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WO2022179151A1 - 一种智能功率模块及其制备方法 - Google Patents

一种智能功率模块及其制备方法 Download PDF

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Publication number
WO2022179151A1
WO2022179151A1 PCT/CN2021/126772 CN2021126772W WO2022179151A1 WO 2022179151 A1 WO2022179151 A1 WO 2022179151A1 CN 2021126772 W CN2021126772 W CN 2021126772W WO 2022179151 A1 WO2022179151 A1 WO 2022179151A1
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WO
WIPO (PCT)
Prior art keywords
substrate
power module
welding
pins
intelligent power
Prior art date
Application number
PCT/CN2021/126772
Other languages
English (en)
French (fr)
Inventor
江伟
史波
曾丹
曹俊
廖勇波
肖婷
Original Assignee
珠海零边界集成电路有限公司
珠海格力电器股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 珠海零边界集成电路有限公司, 珠海格力电器股份有限公司 filed Critical 珠海零边界集成电路有限公司
Priority to US18/255,234 priority Critical patent/US20240006280A1/en
Priority to JP2023558923A priority patent/JP7522940B2/ja
Publication of WO2022179151A1 publication Critical patent/WO2022179151A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H01L23/4952—Additional leads the additional leads being a bump or a wire
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4825—Connection or disconnection of other leads to or from flat leads, e.g. wires, bumps, other flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H01L23/49524—Additional leads the additional leads being a tape carrier or flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates

Definitions

  • the present disclosure relates to the technical field of electronic devices, and in particular, to an intelligent power module and a preparation method thereof.
  • the Intelligent Power Module not only integrates the power switching device and the drive circuit, but also has built-in fault detection circuits such as overvoltage, overcurrent and overheating. It is easy to use, not only reducing the size of the system, but also enhancing the system Reliability, win more and more market, especially suitable for drive motor inverter and various inverter power supply, is a very ideal power for variable frequency speed regulation, metallurgical machinery, electric traction, servo drive, variable frequency home appliances electronic devices.
  • the intelligent power module in order to improve the heat dissipation capability of the module, it will be a trend to use a DBC ceramic substrate as the chip carrier; the chip is welded on the substrate, and the substrate is provided with a plurality of pins that are electrically connected to the chip, and the pins can be connected to the chip through the intermediate frame. Other components are electrically connected to realize the electrical connection between the chip and other components.
  • the reliability of the bonding structure between the intermediate frame and the pins on the substrate is poor, and it is easy to cause adjacent pins.
  • the connection leads to risks such as short circuit. Therefore, how to solve the reliable combination of the intermediate frame and the pins on the substrate is an urgent problem to be solved at present.
  • the present disclosure discloses an intelligent power module and a preparation method thereof.
  • the support part of the connection structure of the external lead frame can isolate two adjacent welding feet, and during reflow soldering, the direction of the bonding material is reduced.
  • the risk of splashing on both sides can prevent the bonding material from flowing to the adjacent welding feet, effectively reducing the risk of short circuit caused by the connection of the bonding materials on the adjacent welding feet; the welding feet are covered in the connection structure, and the support parts on both sides can To a certain limit, it can effectively avoid the risk of dislocation of the welding point during the preparation, and effectively ensure the accuracy of the connection between the lead and the welding pin.
  • An intelligent power module comprising:
  • a substrate on which a chip and a plurality of conductive pins are arranged at intervals along the circumference of the chip, one end of each of the conductive pins is connected to the chip, and the end of the other end forms a welding pin ;
  • the external lead frame includes a plurality of leads corresponding to the plurality of soldering pins one-to-one, and an end of one end of each lead is formed with a connection structure configured to be connected with the corresponding soldering pins;
  • the connection structure includes: a connection portion corresponding to the top surface of the soldering leg, and supports located on both sides of the connection portion and extending toward the substrate part, the arrangement direction of the support parts is the same as the arrangement direction of the welding legs, a accommodating space is formed between the two support parts, and the welding legs are located between the two support parts;
  • the bonding material is arranged on the top surface of the welding leg, and the bonding material is located between the welding leg and the connecting part, and the welding leg and the connecting part are connected by the bonding material .
  • a substrate is included, a chip is welded on the substrate, and a plurality of conductive pins are arranged on the substrate, and the conductive pins are arranged at intervals around the outer peripheral side of the chip, and adjacent conductive pins are arranged.
  • one end of each conductive pin is connected to the electrode metal of the chip, so as to realize the electrical connection between each conductive pin and the chip, and the end of the other end of each conductive pin forms a welding pin, then a plurality of The soldering pins are distributed on the peripheral side of the chip in turn, and are arranged at intervals along the circumferential direction of the chip.
