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DE1263698B - Process for crucible-free zone melting - Google Patents

Process for crucible-free zone melting

Info

Publication number
DE1263698B
DE1263698B DES98712A DES0098712A DE1263698B DE 1263698 B DE1263698 B DE 1263698B DE S98712 A DES98712 A DE S98712A DE S0098712 A DES0098712 A DE S0098712A DE 1263698 B DE1263698 B DE 1263698B
Authority
DE
Germany
Prior art keywords
rod
melt
heating device
rod part
diameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES98712A
Other languages
German (de)
Inventor
Dr Rer Nat Wolfgang Keller
Guenther Berger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DES89317A priority Critical patent/DE1218404B/en
Priority to CH1115564A priority patent/CH413785A/en
Priority to SE14136/64A priority patent/SE309965B/xx
Priority to GB3442/65A priority patent/GB1044592A/en
Priority to NL656506040A priority patent/NL138766B/en
Priority to FR17994A priority patent/FR1444259A/en
Priority to BE664435D priority patent/BE664435A/xx
Priority to DES98115A priority patent/DE1275032B/en
Application filed by Siemens AG filed Critical Siemens AG
Priority to DES98712A priority patent/DE1263698B/en
Priority to NL6605968A priority patent/NL6605968A/xx
Priority to DK251066AA priority patent/DK124458B/en
Priority to DK260666AA priority patent/DK124459B/en
Priority to NL666607827A priority patent/NL146402B/en
Priority to CH837666A priority patent/CH442246A/en
Priority to CH837566A priority patent/CH442245A/en
Priority to FR65422A priority patent/FR90825E/en
Priority to FR68096A priority patent/FR91257E/en
Priority to BE683852D priority patent/BE683852A/xx
Priority to SE9375/66A priority patent/SE323654B/xx
Priority to GB30903/66A priority patent/GB1079870A/en
Priority to GB31122/66A priority patent/GB1081600A/en
Priority to US564118A priority patent/US3477811A/en
Priority to SE10177/66A priority patent/SE323655B/xx
Priority to BE685153D priority patent/BE685153A/xx
Priority to US664211A priority patent/US3414388A/en
Publication of DE1263698B publication Critical patent/DE1263698B/en
Priority to US853596A priority patent/US3658598A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/32—Mechanisms for moving either the charge or the heater
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/912—Replenishing liquid precursor, other than a moving zone
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)

Description

BUNDESREPUBLIK DEUTSCHLANDFEDERAL REPUBLIC OF GERMANY

DEUTSCHESGERMAN

PATENTAMTPATENT OFFICE

AUSLEGESCHRIFTEDITORIAL

Int. CL: Int. CL:

Nummer:
Aktenzeichen:
Anmeldetag:
Auslegetag:Number:
File number:
Registration date:
Display day:

BOIdBOId

BOIjBOIj

Deutsche Kl.: 12 c-2German class: 12 c-2

1263 698
S98712IVc/12c
7. August 1965
21. März 19681263 698
S98712IVc / 12c
August 7, 1965
March 21, 1968

Das Hauptpatent 1218 404 bezieht sich auf ein Verfahren zum tiegelfreien Zonenschmelzen eines lot-' recht an seinen Enden gehalterten kristallinen Stabes, insbesondere Halbleiterstabes, dessen Halterungen, von denen mindestens eine um ihre lotrechte Achse in Drehung versetzt wird, relativ zueinander und zu einer den Stab ringförmig umgebenden Heizeinrichtung in Richtung der Stabachse mit derart aufeinander abgestimmten Geschwindigkeiten bewegt werden, daß die Dicke des aus der Schmelze wiedererstarrenden Stabteils über die lichte Weite der Heizeinrichtung hinaus vergrößert wird. Nach dem Verfahren des Hauptpatents wird die sich drehende Halterung des wiedererstarrenden Stabteils relativ zur Heizeinrichtung seitlich verschoben. Nach Erreichen des Sollquerschnitts wird die Halterung des wiedererstarrenden Stabteils relativ zur Heizeinrichtung nur noch in der Höhe verschoben.The main patent 1218 404 refers to a Process for crucible-free zone melting of a solder right at its ends held crystalline rod, in particular semiconductor rod, its holders, at least one of which is set in rotation about its vertical axis, relative to one another and to a heating device surrounding the rod in the shape of a ring in the direction of the rod axis with such one another coordinated speeds are moved that the thickness of the resolidifying from the melt Rod part is enlarged beyond the clear width of the heating device. After the procedure of the main patent is the rotating support of the re-solidifying rod part relative to the heating device shifted sideways. After reaching the target cross-section, the holder of the re-solidifying Rod part only moved in height relative to the heating device.

