TWM609526U - Atomic layer deposition device for forming thin film on powder - Google Patents

Abstract

The invention provides an atomic layer deposition device for forming a thin film on powder, which mainly includes a vacuum chamber, a shaft sealing device and a driving unit. The shaft sealing device includes an outer tube body and an inner tube body, wherein the inner tube body is arranged in the accommodating space of the outer tube body. The driving unit drives the vacuum chamber to rotate through the outer tube to agitate the powder in the reaction space of the vacuum chamber. An air extraction line and an air intake line are arranged in the connection space of the inner tube body, wherein the air extraction line is used for extracting the gas in the reaction space. The gas inlet line is used to transport the non-reactive gas to the reaction space to raise the powder in the reaction space, and to transport the precursor gas to the reaction space, thereby forming a thin film with uniform thickness on the surface of the powder.

Description

Atomic layer deposition device for forming thin film on powder

This model relates to an atomic layer deposition device that forms a thin film on powder. It can rotate the vacuum chamber and deliver non-reactive gas to the vacuum chamber, so that the powder diffuses into the reaction space of the vacuum chamber and is beneficial to the surface of the powder. A thin film of uniform thickness is formed.

Nanoparticles are generally defined as particles smaller than 100 nanometers in at least one dimension. Nanoparticles and macroscopic substances have completely different physical and chemical properties. Generally speaking, the physical properties of macroscopic substances have nothing to do with their size, but nano particles are not the case. Nano particles have potential applications in biomedicine, optics, and electronics.

Quantum dots (Quantum Dot) are semiconductor nano-particles. The currently studied semiconductor materials are II-VI materials, such as ZnS, CdS, CdSe, etc., of which CdSe has attracted the most attention. The size of quantum dots is usually between 2 and 50 nanometers. After the quantum dots are irradiated with ultraviolet light, the electrons in the quantum dots will absorb energy and transition from the valence band to the conduction band. When the excited electron returns from the conduction band to the valence band, it releases energy through light emission.

The energy gap of a quantum dot is related to the size. The larger the size of the quantum dot, the smaller the energy gap, and will emit light with a longer wavelength after irradiation. The smaller the size of the quantum dot, the larger the energy gap, and the wavelength will be emitted after irradiation. Shorter light. For example, quantum dots of 5 to 6 nanometers emit orange or red light, while quantum dots of 2 to 3 nanometers emit blue or green light. Of course, the light color depends on the material composition of the quantum dots.

Light-emitting diodes (LEDs) using quantum dots produce light that can be close to a continuous spectrum, have high color rendering properties, and help improve the luminous quality of the light-emitting diodes. In addition, the wavelength of the emitted light can be adjusted by changing the size of the quantum dots, making the quantum dots the development focus of a new generation of light-emitting devices and displays.

Although quantum dots have the above-mentioned advantages and characteristics, they are prone to agglomeration during the application or manufacturing process. In addition, quantum dots have high surface activity, and easily react with air and water vapor, thereby shortening the lifespan of quantum dots.

Specifically, when the quantum dots are made into a sealant for light-emitting diodes, agglomeration effect may occur, which reduces the optical performance of the quantum dots. In addition, after quantum dots are made into the sealant of light-emitting diodes, external oxygen or moisture may still pass through the sealant and contact the surface of the quantum dots, causing the quantum dots to oxidize and affect the quantum dots and light-emitting diodes. The effectiveness or service life of the product. Surface defects and dangling bonds of quantum dots may also cause nonradiative recombination, which also affects the luminous efficiency of quantum dots.

At present, the industry mainly uses atomic layer deposition (ALD) to form a nanometer-thick film on the surface of quantum dots, or form a multilayer film on the surface of quantum dots to form a quantum well structure.

Atomic layer deposition can form a thin film with uniform thickness on the substrate, and can effectively control the thickness of the thin film. In theory, it is also suitable for three-dimensional quantum dots. When the quantum dots are placed on the carrier plate, there will be contact points between adjacent quantum dots, so that the precursor gas deposited by the atomic layer cannot contact these contact points, and it is impossible to form a uniform thickness on the surface of all nano particles.的膜。 The film.

In order to solve the above-mentioned problems faced by the prior art, the present invention proposes an atomic layer deposition device that forms a thin film on powder, which can fully agitate the powder during the atomic layer deposition process, so that the powder fills the entire reaction space of the vacuum chamber and reduces The points of contact between the powders facilitate the formation of a thin film of uniform thickness on the surface of each powder.

