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JP5212417B2 - パワー半導体モジュール - Google Patents

パワー半導体モジュール Download PDF

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Publication number
JP5212417B2
JP5212417B2 JP2010091291A JP2010091291A JP5212417B2 JP 5212417 B2 JP5212417 B2 JP 5212417B2 JP 2010091291 A JP2010091291 A JP 2010091291A JP 2010091291 A JP2010091291 A JP 2010091291A JP 5212417 B2 JP5212417 B2 JP 5212417B2
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JP
Japan
Prior art keywords
insulating substrate
dielectric constant
solder
low dielectric
semiconductor chip
Prior art date
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JP2010091291A
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English (en)
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JP2011222805A (ja
JP2011222805A5 (ja
Inventor
安人 川口
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2010091291A priority Critical patent/JP5212417B2/ja
Priority to US12/910,231 priority patent/US8558361B2/en
Priority to DE102011005690.4A priority patent/DE102011005690B4/de
Priority to CN2011100736492A priority patent/CN102214622B/zh
Publication of JP2011222805A publication Critical patent/JP2011222805A/ja
Publication of JP2011222805A5 publication Critical patent/JP2011222805A5/ja
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Publication of JP5212417B2 publication Critical patent/JP5212417B2/ja
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Description

本発明は、両面電極付絶縁基板を備えるパワー半導体モジュールに関し、特に絶縁不良を低減することができるパワー半導体モジュールに関する。
近年、モータなどの電気機器を制御する電力変換装置などにパワー半導体モジュールが用いられている。パワー半導体モジュールでは、放熱板上に半田により両面電極付絶縁基板が接合され、絶縁基板上に半田により半導体チップが接合されている。そして、ケースが絶縁基板及び半導体チップを内包し、ケース内にシリコーンゲルが充填されている（例えば、特許文献１参照）。
特開２００２−７６１９０号公報
モジュール周辺や通電時の温度変化により、半田からシリコーンゲル中に気泡が発生する場合がある。この気泡により絶縁不良が発生する場合がある。特に両面電極付絶縁基板の周辺の気泡は、絶縁不良に直結する。
本発明は、上述のような課題を解決するためになされたもので、その目的は絶縁不良を低減することができるパワー半導体モジュールを得るものである。
本発明は、放熱板と、上面電極と下面電極を有し、前記下面電極が第１の半田を介して前記放熱板に接合された絶縁基板と、前記上面電極上に第２の半田を介して接合された半導体チップと、前記第１の半田と前記下面電極の側面を覆う第１の低誘電率膜と、前記第２の半田と前記半導体チップの側面を覆う第２の低誘電率膜と、前記放熱板上に設けられ、前記絶縁基板及び前記半導体チップを囲うケースと、前記ケース内に充填され、前記絶縁基板、前記半導体チップ、及び前記第１及び第２の低誘電率膜を覆うシリコーンゲルとを有し、前記低誘電率膜は、シリコーンゴム、ポリイミド、及びエポキシ樹脂の何れかであり、前記第１の低誘電率膜は、前記絶縁基板より下側において、前記放熱板の上面全面を覆っており、前記絶縁基板は、下面の外周部から下方に突出した凸部を更に有することを特徴とするパワー半導体モジュールである。
本発明により、絶縁不良を低減することができる。
実施の形態１に係るパワー半導体モジュールを示す断面図である。 実施の形態１に係るパワー半導体モジュールを示す上面図である。 図２に示すパワー半導体モジュールにおける１つの回路ブロックの等価回路である。 実施の形態１に係るパワー半導体モジュールを示す拡大断面図である。 実施の形態２に係るパワー半導体モジュールを示す拡大断面図である。 実施の形態３に係るパワー半導体モジュールを示す拡大断面図である。 実施の形態４に係るパワー半導体モジュールを示す拡大断面図である。 実施の形態５に係るパワー半導体モジュールを示す拡大断面図である。
本発明の実施の形態に係るパワー半導体モジュールについて図面を参照して説明する。同じ構成要素には同じ符号を付し、説明の繰り返しを省略する場合がある。
実施の形態１．