  • a plurality of soldering pins located on the same side of the peripheral side of the chip can be arranged in order and have an arrangement direction; the external pins
  • the frame includes a plurality of leads, the leads are conductive leads, and the plurality of leads are connected to a plurality of solder pins on the substrate in a one-to-one correspondence. Specifically, among the corresponding leads and solder pins, the end of one end of each lead is formed
  • the connection structure connected with the soldering pins specifically, in each group of mutually corresponding connection structures and soldering pins, the connection structure includes a connection portion opposite to the top surface of the soldering pins that is away from the substrate, and on both sides of the connection portion has a connection toward the substrate.
  • the support portion extending in the direction forms an accommodation space between the two support portions on both sides of the connection portion, the welding feet can be located in the accommodation spaces of the two support portions, and the top surface of the welding leg is opposite to the connection portion, wherein the two supports
  • the arrangement direction of the parts is the same as the arrangement direction of the solder pins, that is, in the connection structure, two support parts are formed extending from the two sides of the connection part toward the substrate respectively, and the two support parts and the connection part form a concave part.
  • the groove structure, and the cross section of the groove structure is an inverted "U" shape, wherein the two support parts respectively form two side walls, and the connecting part forms the bottom wall of the groove structure.
  • connection structure is covered on the welding leg, the connection part is opposite to the top surface of the welding leg, and the two supporting parts are located on opposite sides of the welding leg respectively. Since there are multiple welding legs and corresponding multiple leads, there are multiple After the welding feet are assembled and connected with a plurality of connecting structures one-to-one, along the arrangement direction of the welding feet, the connecting structure is covered on the welding feet, and the supporting part of the connecting structure will be between the two adjacent welding feet. The two adjacent welding feet are isolated, and the connecting structure covers the bonding material on the top surface of the connecting feet. When reflow soldering is performed, the bonding material can be effectively prevented from spattering to both sides, and the spattering of the bonding material to both sides can be reduced.
  • connection structure of the leads and the soldering feet are limited. It is stable, which can effectively reduce the risk of dislocation of the solder joints caused by vibration and other factors during the preparation process, and effectively ensure the connection accuracy of the leads and the solder pins.
  • the support portion of the connection structure of the external lead frame can isolate the two adjacent soldering pins, during reflow soldering, the risk of the bonding material splashing to both sides is reduced, and the bonding material can be avoided. It flows to the adjacent welding feet, effectively reducing the risk of short circuit caused by the connection of the bonding materials on the adjacent welding feet; the welding feet are covered in the connection structure, and the support parts on both sides can play a certain limiting role, which can effectively reduce the preparation period. The risk of welding point misalignment can effectively ensure the accuracy of the connection between the lead and the welding pin.
  • the dimensions of the two supporting portions of each of the connecting structures are the same.
  • one end of the supporting portion of the connecting structure facing the substrate is in contact with the substrate.
  • a boss structure is provided on a side of the connecting portion facing the welding leg.
  • the connecting portion and the two supporting portions are integral structures.
  • the substrate is a ceramic substrate.
  • the intelligent power module further includes a PCB circuit board, and the other end of each of the leads of the external lead frame is electrically connected to the PCB circuit board.
  • the bonding material includes solder paste, silver paste, or sintered silver.
  • the material of the conductive pins includes copper or aluminum.
  • the present disclosure also provides a method for preparing any one of the intelligent power modules provided by the above technical solutions, including:
  • a bonding material is arranged on the top surface of each welding leg of the substrate
  • connection structures of the leads of the external lead frame are in one-to-one correspondence with the solder pins, and in each group of corresponding connection structures and solder pins, the connection structures of the connection structures
  • the connecting part corresponds to the top surface of the welding leg, the bonding material is located between the connecting part and the welding leg, the two supporting parts of the connecting structure are respectively located on both sides of the welding leg, and the two supporting parts are
  • the arrangement direction is the same as the arrangement direction of the welding feet;
  • Reflow soldering of the bonding material is performed to solder the connection portion and the solder leg.
  • FIG. 1 is a partial structural schematic diagram of the connection and cooperation between a substrate of an intelligent power module and an external lead frame according to an embodiment of the present disclosure
  • FIG. 2 is a schematic top view of a connection structure and a soldering pin that are matched and connected according to an embodiment of the present disclosure
  • Fig. 3 is the cross-sectional structure schematic diagram along the A-A direction in Fig. 2;
  • Fig. 4 is the cross-sectional structure schematic diagram along B-B direction in Fig. 2;
  • Icon 1-substrate; 2-chip; 3-external lead frame; 4-bonding material; 11-conductive pin; 31-lead; 32-connection structure; 111-soldering pin; 321-connection part; 322-support Section; 3211 - Boss Structure.
  • an embodiment of the present disclosure provides an intelligent power module, including: a substrate 1 , a chip 2 is provided on the substrate 1 , and a plurality of conductive electrodes spaced along the periphery of the chip 2 Pins 11, one end of each conductive pin 11 is connected to the chip 2, and the end of the other end forms a soldering pin 111; the outer lead frame 3, the outer lead frame 3 includes a plurality of solder pins 111 one-to-one correspondence
  • the lead wires 31, the end of one end of each lead wire 31 is formed with a connection structure 32 that is configured to be connected with the corresponding soldering pin 111; in each group of mutually corresponding connection structures 32 and soldering pins 111, the connection structure 32 includes:
  • the connection portions 321 corresponding to the top surface of the soldering legs 111 and the supporting portions 322 located on both sides of the connection portions 321 and extending toward the substrate 1 are arranged in the same direction as the soldering legs
  • the above-mentioned intelligent power module includes a substrate 1, and a chip 2 is welded on the substrate 1.
  • the chip can be a full-bridge driver chip, wherein the substrate is used as a carrier of the chip, and the chip is connected to the substrate.
  • 1 is provided with a plurality of conductive pins 11, specifically, the conductive pins can be metal-clad pins, the conductive pins are arranged and distributed in sequence around the outer peripheral side of the chip 2, and adjacent conductive pins are spaced apart from each other.
  • each conductive pin is connected to the electrode metal of chip 2, so as to realize electrical connection between each conductive pin and chip 2, and the end of the other end of each conductive pin forms welding pin 111, then a plurality of The soldering pins 111 are sequentially distributed on the peripheral side of the chip 2, and are arranged at intervals along the peripheral direction of the chip 2. Specifically, a plurality of soldering pins located on the same side of the peripheral side of the chip 2 can be arranged in order and have an arrangement direction. ;
  • the external lead frame 3 includes a plurality of leads 31, which are connected to a plurality of solder pins 111 on the substrate 1 in a one-to-one correspondence.
  • connection structure 32 connected to the soldering pins 111 .
  • the connection structure 32 includes the top surface of the soldering pins 111 away from the substrate 1 .
  • the opposite connecting portion 321 has support portions 322 extending toward the substrate 1 on both sides of the connecting portion 321 , a accommodating space is formed between the two supporting portions 321 on both sides of the connecting portion 321 , and the soldering feet 111 can be located on the two supports.
  • the top surface of the welding leg 111 is opposite to the connecting part 321, wherein the arrangement direction of the two supporting parts 321 is the same as that of the welding leg 111, that is, in the connection structure, referring to FIG. 1,
  • two supporting parts 322 are formed on two sides of the connecting part 321 respectively extending toward the substrate 1 .
  • the two supporting parts 322 and the connecting part 321 form a groove structure, and the grooves
  • the cross-section of the structure is an inverted "U" shape, wherein the two supporting parts 322 respectively form two side walls, and the connecting part 321 forms the bottom wall of the groove structure.
  • the connecting structure 32 is covered on the welding leg 111, the connecting part 321 is opposite to the top surface of the welding leg 111, and the two supporting parts 322 are respectively located on the opposite sides of the welding leg 111; since there are multiple welding legs 111, the leads 31 also have correspondingly more. Therefore, after the plurality of welding legs 111 are assembled and connected with the plurality of connecting structures 32 one-to-one, the connecting structures 32 are covered on the welding legs 111 along the arrangement direction of the welding legs 111 , and the supporting part of the connecting structure 32 322 will be between two adjacent solder pins 111, which can isolate the two adjacent solder pins 111, and the connecting structure 32 covers the bonding material 4 on the top surface of the connection pins.
  • connection structure 32 the support parts 322 on both sides can play a certain limiting role.
  • the connection structure 32 of the lead 31 is connected to the welding pin.
  • the position limit of 111 is stable, which can effectively reduce the risk of dislocation of the welding points caused by vibration and other factors during the preparation process, and effectively ensure the accuracy of the connection between the lead 31 and the welding pin 111 .
  • the support portion 322 of the connection structure 32 of the outer lead frame 3 can isolate the two adjacent soldering pins 111, which reduces the risk of the bonding material 4 splashing to both sides during reflow soldering. And it can prevent the bonding material 4 from flowing to the adjacent welding feet 111, effectively reducing the risk of short circuit caused by the connection of the bonding material 4 on the adjacent welding feet 111; Playing a certain limiting role, it can effectively avoid the risk of dislocation of the welding points during the preparation, and effectively ensure the accuracy of the connection between the leads 31 and the welding pins 111 .