An object of the present invention is to provide an atomic layer deposition device for forming a thin film on powder, which mainly includes a driving unit, a shaft sealing device and a vacuum chamber, wherein the driving unit is connected through the shaft sealing device and drives the vacuum chamber to rotate. The shaft sealing device includes an outer tube body and an inner tube body, wherein the inner tube body is located in the accommodating space of the outer tube body. The driving unit is connected to the vacuum chamber through the outer tube body, and drives the vacuum chamber to rotate through the outer tube body.

The inner tube body includes a connection space, and at least one gas extraction line, at least one gas inlet line, at least one non-reactive gas delivery line, at least one heater and/or at least one temperature sensing unit can be arranged in the inner tube body. Connect the space. The air extraction line is used to extract the gas in the reaction space of the vacuum chamber, and the air intake line is used to transport the precursor gas and/or non-reactive gas to the reaction space to form a film on the surface of the powder. The driving unit can drive the vacuum chamber to rotate, and the air inlet pipeline can increase the flow of non-reactive gas delivered to the vacuum chamber, so that the powder diffuses to various areas in the reaction space to reduce the contact points between the various powders. It is beneficial to form a thin film with uniform thickness on the surface of each powder. In addition, when the driving unit drives the outer tube body and the vacuum chamber to rotate, the inner tube body and the internal gas extraction pipeline, inlet pipeline and/or non-reactive gas delivery pipeline will remain stationary to stabilize the non-reactive gas delivered to the vacuum chamber. And precursor gas.

An object of the present invention is to provide an atomic layer deposition device for forming a thin film on powder, which mainly includes a driving unit, a shaft sealing device and a vacuum chamber, wherein the driving unit is connected to the vacuum chamber through the shaft sealing device. In addition, a heating device is covered on the side surface of the vacuum cavity and used to heat the reaction space of the vacuum cavity to increase the temperature in the reaction space. In addition, during the heating process, the driving unit will drive the vacuum chamber to rotate and fully stir the powder in the reaction space, so that all the powder in the reaction space has a similar temperature.

An object of the present invention is to provide an atomic layer deposition device for forming a thin film on powder, which is mainly provided with a driving unit, a shaft sealing device and a vacuum chamber on a carrier plate, wherein the carrier plate is connected to one through at least one connecting shaft. The fixed frame rotates relative to the fixed frame with the connecting shaft as the axis. When the bearing plate rotates, the drive unit, the shaft seal device and the vacuum chamber are rotated, and the inclination angle of the vacuum chamber can be adjusted according to the requirements of the manufacturing process, so as to facilitate the formation of a thin film of uniform thickness on the surface of each powder.

In order to achieve the above-mentioned purpose, the present invention proposes an atomic layer deposition device for forming a thin film on powder, which includes: a vacuum chamber, including a cover plate and a cavity, wherein the cover plate covers the cavity and is placed on the cover plate and the cavity. A reaction space is formed between the bodies for accommodating a plurality of powders; a shaft sealing device includes an outer tube body and an inner tube body, wherein the outer tube body has an accommodating space for accommodating the inner tube body, and The tube body has a connecting space; a driving unit, which is connected to the vacuum chamber through the outer tube body of the shaft sealing device, and drives the vacuum chamber to rotate relative to the inner tube body through the outer tube body; a filter unit is arranged in the inner tube body Or on the cavity; at least one gas extraction line located in the connecting space of the inner tube body, wherein the gas extraction line is fluidly connected to the reaction space of the vacuum chamber via the filter unit, and is used to extract a gas in the reaction space; and at least one inlet The gas pipeline is located in the connection space of the inner tube body, wherein the gas inlet pipeline is fluidly connected to the reaction space of the vacuum chamber via the filter unit, and is used to transport a precursor or a non-reactive gas to the reaction space, wherein the non-reactive gas is used for Blow the powder in the reaction space.

In the atomic layer deposition device for forming a thin film on powder, the gas inlet pipeline includes at least one non-reactive gas delivery pipeline located in the inner tube, fluidly connected to the reaction space of the vacuum chamber, and used to deliver the non-reactive gas to the vacuum chamber In the reaction space of the body, to blow the powder in the reaction space.