Dieses Verfahren wird erfindungsgemäß dadurch weitergebildet, daß der Durchmesser des der Schmelze zugeführten Stabteils größer als der Innendurchmesser der Heizeinrichtung gewählt und die Schmelze eingeschnürt wird. Durch diese Maßnahmen wird erreicht, daß der Stab nur in einem verhältnismäßig kleinen Bereich aufgeschmolzen und die Schmelze durch das Magnetfeld der unter ihr befindlichen Spulenwindungen gestützt wird, so daß ein Abtropfen auch von Stäben mit größerem Durchmesser verhindert wird. Die Stützwirkung kann durch Wahl einer geeigneten Heizstromfrequenz, beispielsweise in dem Bereich zwischen 500 kHz und 2 MHz, nöch~erhöht werden.According to the invention, this method is further developed in that the diameter of the melt supplied rod part selected larger than the inner diameter of the heating device and constricted the melt will. By these measures it is achieved that the rod only in a relatively small Area melted and the melt through the magnetic field of the coil windings below it is supported, so that dripping off rods with a larger diameter is prevented. The supporting effect can be achieved by choosing a suitable heating current frequency, for example in the range between 500 kHz and 2 MHz, further increased.

Das erfindungsgemäße Verfahren hat insbesondere den Vorteil, daß mit ihm Stäbe großen Durchmessers hergestellt werden können, deren Länge größer ist als die der nach dem Verfahren des Hauptpatents hergestellten Stäbe. Ferner wird eine bessere Materialausbeute erzielt, da die für die Weiterverarbeitung unbrauchbaren Stabenden von langen und von kurzen Stäben gleiche Größe haben. Außerdem besteht die Möglichkeit, Stäbe mit gegenüber dem Verfahren des Hauptpatents weiter vergrößertem Querschnitt herzustellen. Vorteilhaft ist es aber auch, den Querschnitt des der Schmelze zugeführten Stabteils gleich dem gewünschten Querschnitt des auskristallisierten Stabteils zu wählen, wodurch eine große Stablänge erzielt wird und der Stab mehrfach durch die Heizspule hindurchgeführt werden kann.The method according to the invention has the particular advantage that with it rods of large diameter can be produced, the length of which is greater than that produced by the method of the main patent Bars. In addition, a better material yield is achieved, since it is necessary for further processing useless rod ends of long and short rods have the same size. In addition, there is the possibility of rods with a cross-section that is further enlarged compared to the method of the main patent to manufacture. However, it is also advantageous for the cross section of the rod part fed to the melt to be the same to choose the desired cross-section of the crystallized rod part, whereby a large rod length is achieved and the rod can be passed several times through the heating coil.

An Hand eines Ausführungsbeispieles soll die Erfindung näher erläutert werden.The invention is to be explained in more detail using an exemplary embodiment.

F i g. 1 bis 3 stellen verschiedene Phasen des erfrndungsgemäßen Verfahrens dar.F i g. 1 to 3 represent different phases of the invention Procedure.

In F i g. 1 wurde an dem unteren Ende eines stab-Verfahren zum tiegelfreien ZonenschmelzenIn Fig. 1 was at the bottom of a rod process for crucible-free zone melting

Zusatz zum Patent: 1218 404Addendum to the patent: 1218 404

Anmelder:Applicant:

Siemens Aktiengesellschaft, Berlin und München, 8520 Erlangen, Werner-von-Siemens-Str. 50Siemens Aktiengesellschaft, Berlin and Munich, 8520 Erlangen, Werner-von-Siemens-Str. 50

Als Erfinder benannt:Named as inventor:

Dr. rer. nat. Wolfgang Keller, 8551 Pretzfeld;Dr. rer. nat. Wolfgang Keller, 8551 Pretzfeld;

Günther Berger, 8000 MünchenGünther Berger, 8000 Munich

förmigen Körpers 2, der beispielsweise aus halbleitendem Material besteht und dessen Durchmesser größer ist als der Innendurchmesser einer Induktionsheizspule 3, erne Verjüngung 4 angebracht, die von der ringförmigen Heizspule umschlossen ist. Die Verjüngung kann z. B. mechanisch durch Abschleifen oder Sandstrahlen oder chemisch mittels Ätzen hergestellt sein. In dem vorliegenden Beispiel sei sie jedoch durch Anschmelzen eines dünnen stabf örmigen Keimkristalls entstanden, welcher z. B. ein Einkristall sein kann, der zum Einkristallzüchten dient.shaped body 2, which consists for example of semiconducting material and whose diameter is larger is attached as the inner diameter of an induction heating coil 3, erne taper 4, which is of the annular heating coil is enclosed. The taper can be, for. B. mechanically by grinding or Sandblasting or chemically produced by means of etching. In the present example, however, it is created by melting a thin rod-shaped seed crystal, which z. B. be a single crystal can, which is used for growing single crystals.

Die mit Hochfrequenzstrom gespeiste Heizspule 3 erzeugt eine Schmelzzone 5. Der Keimkristall 4 werde um seine lotrechte Achse gedreht. Wie aus der Zeichnung hervorgeht, ist die Schmelzzone im Zeitpunkt, der in F i g. 1 dargestellt ist, an der Stelle angelangt, an der der Übergang vom dünnen Keimkristall zur normalen Stabdicke erreicht ist.The heating coil 3 fed with high-frequency current generates a melting zone 5. The seed crystal 4 will rotated about its vertical axis. As can be seen from the drawing, the melting zone is at the time the in F i g. 1 is shown, arrived at the point at which the transition from the thin seed crystal to normal rod thickness is reached.

In Fig. 2 werden die weiteren Verfahrensmaßnahmen in einem späteren Zeitpunkt durch entsprechende Pfeile dargestellt. Der Keimkristall 4 wird nicht nur nach unten mit Bezug auf die ruhend angenommene Heizspule 3, sondern gleichzeitig in der Bildebene nach rechts bewegt. Hierdurch wird auch die Schmelzzone nach rechts auseinandergezogen. Der obere Stabteil 2 wird im entsprechenden Verhältnis von oben nachgeschoben. Der entstehende untere Stabteil ist mit 2 a bezeichnet.In FIG. 2, the further procedural measures are shown at a later point in time by corresponding arrows. The seed crystal 4 is not only moved downward with respect to the heating coil 3, which is assumed to be stationary, but at the same time to the right in the image plane. This also pulls the melting zone apart to the right. The upper rod part 2 is pushed in from above in the corresponding ratio. The resulting lower rod part is denoted by 2 a .

In F i g. 3 ist der stabile Endzustand des Verfahrens dargestellt, in dem keine weitere seitliche Verschiebung des unteren Stabteils mehr vorgenommenIn Fig. 3 is the final stable state of the process shown, in which no further lateral displacement of the lower rod part is made

• ;. . ; 809 519/548•;. . ; 809 519/548

wird, sondern die Stabteile 2 und la nur .noch nach unten bewegt werden.will, but the rod parts 2 and la only .noch be moved downwards.

