either the charge or the heater
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/08—Downward pulling
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/91—Downward pulling
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/911—Seed or rod holders
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/912—Replenishing liquid precursor, other than a moving zone
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/917—Magnetic
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Physics & Mathematics (AREA)
Electromagnetism (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Silicon Compounds (AREA)
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

CH837566A 1964-02-01 1966-06-09 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod CH442245A (en)

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
DES89317A DE1218404B (en)	1964-02-01	1964-02-01	Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
NL656506040A NL138766B (en)	1964-02-01	1965-05-12	METHOD OF ENLARGING THE CROSS SECTION OF A MONOCRYSTALLINE ROD-SHAPED BODY USING CRISCHLESS ZONE MELTING.
DES98115A DE1275032B (en)	1964-02-01	1965-07-10	Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
DES98712A DE1263698B (en)	1964-02-01	1965-08-07	Process for crucible-free zone melting

Publications (1)

Publication Number	Publication Date
CH442245A true CH442245A (en)	1967-08-31

Family

ID=27437570

Family Applications (3)

Application Number	Title	Priority Date	Filing Date
CH1115564A CH413785A (en)	1964-02-01	1964-08-26	Method for enlarging the rod cross-section during crucible-free zone melting of a rod-shaped body made of crystalline material, in particular of semiconductor material, held vertically at its ends
CH837566A CH442245A (en)	1964-02-01	1966-06-09	Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
CH837666A CH442246A (en)	1964-02-01	1966-06-09	Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod

Family Applications Before (1)

Application Number	Title	Priority Date	Filing Date
CH1115564A CH413785A (en)	1964-02-01	1964-08-26	Method for enlarging the rod cross-section during crucible-free zone melting of a rod-shaped body made of crystalline material, in particular of semiconductor material, held vertically at its ends

Family Applications After (1)

Application Number	Title	Priority Date	Filing Date
CH837666A CH442246A (en)	1964-02-01	1966-06-09	Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod

Country Status (9)

Country	Link
US (3)	US3477811A (en)
BE (3)	BE664435A (en)
CH (3)	CH413785A (en)
DE (3)	DE1218404B (en)
DK (2)	DK124458B (en)
FR (1)	FR1444259A (en)
GB (3)	GB1044592A (en)
NL (3)	NL138766B (en)
SE (3)	SE309965B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE1272886B (en) *	1966-09-24	1968-07-18	Siemens Ag	Device for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
DE1544301A1 (en) *	1966-09-28	1970-05-27	Siemens Ag	Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
DE1619996A1 (en) *	1967-03-18	1971-07-08	Siemens Ag	Method for producing a single-crystal rod, in particular from semiconductor material
US3607109A (en) *	1968-01-09	1971-09-21	Emil R Capita	Method and means of producing a large diameter single-crystal rod from a polycrystal bar
DE1960088C3 (en) *	1969-11-29	1974-07-25	Siemens Ag, 1000 Berlin Und 8000 Muenchen	Device for crucible-free zone melting of a crystalline rod
DE2234512C3 (en) *	1972-07-13	1979-04-19	Siemens Ag, 1000 Berlin Und 8000 Muenchen	Process for the production of (reoriented semiconductor single crystal rods with a specific resistance thawing towards the center of the rod
US4002523A (en) *	1973-09-12	1977-01-11	Texas Instruments Incorporated	Dislocation-free growth of silicon semiconductor crystals with <110> orientation
US5156211A (en) *	1991-06-10	1992-10-20	Impact Selector, Inc.	Remotely adjustable fishing jar and method for using same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US2972525A (en) *	1953-02-26	1961-02-21	Siemens Ag	Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
NL126240C (en) *	1958-02-19
US3036892A (en) *	1958-03-05	1962-05-29	Siemens Ag	Production of hyper-pure monocrystal-line rods in continuous operation
US3036812A (en) *	1958-11-19	1962-05-29	Dewrance & Co	Butterfly valves
AT223659B (en) *	1960-11-25	1962-10-10	Siemens Ag	Process for the production of dislocation-free single crystal silicon by crucible-free zone melting