In the atomic layer deposition device for forming a thin film on powder, the shaft seal device is a magnetic fluid shaft seal.

The atomic layer deposition device for forming a thin film on powder includes at least one gear connecting the outer tube body of the driving unit and the shaft sealing device. The driving unit drives the outer tube body and the vacuum chamber of the shaft sealing device relative to the inner tube through the gear. Body rotation.

The atomic layer deposition device for forming a thin film on powder includes a gear cover plate for covering the gear.

In the atomic layer deposition device for forming a thin film on powder, a monitoring wafer is arranged on the inner surface of the cover plate.

The atomic layer deposition device for forming a thin film on powder includes a viewing hole on the cover plate.

In the atomic layer deposition device for forming a thin film on powder, the filter unit is located at one end of the inner tube body connected to the reaction space.

The atomic layer deposition device for forming a thin film on powder includes a heater and a temperature sensing unit arranged in the inner tube body. The heater is used to heat the connection space of the inner tube body and the reaction space of the vacuum chamber, and the temperature The sensing unit is used to measure the temperature of the connecting space of the inner tube body.

The atomic layer deposition device for forming a thin film on powder includes at least one heating device located around the vacuum cavity and used for heating the reaction space of the vacuum cavity.

The atomic layer deposition device for forming a thin film on powder includes a carrying plate and at least one fixing frame. The carrying plate is used to carry the driving unit, the vacuum chamber and the shaft sealing device. The carrying plate is connected to the fixing frame through at least one connecting shaft. , And use the connecting shaft as the axis to rotate relative to the fixed frame to change the elevation angle of the drive unit, the vacuum chamber and the shaft seal device.

In the atomic layer deposition device for forming a thin film on powder, the inner tube extends from the accommodating space of the outer tube to the reaction space of the vacuum chamber, and a tube protrusion is formed in the reaction space.

Please refer to FIG. 1, FIG. 2 and FIG. 3, which are respectively a three-dimensional schematic diagram, a schematic cross-sectional schematic diagram, and a schematic cross-sectional schematic diagram of a partial structure of an atomic layer deposition apparatus for forming a thin film on a powder. As shown in the figure, the atomic layer deposition apparatus 10 for forming a thin film on powder mainly includes a vacuum chamber 11, a shaft sealing device 13 and a driving unit 15. The driving unit 15 is connected to the vacuum chamber 11 through the shaft sealing device 13, and Drive the vacuum chamber 11 to rotate.

The vacuum cavity 11 has a reaction space 12 for accommodating a plurality of powders 121. The powders 121 may be Quantum Dots, such as II-VI semiconductor materials such as ZnS, CdS, and CdSe, which are formed in the quantum dots. The above film can be aluminum oxide (Al2O3). The vacuum chamber 11 may include a cover 111 and a cavity 113, wherein an inner surface 1111 of the cover 111 is used to cover the cavity 113, and a reaction space 12 is formed between the two. In addition, a viewing hole 117 can also be provided on the cover 111, through which the user can view the powder 121 in the reaction space 12. For example, a perforation can be provided on the cover 111 and heat-resistant glass can be provided on the perforation to form a viewing hole 117 on the cover 111.

In an embodiment of the present invention, a monitoring wafer 115 may be disposed on the inner surface 1111 of the cover plate 111, and when the cover plate 111 covers the cavity 113, the monitoring wafer 115 will be located in the reaction space 12. When atomic layer deposition is performed in the reaction space 12, a thin film is formed on the surface of the monitoring wafer 115. In practical applications, the film thickness on the surface of the monitoring wafer 115 and the film thickness on the surface of the powder 121 can be further measured, and the relationship between the two can be calculated. Then, the film thickness on the surface of the monitoring wafer 115 can be measured to calculate the film thickness on the surface of the powder 121.

The shaft sealing device 13 includes an outer tube body 131 and an inner tube body 133. The outer tube body 131 has a accommodating space 132, and the inner tube body 133 has a connecting space 134, such as the outer tube body 131 and the inner tube body. 133 can be a hollow cylinder. The accommodating space 132 of the outer tube body 131 is used for accommodating the inner tube body 133, wherein the outer tube body 131 and the inner tube body 133 are coaxially arranged.