Das Verfahren wurde an einem Beispiel beschrieben, bei dem der Durchmesser des auskristallisierten Stabteils gleich dem des der Schmelze zugeführten Sfabteils ist, bei dem ferner der Stab durch die feststehende Heizspule von oben nach unten hindurchgeführt wird und bei dem der unten angeschmolzene Keimkristall um seine lotrechte Achse gedreht wird. Es ist jedoch ohne weiteres einzusehen, daß die gleiche Lehre auch für den Fall gilt, daß die Heizspule über den feststehenden Stab hinweggeführt wird, daß beide Stabteile im entgegengesetztem Sinn um ihre Achse gedreht werden oder nur der der Schmelze zugeführte Stabteil gedreht wird, daß der Keimkristall oben angeschmolzen wird und der Stab und/oder die Heizeinrichtung entsprechend bewegt werden. Ferner ist es möglich, die Halterungen des Stabes und gegebenenfalls die Heizeinrichtung so gegeneinander zu bewegen, daß der Durchmesser des ao aus der Schmelze auskristallisierenden Stabteils ver- : kleinert oder weiter vergrößert wird.The method has been described using an example in which the diameter of the crystallized rod part is the same as that of the Sfabteils fed to the melt, in which the rod is also passed through the fixed heating coil from top to bottom and in which the seed crystal melted at the bottom around its vertical axis is rotated. However, it is readily understood that the same teaching also applies in the event that the heating coil is passed over the fixed rod, that both rod parts are rotated in opposite directions about their axis or only the rod part supplied to the melt is rotated that the Seed crystal is melted on top and the rod and / or the heating device are moved accordingly. Further, it is possible to move the brackets of the rod and optionally the heating device against each other so that the diameter of ao from the melt crystallizing rod part comparable: kleinert or is further increased.

Die Kristallqualität kann dadurch noch verbessert werden, daß die aus der Schmelze auskristallisierende Zone mittels einer weiteren ringförmigeh Heizeinrichrung, deren Temperatur mindestens gleich der Schmelztemperatur des behandelten Materials ist, nachbeheizt und dadurch der Vorgang des Erstarrens vergleichmäßigt wird. Auch kann es vorteilhaft sein, den der Schmelze zugeführten Stab mittels einer weiteren ringförmigen Heizeinrichtung vorzuheizen.The crystal quality can be further improved by the crystallizing from the melt Zone by means of a further ring-shaped heating device, whose temperature is at least equal to the melting temperature of the treated material, post-heated and thereby the process of solidification is evened out. It can also be advantageous preheating the rod fed to the melt by means of a further annular heating device.

Claims (3)

Patentansprüche:Patent claims: 1. Verfahren zum tiegelfreien Zonenschmelzen .eines lotrecht an.seinen Enden gehalterten kristallinen Stabes, insbesondere Halbleiterstabes, dessen Halterungen, von denen mindestens eine um ihre lotrechte Achse in Drehung versetzt wird, relativ zueinander und zu einer den Stab ringförmig umgebenden Heizeinrichtung in Richtung der Stabachse mit derart aufeinander abgestimmten Geschwindigkeiten bewegt werden, daß die Dicke des aus der Schmelze wiedererstarrenden Stabteils über die lichte Weite der Heizeinrichtung hinaus vergrößert wird, wobei die sich drehende Halterung des wiedererstarrenden Stabteils relativ zur Heizeinrichtung seitlich verschoben wird, nach Patent 1218404, dadurch gekennzeichnet, daß der Durchmesser des der Schmelze zugeführten Stabteils größer als der Innendurchmesser der Heizeinrichtung gewählt und die Schmelzzone eingeschnürt wird.1. Process for crucible-free zone melting of a crystalline which is held vertically at its ends Rod, in particular semiconductor rod, its holders, of which at least one around their vertical axis is set in rotation, relative to each other and to a ring of the rod surrounding heating device in the direction of the rod axis with such coordinated Speeds are moved that the thickness of the rod part resolidifying from the melt is enlarged beyond the clear width of the heating device, the rotating bracket of the re-solidifying rod part is laterally displaced relative to the heating device, according to Patent 1218404, characterized in that that the diameter of the rod part fed to the melt is greater than the inner diameter the heating device is selected and the melting zone is constricted. 2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß der Durchmesser des auskristallisierten Stabteils gleich dem Durchmesser des der Schmelze zugeführten Stabteils gemacht wird.2. The method according to claim 1, characterized in that the diameter of the crystallized Rod part made equal to the diameter of the rod part fed to the melt will. 3. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß der der Schmelze zugeführte Stabteil in der Nachbarschaft der Schmelze mittels einer weiteren Heizeinrichtung zusätzlich beheizt wird.3. The method according to claim 1 or 2, characterized in that the supplied to the melt Rod part in the vicinity of the melt is additionally heated by means of a further heating device will. Hierzu 1 Blatt Zeichnungen1 sheet of drawings 809 519/548 3.68 © Bundesdruckerei Berlin809 519/548 3.68 © Bundesdruckerei Berlin
DES98712A 1964-02-01 1965-08-07 Process for crucible-free zone melting Pending DE1263698B (en)