  • the two supporting parts 322 of each connection structure 32 have the same size; 1 contact connection.
  • the two supporting portions 322 have a supporting effect on the connecting portion 321, which can ensure that the connecting portion 321 and the substrate 1 are kept parallel to each other when the external lead frame is assembled with the substrate 1, thereby reducing the risk of adhesive overflow on the heat dissipation surface of the product after plastic sealing.
  • a boss structure 3211 is provided on the side of the connecting portion 321 facing the welding leg 111 . It can prevent the bonding material 4 from being spaced between the connecting portion 321 and the welding leg 111 due to the support portion 322 , and poor bonding occurs in the middle when the bonding material 4 is insufficient, thereby improving the bonding reliability of the welding point between the welding leg 111 and the connecting portion 321 sex.
  • the connecting portion 321 in each connecting structure 32 and the two supporting portions 322 are integral structures.
  • the connecting portion 321 and the two supporting portions 322 have an integral structure, which has good structure and strong stability.
  • the substrate 1 is set as a ceramic substrate, wherein the ceramic substrate is a copper-clad ceramic substrate, which may be a single-sided copper-clad ceramic substrate or a double-sided copper-clad ceramic substrate, and the ceramic substrate has high Thermal conductivity, high electrical insulation, low expansion, high electrical conductivity and excellent solderability.
  • the ceramic substrate is used as the carrier of the chip 2. Due to its low thermal resistance and good heat dissipation, it saves the complicated heat dissipation structure and makes the overall structure simpler. .
  • the intelligent power module further includes a PCB circuit board, and the other end of each lead 31 of the external lead frame 3 is electrically connected to the PCB circuit board, and the external lead frame 3 connects the substrate to the PCB circuit board. 1
  • the chip 2 is assembled with the PCB board, and the combination is firm.
  • the bonding material 4 includes solder paste, silver paste or sintered silver.
  • the material of the conductive pins includes copper or other wire materials, which is not limited in this embodiment.
  • the present disclosure also provides a method for preparing any one of the smart power modules provided in the foregoing embodiments, including:
  • a bonding material 4 is arranged on the top surface of each soldering leg 111 of the substrate 1; specifically, the bonding material 4 can be solder paste, silver paste or sintered silver, and at normal temperature, it can be arranged on the solder paste by printing the top surface of foot 111;
  • connection structures 32 of the leads 31 of the outer lead frame 3 correspond to the soldering pins 111 one-to-one.
  • the connecting portion 321 of the connecting structure 32 corresponds to the top surface of the welding leg 111
  • the bonding material 4 is located between the connecting portion 321 and the welding leg 111
  • the two supporting portions 322 of the connecting structure 32 are respectively located on both sides of the welding leg 111
  • the arrangement direction of the two support parts is the same as the arrangement direction of the welding feet;
  • the reflow soldering of the bonding material 4 is performed, specifically, after the external lead frame is assembled with the substrate 1, the bonding material 4 is subjected to high temperature treatment, and the bonding material 4 forms a liquid state at a high temperature, so as to be connected to the connecting portion 321 and the soldering pins 111, Then, the temperature is lowered and cooled, and the bonding material 4 becomes solid, and the connecting portion 321 and the welding leg 111 are welded.

