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DE1218404B - Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod - Google Patents

Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod

Info

Publication number
DE1218404B
DE1218404B DES89317A DES0089317A DE1218404B DE 1218404 B DE1218404 B DE 1218404B DE S89317 A DES89317 A DE S89317A DE S0089317 A DES0089317 A DE S0089317A DE 1218404 B DE1218404 B DE 1218404B
Authority
DE
Germany
Prior art keywords
rod
crucible
rod part
heating device
free zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES89317A
Other languages
German (de)
Inventor
Dr Rer Nat Wolfgang Keller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DES89317A priority Critical patent/DE1218404B/en
Priority to CH1115564A priority patent/CH413785A/en
Priority to SE14136/64A priority patent/SE309965B/xx
Priority to GB3442/65A priority patent/GB1044592A/en
Priority to NL656506040A priority patent/NL138766B/en
Priority to FR17994A priority patent/FR1444259A/en
Priority to BE664435D priority patent/BE664435A/xx
Priority to DES98115A priority patent/DE1275032B/en
Priority to DES98712A priority patent/DE1263698B/en
Priority to NL6605968A priority patent/NL6605968A/xx
Priority to DK251066AA priority patent/DK124458B/en
Priority to DK260666AA priority patent/DK124459B/en
Priority to NL666607827A priority patent/NL146402B/en
Publication of DE1218404B publication Critical patent/DE1218404B/en
Priority to CH837666A priority patent/CH442246A/en
Priority to CH837566A priority patent/CH442245A/en
Priority to FR65422A priority patent/FR90825E/en
Priority to FR68096A priority patent/FR91257E/en
Priority to BE683852D priority patent/BE683852A/xx
Priority to SE9375/66A priority patent/SE323654B/xx
Priority to GB30903/66A priority patent/GB1079870A/en
Priority to US564118A priority patent/US3477811A/en
Priority to GB31122/66A priority patent/GB1081600A/en
Priority to SE10177/66A priority patent/SE323655B/xx
Priority to BE685153D priority patent/BE685153A/xx
Priority to US664211A priority patent/US3414388A/en
Priority to US853596A priority patent/US3658598A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/32—Mechanisms for moving either the charge or the heater
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/912—Replenishing liquid precursor, other than a moving zone
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)

Description

BUNDESREPUBLIK DEUTSCHLANDFEDERAL REPUBLIC OF GERMANY

DEUTSCHESGERMAN

PATENTAMTPATENT OFFICE

AUSLEGESCHRIFTEDITORIAL

Int. α.:Int. α .:

BOIdBOId

Deutsche Kl.: 12 c - 2German class: 12 c - 2

Nummer: 1218 404Number: 1218 404

Aktenzeichen: S89317IVc/12cFile number: S89317IVc / 12c

Anmeldetag: 1. Februar 1964Filing date: February 1, 1964

Auslegetag: 8. Juni 1966Opening day: June 8, 1966

Bekannt sind Verfahren zum tiegelfreien Zonenschmelzen eines lotrecht an seinen Enden gehalterten kristallinen Stabes, insbesondere Halbleiterstabes, dessen Halterungen, von denen mindestens eine um ihre lotrechte Achse in Drehung versetzt wird, relativ zueinander und zu einer den Stab ringförmig umgebenden Heizeinrichtung in Richtung der Stabachse mit derart aufeinander abgestimmten Geschwindigkeiten bewegt werden, daß die Dicke des aus der Schmelze wieder erstarrenden Stabteils über die lichte Weite der Heizeinrichtung hinaus vergrößert wird.Processes for the crucible-free zone melting of a vertically held at its ends are known crystalline rod, in particular semiconductor rod, its holders, of which at least one is set in rotation about its vertical axis, relative to each other and to one of the Rod ring-shaped surrounding heating device in the direction of the rod axis with such coordinated Speeds are moved that the thickness of the melt resolidifies Rod part is enlarged beyond the clear width of the heating device.

En solches Verfahren wird erfindungsgemäß dadurch verbessert, daß die sich drehende Halterung des wieder erstarrenden Stabteils relativ zur Heizeinrichtung seitlich verschoben wird.En such a method is improved according to the invention in that the rotating holder of the re-solidifying rod part is laterally displaced relative to the heating device.