図１は、実施の形態１に係るパワー半導体モジュールを示す断面図であり、図２はその上面図である。このパワー半導体モジュールは、複数の絶縁ゲート型バイポーラトランジスタ（ＩＧＢＴ）を並列接続し、共通のコレクタ端子、エミッタ端子、ゲート端子を備えることで高耐圧・大電流特性を得るように構成された回路ブロックを複数内蔵している。図３は、図２に示すパワー半導体モジュールにおける１つの回路ブロックの等価回路である。
金属製の放熱板１上に、駆動回路基板２、パワー半導体回路基板３、及び中継回路基板４が取り付けられている。これらの回路基板は、セラミックスなどの絶縁基板の両面に銅又はアルミ等からなる導電パターンが設けられたものである。パワー半導体回路基板３上にＩＧＢＴ５及びフリーホイールダイオード６が接合されている。駆動回路基板２上にチップ抵抗７が接合されている。
ＩＧＢＴ５のエミッタ及びフリーホイールダイオード６のアノードは、Ａｌワイヤ８により中継回路基板の導電パターンに接続されている。ＩＧＢＴ５のゲートは、Ａｌワイヤ８により駆動回路基板２の導電パターンに接続されている。ＩＧＢＴ５のコレクタとフリーホイールダイオード６のカソードは、パワー半導体回路基板３の導電パターンを介して互いに接続されている。
駆動回路基板２、パワー半導体回路基板３及び中継回路基板４を囲うように放熱板１上に樹脂性のケース９が設けられ、ケース９の上部にふた１０が配置されている。ケース９内には、気密性と絶縁を保つためシリコーンゲル１１が充填されている。それぞれの回路基板は電極端子接合領域１２を備える。この電極端子接合領域１２には、図示していないが、装置外部との電気的接続を実現する電極端子が取り付けられている。ここではパワー半導体回路基板３と中継回路基板４を異なる絶縁基板に分離しているが、同じ１つの絶縁基板上に導電パターンの形成領域を分けて両者を構成してもよい。
図４は、実施の形態１に係るパワー半導体モジュールを示す拡大断面図である。絶縁基板１３は上面電極１４と下面電極１５を有する。絶縁基板１３の下面電極１５は、半田１６を介して放熱板１に接合されている。絶縁基板１３の上面電極１４上に半田１７を介してＳｉ製の半導体チップ１８が接合されている。半導体チップ１８にＡｌワイヤ８がボンディングされている。なお、絶縁基板１３は図１ないし図３のパワー半導体回路基板３に相当し、半導体チップ１８は図１ないし図３のＩＧＢＴ５又はフリーホイールダイオード６に相当する。
低誘電率膜１９が半田１６と下面電極１５の側面を覆っている。低誘電率膜２０が半田１７と半導体チップ１８の側面を覆っている。低誘電率膜１９，２０は、シリコーンゴム、ポリイミド、及びエポキシ樹脂の何れかである。特に、低誘電率膜１９，２０としてシリコーンゴムを用いればアセンブリが容易となり、ポリイミドを用いれば耐熱性が向上し、エポキシ樹脂を用いればヒートサイクル性が向上する。ケース９内に充填されたシリコーンゲル１１（柔軟絶縁物）が、絶縁基板１３、半導体チップ１８、及び低誘電率膜１９，２０を覆っている。
以上説明したように、本実施の形態では、低誘電率膜１９が半田１６と下面電極１５の側面を覆い、低誘電率膜２０が半田１７と半導体チップ１８の側面を覆っている。これにより、半田１７からの気泡発生を抑制することができる。よって、絶縁不良を低減することができ、製品の長寿命化が可能となる。
実施の形態２．
図５は、実施の形態２に係るパワー半導体モジュールを示す拡大断面図である。低誘電率膜１９は、絶縁基板１３より下側において、放熱板１の上面全面を覆っている。その他の構成は実施の形態１と同様である。これにより、半田１６からの気泡発生を実施の形態１よりも確実に抑制することができる。
実施の形態３．
図６は、実施の形態３に係るパワー半導体モジュールを示す拡大断面図である。低誘電率膜１９は設けられていないが、絶縁基板１３は下面の外周部から下方に突出した凸部２１を更に有する。その他の構成は実施の形態１と同様である。これにより、半田１６から発生した気泡は、凸部２１により絶縁基板１３の下面側に停留する。従って、絶縁不良を低減することができる。
実施の形態４．
図７は、実施の形態４に係るパワー半導体モジュールを示す拡大断面図である。ケース９の内壁に仕切り２２が設けられている。この仕切り２２は、放熱板１とケース９との接合部２３と絶縁基板１３の上面との間に配置されている。その他の構成は実施の形態１と同様である。
接合部２３から発生する気泡は、仕切り２２によりケース９側に停留し、絶縁基板１３の上面には移動しない。従って、絶縁不良を更に低減することができる。
接合部２３から絶縁基板１３の上面までの距離は、半田１６，１７から絶縁基板１３の上面までの距離に比べて長い。従って、接合部２３から発生する気泡が絶縁不良を招く可能性は低い。ただし、更に高い信頼性が求められる場合に本実施の形態は有効である。
なお、実施の形態４の構成は、実施の形態１に対してだけではなく、実施の形態２又は３にも適用できる。
実施の形態５．
図８は、実施の形態５に係るパワー半導体モジュールを示す拡大断面図である。実施の形態１ないし４では、シリコーンゲル１１はＡｌワイヤ８を全て覆っていた。これに対し、実施の形態５では、シリコーンゲル１１の高さを半導体チップ１８の上面から数ｍｍ程度までにする。これにより、Ａｌワイヤ８の一部はシリコーンゲル１１から露出する。その他の構成は実施の形態１と同様である。
仮に低誘電率膜１９，２０の形成不良等により半田１６，１７から気泡が発生しても、その気泡はシリコーンゲル１１の上面に容易に達することができ、気中に放出される。従って、絶縁不良を更に低減することができる。
なお、実施の形態５の構成は、実施の形態１に対してだけではなく、実施の形態２ないし４の何れかにも適用できる。
１ 放熱板
８ Ａｌワイヤ（ワイヤ）
９ ケース
１１ シリコーンゲル（絶縁物）
１３ 絶縁基板
１４ 上面電極
１５ 下面電極
１６ 半田（第１の半田）
１７ 半田（第２の半田）
１８ 半導体チップ
１９ 低誘電率膜（第１の低誘電率膜）
２０ 低誘電率膜（第２の低誘電率膜）
２１ 凸部
２２ 仕切り
２３ 接合部