In an embodiment of the present invention, the shaft seal device 13 may be a common shaft seal, which is mainly used to isolate the reaction space 12 of the vacuum chamber 11 from the external space, so as to maintain the vacuum of the reaction space 12. In another embodiment of the present invention, the shaft seal device 13 may be a magnetic fluid shaft seal, and includes a plurality of bearings 137, at least one permanent magnet 135, at least one pole piece 136 and at least one magnetic fluid 138, wherein the bearing 137, permanent The magnet 135, the pole piece 136 and the magnetic fluid 138 are arranged in the accommodating space 132 between the outer tube body 131 and the inner tube body 133.

Specifically, the bearing 137 is sleeved on the outer surface of the inner tube body 133 and is located between the inner tube body 133 and the outer tube body 131 so that the outer tube body 131 can rotate relative to the inner tube body 133. The permanent magnet 135 is arranged on the inner surface of the outer tube body 131 and is located between the two bearings 137. The two magnetic pole pieces 136 are arranged on the inner surface of the outer tube body 131 and are respectively located between the permanent magnet 135 and the two bearings 137. There is a gap between the pole piece 136 and the outer surface of the inner tube body 133, and the magnetic fluid 138 is arranged in the gap. The above-mentioned structure of the magnetic fluid shaft seal is only an embodiment of the present invention, and is not a limitation of the scope of rights of the present invention.

The driving unit 15 is dynamically connected to the vacuum chamber 11 through the outer tube body 131, and drives the vacuum chamber 11 to rotate through the outer tube body 131. In addition, the driving unit 15 is not connected to the inner tube body 133, so when the driving unit 15 drives the outer tube body 131 and the vacuum chamber 11 to rotate, the inner tube body 133 will not rotate with it.

The driving unit 15 can drive the outer tube body 131 and the vacuum chamber 11 to continuously rotate in the same direction, for example, in a clockwise or counterclockwise direction. In different embodiments, the driving unit 15 can drive the outer tube body 131 and the vacuum chamber 11 to rotate a specific angle in a clockwise direction, and then rotate a specific angle in a counterclockwise direction, for example, the specific angle may be 360 degrees. When the vacuum chamber 11 rotates, it will agitate the powder 121 in the reaction space 12 to facilitate contact between the powder 121 and the precursor gas.

In an embodiment of the present invention, the driving unit 15 may be a motor, which is connected to the outer tube body 131 through at least one gear 14 and drives the outer tube body 131 and the vacuum chamber 11 to rotate relative to the inner tube body 133 via the gear 14. The driving unit 15 can be connected to a first gear 141, and the outer tube body 131 is connected to a second gear 143, wherein the first gear 141 meshes with the second gear 143. When the driving unit 15 drives the first gear 141 to rotate, the first gear 141 will drive the meshed second gear 143, the outer tube 131 and the vacuum chamber 11 to rotate. In an embodiment of the present invention, the first gear 141 and the second gear 143 may be helical gears.

The connecting space 134 of the inner tube body 133 can be provided with at least one gas extraction line 171, at least one gas inlet line 173, at least one non-reactive gas delivery line 175, a heater 177 and/or a temperature sensing unit 179, as shown in FIG. 2 and Figure 3.

The gas extraction line 171 is fluidly connected to the reaction space 12 of the vacuum chamber 11 and is used to extract gas in the reaction space 12 so that the reaction space 12 is in a vacuum state for subsequent atomic layer deposition processes. Specifically, the pumping line 171 can be connected to a pump, and the gas in the reaction space 12 can be pumped out through the pump.

The gas inlet line 173 is fluidly connected to the reaction space 12 of the vacuum chamber 11, and is used to transport a precursor or a non-reactive gas to the reaction space 12, where the non-reactive gas can be an inert gas such as nitrogen or argon. For example, the gas inlet line 173 may be connected to a precursor storage tank and a non-reactive gas storage tank through the valve assembly, and the precursor gas can be transported into the reaction space 12 through the valve assembly, so that the precursor gas is deposited on the surface of the powder 121. In practical applications, the gas inlet line 173 may transport a carrier gas and precursor gas into the reaction space 12 together. Then, the non-reactive gas is delivered into the reaction space 12 through the valve assembly to remove the precursor gas in the reaction space 12. In an embodiment of the present invention, the gas inlet pipeline 173 can be connected to a plurality of branch pipelines, and different precursor gases can be sequentially delivered into the reaction space 12 through each branch pipeline.