Priority Applications (26)

Application Number Priority Date Filing Date Title
DES89317A DE1218404B (en) 1964-02-01 1964-02-01 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
CH1115564A CH413785A (en) 1964-02-01 1964-08-26 Method for enlarging the rod cross-section during crucible-free zone melting of a rod-shaped body made of crystalline material, in particular of semiconductor material, held vertically at its ends
SE14136/64A SE309965B (en) 1964-02-01 1964-11-23
GB3442/65A GB1044592A (en) 1964-02-01 1965-01-26 A method of melting a rod of crystalline material zone by zone
NL656506040A NL138766B (en) 1964-02-01 1965-05-12 METHOD OF ENLARGING THE CROSS SECTION OF A MONOCRYSTALLINE ROD-SHAPED BODY USING CRISCHLESS ZONE MELTING.
FR17994A FR1444259A (en) 1964-02-01 1965-05-21 Method of enlarging the cross-section of bars during melting of crucible-free zone of a bar-shaped body made of crystalline material, in particular semiconductor
BE664435D BE664435A (en) 1964-02-01 1965-05-25
DES98115A DE1275032B (en) 1964-02-01 1965-07-10 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
DES98712A DE1263698B (en) 1964-02-01 1965-08-07 Process for crucible-free zone melting
NL6605968A NL6605968A (en) 1964-02-01 1966-05-03
DK251066AA DK124458B (en) 1964-02-01 1966-05-17 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod.
DK260666AA DK124459B (en) 1964-02-01 1966-05-21 Method for crucible zone melting of a crystalline rod, in particular a semiconductor rod.
NL666607827A NL146402B (en) 1964-02-01 1966-06-06 METHOD OF ENLARGING THE CROSS-SECTION OF A LEAD RIGHT AT ITS END CRYSTALLINE ROD-SHAPED BODY USING CRISCHLESS ZONE MELTING.
CH837666A CH442246A (en) 1964-02-01 1966-06-09 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
CH837566A CH442245A (en) 1964-02-01 1966-06-09 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
FR65422A FR90825E (en) 1964-02-01 1966-06-14 Method of enlarging the cross-section of bars during melting of crucible-free zone of a bar-shaped body made of crystalline material, in particular a semiconductor
FR68096A FR91257E (en) 1964-02-01 1966-07-04 Method of enlarging the cross-section of bars during melting of crucible-free zone of a bar-shaped body made of crystalline material, in particular semiconductor
BE683852D BE683852A (en) 1964-02-01 1966-07-08
SE9375/66A SE323654B (en) 1964-02-01 1966-07-08
GB30903/66A GB1079870A (en) 1964-02-01 1966-07-08 A method of melting a rod of crystalline material zone-by-zone
GB31122/66A GB1081600A (en) 1964-02-01 1966-07-11 A method of melting a rod of crystalline material zone-by-zone
US564118A US3477811A (en) 1964-02-01 1966-07-11 Method of crucible-free zone melting crystalline rods,especially of semiconductive material
SE10177/66A SE323655B (en) 1964-02-01 1966-07-26
BE685153D BE685153A (en) 1964-02-01 1966-08-05
US664211A US3414388A (en) 1964-02-01 1967-08-29 Method and apparatus for increasing the cross section of a crystalline rod during crucible-free zone melting
US853596A US3658598A (en) 1964-02-01 1969-08-19 Method of crucible-free zone melting crystalline rods, especially of semiconductor material

