UST954002I4 - Process for increasing mask life - Google Patents
Process for increasing mask life Download PDFInfo
- Publication number
- UST954002I4 UST954002I4 US05/659,177 US65917776A UST954002I4 US T954002 I4 UST954002 I4 US T954002I4 US 65917776 A US65917776 A US 65917776A US T954002 I4 UST954002 I4 US T954002I4
- Authority
- US
- United States
- Prior art keywords
- photomask
- chrome
- thin film
- approximately
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
a method for semiconductor device manufacture comprising the steps of, (a) repetitively aligning photomasks over a surface of a semiconductor substrate, said substrate having a layer of opaque material on said surface, said opaque material being adapted to receive and retain a photographic pattern; and (b) at least one of said steps employing a photomask of a particular construction, said particularly constructed photomask being placed in physical contact with said opaque material, said particularly constructed photomask essentially consisting of a planar glass substrate having a thickness of approximately 0.25 inches, one surface of said glass substrate having a thin film of chrome thereon, said thin film of chrome having a thickness of approximately 0.1 microns, said thin film of chrome having a photographic pattern formed therein, a layer of SiO2 fully covering said thin film of chrome and said surface of said glass substrate, said SiO2 layer having a thickness of approximately 3,000 angstroms, whereby the useful life of said particularly constructed photomask is materially extended and said method for semiconductor device manufacture is rendered less costly and more efficient.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/659,177 UST954002I4 (en) | 1974-01-24 | 1976-02-17 | Process for increasing mask life |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US43632074A | 1974-01-24 | 1974-01-24 | |
US05/659,177 UST954002I4 (en) | 1974-01-24 | 1976-02-17 | Process for increasing mask life |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US43632074A Continuation | 1974-01-24 | 1974-01-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
UST954002I4 true UST954002I4 (en) | 1977-01-04 |
Family
ID=27030912
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US05/659,177 Pending UST954002I4 (en) | 1974-01-24 | 1976-02-17 | Process for increasing mask life |
Country Status (1)
Country | Link |
---|---|
US (1) | UST954002I4 (en) |
-
1976
- 1976-02-17 US US05/659,177 patent/UST954002I4/en active Pending
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