In addition, the flow rate of the non-reactive gas delivered by the gas inlet line 173 to the reaction space 12 can be increased, and the powder 121 in the reaction space 12 can be blown through the non-reactive gas, so that the powder 121 is driven by the non-reactive gas and diffuses into the reaction space. 12 various areas.

In an embodiment of the present invention, the gas inlet line 173 may include at least one non-reactive gas delivery line 175 fluidly connected to the reaction space 12 of the vacuum chamber 11, and is used to deliver the non-reactive gas to the reaction space 12, for example, non-reactive gas delivery The pipeline 175 can be connected to a nitrogen storage tank through the valve assembly, and transport nitrogen to the reaction space 12 through the valve assembly. The non-reactive gas is used to blow the powder 121 in the reaction space 12, and cooperate with the driving unit 15 to drive the vacuum chamber 11 to rotate, which can effectively and uniformly stir the powder 121 in the reaction space 12, and is beneficial to the powder 121 in each powder 121. A thin film of uniform thickness is deposited on the surface.

Both the gas inlet line 173 and the non-reactive gas delivery line 175 of the atomic layer deposition apparatus 10 that form a thin film on powder are used to deliver the non-reactive gas to the reaction space 12, and the flow rate of the non-reactive gas delivered by the gas inlet line 173 is relatively low. Small, mainly used to remove the precursor gas in the reaction space 12, while the flow of the non-reactive gas transported by the non-reactive gas delivery line 175 is relatively large, and is mainly used to blow the powder 121 in the reaction space 12. In addition, the non-reactive gas transmitted by the gas inlet line 173 and the non-reactive gas delivery line 175 may be the same or different gases.

Specifically, the time points at which the gas inlet line 173 and the non-reactive gas conveying line 175 convey the non-reactive gas to the reaction space 12 are different. Therefore, in actual applications, the non-reactive gas conveying line 175 may not be provided, and the gas inlet line 173 is adjusted The flow of non-reactive gas delivered at different time points. When removing the precursor gas in the reaction space 12, the flow rate of the non-reactive gas delivered by the gas inlet line 173 to the reaction space 12 can be reduced, and when the powder 121 in the reaction space 12 is to be blown, the gas inlet line 173 is added to deliver The flow rate of the non-reactive gas to the reaction space 12.

In an embodiment of the present invention, a filter unit may be provided on the inner tube body 133 or the cavity 113, for example, a filter unit 139 is provided at one end connected to the reaction space 12, wherein the suction line 171 is fluidly connected to the reaction space 12 via the filter unit 139 , And the gas in the reaction space 12 is extracted through the filter unit 139. The filtering unit 139 is mainly used to filter the powder 121 in the reaction space 12 to prevent the powder 121 from entering the air extraction line 171 during the air extraction process, which would cause the loss of the powder 121.

The gas inlet line 173 may be fluidly connected to the reaction space 12 via the filter unit 139 and transport the precursor gas or non-reactive gas to the reaction space 12 via the filter unit 139. In addition, the non-reactive gas delivery line 175 may be fluidly connected to the reaction space 12 via the filter unit 139, and the non-reactive gas can be delivered to the reaction space 12 via the filter unit 139. The gas inlet line 173 and the non-reactive gas delivery line 175 are mainly used to deliver gas to the reaction space 12 instead of extracting the gas in the reaction space 12. The powder 121 in the reaction space 12 is less likely to enter the inlet line 173 and the non-reactive gas delivery line 175, so the inlet line 173 and the non-reactive gas delivery line 175 can transport the gas into the reaction space 12 without passing through the filter unit 139, and The gas is directly delivered to the reaction space 12.

The heater 177 is used to heat the connection space 134 and the inner tube body 133, and heat the air extraction line 171, the air inlet line 173 and/or the non-reactive gas delivery line 175 in the inner tube body 133 through the heater 177 to improve air extraction The temperature of the gas in the pipeline 171, the gas inlet pipeline 173, and/or the non-reactive gas delivery pipeline 175. For example, the temperature of the non-reactive gas and/or the precursor gas delivered by the gas inlet line 173 to the reaction space 12 can be increased, and the temperature of the non-reactive gas delivered by the non-reactive gas delivery line 175 to the reaction space 12 can be increased. When the non-reactive gas and/or precursor gas enters the reaction space 12, the temperature of the reaction space 12 will not drop or change significantly. In addition, the temperature of the heater 177 or the connecting space 134 can be measured through the temperature sensing unit 179 to know the working state of the heater 177. Of course, another heating device 21 is usually arranged inside, outside or around the vacuum chamber 11, as shown in FIG. 4, where the heating device 21 is adjacent to or in contact with the vacuum chamber 11 and is used to heat the vacuum chamber 11 and the reaction space 12 .