Das neue Verfahren ermöglichtes, Halbleiterstäbe, vorzugsweise Siliciumstäbe, mit noch größerem Querschnitt als nach dem bekannten Verfahren herzustellen. Der aus der Schmelze wieder erstarrende Stabteil kann wahlweise unterhalb oder oberhalb der Heizspule angeordnet werden.The new method enables semiconductor rods, preferably silicon rods, with even larger Cross-section than to produce according to the known method. The one that solidifies again from the melt The rod part can be arranged either below or above the heating coil.

An Hand eines Ausführungsbeispiels soll die Erfindung näher erläutert werden.The invention is to be explained in more detail using an exemplary embodiment.

In den F i g. 1 bis 4 sind verschiedene Phasen des erfindungsgemäßen Verfahrens dargestellt;In the F i g. 1 to 4 different phases of the method according to the invention are shown;

F i g. 5 zeigt eine andere Ausführungsform.F i g. 5 shows another embodiment.

Nach F i g. 1 wird in einem Halbleiterstab 2, an dessen unterem Ende ein Keimkristall 5 angeschmolzen ist, mit Hilfe einer mit Hochfrequenzstrom gespeisten Induktionsheizspule 3 eine Schmelzzone 4 erzeugt, die durch Aufwärtsbewegen der Heizspule 3 oder bei ruhender Heizspule 3 durch Aufwärtsbewegen der Halterungen des Kristallstabes 2 durch diesen der Länge nach hindurchgezogen werden kann. Der Keimkristall 5 kann ein Einkristall sein, der zum Einkristallzüchten dient. Er und mit ihm der wieder erstarrte Stabteil werden um die lotrechte Achse in Drehung versetzt, indem z. B. die untere Halterung mit Hilfe eines Elektromotors angetrieben wird. Die Schmelzzone ist in dem in Fig. 1 dargestellten Zeitpunkt an der Stelle angelangt, an der der Übergang vom dünnen Keimkristall zu einer größeren, jedoch die lichte Weite der Heizspule nicht überschreitenden Stabdicke erreicht ist.According to FIG. 1 is fused in a semiconductor rod 2, at the lower end of which a seed crystal 5 is, with the aid of an induction heating coil 3 fed with high frequency current, a melting zone 4 generated by moving the heating coil 3 upwards or when the heating coil 3 is at rest by moving it upwards the holders of the crystal rod 2 are pulled through this lengthwise can. The seed crystal 5 may be a single crystal used for single crystal growth. Him and with him the re-solidified rod part are set in rotation about the vertical axis by z. B. the lower one Bracket is driven with the help of an electric motor. The melting zone is in the in Fig. 1 arrived at the point shown, where the transition from the thin seed crystal to a larger one, but the clear width the rod thickness does not exceed the heating coil.

In F i g. 2 sind die darauffolgenden Verfahrensmaßnahmen durch entsprechende Pfeile angedeutet. Der Keimkristalls wird mit Bezug auf die ruhend angenommene Heizspule 3 nicht nur nach unten bewegt, sondern gleichzeitig seitwärts, z. B. im Bild nach rechts, so daß der untere Teil der Schmelz-In Fig. 2 the subsequent procedural measures are indicated by corresponding arrows. The seed crystal is not only downward with respect to the heating coil 3, which is assumed to be stationary moves, but at the same time sideways, z. B. in the picture to the right, so that the lower part of the melting

Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere
HalbleiterstabesMethod for crucible-free zone melting of a crystalline rod, in particular
Semiconductor rod

Anmelder:Applicant:

Siemens-Schuckertwerke Aktiengesellschaft,Siemens-Schuckertwerke Aktiengesellschaft,

Berlin und Erlangen,Berlin and Erlangen,

Erlangen, Werner-von-Siemens-Str. 50Erlangen, Werner-von-Siemens-Str. 50

Als Erfinder benannt:Named as inventor:

Dr. rer. nat. Wolfgang Keller, Pretzfeld (OFr.)Dr. rer. nat. Wolfgang Keller, Pretzfeld (Or.)

zone 4 auch nach rechts gezogen wird. Da der Keimkristall5 um seine Achse rotiert, wächst das aus der Schmelze auskristallisierende Material im wesentlichen symmetrisch zur Drehachse der unteren Stabhalterung auf. Der obere Stabteil 2 wird im entsprechenden Verhältnis von oben nachgeschoben.zone 4 is also dragged to the right. Since the seed crystal5 rotates around its axis, it grows Material crystallizing out of the melt essentially symmetrical to the axis of rotation of the lower Rod holder on. The upper rod part 2 is pushed in from above in the corresponding ratio.

