WO2011105330A1 - 発光装置およびその製造方法 - Google Patents
発光装置およびその製造方法 Download PDFInfo
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- WO2011105330A1 WO2011105330A1 PCT/JP2011/053693 JP2011053693W WO2011105330A1 WO 2011105330 A1 WO2011105330 A1 WO 2011105330A1 JP 2011053693 W JP2011053693 W JP 2011053693W WO 2011105330 A1 WO2011105330 A1 WO 2011105330A1
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- 125000005504 styryl group Chemical group 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/18—Carrier blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
Definitions
- the present invention relates to a light emitting device and a manufacturing method thereof.
- organic electroluminescent element hereinafter referred to as an organic EL element
- This display device includes a plurality of organic EL elements arranged on a substrate.
- partition walls for separating the organic EL elements are arranged in a lattice shape or a stripe shape.
- Each organic EL element is provided in a region divided by a substrate and a partition wall.
- each of the plurality of organic EL elements is arranged between each of the plurality of partition walls (sometimes referred to as a recess).
- the plurality of organic EL elements are arranged at predetermined intervals along the extending direction of the partition walls. In other words, the plurality of organic EL elements are arranged in a matrix. For example, when a grid-like partition is provided on the support substrate, each organic EL element is arranged in a region divided into a substantially rectangular shape by the grid-like partition.
- FIG. 3 is a diagram schematically illustrating a light emitting device including a plurality of organic EL elements.
- the organic EL element includes a pair of electrodes and a plurality of predetermined layers provided between the electrodes.
- the organic EL element includes at least one light emitting layer as a predetermined layer.
- the anode 2, the hole injection layer 3, the hole transport layer 4, the light emitting layer 5, and the cathode 6 are closer to the support substrate 1, and the anode 2 is closer to the support substrate 1.
- the layers are stacked in this order.
- the aforementioned predetermined layer can be formed by a coating method.
- the hole injection layer 3 can be formed by supplying ink containing a material to be the hole injection layer to a region (concave portion) divided by the partition wall 7 and further solidifying it.
- the supplied ink may be solidified while being wet spread on the side face of the partition wall 7. That is, as shown in FIG. 3, a rising portion 3 a that rises in the direction away from the support substrate 1 along the side surface of the partition wall 7 is formed on the outer peripheral edge portion of the hole injection layer 3 provided in the recess.
- the hole transport layer 4 the light emitting layer 5, and the cathode 6 are sequentially formed on the hole injection layer 3 having such a rising portion 3a, the rising portion 3a and the cathode 6 are physically connected.
- the rising portion 3a and the cathode 6 are physically connected.
- the material that is currently widely used as the hole injection layer 3 has a relatively low electrical resistance. Therefore, if the scooping portion 3a and the cathode 6 are physically connected, the cathode 6 and the anode 2 are electrically connected via the scooping portion 3a, resulting in a leakage current.
- a countermeasure for preventing the occurrence of such a leakage current has been studied (for example, see Patent Document 1). However, this countermeasure is not always practical, and its improvement is desired.
- an object of the present invention is to provide a light-emitting device including an organic EL element that can prevent the occurrence of leakage current.
- a light-emitting device comprising a support substrate, a partition wall that partitions the plurality of organic electroluminescence elements on the support substrate, and a plurality of organic electroluminescence elements provided in a recess between the partition walls,
- Each organic electroluminescence element includes a first electrode, a first resistance layer, a second resistance layer having a higher electrical resistance than the first resistance layer, a light emitting layer, and a second electrode.
- the first resistance layer has a rising portion that rises in a direction away from the support substrate along the surface of the partition;
- the second resistance layer is a light-emitting device that is continuously provided so as to extend from one organic electroluminescent element adjacent to another organic electroluminescent element with a partition interposed therebetween.
- a light emitting device including a support substrate, a partition wall that partitions the plurality of organic electroluminescence elements on the support substrate, and a plurality of organic electroluminescence elements provided in a recess between the partition walls, and the organic electroluminescence
- the element includes a first electrode, a first resistance layer, a second resistance layer having a higher electrical resistance than the first resistance layer, a light emitting layer, and a second electrode.
- FIG. 1 is a cross-sectional view schematically showing a light emitting device.
- FIG. 2 is a plan view schematically showing the light emitting device.
- FIG. 3 is a cross-sectional view schematically showing a conventional light emitting device.
- a light-emitting device includes a support substrate, a partition that partitions the plurality of organic EL elements on the support substrate, and a plurality of organic EL elements that are provided in recesses between the partition walls,
- the organic EL element includes a first electrode, a first resistance layer, a second resistance layer having a higher electrical resistance than the first resistance layer, a light emitting layer, and a second electrode.
- the first resistance layer has a scooping portion that crawls up in a direction away from the support substrate along the surface of the partition wall, and has a second resistance.
- the layer is a light emitting device that is continuously provided so as to extend from one adjacent organic EL element to the other organic EL element with a partition interposed therebetween.
- the light emitting device is used as a display device, for example.
- an active matrix drive type device and a passive matrix drive type device.
- the present invention can be applied to both types of display devices, in this embodiment, a light emitting device applied to an active matrix drive type display device will be described as an example.
- FIG. 1 is a cross-sectional view schematically showing a light emitting device.
- FIG. 2 is a plan view schematically showing the light emitting device.
- the light emitting device 21 mainly includes a support substrate 11, a plurality of organic EL elements 22 formed on the support substrate 11, and a partition wall 17 that partitions the plurality of organic EL elements 22 on the support substrate 11. Is done.
- the partition wall 17 is provided to separate the plurality of organic EL elements 22 on the support substrate 11.
- the partition wall 17 is formed in, for example, a lattice shape or a stripe shape.
- the partition walls 17 are provided in a stripe shape. That is, a plurality of partition walls 17 extending in the row direction X are provided on the support substrate 11 with a predetermined interval in the column direction Y.
- the row direction X and the column direction Y are orthogonal to each other, and the row direction X and the column direction Y are orthogonal to the thickness direction Z of the support substrate 11.
- a recess defined by a pair of partition walls 17 adjacent to each other in the column direction Y and the support substrate 11 and extending in the row direction is the recess 18.
- a plurality of recesses 18 are defined on the support substrate 11. Each of the recesses 18 corresponds to a predetermined row.
- an insulating film 19 is provided between the support substrate 11 and the partition wall 17.
- the insulating film 19 is provided to ensure electrical insulation between the organic EL elements 22 adjacent in the row direction X or the column direction Y, for example.
- the insulating film 19 is formed in a lattice shape, and is formed by integrally forming a plurality of strip-shaped portions extending in the row direction X and a plurality of strip-shaped portions extending in the column direction.
- the opening 19a of the insulating film 19 is formed at a position overlapping with the organic EL element when viewed from one side in the thickness direction of the support substrate 11 (hereinafter sometimes referred to as “in plan view”).
- the opening 19a of the insulating film 19 is formed in, for example, a substantially rectangular shape, an oval shape, a substantially circular shape, or a substantially oval shape in plan view.
- the lattice-like insulating film 19 is mainly formed in a region excluding the first electrode 12 to be described later in plan view, and a part thereof is formed so as to cover the periphery of the first electrode 12.
- the plurality of partition walls 17 described above are provided on a plurality of strip-shaped portions extending in the row direction X constituting a part of the insulating film.
- the plurality of organic EL elements 22 are provided between the partition walls 17 adjacent to each other in the column direction Y (that is, the recesses 18), with a predetermined interval in the row direction X between the partition walls 17.
- the plurality of organic EL elements 22 are arranged in a matrix on the support substrate 11.