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DES89317A DE1218404B (en) 1964-02-01 1964-02-01 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
NL656506040A NL138766B (en) 1964-02-01 1965-05-12 METHOD OF ENLARGING THE CROSS SECTION OF A MONOCRYSTALLINE ROD-SHAPED BODY USING CRISCHLESS ZONE MELTING.
DES98115A DE1275032B (en) 1964-02-01 1965-07-10 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
DES98712A DE1263698B (en) 1964-02-01 1965-08-07 Process for crucible-free zone melting

Publications (1)

Publication Number Publication Date
DE1263698B true DE1263698B (en) 1968-03-21

Family

ID=27437570

Family Applications (3)

Application Number Title Priority Date Filing Date
DES89317A Pending DE1218404B (en) 1964-02-01 1964-02-01 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
DES98115A Pending DE1275032B (en) 1964-02-01 1965-07-10 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
DES98712A Pending DE1263698B (en) 1964-02-01 1965-08-07 Process for crucible-free zone melting

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DES89317A Pending DE1218404B (en) 1964-02-01 1964-02-01 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
DES98115A Pending DE1275032B (en) 1964-02-01 1965-07-10 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod

Country Status (9)

Country Link
US (3) US3477811A (en)
BE (3) BE664435A (en)
CH (3) CH413785A (en)
DE (3) DE1218404B (en)
DK (2) DK124458B (en)
FR (1) FR1444259A (en)
GB (3) GB1044592A (en)
NL (3) NL138766B (en)
SE (3) SE309965B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1272886B (en) * 1966-09-24 1968-07-18 Siemens Ag Device for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
DE1544301A1 (en) * 1966-09-28 1970-05-27 Siemens Ag Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
DE1619996A1 (en) * 1967-03-18 1971-07-08 Siemens Ag Method for producing a single-crystal rod, in particular from semiconductor material
US3607109A (en) * 1968-01-09 1971-09-21 Emil R Capita Method and means of producing a large diameter single-crystal rod from a polycrystal bar
DE1960088C3 (en) * 1969-11-29 1974-07-25 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for crucible-free zone melting of a crystalline rod
DE2234512C3 (en) * 1972-07-13 1979-04-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for the production of (reoriented semiconductor single crystal rods with a specific resistance thawing towards the center of the rod
US4002523A (en) * 1973-09-12 1977-01-11 Texas Instruments Incorporated Dislocation-free growth of silicon semiconductor crystals with <110> orientation
US5156211A (en) * 1991-06-10 1992-10-20 Impact Selector, Inc. Remotely adjustable fishing jar and method for using same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
NL126240C (en) * 1958-02-19
US3036892A (en) * 1958-03-05 1962-05-29 Siemens Ag Production of hyper-pure monocrystal-line rods in continuous operation
US3036812A (en) * 1958-11-19 1962-05-29 Dewrance & Co Butterfly valves
AT223659B (en) * 1960-11-25 1962-10-10 Siemens Ag Process for the production of dislocation-free single crystal silicon by crucible-free zone melting

Also Published As

Publication number Publication date
NL6605968A (en) 1967-01-11
BE664435A (en) 1965-11-25
DE1218404B (en) 1966-06-08
DE1275032B (en) 1968-08-14
US3477811A (en) 1969-11-11
SE309965B (en) 1969-04-14
SE323654B (en) 1970-05-11
BE685153A (en) 1967-02-06
DK124458B (en) 1972-10-23
GB1044592A (en) 1966-10-05
NL6607827A (en) 1967-02-08
FR1444259A (en) 1966-07-01
NL146402B (en) 1975-07-15
DK124459B (en) 1972-10-23
GB1079870A (en) 1967-08-16
CH413785A (en) 1966-05-31
NL138766B (en) 1973-05-15
CH442245A (en) 1967-08-31
US3414388A (en) 1968-12-03
CH442246A (en) 1967-08-31
GB1081600A (en) 1967-08-31
US3658598A (en) 1972-04-25
BE683852A (en) 1967-01-09
NL6506040A (en) 1966-11-14
SE323655B (en) 1970-05-11

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E77 Valid patent as to the heymanns-index 1977