In Fig. 3 ist ein noch späterer Zeitpunkt des Verfahrens dargestellt, in dem durch weiteres Verschieben des Keimkristalls 5 nach rechts ein weiteres Anwachsen des Durchmessers des unteren Stabteils 2 a erreicht ist.In Fig. 3, an even later point in time of the method is shown in which a further increase in the diameter of the lower rod part 2 a is achieved by further displacement of the seed crystal 5 to the right.

Schließlich ist in Fig. 4 der stabile Endzustand des Verfahrens erreicht, in dem keine weitere seitliche Verschiebung des unteren Stabteils 2 α mehr vorgenommen wird, sondern die Stabteile 2 und 2 a mit ihren Halterungen nur noch nach unten bewegt werden. Im Beispiel ist angenommen, daß der Stab auf das Doppelte seines ursprünglichen Durchmessers verdickt und mithin der Stabquerschnitt vervierfacht wird. In diesem Fall muß also mit Bezug auf die Heizspule 3 der obere Stabteil 2 mit der vierfachen Geschwindigkeit nachgeschoben werden, mit der der untere Stabteil 2 a von der Heizspule weggezogen wird. Man kann z. B. annehmen, daß der untere Stabteil 2 a mit einer Geschwindigkeit von 2 mm/min nach unten bewegt wird, während der obere Stabteil 2 mit einer Geschwindigkeit von 8 mm/min nach unten bewegt wird. Die Drehgeschwindigkeit des unteren Stabteils kann etwa 5 bis 100 U/min betragen, vorzugsweise etwa 20 U/min.Finally, in Fig. 4, the stable end state of the method is reached in which no further lateral displacement of the lower rod part 2 α is made, but the rod parts 2 and 2 a with their holders are only moved downwards. In the example it is assumed that the rod is thickened to twice its original diameter and that the rod cross-section is therefore quadrupled. In this case, therefore, has to be adjusted with respect to the heating coil 3, the upper rod part 2 at four times the speed at which the lower rod part 2 is pulled away from the heating coil a. You can z. B. assume that the lower rod part 2 a at a speed of 2 mm / min is moved downwardly, while the upper rod part 2 is moved at a speed of 8 mm / min downward. The speed of rotation of the lower rod part can be approximately 5 to 100 rpm, preferably approximately 20 rpm.

609 578/351609 578/351

Der Übergang der Schmelzzone vom dünnen Keimkristall bis zum Zustand, der in Fig. 4 dargestellt ist, erfordert besondere Aufmerksamkeit, da unter anderem die allmähliche Vergrößerung der Geschwindigkeit, mit der der obere Stabteil 2 nachgeschoben wird, mit einer gleichzeitigen Vergrößerung der in die Spule 3 eingespeisten Heizleistung einhergehen muß.The transition of the melting zone from the thin seed crystal to the state shown in FIG. 4 is, requires special attention, as, among other things, the gradual enlargement of the Speed at which the upper rod part 2 is pushed in, with a simultaneous increase the heating power fed into the coil 3 must go hand in hand.

In F i g. 5 ist eine andere Ausführungsform dargestellt, bei der der wieder erstarrende Stabteil 12 α ίο oberhalb der Heizspule 13 gewonnen wird. Die Stabteile 12 und 12c werden im Verhältnis zur Heizspule 13 nach oben bewegt. Die Schmelzzone 14 .kann wegen der großen Haftfläche am oberen Stabteil 12 α gehalten werden, wenn sie in Richtung der Stabachse besonders kurz dimensioniert wird. Hierfür besonders zweckdienlich ist eine Beheizung 'durch eine flache Induktionsspule mit spiralig angeordneten Windungen. .In Fig. 5 shows another embodiment in which the re-solidifying rod part 12 α o is obtained above the heating coil 13. The rod parts 12 and 12c become in relation to the heating coil 13 moved up. The melting zone 14. Can because of the large adhesive surface on the upper part of the rod 12 α can be kept if it is dimensioned particularly short in the direction of the rod axis. Therefor Heating by means of a flat induction coil with a spiral arrangement is particularly useful Turns. .