- Each of the plurality of organic EL elements 22 is arranged at a predetermined interval in the row direction X and at a predetermined interval in the column direction Y.
- the organic EL elements 22 do not have to be physically separated from each other, and may be electrically insulated so that they can be individually driven. Therefore, some layers (an electrode and a hole injection layer described later) constituting the organic EL element 22 may be physically connected to other organic EL elements 22.
- the organic EL element 22 includes a pair of electrodes including the first electrode 12 and the second electrode 16, and a light emitting layer 15 provided between the electrodes.
- a pair of electrodes composed of the first electrode 12 and the second electrode 16 is composed of an anode and a cathode. That is, one of the first electrode 12 and the second electrode 16 is provided as an anode, and the other is provided as a cathode. Of the first electrode 12 and the second electrode 16, the first electrode 12 is disposed closer to the support substrate 11, and the second electrode 16 is disposed farther from the support substrate 11 than the first electrode 12. Is done.
- the organic EL element 22 is not limited to a single light emitting layer 15 and may include a plurality of light emitting layers. Further, not only the light emitting layer 15 but also a predetermined layer is provided between the pair of electrodes as necessary. For example, a hole injection layer, a hole transport layer, and an electron blocking layer are provided between the anode and the light emitting layer 15, and a hole blocking layer, an electron transport layer, and the like are provided between the light emitting layer 15 and the cathode. An electron injection layer or the like is provided.
- the organic EL element 22 of the present embodiment includes a low resistance layer (sometimes referred to as a first resistance layer) 13 formed by a coating method between the first electrode 12 and the light emitting layer 15, and the low resistance layer 13. And a high resistance layer (sometimes referred to as a second resistance layer) 14 having a higher electrical resistance than the resistance layer 13.
- a predetermined layer is provided between the first electrode 12 and the low resistance layer 13, between the high resistance layer 14 and the light emitting layer 15, and between the light emitting layer 15 and the second electrode 16, as necessary. May be provided.
- the first electrode 12 functioning as an anode
- the low resistance layer 13 functioning as a hole injection layer
- the high resistance layer 14 functioning as a hole transport layer
- a light emitting layer 15 The organic EL element 22 configured by stacking the second electrode 16 functioning as a cathode in this order so that the first electrode 12 is closer to the support substrate 11 will be described.
- the light emitting device 21 of this embodiment is an active matrix drive type device. Therefore, the first electrode 12 is individually provided for each organic EL element 22. That is, the same number of first electrodes 12 as the number of organic EL elements 22 are provided on the support substrate 11.
- the first electrode 12 has a plate shape, for example, and is formed in a substantially rectangular shape in plan view.
- the first electrode 12 is provided in a matrix corresponding to the position where each organic EL element 22 is provided on the support substrate 11.
- the plurality of first electrodes 12 are arranged at predetermined intervals in the row direction X and at predetermined intervals in the column direction Y. That is, the first electrode 12 is provided between the partition walls 17 adjacent in the column direction Y in a plan view, and is disposed between the partition walls 17 with a predetermined interval in the row direction X.
- the lattice-like insulating film 19 is mainly formed in a region excluding the first electrode 12 in a plan view, and a part thereof is formed to cover the periphery of the first electrode 12. That is, an opening 19 a that exposes a part of the first electrode 12 is formed in the insulating film 19. A part of the surface of the first electrode 12 is exposed from the insulating film 19 through the opening 19a.
- the low resistance layer 13 is arranged in a region sandwiched between the partition walls 17 so as to extend in the row direction X. That is, the low resistance layer 13 is formed in a strip shape in the recess 18 defined by the partition walls 17 adjacent in the column direction Y. The low resistance layer 13 is continuously formed so as to straddle the organic EL elements 22 adjacent in the row direction X.
- the low resistance layer 13 has a scooping portion 13 a that scoops up in the direction away from the support substrate 11 along the surface of the partition wall 17.
- both outer peripheral edges of the low resistance layer 13 in the column direction Y are in contact with the partition walls 17.
- a scooping portion 13a is formed at the outer peripheral edge.
- the raised portions 13a are formed only at both outer peripheral edge portions in the column direction Y of the low resistance layer 13.
- a grid-like partition wall is provided, and each organic EL element is individually separated by the partition wall. In the case of being divided, since all the outer peripheral edge portions of the low resistance layer are in contact with the partition walls, the low resistance layer has a rising portion on the entire outer peripheral edge portion.
- the high resistance layer 14 is continuously provided so as to extend from one organic EL element 22 adjacent to the other organic EL element 22 with the partition wall 17 interposed therebetween.
- the high resistance layer 14 is formed up to the partition wall 17 that separates one organic EL element 22 and the other organic EL element 22. That is, the high resistance layer 14 is formed so as to be integrally connected over the entire surface of the low resistance layer 13 and the surface of the partition wall 17 exposed from the low resistance layer 13.
- the scooping portion 13 a of the low resistance layer 13 is covered with the high resistance layer 14. Therefore, the second electrode (cathode) 16 formed after the high resistance layer 14 and the low resistance layer 13 can be separated from each other and physically connected.
- the electrical resistance of the high resistance layer 14, that is, the electrical resistivity, should be higher than at least the electrical resistivity of the low resistance layer 13.
- the electrical resistivity of the high resistance layer 14 is preferably, for example, 10 times or more, more preferably 100 times or more that of the low resistance layer 13.
- the upper limit of the electrical resistivity of the high resistance layer 14 is appropriately set in consideration of the film thickness of the high resistance layer 14 and the characteristics of the organic EL element 22.
- the light emitting layer 15 is arranged extending in the row direction X in a region sandwiched between the partition walls 17. That is, the light emitting layer 15 is formed in a strip shape in the recess 18 defined by the partition walls 17 adjacent to each other in the column direction Y, and continuously formed so as to straddle a plurality of organic EL elements 22 adjacent in the row direction X. Has been.
- the color display device can be realized, for example, by repeatedly arranging the following rows (I), (II), and (III) in the column direction Y in this order.
- a light emitting layer having a different emission color is provided for each type of organic EL element having a different emission color.
- the following rows (i), (ii), and (iii) in which three types of light emitting layers 15R, 15G, and 15B are provided are repeatedly arranged in this order in the column direction Y.
- (ii) Row in which the light emitting layer 15G emitting green light is provided
- iii Row of three types of rows in which the light emitting layer 15B emitting blue light is provided
- the strip-shaped light emitting layer 15R, the light emitting layer 15G, and the light emitting layer 15B extending in the row direction X are sequentially stacked on the high resistance layer 14 at intervals of two rows in the column direction Y, respectively.
- the second electrode 16 is provided on the light emitting layer 15.
- the second electrode 16 is continuously formed across the plurality of organic EL elements 22 and is provided as a common electrode for the plurality of organic EL elements 22.
- the second electrode 16 is formed not only on the light emitting layer 15 but also on the partition wall 17 and formed on one surface so that the electrode on the light emitting layer 15 and the electrode on the partition wall 17 are connected.
- the support substrate 11 is prepared.
- a substrate on which circuits for individually driving a plurality of organic EL elements are formed in advance can be used as the support substrate 11.
- a substrate on which a TFT (Thin Film Transistor) is formed in advance can be used as the support substrate.
- a plurality of first electrodes 12 are formed in a matrix on the prepared support substrate 11.
- the first electrode 12 is formed, for example, by forming a conductive thin film on one surface of the support substrate 11 and applying this to a photolithographic method (in the following description, “photolithographic method” includes a mask pattern forming step). A patterning process such as an etching process is included, and the like is formed by patterning in a matrix.