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  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Manufacturing & Machinery (AREA)
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  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

本公开涉及电子器件技术领域，公开了一种智能功率模块及其制备方法，智能功率模块包括基板，基板上设有芯片、多个导电引脚，导电引脚的一端与芯片连接，另一端的端部形成焊接脚；外部引脚框架，外部引脚框架包括多个与多个焊接脚一一对应的引线，引线的一端的端部形成有连接结构；每组相互对应的连接结构和焊接脚中，连接结构包括：连接部、以及位于分别连接部两侧并朝向基板延伸的支撑部，支撑部的排列方向与焊接脚的排列方向相同，两个支撑部之间形成容纳空间，焊接脚位于两个支撑部之间。该智能功率模块中，支撑部隔绝相邻的两个焊接脚，回流焊时，降低相邻焊接脚上的结合材相连而导致短路风险；支撑部起到限位作用，降低焊接点错位风险。

Description

一种智能功率模块及其制备方法
本公开要求于2021年02月25日提交中国专利局、申请号为202110212995.8、发明名称为“一种智能功率模块及其制备方法”的中国专利申请的优先权，其全部内容通过引用结合在本公开中。
技术领域
本公开涉及电子器件技术领域，特别涉及一种智能功率模块及其制备方法。
背景技术
智能功率模块(IPM)不仅把功率开关器件和驱动电路集成在一起，而且还内藏有过电压，过电流和过热等故障检测电路，使用起来方便，不仅减少了系统的体积，也增强了系统的可靠性，赢得越来越大的市场，尤其适合于驱动电机的变频器和各种逆变电源，是变频调速，冶金机械，电力牵引，伺服驱动，变频家电的一种非常理想的电力电子器件。
在智能功率模块中，为提高模块散热能力，使用DBC陶瓷基板当芯片载体将是趋势；芯片焊接在基板上，基板上设置有多个与芯片电连接的引脚，引脚可以通过中间框架与其它部件电连接，以实现芯片与其它部件电连接，但是由于基板上引脚密度较高，结合面积有限，中间框架与基板上的引脚的结合结构可靠性差，还容易引起相邻的引脚相连导致短路等风险，因此，如何解决中间框架与基板上的引脚可靠的结合是目前亟待解决的问题。
发明内容
本公开公开了一种智能功率模块及其制备方法，上述智能功率模块中，外部引脚框架的连接结构的支撑部可以隔绝相邻的两个焊接脚，在回流焊时，降低了结合材向两侧溅出的风险，且可以避免结合材流向相邻的焊接脚，有效降 低相邻的焊接脚上的结合材相连而导致短路风险；焊接脚被罩在连接结构中，两边的支撑部可以起到一定的限位作用，可以有效避免制备期间焊接点错位风险，有效保证引线与焊接脚的连接准确性。
为达到上述目的，本公开提供以下技术方案：
一种智能功率模块，包括：
基板，所述基板上设有芯片、以及沿所述芯片的周侧间隔分布的多个导电引脚，每个所述导电引脚的一端与所述芯片连接，另一端的端部形成焊接脚；
外部引脚框架，所述外部引脚框架包括多个与所述多个焊接脚一一对应的引线，每个引线的一端的端部形成有被设置为与对应的焊接脚连接的连接结构；每组相互对应的连接结构和焊接脚中，所述连接结构包括：与所述焊接脚的顶面对应设置的连接部、以及位于分别所述连接部两侧并朝向所述基板延伸的支撑部，所述支撑部的排列方向与所述焊接脚的排列方向相同，两个所述支撑部之间形成容纳空间，所述焊接脚位于两个所述支撑部之间；
结合材，所述结合材设于所述焊接脚的顶面，且所述结合材位于所述焊接脚与所述连接部之间，所述焊接脚与所述连接部通过所述结合材连接。