When the driving unit 15 drives the outer tube body 131 and the vacuum chamber 11 to rotate, the inner tube body 133 and the internal gas extraction line 171, the gas inlet line 173 and/or the non-reactive gas delivery line 175 will not rotate with it, which is advantageous The non-reactive gas and precursor gas are stably delivered to the reaction space 12.

In an embodiment of the present invention, the atomic layer deposition apparatus 10 for forming a thin film on powder may also include a carrier plate 191 and at least one fixing frame 193, wherein the carrier plate 191 may be a plate for supporting the driving unit 15, Vacuum chamber 11 and shaft sealing device 13. For example, the carrier board 191 is connected to the driving unit 15, and the shaft sealing device 13 and the vacuum chamber 11 are connected through the driving unit 15. In addition, the shaft sealing device 13 and/or the vacuum chamber 11 can also be connected to the carrying plate 191 through at least one support frame to improve the stability of the connection.

The carrying plate 191 can be connected to the fixing frame 193 through at least one connecting shaft 195, wherein the number of the fixing frame 193 can be two, and the fixing frames 193 can be respectively arranged on both sides of the carrying plate 191. The bearing plate 191 can rotate relative to the fixing frame 193 with the shaft 195 as the axis to change the elevation angle of the driving unit 15, the shaft sealing device 13, and the vacuum chamber 11, so as to facilitate the formation of a thin film of uniform thickness on the surface of each powder 121.

Please refer to FIGS. 4 and 5, which are respectively a three-dimensional schematic diagram and a cross-sectional schematic diagram of another embodiment of the atomic layer deposition apparatus for forming a thin film on powder. As shown in the figure, the atomic layer deposition device 20 for forming a thin film on powder mainly includes a vacuum chamber 11, a shaft sealing device 13, a driving unit 15, a heating device 21 and a gear cover 23, in which the driving unit 15 penetrates The shaft sealing device 13 is connected to the vacuum chamber 11 and drives the vacuum chamber 11 to rotate.

The heating device 21 is arranged around the side surface of the vacuum cavity 11 and is used to heat the vacuum cavity 11 and the reaction space 12. In an embodiment of the present invention, the heating device 21 can be connected to the carrier board 191 through the connecting frame 211, and the driving unit 15 drives the vacuum chamber 11 to rotate relative to the heating device 21.

The gear cover 23 is used to cover the gear 14 to prevent the gear 14 from contacting external sources of pollution, and also prevent the operator from accidentally touching the gear 14 in operation and getting injured. The gear cover 23 is designed to be detachable, and the gear cover 23 can be removed during repair or maintenance.

In the above-mentioned embodiment of the present invention, one end of the inner tube body 133 of the shaft sealing device 13 connected to the reaction space 12 is attached to the inner surface of the vacuum chamber 11. In application, as shown in FIG. 6, the inner tube 133 can extend from the accommodating space 132 of the outer tube 131 to the reaction space 12 of the vacuum chamber 11, and a tube protrusion 1311 is formed in the reaction space 12.

The above is only one of the preferred embodiments of the present invention, and is not intended to limit the scope of implementation of the present invention, that is, all the equivalent changes and changes in the shape, structure, characteristics and spirit described in the scope of the patent application of the present invention Modifications should be included in the scope of the patent application for this new model.

10: Atomic layer deposition device that forms a thin film on powder 11: Vacuum chamber 111: cover 1111: inner surface 113: Cavity 115: monitor wafer 117: View hole 12: reaction space 121: powder 13: Shaft seal device 131: Outer tube body 1311: Convex part of tube body 132: accommodating space 133: inner tube body 134: Connecting Space 135: permanent magnet 136: Magnetic pole piece 137: Bearing 138: Magnetic fluid 139: filter unit 14: Gear 141: First Gear 143: second gear 15: drive unit 171: Extraction line 173: intake line 175: Non-reactive gas pipeline 177: heater 179: temperature sensing unit 191: Carrier Board 193: fixed frame 195: connecting shaft 20: Atomic layer deposition device that forms a thin film on powder 21: heating device 211: connecting frame 23: Gear cover

[Figure 1] is a three-dimensional schematic diagram of an embodiment of a new type of atomic layer deposition apparatus for forming a thin film on powder.

