JPS577971A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS577971A JPS577971A JP8308280A JP8308280A JPS577971A JP S577971 A JPS577971 A JP S577971A JP 8308280 A JP8308280 A JP 8308280A JP 8308280 A JP8308280 A JP 8308280A JP S577971 A JPS577971 A JP S577971A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- metal film
- films
- diffusion layer
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 5
- 238000009792 diffusion process Methods 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000010354 integration Effects 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To attain high integration of a semiconductor device by a method wherein a metal film is formed adhering on the surface of a diffusion layer formed in a silicon substrate, and a gate and a wiring between the gate and the metal film are formed with Mo films. CONSTITUTION:The diffusion layer 6 is formed in the silicon substrate 1 making a photo resist to cover the part to be corresponded to a gate oxide film 4 as a mask. Then the metal film 9 is formed on the region including on the diffusion layer 6 and excluding on the gate oxide film 4 by the lift off technique, and the Mo films 3 are formed selectively on the gate oxide film 4 and the metal film 9. The Mo films 3 are used both as the gate and the wiring to connect the gate to the metal film 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8308280A JPS577971A (en) | 1980-06-18 | 1980-06-18 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8308280A JPS577971A (en) | 1980-06-18 | 1980-06-18 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS577971A true JPS577971A (en) | 1982-01-16 |
Family
ID=13792252
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8308280A Pending JPS577971A (en) | 1980-06-18 | 1980-06-18 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS577971A (en) |
-
1980
- 1980-06-18 JP JP8308280A patent/JPS577971A/en active Pending
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