Claims (3)

  1. 放熱板と、
    上面電極と下面電極を有し、前記下面電極が第１の半田を介して前記放熱板に接合された絶縁基板と、
    前記上面電極上に第２の半田を介して接合された半導体チップと、
    前記第１の半田と前記下面電極の側面を覆う第１の低誘電率膜と、
    前記第２の半田と前記半導体チップの側面を覆う第２の低誘電率膜と、
    前記放熱板上に設けられ、前記絶縁基板及び前記半導体チップを囲うケースと、
    前記ケース内に充填され、前記絶縁基板、前記半導体チップ、及び前記第１及び第２の低誘電率膜を覆うシリコーンゲルとを有し、
    前記低誘電率膜は、シリコーンゴム、ポリイミド、及びエポキシ樹脂の何れかであり、
    前記第１の低誘電率膜は、前記絶縁基板より下側において、前記放熱板の上面全面を覆っており、
    前記絶縁基板は、下面の外周部から下方に突出した凸部を更に有することを特徴とするパワー半導体モジュール。
  2. 放熱板と、
    上面電極と下面電極を有し、前記下面電極が第１の半田を介して前記放熱板に接合された絶縁基板と、
    前記上面電極上に第２の半田を介して接合された半導体チップと、
    前記第１の半田と前記下面電極の側面を覆う第１の低誘電率膜と、
    前記第２の半田と前記半導体チップの側面を覆う第２の低誘電率膜と、
    前記放熱板上に設けられ、前記絶縁基板及び前記半導体チップを囲うケースと、
    前記ケース内に充填され、前記絶縁基板、前記半導体チップ、及び前記第１及び第２の低誘電率膜を覆うシリコーンゲルと、
    前記放熱板と前記ケースとの接合部と前記絶縁基板の上面との間に配置された仕切りとを有し、
    前記低誘電率膜は、シリコーンゴム、ポリイミド、及びエポキシ樹脂の何れかであり、
    前記第１の低誘電率膜は、前記絶縁基板より下側において、前記放熱板の上面全面を覆っていることを特徴とするパワー半導体モジュール。
  3. 前記半導体チップにボンディングされたワイヤを更に備え、
    前記ワイヤの一部は、前記シリコーンゲルから露出していることを特徴とする請求項１又は２に記載のパワー半導体モジュール。
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US20110249407A1 (en) 2011-10-13
CN102214622B (zh) 2013-09-18
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