- a mask having an opening formed in a predetermined portion is disposed on the support substrate 11, and a conductive material is selectively deposited on the predetermined portion on the support substrate 11 through the mask to thereby form the first electrode. 12 may be patterned. The material of the first electrode 12 will be described later.
- a substrate on which the first electrode 12 is formed in advance may be prepared as the support substrate 11.
- the partition wall 17 is made of an organic material or an inorganic material.
- the organic material constituting the partition wall 17 include resins such as acrylic resin, phenol resin, and polyimide resin.
- examples of the inorganic material constituting the partition wall 17 include SiO x and SiN x .
- the partition wall 17 made of an organic material first, for example, a positive or negative photosensitive resin is applied to one surface, and a predetermined portion is exposed and developed. Further, by curing this, a stripe-shaped partition wall 17 is formed. Note that a photoresist can be used as the photosensitive resin.
- a thin film made of an inorganic material is formed on one surface by a plasma CVD method, a sputtering method, or the like.
- striped partition walls 17 are formed by removing predetermined portions of the thin film. The predetermined portion is removed by, for example, a photolithography method.
- the insulating film 19 is formed before the step of forming the partition wall 17.
- the insulating film 19 can be formed in a lattice shape in the same manner as the method for forming the partition wall 17 by using, for example, the material exemplified as the material for the partition wall 17.
- the shape of the partition 17 and the arrangement thereof are appropriately set according to the specifications of the display device such as the number of pixels and the resolution, the ease of manufacturing, and the like.
- the width L1 of the partition walls 17 in the column direction Y is about 5 ⁇ m to 50 ⁇ m.
- the height L2 of the partition wall 17 is about 0.5 ⁇ m to 5 ⁇ m.
- the distance L3 between the partition walls 17 adjacent in the column direction Y, that is, the width L3 of the recesses 18 in the column direction Y is about 10 ⁇ m to 200 ⁇ m.
- the widths of the first electrode 12 in the row direction X and the column direction Y are about 10 ⁇ m to 400 ⁇ m, respectively.
- Step of forming a low resistance layer In this step, ink containing a material that becomes the low resistance layer 13 is supplied between the partition walls 17 and solidified to form the low resistance layer 13. In this embodiment, in order to form the low resistance layer 13 that functions as a hole injection layer, ink containing a material to be a hole injection layer is supplied between the partition walls 17 and solidified to form the low resistance layer 13. Form.
- any method may be used as long as the ink can be selectively supplied between the partition walls 17.
- Examples of such a method include a predetermined printing method, a nozzle printing method, an ink jet method, and a flexographic printing method.
- a predetermined printing method such as a nozzle printing method or a flexographic printing method is preferable, and a nozzle printing method is more preferable.
- ink is supplied to each row (recessed portion 18) with a single stroke. That is, while the liquid columnar ink is ejected from the nozzles arranged above the support substrate 11, the support substrate 11 is moved in the column direction Y when the nozzles are reciprocated in the row direction X and the nozzles are turned back and forth. Ink is supplied to each row by moving it by one row.
- the ink is not limited to the method of sequentially supplying ink to each row as in the present embodiment, and the ink may be supplied with a predetermined line interval. In this case, ink is supplied to all the rows in multiple times.
- the low resistance layer 13 is formed by solidifying the ink supplied to the recesses 18 between the partition walls 17.
- the ink can be solidified, for example, by removing the solvent.
- the removal of the solvent can be performed by natural drying, heat drying, vacuum drying, or the like.
- the ink to be used includes a material that is polymerized by applying energy such as light and heat
- the low resistance layer 13 may be solidified by applying energy such as light and heat after the ink is supplied.
- a scooping portion 13 a is formed at the outer peripheral edge of the low resistance layer 13.
- ink including a material that becomes the high resistance layer 14 is supplied to all the regions so that the ink is distributed over the entire region (for example, the entire exposed surface) where the plurality of organic EL elements 22 are to be formed.
- examples of methods for supplying ink to the entire area in this way include spin coating, slit coating, and CAP coating.
- the high resistance layer 14 is not limited to the coating method, and may be formed by a predetermined dry method such as a vapor deposition method or a sputtering method.
- the high resistance layer 14 is formed by solidifying the ink supplied between the partition walls 17.
- the ink can be solidified, for example, by removing the solvent.
- the removal of the solvent can be performed by natural drying, heat drying, vacuum drying, or the like.
- the high resistance layer 14 may be formed by solidifying by applying energy such as light and heat after supplying the ink. Good.
- the high resistance layer is continuously formed so as to extend from one organic EL element to the other with the partition interposed. Is done.
- the light emitting layer 15 is formed.
- the material of the light emitting layer 15 for each row in order to manufacture three types of organic EL elements 22.
- a red ink containing a material that emits red light a green ink containing a material that emits green light
- a blue ink containing a material that emits blue light It is necessary to apply at intervals of two rows in the row direction Y.
- Each light emitting layer 15 (15R, 15G, 15B) can be applied and formed by sequentially applying red ink, green ink, and blue ink to predetermined rows.
- Examples of a method for sequentially applying red ink, green ink, and blue ink to a predetermined line include predetermined application methods such as a printing method, an ink jet method, and a nozzle printing method.
- predetermined application methods such as a printing method, an ink jet method, and a nozzle printing method.
- ink can be applied in the same manner as the method of forming the low resistance layer 13 described above.
- the nozzles are reciprocated in the row direction X, and the support substrate 11 is moved in the column direction Y when the reciprocation of the nozzles is turned back.
- the red ink can be supplied every two lines by moving the line by three lines.
- the green ink and blue ink can be supplied in the same manner as the red ink supply method.
- the light emitting layer 15 is formed by solidifying the ink supplied between the partition walls 17.
- the ink can be solidified, for example, by removing the solvent.
- the removal of the solvent can be performed by natural drying, heat drying, vacuum drying, or the like.
- the ink to be used includes a material that is polymerized by applying energy such as light and heat
- the light emitting layer 15 may be formed by solidifying by applying energy such as light and heat after the ink is supplied. .
- a predetermined organic layer, an inorganic layer, or the like is formed by a predetermined method as necessary. These may be formed by using a predetermined coating method such as a printing method, an ink jet method, a nozzle printing method, or a predetermined dry method such as a vapor deposition method or a sputtering method.
- a predetermined coating method such as a printing method, an ink jet method, a nozzle printing method, or a predetermined dry method such as a vapor deposition method or a sputtering method.
- the second electrode 16 is formed. As described above, in the present embodiment, the second electrode 16 is formed on the entire surface of the support substrate 11 (the entire exposed surface). A plurality of organic EL elements 22 are formed on the support substrate 11 by forming the second electrode 16.
- the creeping portion 13 a of the low resistance layer 13 is covered with the high resistance layer 14 having a higher electrical resistivity than the low resistance layer 13. Therefore, it is possible to prevent the low resistance layer 13 and the second electrode 16 from being physically connected.
- a leak current that flows along the side surface of the partition wall is easily generated.
- the organic EL element 22 (light emitting device 21) of the present embodiment since the high resistance layer 14 is interposed between the low resistance layer 13 and the second electrode 16, leakage current flowing along the side surface of the partition wall 17 is prevented. Can be prevented.
- the organic EL element 22 can have various layer configurations.
- the layer structure of the organic EL element 22, the configuration of each layer, and the method of forming each layer will be described in more detail.
- the organic EL element 22 includes a pair of electrodes and one or a plurality of organic layers provided between the electrodes, and has at least one light emitting layer 15 as one or a plurality of organic layers.
- the organic EL element 22 may include a layer containing an inorganic substance and an organic substance, an inorganic layer, and the like.
- the organic substance constituting the organic layer may be a low molecular compound or a high molecular compound, or a mixture of a low molecular compound and a high molecular compound.