Claims (2)

Patentansprüche:Patent claims: 1. Verfahren zum tiegelfreien Zonenschmelzen eines lotrecht an seinen Enden gehalterten kristallinen Stabes, insbesondere Halbleiterstabes, dessen Halterungen, von denen mindestens eine um ihre lotrechte Achse in Drehung versetzt wird, relativ zueinander und zu einer den Stab ringförmig umgebenden Heizeinrichtung in Richtung der Stabachse mit derart aufeinander abgestimmten Geschwindigkeiten bewegt werden, daß die Dicke des aus der Schmelze wieder ererstarrenden Stabteils über die lichte Weite der Heizeinrichtung hinaus vergrößert wird, dadurch gekennzeichnet, daß die sich drehende Halterung des wieder erstarrenden Stabteils relativ zurHeizeinrichtung seitlich verschobenwird.1. Method for crucible-free zone melting of a vertically held at its ends crystalline rod, in particular semiconductor rod, its holders, of which at least one is set in rotation about its vertical axis, relative to one another and to one the rod annularly surrounding heating device in the direction of the rod axis with such one another coordinated speeds are moved so that the thickness of the solidified again from the melt Rod part is enlarged beyond the clear width of the heating device, thereby characterized in that the rotating holder of the re-solidifying rod part is shifted laterally relative to the heating device. 2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß der wieder erstarrte Stabteil nach unten gezogen wird.2. The method according to claim 1, characterized in that the re-solidified rod part is pulled down. Hierzu 1 Blatt Zeichnungen1 sheet of drawings 609 578/351 5.66 © Bundesdruckerei Berlin609 578/351 5.66 © Bundesdruckerei Berlin
DES89317A 1964-02-01 1964-02-01 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod Pending DE1218404B (en)

Priority Applications (26)

Application Number Priority Date Filing Date Title
DES89317A DE1218404B (en) 1964-02-01 1964-02-01 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
CH1115564A CH413785A (en) 1964-02-01 1964-08-26 Method for enlarging the rod cross-section during crucible-free zone melting of a rod-shaped body made of crystalline material, in particular of semiconductor material, held vertically at its ends
SE14136/64A SE309965B (en) 1964-02-01 1964-11-23
GB3442/65A GB1044592A (en) 1964-02-01 1965-01-26 A method of melting a rod of crystalline material zone by zone
NL656506040A NL138766B (en) 1964-02-01 1965-05-12 METHOD OF ENLARGING THE CROSS SECTION OF A MONOCRYSTALLINE ROD-SHAPED BODY USING CRISCHLESS ZONE MELTING.
FR17994A FR1444259A (en) 1964-02-01 1965-05-21 Method of enlarging the cross-section of bars during melting of crucible-free zone of a bar-shaped body made of crystalline material, in particular semiconductor
BE664435D BE664435A (en) 1964-02-01 1965-05-25
DES98115A DE1275032B (en) 1964-02-01 1965-07-10 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
DES98712A DE1263698B (en) 1964-02-01 1965-08-07 Process for crucible-free zone melting
NL6605968A NL6605968A (en) 1964-02-01 1966-05-03
DK251066AA DK124458B (en) 1964-02-01 1966-05-17 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod.
DK260666AA DK124459B (en) 1964-02-01 1966-05-21 Method for crucible zone melting of a crystalline rod, in particular a semiconductor rod.
NL666607827A NL146402B (en) 1964-02-01 1966-06-06 METHOD OF ENLARGING THE CROSS-SECTION OF A LEAD RIGHT AT ITS END CRYSTALLINE ROD-SHAPED BODY USING CRISCHLESS ZONE MELTING.
CH837666A CH442246A (en) 1964-02-01 1966-06-09 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
CH837566A CH442245A (en) 1964-02-01 1966-06-09 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
FR65422A FR90825E (en) 1964-02-01 1966-06-14 Method of enlarging the cross-section of bars during melting of crucible-free zone of a bar-shaped body made of crystalline material, in particular a semiconductor
FR68096A FR91257E (en) 1964-02-01 1966-07-04 Method of enlarging the cross-section of bars during melting of crucible-free zone of a bar-shaped body made of crystalline material, in particular semiconductor
BE683852D BE683852A (en) 1964-02-01 1966-07-08
SE9375/66A SE323654B (en) 1964-02-01 1966-07-08
GB30903/66A GB1079870A (en) 1964-02-01 1966-07-08 A method of melting a rod of crystalline material zone-by-zone
GB31122/66A GB1081600A (en) 1964-02-01 1966-07-11 A method of melting a rod of crystalline material zone-by-zone
US564118A US3477811A (en) 1964-02-01 1966-07-11 Method of crucible-free zone melting crystalline rods,especially of semiconductive material
SE10177/66A SE323655B (en) 1964-02-01 1966-07-26
BE685153D BE685153A (en) 1964-02-01 1966-08-05
US664211A US3414388A (en) 1964-02-01 1967-08-29 Method and apparatus for increasing the cross section of a crystalline rod during crucible-free zone melting
US853596A US3658598A (en) 1964-02-01 1969-08-19 Method of crucible-free zone melting crystalline rods, especially of semiconductor material