[Figure 2] is a schematic cross-sectional view of an embodiment of the new type of atomic layer deposition apparatus for forming a thin film on powder.

[Fig. 3] is a schematic cross-sectional view of an example of a partial structure of a new type of atomic layer deposition apparatus for forming a thin film on powder.

[Figure 4] is a three-dimensional schematic diagram of another embodiment of the new type of atomic layer deposition apparatus for forming a thin film on powder.

[Figure 5] is a schematic cross-sectional view of another embodiment of the new type of atomic layer deposition apparatus for forming a thin film on powder.

[Figure 6] is a three-dimensional schematic diagram of another embodiment of the new type of atomic layer deposition apparatus for forming a thin film on powder.

10: Atomic layer deposition device that forms a thin film on powder

11: Vacuum chamber

111: cover

113: Cavity

117: View hole

13: Shaft seal device

14: Gear

141: First Gear

143: second gear

15: drive unit

191: Carrier Board

193: fixed frame

195: connecting shaft

Claims (10)

An atomic layer deposition device for forming a thin film on powder, including: A vacuum chamber includes a cover plate and a cavity, wherein the cover plate covers the cavity, and a reaction space is formed between the cover plate and the cavity for accommodating a plurality of powders; A shaft sealing device includes an outer tube body and an inner tube body, wherein the outer tube body has an accommodating space for accommodating the inner tube body, and the inner tube body has a connecting space; A driving unit connected to the vacuum chamber through the outer tube body of the shaft sealing device, and drives the vacuum chamber to rotate relative to the inner tube body through the outer tube body; A filter unit arranged on the inner tube body or the cavity; At least one gas extraction line located in the connection space of the inner tube body, wherein the gas extraction line is fluidly connected to the reaction space of the vacuum chamber via the filter unit, and is used to extract a gas in the reaction space; and At least one air inlet line is located in the connecting space of the inner tube, wherein the air inlet line is fluidly connected to the reaction space of the vacuum chamber via the filter unit, and is used to deliver a precursor or a non-reactive gas to In the reaction space, the non-reactive gas is used to blow the powder in the reaction space. The atomic layer deposition apparatus for forming a thin film on powder according to claim 1, wherein the gas inlet line includes at least one non-reactive gas delivery line located in the connecting space of the inner tube body and fluidly connected to the vacuum chamber The reaction space is used for conveying the non-reactive gas into the reaction space of the vacuum cavity to blow the powder in the reaction space. The atomic layer deposition apparatus for forming a thin film on powder according to claim 1, wherein the shaft seal device is a magnetic fluid shaft seal. The atomic layer deposition apparatus for forming a thin film on powder according to claim 1, comprising at least one gear connecting the driving unit and the outer tube body of the shaft sealing device, and the driving unit drives the shaft sealing device through the gear The outer tube body and the vacuum cavity rotate relative to the inner tube body. The atomic layer deposition apparatus for forming a thin film on powder according to claim 1, wherein the inner tube body extends from the accommodating space of the outer tube body to the reaction space of the vacuum chamber, and is in the reaction space A convex part of the tube is formed. The atomic layer deposition apparatus for forming a thin film on powder according to claim 1, wherein a monitoring wafer is provided on the inner surface of the cover plate. The atomic layer deposition apparatus for forming a thin film on powder as described in claim 6, including a viewing hole on the cover plate. The atomic layer deposition apparatus for forming a thin film on powder according to claim 1, wherein the filter unit is located at one end of the inner tube body connected to the reaction space. The atomic layer deposition apparatus for forming a thin film on powder according to claim 1, comprising a heater and a temperature sensing unit disposed on the inner tube body, and the heater is used for heating the connection space of the inner tube body and the The reaction space of the vacuum chamber, and the temperature sensing unit is used to measure the temperature of the connection space of the inner tube. The atomic layer deposition apparatus for forming a thin film on powder according to claim 1, including at least one heating device located around the vacuum chamber and used for heating the reaction space of the vacuum chamber.

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