- the organic layer preferably contains a polymer compound, and preferably contains a polymer compound having a polystyrene-equivalent number average molecular weight of 10 3 to 10 8 .
- Examples of the layer provided between the cathode and the light emitting layer 15 include an electron injection layer, an electron transport layer, and a hole blocking layer.
- the layer close to the cathode is referred to as an electron injection layer
- the layer close to the light emitting layer 15 is referred to as an electron transport layer.
- Examples of the layer provided between the anode and the light emitting layer 15 include a hole injection layer, a hole transport layer, and an electron block layer.
- a layer close to the anode is referred to as a hole injection layer
- a layer close to the light emitting layer 15 is referred to as a hole transport layer.
- An example of the element configuration of the organic EL element 22 is shown below.
- a) Anode / hole injection layer / light emitting layer / electron transport layer / electron injection layer / cathode b) Anode / hole transport layer / light emitting layer / electron transport layer / electron injection layer / cathode c) Anode / hole injection layer / Hole transport layer / light emitting layer / cathode d) anode / hole injection layer / hole transport layer / light emitting layer / electron injection layer / cathode e) anode / hole injection layer / hole transport layer / light emitting layer / electron Transport layer / cathode f) anode / hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer / cathode g) anode / light emitting layer / electron transport layer / electron injection layer / cathode “/” Indicates that the
- the organic EL element may have two or more light-emitting layers, or a so-called multi-photon type having two or more light-emitting layers and a charge generation layer for generating charges interposed between the light-emitting layers. You may comprise an element.
- the organic EL element may be further covered with a sealing member such as a sealing film or a sealing plate for sealing.
- the order of the layers to be laminated, the number of layers, and the thickness of each layer can be appropriately set in consideration of light emission efficiency and element lifetime.
- the anode may be disposed closer to the support substrate 11, and the cathode may be disposed away from the support substrate, and conversely, the cathode is disposed closer to the support substrate 11.
- the anode may be disposed at a position separated from the support substrate 11.
- the first electrode 12 may be used as an anode, and each layer may be laminated on the support substrate 11 in order from the layer shown on the left side.
- the first electrode 12 may be a cathode, and the layers may be stacked on the support substrate 11 in order from the layer shown on the right side.
- an electrode exhibiting light transmittance is used for the anode.
- the electrode exhibiting light transmittance a thin film of metal oxide, metal sulfide, metal or the like having high electrical conductivity can be used, and a material having high light transmittance is preferably used.
- Examples of light transmissive electrodes are specifically indium oxide, zinc oxide, tin oxide, indium tin oxide (ITO), indium zinc oxide (IZO), gold, platinum, silver, and copper.
- a thin film made of ITO, IZO, or tin oxide is preferably used.
- Examples of a method for producing the anode include a vacuum deposition method, a sputtering method, an ion plating method, and a plating method. Further, as the anode, an organic transparent conductive film such as polyaniline or a derivative thereof, polythiophene or a derivative thereof may be used.
- a material that reflects light may be used for the anode, and a material that reflects light may be a work function. Metals, metal oxides, and metal sulfides of 3.0 eV or more are preferable.
- the film thickness of the anode can be appropriately selected in consideration of light transmittance and electric resistance.
- the thickness of the anode is, for example, 10 nm to 10 ⁇ m, preferably 20 nm to 1 ⁇ m, and more preferably 50 nm to 500 nm.
- the hole injection material constituting the hole injection layer examples include oxides such as vanadium oxide, molybdenum oxide, ruthenium oxide, and aluminum oxide, phenylamine compounds, starburst type amine compounds, phthalocyanine compounds, amorphous carbon, polyaniline And polythiophene derivatives.
- Examples of the method for forming the hole injection layer include film formation from a solution containing a hole injection material.
- the solvent of the solution used for film formation from the solution is not particularly limited as long as it can dissolve the hole injection material.
- Examples of the hole injection material include chlorine solvents such as chloroform, methylene chloride and dichloroethane, ether solvents such as tetrahydrofuran, aromatic hydrocarbon solvents such as toluene and xylene, ketone solvents such as acetone and methyl ethyl ketone, ethyl acetate and butyl acetate. , Ester solvents such as ethyl cellosolve acetate, and water.
- film-forming methods from solutions include spin coating, casting, micro gravure coating, gravure coating, bar coating, roll coating, wire bar coating, dip coating, spray coating, and screen printing.
- coating methods such as a printing method, flexographic printing method, offset printing method, inkjet printing method, and nozzle printing method.
- the hole injection layer is preferably formed by the nozzle printing method described above.
- the film thickness of the hole injection layer is appropriately set in consideration of electrical characteristics and ease of film formation.
- the thickness of the hole injection layer is, for example, 1 nm to 1 ⁇ m, preferably 2 nm to 500 nm, and more preferably 5 nm to 200 nm.
- the hole transport material constituting the hole transport layer examples include polyvinyl carbazole or a derivative thereof, polysilane or a derivative thereof, a polysiloxane derivative having an aromatic amine in a side chain or a main chain, a pyrazoline derivative, an arylamine derivative, a stilbene Derivative, triphenyldiamine derivative, polyaniline or derivative thereof, polythiophene or derivative thereof, polyarylamine or derivative thereof, polypyrrole or derivative thereof, poly (p-phenylene vinylene) or derivative thereof, or poly (2,5-thienylene vinylene) ) Or a derivative thereof.
- hole transport materials include polyvinyl carbazole or derivatives thereof, polysilane or derivatives thereof, polysiloxane derivatives having aromatic amine compound groups in the side chain or main chain, polyaniline or derivatives thereof, polythiophene or derivatives thereof, poly Preferred is a polymeric hole transport material such as arylamine or a derivative thereof, poly (p-phenylene vinylene) or a derivative thereof, or poly (2,5-thienylene vinylene) or a derivative thereof, more preferably polyvinyl carbazole or a derivative thereof. , Polysilane or a derivative thereof, and a polysiloxane derivative having an aromatic amine in the side chain or main chain. In the case of a low-molecular hole transport material, it is preferably used by being dispersed in a polymer binder.
- hole transport layer There is no particular limitation on the method for forming the hole transport layer.
- film formation from a mixed solution containing a polymer binder and a hole transport material can be exemplified.
- film formation from a solution containing the hole transport material can be exemplified.
- the solvent of the solution used for film formation from the solution is not particularly limited as long as it can dissolve the hole transport material.
- the solvent illustrated as a solvent of the solution used when forming a positive hole injection layer into a film from a solution can be used, for example.
- the hole transport layer can be formed, for example, by the spin coating method described above.
- polymer binder to be mixed those that do not extremely inhibit charge transport are preferable, and polymer binders that are weakly absorbed by visible light are suitably used.
- the polymer binder include polycarbonate, polyacrylate, polymethyl acrylate, polymethyl methacrylate, polystyrene, polyvinyl chloride, and polysiloxane.
- the film thickness of the hole transport layer is appropriately set in consideration of the electrical characteristics and the ease of film formation.
- the film thickness of the hole transport layer is, for example, 1 nm to 1 ⁇ m, preferably 2 nm to 500 nm, and more preferably 5 nm to 200 nm.
- the light emitting layer 15 is generally composed of an organic substance that mainly emits fluorescence and / or phosphorescence, or an organic substance and a dopant that assists the organic substance.
- the dopant is added to change the emission wavelength, for example, to improve the luminous efficiency.
- the organic substance may be a low molecular compound or a high molecular compound.
- the light emitting layer 15 preferably contains a polymer compound having a polystyrene-equivalent number average molecular weight of 10 3 to 10 8 .