1964
- 1964-02-01 DE DES89317A patent/DE1218404B/en active Pending
- 1964-08-26 CH CH1115564A patent/CH413785A/en unknown
- 1964-11-23 SE SE14136/64A patent/SE309965B/xx unknown
1965
- 1965-01-26 GB GB3442/65A patent/GB1044592A/en not_active Expired
- 1965-05-12 NL NL656506040A patent/NL138766B/en not_active IP Right Cessation
- 1965-05-21 FR FR17994A patent/FR1444259A/en not_active Expired
- 1965-05-25 BE BE664435D patent/BE664435A/xx unknown
- 1965-07-10 DE DES98115A patent/DE1275032B/en active Pending
- 1965-08-07 DE DES98712A patent/DE1263698B/en active Pending
1966
- 1966-05-03 NL NL6605968A patent/NL6605968A/xx unknown
- 1966-05-17 DK DK251066AA patent/DK124458B/en unknown
- 1966-05-21 DK DK260666AA patent/DK124459B/en unknown
- 1966-06-06 NL NL666607827A patent/NL146402B/en unknown
- 1966-06-09 CH CH837566A patent/CH442245A/en unknown
- 1966-06-09 CH CH837666A patent/CH442246A/en unknown
- 1966-07-08 SE SE9375/66A patent/SE323654B/xx unknown
- 1966-07-08 BE BE683852D patent/BE683852A/xx unknown
- 1966-07-08 GB GB30903/66A patent/GB1079870A/en not_active Expired
- 1966-07-11 US US564118A patent/US3477811A/en not_active Expired - Lifetime
- 1966-07-11 GB GB31122/66A patent/GB1081600A/en not_active Expired
- 1966-07-26 SE SE10177/66A patent/SE323655B/xx unknown
- 1966-08-05 BE BE685153D patent/BE685153A/xx unknown
1967
- 1967-08-29 US US664211A patent/US3414388A/en not_active Expired - Lifetime
1969
- 1969-08-19 US US853596A patent/US3658598A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
SE309965B (en)	1969-04-14
NL6605968A (en)	1967-01-11
GB1044592A (en)	1966-10-05
DE1275032B (en)	1968-08-14
FR1444259A (en)	1966-07-01
BE685153A (en)	1967-02-06
NL138766B (en)	1973-05-15
DK124459B (en)	1972-10-23
CH442246A (en)	1967-08-31
BE683852A (en)	1967-01-09
GB1079870A (en)	1967-08-16
SE323655B (en)	1970-05-11
GB1081600A (en)	1967-08-31
US3477811A (en)	1969-11-11
CH413785A (en)	1966-05-31
US3658598A (en)	1972-04-25
DE1218404B (en)	1966-06-08
US3414388A (en)	1968-12-03
DE1263698B (en)	1968-03-21
NL146402B (en)	1975-07-15
NL6607827A (en)	1967-02-08
NL6506040A (en)	1966-11-14
BE664435A (en)	1965-11-25
DK124458B (en)	1972-10-23
SE323654B (en)	1970-05-11

Publication	Publication Date	Title
AT261675B (en)	1968-05-10	Process for the epitaxial growth of semiconductor single crystals
AT252314B (en)	1967-02-10	Method for producing a quartz crystal component
CH442246A (en)	1967-08-31	Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
AT259021B (en)	1967-12-27	Process for the epitaxial deposition of a semiconductor which crystallizes after the diamond lattice or after the zincblende lattice
CH420072A (en)	1966-09-15	Method for producing single-crystal semiconductor rods
AT245040B (en)	1966-02-10	Method for producing a single-crystal semiconductor body
AT299129B (en)	1972-06-12	Device for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
CH516476A (en)	1971-12-15	Method for producing a crystal of a compound semiconductor
CH557199A (en)	1974-12-31	DEVICE FOR CRUCIBLE-FREE ZONE MELTING OF A SEMICONDUCTOR ROD.
AT256940B (en)	1967-09-11	Method for producing an epitaxial, crystalline layer, in particular a semiconductor layer
CH387720A (en)	1965-02-15	Method for producing a thermoelectric component
CH458299A (en)	1968-06-30	Method for producing a monocrystalline semiconductor layer
CH468083A (en)	1969-01-31	Method for the shape-changing processing of a crystalline body made of semiconductor material, in particular a silicon single crystal
CH430656A (en)	1967-02-28	Method for crucible-free zone melting of semiconductor material, in particular silicon
CH472236A (en)	1969-05-15	Device for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
AT300040B (en)	1972-07-10	Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
CH444828A (en)	1967-10-15	Method for manufacturing semiconductor components
CH426739A (en)	1966-12-31	Process for producing rod-shaped, crystalline semiconductor material by drawing from a melt located in the crucible
CH386702A (en)	1965-01-15	Process for pulling crystalline semiconductor rods from the melt
CH386395A (en)	1965-01-15	Method for producing elongated, in particular band-shaped semiconductor bodies from a semiconductor melt
CH425736A (en)	1966-12-15	Method for producing single-crystal semiconductor rods
CH464937A (en)	1968-11-15	Process for producing thiamine derivatives
CH408873A (en)	1966-03-15	Method for crucible-free zone melting of a rod-shaped body
CH409884A (en)	1966-03-31	Method for crucible-free zone melting of a semiconductor rod, in particular made of silicon
CH409885A (en)	1966-03-31	Method for the crucible-free pulling of monocrystalline semiconductor rods