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DES89317A DE1218404B (en) 1964-02-01 1964-02-01 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
NL656506040A NL138766B (en) 1964-02-01 1965-05-12 METHOD OF ENLARGING THE CROSS SECTION OF A MONOCRYSTALLINE ROD-SHAPED BODY USING CRISCHLESS ZONE MELTING.
DES98115A DE1275032B (en) 1964-02-01 1965-07-10 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
DES98712A DE1263698B (en) 1964-02-01 1965-08-07 Process for crucible-free zone melting

Publications (1)

Publication Number Publication Date
DE1218404B true DE1218404B (en) 1966-06-08

Family

ID=27437570

Family Applications (3)

Application Number Title Priority Date Filing Date
DES89317A Pending DE1218404B (en) 1964-02-01 1964-02-01 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
DES98115A Pending DE1275032B (en) 1964-02-01 1965-07-10 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
DES98712A Pending DE1263698B (en) 1964-02-01 1965-08-07 Process for crucible-free zone melting

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Application Number Title Priority Date Filing Date
DES98115A Pending DE1275032B (en) 1964-02-01 1965-07-10 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
DES98712A Pending DE1263698B (en) 1964-02-01 1965-08-07 Process for crucible-free zone melting

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US (3) US3477811A (en)
BE (3) BE664435A (en)
CH (3) CH413785A (en)
DE (3) DE1218404B (en)
DK (2) DK124458B (en)
FR (1) FR1444259A (en)
GB (3) GB1044592A (en)
NL (3) NL138766B (en)
SE (3) SE309965B (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1272886B (en) * 1966-09-24 1968-07-18 Siemens Ag Device for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
DE1544301A1 (en) * 1966-09-28 1970-05-27 Siemens Ag Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
DE1619996A1 (en) * 1967-03-18 1971-07-08 Siemens Ag Method for producing a single-crystal rod, in particular from semiconductor material
US3607109A (en) * 1968-01-09 1971-09-21 Emil R Capita Method and means of producing a large diameter single-crystal rod from a polycrystal bar
DE1960088C3 (en) * 1969-11-29 1974-07-25 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for crucible-free zone melting of a crystalline rod
DE2234512C3 (en) * 1972-07-13 1979-04-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for the production of (reoriented semiconductor single crystal rods with a specific resistance thawing towards the center of the rod
US4002523A (en) * 1973-09-12 1977-01-11 Texas Instruments Incorporated Dislocation-free growth of silicon semiconductor crystals with <110> orientation
US5156211A (en) * 1991-06-10 1992-10-20 Impact Selector, Inc. Remotely adjustable fishing jar and method for using same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
NL126240C (en) * 1958-02-19
US3036892A (en) * 1958-03-05 1962-05-29 Siemens Ag Production of hyper-pure monocrystal-line rods in continuous operation
US3036812A (en) * 1958-11-19 1962-05-29 Dewrance & Co Butterfly valves
AT223659B (en) * 1960-11-25 1962-10-10 Siemens Ag Process for the production of dislocation-free single crystal silicon by crucible-free zone melting

Also Published As

Publication number Publication date
NL6605968A (en) 1967-01-11
BE664435A (en) 1965-11-25
DE1275032B (en) 1968-08-14
US3477811A (en) 1969-11-11
SE309965B (en) 1969-04-14
SE323654B (en) 1970-05-11
DE1263698B (en) 1968-03-21
BE685153A (en) 1967-02-06
DK124458B (en) 1972-10-23
GB1044592A (en) 1966-10-05
NL6607827A (en) 1967-02-08
FR1444259A (en) 1966-07-01
NL146402B (en) 1975-07-15
DK124459B (en) 1972-10-23
GB1079870A (en) 1967-08-16
CH413785A (en) 1966-05-31
NL138766B (en) 1973-05-15
CH442245A (en) 1967-08-31
US3414388A (en) 1968-12-03
CH442246A (en) 1967-08-31
GB1081600A (en) 1967-08-31
US3658598A (en) 1972-04-25
BE683852A (en) 1967-01-09
NL6506040A (en) 1966-11-14
SE323655B (en) 1970-05-11

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