- Examples of the light emitting material constituting the light emitting layer 15 include the following dye materials, metal complex materials, polymer materials, and dopant materials.
- dye material examples include cyclopentamine derivatives, tetraphenylbutadiene derivatives, triphenylamine derivatives, oxadiazole derivatives, pyrazoloquinoline derivatives, distyrylbenzene derivatives, distyrylarylene derivatives, pyrrole derivatives, thiophene ring compounds, pyridines.
- examples include ring compounds, perinone derivatives, perylene derivatives, oligothiophene derivatives, oxadiazole dimers, pyrazoline dimers, quinacridone derivatives, coumarin derivatives, and the like.
- Metal complex materials examples include rare earth metals such as Tb, Eu and Dy, or Al, Zn, Be, Ir, Pt, etc. as a central metal, and an oxadiazole, thiadiazole, phenylpyridine, phenylbenzimidazole, quinoline structure And the like.
- metal complex materials include metal complexes that emit light from triplet excited states such as iridium complexes and platinum complexes, aluminum quinolinol complexes, benzoquinolinol beryllium complexes, benzoxazolyl zinc complexes, benzothiazole zinc complexes, azomethyl zinc complexes. , Porphyrin zinc complex, phenanthroline europium complex, and the like.
- polymer material examples include polyparaphenylene vinylene derivatives, polythiophene derivatives, polyparaphenylene derivatives, polysilane derivatives, polyacetylene derivatives, polyfluorene derivatives, polyvinyl carbazole derivatives, those obtained by polymerizing the above dye-based materials and metal complex materials And so on.
- Examples of materials that emit blue light among the above light-emitting materials include distyrylarylene derivatives, oxadiazole derivatives, and polymers thereof, polyvinylcarbazole derivatives, polyparaphenylene derivatives, and polyfluorene derivatives. .
- polyvinyl carbazole derivatives, polyparaphenylene derivatives, polyfluorene derivatives and the like which are polymer materials are preferable.
- Examples of materials that emit green light include quinacridone derivatives, coumarin derivatives, and polymers thereof, polyparaphenylene vinylene derivatives, polyfluorene derivatives, and the like. Of these, polymer materials such as polyparaphenylene vinylene derivatives and polyfluorene derivatives are preferred.
- Examples of materials that emit red light include coumarin derivatives, thiophene ring compounds, and polymers thereof, polyparaphenylene vinylene derivatives, polythiophene derivatives, polyfluorene derivatives, and the like.
- polymer materials such as polyparaphenylene vinylene derivatives, polythiophene derivatives, polyfluorene derivatives and the like are preferable.
- Dopant material examples include perylene derivatives, coumarin derivatives, rubrene derivatives, quinacridone derivatives, squalium derivatives, porphyrin derivatives, styryl dyes, tetracene derivatives, pyrazolone derivatives, decacyclene, and phenoxazone. Note that the thickness of such a light emitting layer is usually about 2 nm to 200 nm.
- Examples of the light emitting material film forming method include a printing method, an ink jet printing method, a nozzle printing method, and the like. For example, as described above, a plurality of types of ink can be applied separately by the nozzle printing method.
- electron transport material constituting the electron transport layer
- known materials can be used.
- electron transport materials include oxadiazole derivatives, anthraquinodimethane or derivatives thereof, benzoquinone or derivatives thereof, naphthoquinone or derivatives thereof, anthraquinones or derivatives thereof, tetracyanoanthraquinodimethane or derivatives thereof, fluorenone derivatives, diphenyl
- electron transport materials include oxadiazole derivatives, benzoquinone or derivatives thereof, anthraquinones or derivatives thereof, metal complexes of 8-hydroxyquinoline or derivatives thereof, polyquinoline or derivatives thereof, polyquinoxaline or derivatives thereof, polyfluorenes Or a derivative thereof, preferably 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole, benzoquinone, anthraquinone, tris (8-quinolinol) aluminum, and polyquinoline. preferable.
- the method for forming the electron transport layer there is no particular limitation on the method for forming the electron transport layer.
- a vacuum deposition method from a powder, or a film formation from a solution or a molten state can be exemplified.
- film formation from a solution or a molten state can be exemplified.
- a polymer binder may be used in combination. Examples of the film forming method from a solution include the same coating method as the above-described film forming method of the in-hole injection layer.
- the film thickness of the electron transport layer is appropriately set in consideration of the electrical characteristics and the ease of film formation.
- the thickness of the electron transport layer is, for example, 1 nm to 1 ⁇ m, preferably 2 nm to 500 nm, more preferably 5 nm to 200 nm.
- ⁇ Electron injection layer> As a material constituting the electron injection layer, an optimum material is appropriately selected according to the type of the light emitting layer 14. Examples of the material constituting the electron injection layer include alkali metals, alkaline earth metals, alloys containing at least one of alkali metals and alkaline earth metals, oxides of alkali metals or alkaline earth metals, alkali metals or Alkali earth metal halides, alkali metals or alkaline earth metal carbonates, mixtures of these substances, and the like can be given.
- alkali metals, alkali metal oxides, alkali metal halides, and alkali metal carbonates include lithium, sodium, potassium, rubidium, cesium, lithium oxide, lithium fluoride, sodium oxide, sodium fluoride, Examples include potassium oxide, potassium fluoride, rubidium oxide, rubidium fluoride, cesium oxide, cesium fluoride, and lithium carbonate.
- alkaline earth metals, alkaline earth metal oxides, alkaline earth metal halides, alkaline earth metal carbonates include magnesium, calcium, barium, strontium, magnesium oxide, magnesium fluoride, Examples thereof include calcium oxide, calcium fluoride, barium oxide, barium fluoride, strontium oxide, strontium fluoride, and magnesium carbonate.
- the electron injection layer may be composed of a laminate in which two or more layers are laminated, and examples thereof include LiF / Ca.
- the electron injection layer is formed by vapor deposition, sputtering, printing, or the like.
- the thickness of the electron injection layer is preferably about 1 nm to 1 ⁇ m.
- a material for the cathode As a material for the cathode, a material having a small work function, easy electron injection into the light emitting layer 15, and high electrical conductivity is preferable. Further, in the organic EL element 22 configured to extract light from the anode side, the light emitted from the light emitting layer 15 is reflected toward the anode by the cathode. Therefore, a material having a high visible light reflectance is preferable as the cathode material. As the material of the cathode, for example, alkali metal, alkaline earth metal, transition metal, periodic table group 13 metal and the like can be used.
- cathode material examples include lithium, sodium, potassium, rubidium, cesium, beryllium, magnesium, calcium, strontium, barium, aluminum, scandium, vanadium, zinc, yttrium, indium, cerium, samarium, europium, terbium, ytterbium, and the like.
- An alloy, graphite, or a graphite intercalation compound is used.
- alloys include magnesium and silver alloys, magnesium and indium alloys, magnesium and aluminum alloys, indium and silver alloys, lithium and aluminum alloys, lithium and magnesium alloys, lithium and An alloy of indium, an alloy of calcium and aluminum, and the like can be given.
- a transparent conductive electrode made of a conductive metal oxide, a conductive organic material, or the like can be used as the cathode.
- the conductive metal oxide include indium oxide, zinc oxide, tin oxide, ITO, and IZO.
- the conductive organic material include polyaniline or a derivative thereof, polythiophene or a derivative thereof, and the like.
- the cathode may be composed of a laminate in which two or more layers are laminated. In some cases, the electron injection layer is used as a cathode.
- the film thickness of the cathode is appropriately set in consideration of electric conductivity and durability.
- the thickness of the cathode is, for example, 10 nm to 10 ⁇ m, preferably 20 nm to 1 ⁇ m, and more preferably 50 nm to 500 nm.
- Examples of the method for producing the cathode include a vacuum deposition method, a sputtering method, and a laminating method in which a metal thin film is thermocompression bonded.
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Abstract
Description
有機EL素子は一対の電極と、この電極間に設けられる複数の所定の層とを含んで構成される。有機EL素子は所定の層として少なくとも1層の発光層を備える。なお図3に示されるように、有機EL素子は陽極2、正孔注入層3、正孔輸送層4、発光層5、陰極6が、支持基板1に、陽極2が支持基板1寄りとなるようにこの順番で積層されて構成されている。
[1] 支持基板と、支持基板上において複数の有機エレクトロルミネッセンス素子を区分けする隔壁と、隔壁同士の間である凹部に設けられる複数の有機エレクトロルミネッセンス素子とを備える発光装置であって、
各有機エレクトロルミネッセンス素子は、第1の電極と、第1の抵抗層と、第1の抵抗層よりも電気抵抗の高い第2の抵抗層と、発光層と、第2の電極とが、第1の電極が支持基板寄りとなるようにこの順に配置されて構成され、
第1の抵抗層は、隔壁の表面に沿って支持基板から離れる方向に這い上がる這い上がり部を有し、
第2の抵抗層は、隔壁を介在させて隣り合う一方の有機エレクトロルミネッセンス素子から他方の有機エレクトロルミネッセンス素子にまたがるように連続して設けられる、発光装置。
[2] 支持基板と、支持基板上において複数の有機エレクトロルミネッセンス素子を区分けする隔壁と、隔壁同士の間である凹部に設けられる複数の有機エレクトロルミネッセンス素子とを備える発光装置であり、有機エレクトロルミネッセンス素子は、第1の電極と、第1の抵抗層と、第1の抵抗層よりも電気抵抗が大きい第2の抵抗層と、発光層と、第2の電極とが、第1の電極が支持基板寄りとなるようにこの順に配置されて構成される、発光装置の製造方法において、
隔壁および第1の電極が設けられた支持基板を用意する工程と、
第1の抵抗層となる材料を含むインキを凹部に供給し、インキを固化して第1の抵抗層を形成する工程と、
複数の有機エレクトロルミネッセンス素子が形成されるべき全領域に亘ってインキが連なるように、第2の抵抗層となる材料を含むインキを前記全領域に供給し、これを固化して第2の抵抗層を形成する工程と、
発光層を形成する工程と、
第2の電極を形成する工程と
を含む、発光装置の製造方法。
[3] 第1の抵抗層を形成する工程が、ノズルプリンティング法により実施される、[2]記載の発光装置の製造方法。
まず図1及び図2を参照して、本実施形態の発光装置の構成について説明する。なお以下の説明において、各図は発明が理解できる程度に構成要素の形状、大きさ及び配置が概略的に示されているに過ぎず、これにより本発明が特に限定されるものではない。また各図において、同様の構成成分については同一の符号を付して示し、その重複する説明を省略する場合がある。
図1は発光装置を模式的に示す断面図である。図2は発光装置を模式的に示す平面図である。発光装置21は、主に支持基板11と、この支持基板11上に形成される複数の有機EL素子22と、支持基板11上において複数の有機EL素子22を区分けする隔壁17とを含んで構成される。
絶縁膜19の開口19aは、支持基板11の厚み方向の一方からみて(以下、「平面視で」という場合がある。)有機EL素子と重なる位置に形成される。
絶縁膜19の開口19aは平面視でたとえば略矩形、小判形、略円形および略楕円形などに形成される。格子状の絶縁膜19は平面視で、後述する第1の電極12を除く領域に主に形成され、その一部が第1の電極12の周縁を覆って形成される。また前述した複数本の隔壁17は、絶縁膜の一部を構成する行方向Xに延在する複数本の帯状の部分上に設けられる。
すなわち第1の電極12は平面視で、列方向Yに隣り合う隔壁17同士の間に設けられ、隔壁17同士の間それぞれにおいて、行方向Xに所定の間隔をあけて配置されている。
(I)赤色の光を放つ複数の有機EL素子22Rが所定の間隔をあけて配列される行
(II)緑色の光を放つ複数の有機EL素子22Gが所定の間隔をあけて配列される行
(III)青色の光を放つ複数の有機EL素子22Bが所定の間隔をあけて配列される行
(i)赤色の光を放つ発光層15Rが設けられる行
(ii)緑色の光を放つ発光層15Gが設けられる行
(iii)青色の光を放つ発光層15Bが設けられる行の3種類の行
次に発光装置の製造方法について説明する。
まず支持基板11を用意する。アクティブマトリクス駆動型の表示装置の場合、この支持基板11として、複数の有機EL素子を個別に駆動するための回路が予め形成された基板を用いることができる。たとえばTFT(Thin Film Transistor)が予め形成された基板を支持基板として用いることができる。
たとえば隔壁17の列方向Yの幅L1は、5μm~50μm程度である。隔壁17の高さL2は0.5μm~5μm程度である。列方向Yに隣り合う隔壁17間の間隔L3、すなわち凹部18の列方向Yの幅L3は、10μm~200μm程度である。また第1の電極12の行方向Xおよび列方向Yの幅はそれぞれ10μm~400μm程度である。
本工程では低抵抗層13となる材料を含むインキを隔壁17同士の間に供給し、これを固化して低抵抗層13を形成する。本実施形態では正孔注入層として機能する低抵抗層13を形成するため、正孔注入層となる材料を含むインキを隔壁17同士の間に供給し、これを固化して低抵抗層13を形成する。
本実施形態のようにストライプ状の隔壁17同士の間である凹部18にインキを供給する場合には、ノズルプリンティング法やフレキソ印刷法などの所定の印刷法が好ましく、ノズルプリンティング法がより好ましい。
本工程では、まず複数の有機EL素子22が形成されるべき全領域(例えば露出面の全面)に亘ってインキが行き渡るように、高抵抗層14となる材料を含むインキを前記全領域に供給する。このように前記全領域にインキを供給する方法としては、スピンコート法、スリットコート法、CAPコート法などをあげることができる。なお高抵抗層14は塗布法に限らず、蒸着法、スパッタリング法などの所定の乾式法によって形成してもよい。
次に発光層15を形成する。前述したようにカラー表示装置を作製する場合には、3種類の有機EL素子22を作製するために、発光層15の材料を行ごとに塗りわける必要がある。たとえば3種類の発光層15を行ごとに形成する場合、赤色の光を放つ材料を含む赤インキ、緑色の光を放つ材料を含む緑インキ、青色の光を放つ材料を含む青インキを、それぞれ列方向Yに2列の間隔をあけて塗布する必要がある。そして赤インキ、緑インキ、青インキを所定の行に順次塗布することによって各発光層15(15R、15G、15B)を塗布成膜することができる。赤インキ、緑インキ、青インキを所定の行に順次塗布する方法としては、印刷法、インクジェット法、ノズルプリンティング法などの所定の塗布法が挙げられる。たとえばノズルプリンティング法では前述した低抵抗層13を形成する方法と同様にしてインキを塗布することができる。
次に第2の電極16を形成する。前述したように本実施形態では第2の電極16を支持基板11上の全面(露出面の全面)に形成する。第2電極16を形成することによって複数の有機EL素子22が支持基板11上に形成される。
前述したように有機EL素子22は種々の層構成をとりうるが、以下では有機EL素子22の層構造、各層の構成、および各層の形成方法についてさらに詳しく説明する。
a)陽極/正孔注入層/発光層/電子輸送層/電子注入層/陰極
b)陽極/正孔輸送層/発光層/電子輸送層/電子注入層/陰極
c)陽極/正孔注入層/正孔輸送層/発光層/陰極
d)陽極/正孔注入層/正孔輸送層/発光層/電子注入層/陰極
e)陽極/正孔注入層/正孔輸送層/発光層/電子輸送層/陰極
f)陽極/正孔注入層/正孔輸送層/発光層/電子輸送層/電子注入層/陰極
g)陽極/発光層/電子輸送層/電子注入層/陰極
ここで、記号「/」は、記号「/」を挟む各層が隣接して積層されていることを示す。以下同じ。
発光層15から放たれる光が陽極を通って出射する構成の有機EL素子22の場合、陽極には光透過性を示す電極が用いられる。光透過性を示す電極としては、電気伝導度の高い金属酸化物、金属硫化物および金属などの薄膜を用いることができ、光透過率の高い材料が好適に用いられる。光透過性を示す電極の例としては、具体的には酸化インジウム、酸化亜鉛、酸化スズ、インジウムスズ酸化物(ITO)、インジウム亜鉛酸化物(IZO)、金、白金、銀、および銅などから成る薄膜が用いられ、これらの中でもITO、IZO、または酸化スズから成る薄膜が好適に用いられる。陽極の作製方法としては、真空蒸着法、スパッタリング法、イオンプレーティング法、メッキ法などを挙げることができる。また陽極として、ポリアニリンもしくはその誘導体、ポリチオフェンもしくはその誘導体などの有機の透明導電膜を用いてもよい。
正孔注入層を構成する正孔注入材料の例としては、酸化バナジウム、酸化モリブデン、酸化ルテニウム、および酸化アルミニウムなどの酸化物、フェニルアミン化合物、スターバースト型アミン化合物、フタロシアニン化合物、アモルファスカーボン、ポリアニリン、およびポリチオフェン誘導体などを挙げることができる。
正孔輸送層を構成する正孔輸送材料の例としては、ポリビニルカルバゾール若しくはその誘導体、ポリシラン若しくはその誘導体、側鎖若しくは主鎖に芳香族アミンを有するポリシロキサン誘導体、ピラゾリン誘導体、アリールアミン誘導体、スチルベン誘導体、トリフェニルジアミン誘導体、ポリアニリン若しくはその誘導体、ポリチオフェン若しくはその誘導体、ポリアリールアミン若しくはその誘導体、ポリピロール若しくはその誘導体、ポリ(p-フェニレンビニレン)若しくはその誘導体、又はポリ(2,5-チエニレンビニレン)若しくはその誘導体などを挙げることができる。
発光層15は通常、主として蛍光及び/又はりん光を発光する有機物、またはこの有機物とこれを補助するドーパントとから構成される。ドーパントは、例えば発光効率を向上させるため、発光波長を変化させるために加えられる。なお有機物は、低分子化合物でも高分子化合物でもよい。発光層15は、ポリスチレン換算の数平均分子量が、103~108である高分子化合物を含むことが好ましい。発光層15を構成する発光材料としては、例えば以下の色素材料、金属錯体材料、高分子材料、ドーパント材料を挙げることができる。
色素材料としては、例えば、シクロペンダミン誘導体、テトラフェニルブタジエン誘導体、トリフェニルアミン誘導体、オキサジアゾール誘導体、ピラゾロキノリン誘導体、ジスチリルベンゼン誘導体、ジスチリルアリーレン誘導体、ピロール誘導体、チオフェン環化合物、ピリジン環化合物、ペリノン誘導体、ペリレン誘導体、オリゴチオフェン誘導体、オキサジアゾールダイマー、ピラゾリンダイマー、キナクリドン誘導体、クマリン誘導体などを挙げることができる。
金属錯体材料としては、例えばTb、Eu、Dyなどの希土類金属、またはAl、Zn、Be、Ir、Ptなどを中心金属に有し、オキサジアゾール、チアジアゾール、フェニルピリジン、フェニルベンゾイミダゾール、キノリン構造などを配位子に有する金属錯体を挙げることができる。金属錯体材料としては、例えばイリジウム錯体、白金錯体などの三重項励起状態からの発光を有する金属錯体、アルミニウムキノリノール錯体、ベンゾキノリノールベリリウム錯体、ベンゾオキサゾリル亜鉛錯体、ベンゾチアゾール亜鉛錯体、アゾメチル亜鉛錯体、ポルフィリン亜鉛錯体、フェナントロリンユーロピウム錯体などを挙げることができる。
高分子材料の例としては、ポリパラフェニレンビニレン誘導体、ポリチオフェン誘導体、ポリパラフェニレン誘導体、ポリシラン誘導体、ポリアセチレン誘導体、ポリフルオレン誘導体、ポリビニルカルバゾール誘導体、上記色素系材料、金属錯体材料を高分子化したものなどを挙げることができる。
ドーパント材料としては、例えばペリレン誘導体、クマリン誘導体、ルブレン誘導体、キナクリドン誘導体、スクアリウム誘導体、ポルフィリン誘導体、スチリル色素、テトラセン誘導体、ピラゾロン誘導体、デカシクレン、フェノキサゾンなどを挙げることができる。なお、このような発光層の厚さは、通常約2nm~200nmである。
電子輸送層を構成する電子輸送材料としては、公知のものを使用できる。電子輸送材料の例としては、オキサジアゾール誘導体、アントラキノジメタン若しくはその誘導体、ベンゾキノン若しくはその誘導体、ナフトキノン若しくはその誘導体、アントラキノン若しくはその誘導体、テトラシアノアンスラキノジメタン若しくはその誘導体、フルオレノン誘導体、ジフェニルジシアノエチレン若しくはその誘導体、ジフェノキノン誘導体、又は8-ヒドロキシキノリン若しくはその誘導体の金属錯体、ポリキノリン若しくはその誘導体、ポリキノキサリン若しくはその誘導体、ポリフルオレン若しくはその誘導体などを挙げることができる。
電子注入層を構成する材料としては、発光層14の種類に応じて最適な材料が適宜選択される。電子注入層を構成する材料の例としては、アルカリ金属、アルカリ土類金属、アルカリ金属およびアルカリ土類金属のうちの1種類以上含む合金、アルカリ金属若しくはアルカリ土類金属の酸化物、アルカリ金属若しくはアルカリ土類金属のハロゲン化物、アルカリ金属若しくはアルカリ土類金属の炭酸塩、またはこれらの物質の混合物などを挙げることができる。アルカリ金属、アルカリ金属の酸化物、アルカリ金属のハロゲン化物、およびアルカリ金属の炭酸塩の例としては、リチウム、ナトリウム、カリウム、ルビジウム、セシウム、酸化リチウム、フッ化リチウム、酸化ナトリウム、フッ化ナトリウム、酸化カリウム、フッ化カリウム、酸化ルビジウム、フッ化ルビジウム、酸化セシウム、フッ化セシウム、炭酸リチウムなどを挙げることができる。また、アルカリ土類金属、アルカリ土類金属の酸化物、アルカリ土類金属のハロゲン化物、アルカリ土類金属の炭酸塩の例としては、マグネシウム、カルシウム、バリウム、ストロンチウム、酸化マグネシウム、フッ化マグネシウム、酸化カルシウム、フッ化カルシウム、酸化バリウム、フッ化バリウム、酸化ストロンチウム、フッ化ストロンチウム、炭酸マグネシウムなどを挙げることができる。電子注入層は、2層以上を積層した積層体で構成されてもよく、例えばLiF/Caなどを挙げることができる。電子注入層は、蒸着法、スパッタリング法、印刷法などにより形成される。電子注入層の膜厚としては、1nm~1μm程度が好ましい。
陰極の材料としては、仕事関数が小さく、発光層15への電子注入が容易で、電気伝導度の高い材料が好ましい。また陽極側から光を取出す構成の有機EL素子22では、発光層15から放たれる光を陰極で陽極に向けて反射させる、よって陰極の材料としては可視光反射率の高い材料が好ましい。陰極の材料には、例えばアルカリ金属、アルカリ土類金属、遷移金属および周期表13族金属などを用いることができる。陰極の材料としては、例えばリチウム、ナトリウム、カリウム、ルビジウム、セシウム、ベリリウム、マグネシウム、カルシウム、ストロンチウム、バリウム、アルミニウム、スカンジウム、バナジウム、亜鉛、イットリウム、インジウム、セリウム、サマリウム、ユーロピウム、テルビウム、イッテルビウムなどの金属、前記金属のうちの2種以上の合金、前記金属のうちの1種以上と、金、銀、白金、銅、マンガン、チタン、コバルト、ニッケル、タングステン、錫のうちの1種以上との合金、またはグラファイト若しくはグラファイト層間化合物などが用いられる。合金の例としては、マグネシウムと銀との合金、マグネシウムとインジウムとの合金、マグネシウムとアルミニウムとの合金、インジウムと銀との合金、リチウムとアルミニウムとの合金、リチウムとマグネシウムとの合金、リチウムとインジウムとの合金、カルシウムとアルミニウムとの合金などを挙げることができる。また、陰極としては導電性金属酸化物および導電性有機物などから成る透明導電性電極を用いることができる。具体的には、導電性金属酸化物の例として酸化インジウム、酸化亜鉛、酸化スズ、ITO、およびIZOを挙げることができる。導電性有機物の例としてポリアニリンもしくはその誘導体、ポリチオフェンもしくはその誘導体などを挙げることができる。なお、陰極は、2層以上を積層した積層体で構成されていてもよい。なお、電子注入層が陰極として用いられる場合もある。
2 陽極
3 正孔注入層
3a、13a 這い上がり部
4 正孔輸送層
5、15 発光層
6 陰極
7、17 隔壁
12 第1の電極(陽極)
13 低抵抗層(正孔注入層)
14 高抵抗層(正孔輸送層)
16 第2の電極(陰極)
18 凹部
19 絶縁膜
19a 開口
21 発光装置
22 有機EL素子
Claims (3)
- 支持基板と、支持基板上において複数の有機エレクトロルミネッセンス素子を区分けする隔壁と、隔壁同士の間である凹部に設けられる複数の有機エレクトロルミネッセンス素子とを備える発光装置であって、
各有機エレクトロルミネッセンス素子は、第1の電極と、第1の抵抗層と、第1の抵抗層よりも電気抵抗の高い第2の抵抗層と、発光層と、第2の電極とが、第1の電極が支持基板寄りとなるようにこの順に配置されて構成され、
第1の抵抗層は、隔壁の表面に沿って支持基板から離れる方向に這い上がる這い上がり部を有し、
第2の抵抗層は、隔壁を介在させて隣り合う一方の有機エレクトロルミネッセンス素子から他方の有機エレクトロルミネッセンス素子にまたがるように連続して設けられる、発光装置。 - 支持基板と、支持基板上において複数の有機エレクトロルミネッセンス素子を区分けする隔壁と、隔壁同士の間である凹部に設けられる複数の有機エレクトロルミネッセンス素子とを備える発光装置であり、有機エレクトロルミネッセンス素子は、第1の電極と、第1の抵抗層と、第1の抵抗層よりも電気抵抗が大きい第2の抵抗層と、発光層と、第2の電極とが、第1の電極が支持基板寄りとなるようにこの順に配置されて構成される、発光装置の製造方法において、
隔壁および第1の電極が設けられた支持基板を用意する工程と、
第1の抵抗層となる材料を含むインキを凹部に供給し、インキを固化して第1の抵抗層を形成する工程と、
複数の有機エレクトロルミネッセンス素子が形成されるべき全領域に亘ってインキが連なるように、第2の抵抗層となる材料を含むインキを前記全領域に供給し、これを固化して第2の抵抗層を形成する工程と、
発光層を形成する工程と、
第2の電極を形成する工程と
を含む、発光装置の製造方法。 - 第1の抵抗層を形成する工程が、ノズルプリンティング法により実施される、請求項2記載の発光装置の製造方法。
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JP2008235011A (ja) * | 2007-03-20 | 2008-10-02 | Sony Corp | 表示装置の製造方法 |
JP2009238708A (ja) * | 2008-03-28 | 2009-10-15 | Sumitomo Chemical Co Ltd | 有機エレクトロルミネッセンス装置の製造方法 |
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JP4094919B2 (ja) * | 2002-07-18 | 2008-06-04 | 東北パイオニア株式会社 | 有機発光表示装置 |
EP3413369A1 (en) * | 2003-09-19 | 2018-12-12 | Sony Corporation | Organic light emitting display |
JP2007005173A (ja) * | 2005-06-24 | 2007-01-11 | Toshiba Matsushita Display Technology Co Ltd | 表示装置 |
KR100659105B1 (ko) * | 2005-11-03 | 2006-12-19 | 삼성에스디아이 주식회사 | 유기 발광 디스플레이 장치 |
KR100846592B1 (ko) * | 2006-12-13 | 2008-07-16 | 삼성에스디아이 주식회사 | 유기 발광 디스플레이 장치 |
EP2175504A4 (en) | 2007-07-31 | 2012-08-22 | Sumitomo Chemical Co | ORGANIC ELECTROLUMINESCENE ELEMENT AND METHOD FOR THE PRODUCTION THEREOF |
US8076838B2 (en) * | 2007-10-31 | 2011-12-13 | Seiko Epson Corporation | Light emitting device |
-
2010
- 2010-02-25 JP JP2010039992A patent/JP4849175B2/ja not_active Expired - Fee Related
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2011
- 2011-02-21 EP EP11747291A patent/EP2541636A1/en not_active Withdrawn
- 2011-02-21 CN CN201180010703.7A patent/CN102770980B/zh not_active Expired - Fee Related
- 2011-02-21 KR KR1020127021918A patent/KR20130009952A/ko not_active Application Discontinuation
- 2011-02-21 WO PCT/JP2011/053693 patent/WO2011105330A1/ja active Application Filing
- 2011-02-21 US US13/580,777 patent/US9356251B2/en not_active Expired - Fee Related
- 2011-02-24 TW TW100106152A patent/TW201214821A/zh unknown
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WO2006085615A1 (ja) * | 2005-02-10 | 2006-08-17 | Tohoku Pioneer Corporation | 自発光素子および自発光パネル |
JP2008192311A (ja) | 2005-05-16 | 2008-08-21 | Sharp Corp | 有機エレクトロルミネッセンス素子の製造方法 |
JP2008235011A (ja) * | 2007-03-20 | 2008-10-02 | Sony Corp | 表示装置の製造方法 |
JP2009238708A (ja) * | 2008-03-28 | 2009-10-15 | Sumitomo Chemical Co Ltd | 有機エレクトロルミネッセンス装置の製造方法 |
Also Published As
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US9356251B2 (en) | 2016-05-31 |
CN102770980B (zh) | 2015-08-26 |
JP4849175B2 (ja) | 2012-01-11 |
US20130001607A1 (en) | 2013-01-03 |
CN102770980A (zh) | 2012-11-07 |
KR20130009952A (ko) | 2013-01-24 |
JP2011176190A (ja) | 2011-09-08 |
TW201214821A (en) | 2012-04-01 |
EP2541636A1 (en) | 2013-01-02 |
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