上述智能功率模块中，包括有基板，在基板上焊接有芯片，在基板上设置有多个导电引脚，导电引脚围绕芯片的外周侧依次间隔排列分布，相邻的导电引脚之间具有间隔且彼此绝缘设置，每个导电引脚的一端与芯片的电极金属连接，以实现每个导电引脚与芯片电连接，每个导电引脚的另一端的端部形成焊接脚，则多个焊接脚会依次分布在芯片的周侧，且沿着芯片的周向间隔排列，具体地，位于芯片周侧中的同一侧多个焊接脚可以整齐的依次排列，具有一个排列方向；外部引脚框架包括多个引线，引线为导电引线，该多个引线与基板上的多个焊接脚一一对应连接，具体地，在相互对应的引线与焊接脚中，每个引线的一端的端部形成与焊接脚连接的连接结构，具体地，每一组相互对应的连接结构与焊接脚中，连接结构包括与焊接脚中背离基板的顶面相对的连接部，在连接部的两侧具有向基板方向延伸的支撑部，在连接部两侧的两个支撑部之 间形成容纳空间，焊接脚可以位于两个支撑部的容纳空间内，焊接脚的顶面与连接部相对，其中，两个支撑部的排列方向与焊接脚的排列方向相同，也就是，在连接结构中，在连接部的两个侧边分别朝向基板的方向延伸形成两个支撑部，两个支撑部与连接部形成一个凹槽结构，且凹槽结构的截面为倒“U”型，其中，两个支撑部分别形成两个侧壁，连接部形成凹槽结构的底壁，对于连接结构与焊接脚的配合，相当于连接结构罩在焊接脚上，连接部与焊接脚的顶面相对，两个支撑部分别位于焊接脚的相对的两侧，由于焊接脚有多个，引线也有对应的多个，所以，多个焊接脚分别与多个连接结构一对一的配合组装连接后，沿着焊接脚的排列方向，连接结构罩在焊接脚上，连接结构的支撑部会在相邻的两个焊接脚之间，可以将两个相邻的焊接脚隔绝，且连接结构将结合材罩在连接脚的顶面，当进行会回流焊时，可以有效避免结合材向两侧溅出，降低了结合材向两侧溅出的风险，且可以避免结合材流向相邻的焊接脚，可以再结合材过多时避免相邻的焊接脚上的结合材相连，有效降低相邻的焊接脚上的结合材相连而导致短路风险；焊接脚被罩在连接结构中，两边的支撑部可以起到一定的限位作用，在制备过程中，当外部引脚框架与基板组装但还未固定时，引线的连接结构与焊接脚限位稳定，可以有效降低制备期间由于震动等因素引起的焊接点错位风险，有效保证引线与焊接脚的连接准确性。
因此，上述智能功率模块中，外部引脚框架的连接结构的支撑部可以隔绝相邻的两个焊接脚，在回流焊时，降低了结合材向两侧溅出的风险，且可以避免结合材流向相邻的焊接脚，有效降低相邻的焊接脚上的结合材相连而导致短路风险；焊接脚被罩在连接结构中，两边的支撑部可以起到一定的限位作用，可以有效降低制备期间焊接点错位风险，有效保证引线与焊接脚的连接准确性。
在一些实施方式中，沿垂直于所述基板的方向，每个所述连接结构的两个所述支撑部的尺寸相同。
在一些实施方式中，每个所述连接结构中，所述连接结构的支撑部朝向所述基板的一端与所述基板接触连接。
在一些实施方式中，所述连接部朝向所述焊接脚的一侧设置有凸台结构。
在一些实施方式中，所述连接部与所述两个支撑部为一体式结构。
在一些实施方式中，所述基板为陶瓷基板。
在一些实施方式中，所述智能功率模块还包括PCB电路板，所述外部引脚框架的每个所述引线的另一端与所述PCB电路板电连接。
在一些实施方式中，所述结合材包括锡膏、银浆或烧结银。
在一些实施方式中，所述导电引脚的材料包括铜或铝。
本公开还提供了一种如上述技术方案提供的任意一种智能功率模块的制备方法，包括：
在基板的每个焊接脚的顶面上设置结合材；
通过载具将外部引脚框架与基板组装，其中，所述外部引脚框架的引线的连接结构与焊接脚一一对应，在每组相对应的连接结构和焊接脚中，所述连接结构的连接部与所述焊接脚的顶面对应，所述结合材位于连接部与焊接脚之间，所述连接结构的两个支撑部分别位于焊接脚的两侧，且两个所述支撑部的排列方向与所述焊接脚的排列方向相同；
进行结合材回流焊，以使所述连接部与所述焊接脚焊接。
附图说明
图1为本公开实施例提供的一种智能功率模块的基板与外部引脚框架连接配合的局部结构示意图；
图2为本公开实施例提供的一种连接结构与焊接脚配合连接的俯视示意图；
图3为图2中沿A-A向的截面结构示意图；
图4为图2中沿B-B向的截面结构示意图；
图标：1-基板；2-芯片；3-外部引脚框架；4-结合材；11-导电引脚；31-引线；32-连接结构；111-焊接脚；321-连接部；322-支撑部；3211-凸台结构。
具体实施方式
下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本公开保护的范围。
如图1、图2和图3所示，本公开实施例提供了一种智能功率模块，包括：基板1，基板1上设有芯片2、以及沿芯片2的周侧间隔分布的多个导电引脚11，每个导电引脚11的一端与芯片2连接，另一端的端部形成焊接脚111；外部引脚框架3，外部引脚框架3包括多个与多个焊接脚111一一对应的引线31，每个引线31的一端的端部形成有被设置为与对应的焊接脚111连接的连接结构32；每组相互对应的连接结构32和焊接脚111中，连接结构32包括：与焊接脚111的顶面对应设置的连接部321、以及位于分别连接部321两侧并朝向基板1延伸的支撑部322，支撑部322的排列方向与焊接脚111的排列方向相同，两个支撑部322之间形成容纳空间，焊接脚111位于两个支撑部322之间。
