[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

AT300040B - Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod - Google Patents

Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod

Info

Publication number
AT300040B
AT300040B AT83269A AT83269A AT300040B AT 300040 B AT300040 B AT 300040B AT 83269 A AT83269 A AT 83269A AT 83269 A AT83269 A AT 83269A AT 300040 B AT300040 B AT 300040B
Authority
AT
Austria
Prior art keywords
rod
crucible
free zone
zone melting
crystalline
Prior art date
Application number
AT83269A
Other languages
German (de)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CH298568A external-priority patent/CH466237A/en
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT300040B publication Critical patent/AT300040B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28Controlling or regulating
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
AT83269A 1968-02-29 1969-01-28 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod AT300040B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH298568A CH466237A (en) 1968-02-29 1968-02-29 Method and device for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
CH804368 1968-05-30

Publications (1)

Publication Number Publication Date
AT300040B true AT300040B (en) 1972-07-10

Family

ID=25691891

Family Applications (1)

Application Number Title Priority Date Filing Date
AT83269A AT300040B (en) 1968-02-29 1969-01-28 Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod

Country Status (8)

Country Link
AT (1) AT300040B (en)
BE (1) BE728975A (en)
DE (1) DE1808618C3 (en)
DK (1) DK125743B (en)
ES (1) ES364223A1 (en)
FR (1) FR2002885A1 (en)
GB (1) GB1167490A (en)
NL (1) NL6902524A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2579953A (en) * 1951-02-13 1951-12-25 Naomi M Morris Adjustable shoe gripper

Also Published As

Publication number Publication date
DE1808618B2 (en) 1974-03-21
DK125743B (en) 1973-04-30
FR2002885A1 (en) 1969-10-31
BE728975A (en) 1969-08-26
DE1808618A1 (en) 1969-09-04
NL6902524A (en) 1969-09-02
ES364223A1 (en) 1971-02-16
GB1167490A (en) 1969-10-15
DE1808618C3 (en) 1974-10-17

Similar Documents

Publication Publication Date Title
CH495842A (en) Method for producing a layer component
CH376584A (en) Method for producing single-crystal semiconductor rods
CH517381A (en) Method for manufacturing a semiconductor rectifier and semiconductor rectifier manufactured according to this method
CH501321A (en) Method for cooling a load consisting of a partially stabilized superconducting magnet
CH498490A (en) Method for manufacturing a semiconductor component
CH442245A (en) Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
CH534007A (en) Method for producing a tubular body from semiconductor material
AT308830B (en) Method for producing a hollow body made of semiconductor material, which is open at least on one side
AT245040B (en) Method for producing a single-crystal semiconductor body
AT299129B (en) Device for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
CH420072A (en) Method for producing single-crystal semiconductor rods
CH516476A (en) Method for producing a crystal of a compound semiconductor
CH557199A (en) DEVICE FOR CRUCIBLE-FREE ZONE MELTING OF A SEMICONDUCTOR ROD.
AT256940B (en) Method for producing an epitaxial, crystalline layer, in particular a semiconductor layer
AT300040B (en) Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
CH468083A (en) Method for the shape-changing processing of a crystalline body made of semiconductor material, in particular a silicon single crystal
CH472236A (en) Device for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
CH458299A (en) Method for producing a monocrystalline semiconductor layer
CH430656A (en) Method for crucible-free zone melting of semiconductor material, in particular silicon
AT320481B (en) Method for producing a tension-free package
CH386395A (en) Method for producing elongated, in particular band-shaped semiconductor bodies from a semiconductor melt
CH534540A (en) Method for crucible-free zone melting of a crystalline rod
CH409884A (en) Method for crucible-free zone melting of a semiconductor rod, in particular made of silicon
CH408873A (en) Method for crucible-free zone melting of a rod-shaped body
CH479163A (en) Method for manufacturing a semiconductor component

Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee