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WO2009013886A1 - 炭化珪素半導体装置およびその製造方法 - Google Patents

炭化珪素半導体装置およびその製造方法 Download PDF

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Publication number
WO2009013886A1
WO2009013886A1 PCT/JP2008/001933 JP2008001933W WO2009013886A1 WO 2009013886 A1 WO2009013886 A1 WO 2009013886A1 JP 2008001933 W JP2008001933 W JP 2008001933W WO 2009013886 A1 WO2009013886 A1 WO 2009013886A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicon carbide
carbide semiconductor
type impurity
impurity region
semiconductor device
Prior art date
Application number
PCT/JP2008/001933
Other languages
English (en)
French (fr)
Inventor
Masashi Hayashi
Kazuya Utsunomiya
Osamu Kusumoto
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Priority to JP2008559011A priority Critical patent/JP4291875B2/ja
Priority to CN2008800012073A priority patent/CN101578705B/zh
Priority to US12/516,858 priority patent/US7829374B2/en
Publication of WO2009013886A1 publication Critical patent/WO2009013886A1/ja

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Classifications

    • H01L29/45—
    • H01L29/7828—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
    • H01L21/0485—Ohmic electrodes
    • H01L29/66068—
    • H01L29/7802—
    • H01L29/086—
    • H01L29/1608—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

　本発明の半導体装置は、炭化珪素半導体層を有する炭化珪素半導体基板と、前記炭化珪素半導体層に設けられ、ｐ型不純物を含むｐ型不純物領域と、前記ｐ型不純物領域に電気的に接続されたｐ型オーミック電極と、前記ｐ型不純物領域に隣接して前記炭化珪素半導体層に設けられ、ｎ型不純物を含むｎ型不純物領域と、前記ｎ型不純物領域に電気的に接続されたｎ型オーミック電極とを備え、前記ｐ型オーミック電極は、ニッケル、アルミニウム、シリコンおよび炭素の合金を含み、前記ｎ型オーミック電極は、チタン、シリコンおよび炭素の合金を含む。
PCT/JP2008/001933 2007-07-20 2008-07-18 炭化珪素半導体装置およびその製造方法 WO2009013886A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008559011A JP4291875B2 (ja) 2007-07-20 2008-07-18 炭化珪素半導体装置およびその製造方法
CN2008800012073A CN101578705B (zh) 2007-07-20 2008-07-18 碳化硅半导体装置及其制造方法
US12/516,858 US7829374B2 (en) 2007-07-20 2008-07-18 Silicon carbide semiconductor device and method for manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-189209 2007-07-20
JP2007189209 2007-07-20

Publications (1)

Publication Number Publication Date
WO2009013886A1 true WO2009013886A1 (ja) 2009-01-29

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PCT/JP2008/001933 WO2009013886A1 (ja) 2007-07-20 2008-07-18 炭化珪素半導体装置およびその製造方法

Country Status (4)

Country Link
US (1) US7829374B2 (ja)
JP (1) JP4291875B2 (ja)
CN (1) CN101578705B (ja)
WO (1) WO2009013886A1 (ja)

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Publication number Priority date Publication date Assignee Title
WO2010116575A1 (ja) * 2009-03-30 2010-10-14 株式会社 東芝 半導体装置および半導体装置の製造方法
CN102227812A (zh) * 2009-10-05 2011-10-26 住友电气工业株式会社 半导体器件
US20120129343A1 (en) * 2009-10-05 2012-05-24 Sumitomo Electric Industries, Ltd. Method of manufacturing semiconductor device
JP2013084990A (ja) * 2013-01-11 2013-05-09 Toshiba Corp 半導体装置の製造方法
JPWO2013145023A1 (ja) * 2012-03-30 2015-08-03 株式会社日立製作所 電界効果型炭化珪素トランジスタ
JP2015198131A (ja) * 2014-03-31 2015-11-09 富士電機株式会社 炭化珪素半導体装置の製造方法
WO2016059912A1 (ja) * 2014-10-14 2016-04-21 住友電気工業株式会社 炭化珪素半導体装置の製造方法および炭化珪素半導体装置
JP2018067697A (ja) * 2016-10-21 2018-04-26 富士電機株式会社 半導体装置および半導体装置の製造方法

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JP5418466B2 (ja) * 2010-11-01 2014-02-19 住友電気工業株式会社 半導体装置およびその製造方法
JP5728954B2 (ja) * 2011-01-13 2015-06-03 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP5704003B2 (ja) * 2011-07-15 2015-04-22 住友電気工業株式会社 半導体装置の製造方法
JP5613640B2 (ja) * 2011-09-08 2014-10-29 株式会社東芝 半導体装置の製造方法
JP5809596B2 (ja) * 2012-05-07 2015-11-11 住友電気工業株式会社 半導体装置およびその製造方法
JP5949305B2 (ja) * 2012-08-13 2016-07-06 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP2014038899A (ja) 2012-08-13 2014-02-27 Sumitomo Electric Ind Ltd 炭化珪素半導体装置およびその製造方法
JP5577478B1 (ja) 2012-10-30 2014-08-20 パナソニック株式会社 半導体装置
WO2015080162A1 (ja) 2013-11-28 2015-06-04 ローム株式会社 半導体装置
JP6208106B2 (ja) * 2014-09-19 2017-10-04 株式会社東芝 半導体装置及びその製造方法
US9768085B1 (en) 2016-07-25 2017-09-19 International Business Machines Corporation Top contact resistance measurement in vertical FETs
JP7283053B2 (ja) * 2018-11-09 2023-05-30 富士電機株式会社 炭化珪素半導体装置、炭化珪素半導体組立体および炭化珪素半導体装置の製造方法
CN113228236B (zh) 2019-07-29 2024-08-09 富士电机株式会社 碳化硅半导体装置以及碳化硅半导体装置的制造方法
JP7427886B2 (ja) 2019-09-06 2024-02-06 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
US11309438B2 (en) 2019-12-10 2022-04-19 Fuji Electric Co., Ltd. Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
JP7371507B2 (ja) 2020-01-22 2023-10-31 富士電機株式会社 炭化珪素半導体装置の製造方法

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JP2010238738A (ja) * 2009-03-30 2010-10-21 Toshiba Corp 半導体装置および半導体装置の製造方法
US9437682B2 (en) 2009-03-30 2016-09-06 Kabushiki Kaisha Toshiba Semiconductor device and semiconductor device manufacturing method
WO2010116575A1 (ja) * 2009-03-30 2010-10-14 株式会社 東芝 半導体装置および半導体装置の製造方法
US20120129343A1 (en) * 2009-10-05 2012-05-24 Sumitomo Electric Industries, Ltd. Method of manufacturing semiconductor device
EP2487720A4 (en) * 2009-10-05 2014-01-01 Sumitomo Electric Industries SEMICONDUCTOR COMPONENT
US8846531B2 (en) * 2009-10-05 2014-09-30 Sumitomo Electric Industries, Ltd. Method of manufacturing an ohmic electrode containing titanium, aluminum and silicon on a silicon carbide surface
US8963163B2 (en) 2009-10-05 2015-02-24 Sumitomo Electric Industries, Ltd. Semiconductor device
EP2487720A1 (en) * 2009-10-05 2012-08-15 Sumitomo Electric Industries, Ltd. Semiconductor device
CN102227812A (zh) * 2009-10-05 2011-10-26 住友电气工业株式会社 半导体器件
JPWO2013145023A1 (ja) * 2012-03-30 2015-08-03 株式会社日立製作所 電界効果型炭化珪素トランジスタ
JP2013084990A (ja) * 2013-01-11 2013-05-09 Toshiba Corp 半導体装置の製造方法
JP2015198131A (ja) * 2014-03-31 2015-11-09 富士電機株式会社 炭化珪素半導体装置の製造方法
WO2016059912A1 (ja) * 2014-10-14 2016-04-21 住友電気工業株式会社 炭化珪素半導体装置の製造方法および炭化珪素半導体装置
JP2018067697A (ja) * 2016-10-21 2018-04-26 富士電機株式会社 半導体装置および半導体装置の製造方法

Also Published As

Publication number Publication date
JPWO2009013886A1 (ja) 2010-09-30
CN101578705B (zh) 2012-05-30
JP4291875B2 (ja) 2009-07-08
US7829374B2 (en) 2010-11-09
CN101578705A (zh) 2009-11-11
US20100055858A1 (en) 2010-03-04

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