上述智能功率模块中，包括有基板1，在基板1上焊接有芯片2，具体地，该芯片可以为全桥驱动芯片，其中，基板作为芯片的载体，芯片连接在基板上，其中，在基板1上设置有多个导电引脚11，具体地，导电引脚可以为覆金属引脚，导电引脚围绕芯片2的外周侧依次间隔排列分布，相邻的导电引脚之间具有间隔且彼此绝缘设置，每个导电引脚的一端与芯片2的电极金属连接，以实现每个导电引脚与芯片2电连接，每个导电引脚的另一端的端部形成焊接脚111，则多个焊接脚111会依次分布在芯片2的周侧，且沿着芯片2的周向间隔排列，具体地，位于芯片2周侧中的同一侧多个焊接脚可以整齐的依次排列，具有一个排列方向；外部引脚框架3包括多个引线31，该多个引线31与基板1上的多个焊接脚111一一对应连接，具体地，在相互对应的引线31与焊接脚111中，每个引线31的一端的端部形成与焊接脚111连接的连接结构32，具体地，每一组相互对应的连接结构32与焊接脚111中，连接结构32包括与焊接脚111 中背离基板1的顶面相对的连接部321，在连接部321的两侧具有向基板1方向延伸的支撑部322，在连接部321两侧的两个支撑部321之间形成容纳空间，焊接脚111可以位于两个支撑部321的容纳空间内，焊接脚111的顶面与连接部321相对，其中，两个支撑部321的排列方向与焊接脚111的排列方向相同，也就是，在连接结构中，参考图1，如图2和图3所示，在连接部321的两个侧边分别朝向基板1的方向延伸形成两个支撑部322，两个支撑部322与连接部321形成一个凹槽结构，且凹槽结构的截面为倒“U”型，其中，两个支撑部322分别形成两个侧壁，连接部321形成凹槽结构的底壁，对于连接结构32与焊接脚111的配合，相当于连接结构32罩在焊接脚111上，连接部321与焊接脚111的顶面相对，两个支撑部322分别位于焊接脚111的相对的两侧；由于焊接脚111有多个，引线31也有对应的多个，所以，多个焊接脚111分别与多个连接结构32一对一的配合组装连接后，沿着焊接脚111的排列方向，连接结构32罩在焊接脚111上，连接结构32的支撑部322会在相邻的两个焊接脚111之间，可以将两个相邻的焊接脚111隔绝，且连接结构32将结合材4罩在连接脚的顶面，当进行会回流焊时，可以有效避免结合材4向两侧溅出，降低了结合材4向两侧溅出的风险，且可以避免结合材4流向相邻的焊接脚111，可以再结合材4过多时避免相邻的焊接脚111上的结合材4相连，有效降低相邻的焊接脚111上的结合材4相连而导致的短路风险；焊接脚111被罩在连接结构32中，两边的支撑部322可以起到一定的限位作用，在制备过程中，当外部引脚框架3与基板1组装但还未固定时，引线31的连接结构32与焊接脚111限位稳定，可以有效降低制备期间由于震动等因素引起的焊接点错位风险，有效保证引线31与焊接脚111的连接准确性。
因此，上述智能功率模块中，外部引脚框架3的连接结构32的支撑部322可以隔绝相邻的两个焊接脚111，在回流焊时，降低了结合材4向两侧溅出的风险，且可以避免结合材4流向相邻的焊接脚111，有效降低相邻的焊接脚111上的结合材4相连而导致的短路风险；焊接脚111被罩在连接结构32中，两 边的支撑部322可以起到一定的限位作用，可以有效避免制备期间焊接点错位风险，有效保证引线31与焊接脚111的连接准确性。
在一些实施方式中，上述智能功率模块中，沿垂直于基板1的方向，每个连接结构32的两个支撑部322的尺寸相同；并且连接结构32的支撑部322朝向基板1的一端与基板1接触连接。两个支撑部322对连接部321具有支撑作用，可以保证外部引脚框架与基板1组装时保持连接部321与基板1相互平行，降低塑封后产品散热面溢胶风险。
在一些实施方式中，如图3和图4所示，上述智能功率模块中，连接部321朝向焊接脚111的一侧设置有凸台结构3211。可以防止由于支撑部322使连接部321与焊接脚111之间具有间隔容纳结合材4，而结合材4不足时中间出现结合不良，提高焊接脚111与连接部321之间的焊接点的结合可靠性。
在一些实施方式中，上述智能功率模块中，每个连接结构32中的连接部321与两个支撑部322为一体式结构。连接部321与两个支撑部322具有一体式结构，结构性好，稳定性较强。
在其中一个实施例中，上述智能功率模块中，基板1设置为陶瓷基板，其中，陶瓷基板为覆铜陶瓷基板，可以为单面覆铜陶瓷基板或者双面覆铜陶瓷基板，陶瓷基板具有高导热、高电绝缘、低膨胀、高导电性和优异焊接性，陶瓷基板作为芯片2的载体，由于其热阻低、散热性好等特性，节省了繁杂的散热结构，使的整体结构更加简单。
在其中一个实施例中，上述智能功率模块中，智能功率模块还包括PCB电路板，外部引脚框架3的每个引线31的另一端与PCB电路板电连接，通过外部引脚框架3将基板1芯片2与PCB板组装，结合稳固。
在其中一个实施例中，上述智能功率模块中，结合材4包括锡膏、银浆或烧结银。
在其中一个实施例中，上述智能功率模块中，导电引脚的材料包括铜，或者其它导线材料，本实施例不做局限。
参考图1至图4所示，本公开还提供了一种如上述实施例中提供的任意一种智能功率模块的制备方法，包括：
首先，在基板1的每个焊接脚111的顶面上设置结合材4；具体地，结合材4可以为锡膏、银浆或烧结银，且在常温下，可以通过印刷的方式设置在焊接脚111的顶面上；
然后，通过载具将外部引脚框架与基板1组装，其中，外部引脚框架3的引线31的连接结构32与焊接脚111一一对应，在每组相对应的连接结构和焊接脚中，连接结构32的连接部321与焊接脚111的顶面对应，结合材4位于连接部321与焊接脚111之间，连接结构32的两个支撑部322分别位于焊接脚111的两侧，且两个支撑部的排列方向与焊接脚的排列方向相同；
最后，进行结合材4回流焊，以使连接部321与焊接脚111焊接。
其中，进行结合材4回流焊，具体为，在外部引脚框架与基板1组装之后，对结合材4进行高温处理，高温下结合材4形成液态，从而与连接部321和焊接脚111连接，然后再降温冷却，结合材4成为固态，则将连接部321与焊接脚111焊接。
显然，本领域的技术人员可以对本公开实施例进行各种改动和变型而不脱离本公开的精神和范围。这样，倘若本公开的这些修改和变型属于本公开权利要求及其等同技术的范围之内，则本公开也意图包含这些改动和变型在内。

Claims (10)

  1. 一种智能功率模块，包括：
    基板，所述基板上设置有芯片、以及沿所述芯片的周侧间隔分布的多个导电引脚，每个所述导电引脚的一端与所述芯片连接，另一端的端部形成焊接脚；
    外部引脚框架，所述外部引脚框架包括多个与所述多个焊接脚一一对应的引线，每个引线的一端的端部形成有被设置为与对应的焊接脚连接的连接结构；每组相互对应的连接结构和焊接脚中，所述连接结构包括：与所述焊接脚的顶面对应设置的连接部、以及位于分别所述连接部两侧并朝向所述基板延伸的支撑部，所述支撑部的排列方向与所述焊接脚的排列方向相同，两个所述支撑部之间形成容纳空间，所述焊接脚位于两个所述支撑部之间；
    结合材，所述结合材设于所述焊接脚的顶面，且所述结合材位于所述焊接脚与所述连接部之间，所述焊接脚与所述连接部通过所述结合材连接。
  2. 根据权利要求1所述的智能功率模块，其中，沿垂直于所述基板的方向，每个所述连接结构的两个所述支撑部的尺寸相同。
  3. 根据权利要求1或2所述的智能功率模块，其中，每个所述连接结构中，所述连接结构的支撑部朝向所述基板的一端与所述基板接触连接。
  4. 根据权利要求1所述的智能功率模块，其中，所述连接部朝向所述焊接脚的一侧设置有凸台结构。
  5. 根据权利要求1所述的智能功率模块，其中，所述连接部与所述两个支撑部为一体式结构。
  6. 根据权利要求1所述的智能功率模块，其中，所述基板为陶瓷基板。
  7. 根据权利要求1所述的智能功率模块，其中，还包括PCB电路板，所述外部引脚框架的每个所述引线的另一端与所述PCB电路板电连接。
  8. 根据权利要求1所述的智能功率模块，其中，所述结合材包括锡膏、银浆或烧结银。
  9. 根据权利要求1所述的智能功率模块，其中，所述导电引脚的材料包 括铜或铝。
  10. 一种如权利要求1-9任一项所述的智能功率模块的制备方法，包括：
    在基板的每个焊接脚的顶面上设置结合材；
    通过载具将外部引脚框架与基板组装，其中，所述外部引脚框架的引线的连接结构与焊接脚一一对应，在每组相对应的连接结构和焊接脚中，所述连接结构的连接部与所述焊接脚的顶面对应，所述结合材位于连接部与焊接脚之间，所述连接结构的两个支撑部分别位于焊接脚的两侧，且两个所述支撑部的排列方向与所述焊接脚的排列方向相同；
    进行结合材回流焊，以使所述连接部与所述焊接脚焊接。
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