[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

TW200801209A - Copper physical vapor deposition targets and methods of making copper physical vapor deposition targets - Google Patents

Copper physical vapor deposition targets and methods of making copper physical vapor deposition targets

Info

Publication number
TW200801209A
TW200801209A TW096115431A TW96115431A TW200801209A TW 200801209 A TW200801209 A TW 200801209A TW 096115431 A TW096115431 A TW 096115431A TW 96115431 A TW96115431 A TW 96115431A TW 200801209 A TW200801209 A TW 200801209A
Authority
TW
Taiwan
Prior art keywords
vapor deposition
physical vapor
copper
copper material
deposition targets
Prior art date
Application number
TW096115431A
Other languages
English (en)
Inventor
Wuwen Yi
Susan D Strothers
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Publication of TW200801209A publication Critical patent/TW200801209A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
TW096115431A 2006-05-01 2007-04-30 Copper physical vapor deposition targets and methods of making copper physical vapor deposition targets TW200801209A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/415,621 US20070251818A1 (en) 2006-05-01 2006-05-01 Copper physical vapor deposition targets and methods of making copper physical vapor deposition targets

Publications (1)

Publication Number Publication Date
TW200801209A true TW200801209A (en) 2008-01-01

Family

ID=38445688

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096115431A TW200801209A (en) 2006-05-01 2007-04-30 Copper physical vapor deposition targets and methods of making copper physical vapor deposition targets

Country Status (5)

Country Link
US (2) US20070251818A1 (zh)
JP (1) JP5325096B2 (zh)
KR (1) KR20080113124A (zh)
TW (1) TW200801209A (zh)
WO (1) WO2007130888A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105814233A (zh) * 2013-12-13 2016-07-27 普莱克斯 S.T.技术有限公司 扩散结合的铜溅射靶组件

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8791018B2 (en) 2006-12-19 2014-07-29 Spansion Llc Method of depositing copper using physical vapor deposition
JP5464352B2 (ja) * 2010-03-05 2014-04-09 三菱マテリアル株式会社 均一かつ微細結晶組織を有する高純度銅加工材の製造方法
US9773651B2 (en) 2012-01-12 2017-09-26 Jx Nippon Mining & Metals Corporation High-purity copper sputtering target
CN102862439A (zh) * 2012-08-31 2013-01-09 金星铜集团有限公司 一种喷丸法制造仿铸铜效果艺术品的方法
JP6067927B2 (ja) * 2014-03-31 2017-01-25 Ｊｘ金属株式会社 銅又は銅合金スパッタリングターゲット
CN104946923B (zh) * 2015-06-30 2017-02-01 浙江工业大学 一种铜基复合材料及其制备方法
US11035036B2 (en) * 2018-02-01 2021-06-15 Honeywell International Inc. Method of forming copper alloy sputtering targets with refined shape and microstructure
CN114892135B (zh) * 2022-05-24 2023-09-08 宁波江丰电子材料股份有限公司 一种高纯铜靶材及其制备方法与应用

Family Cites Families (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3497402A (en) * 1966-02-03 1970-02-24 Nat Res Corp Stabilized grain-size tantalum alloy
US3653981A (en) * 1968-10-24 1972-04-04 Nippon Steel Corp Method for making ferritic stainless steel sheet having excellent workability
US3616282A (en) * 1968-11-14 1971-10-26 Hewlett Packard Co Method of producing thin-film circuit elements
US4000055A (en) * 1972-01-14 1976-12-28 Western Electric Company, Inc. Method of depositing nitrogen-doped beta tantalum
BE795763A (fr) * 1972-02-22 1973-08-22 Westinghouse Electric Corp Alliages ferreux et procedes pour fabriquer de tels alliages
DE2429434B2 (de) * 1974-06-19 1979-10-04 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung von Widerständen und Kondensatoren in Dunnschichtschaltungen
DE3142541C2 (de) * 1981-10-27 1986-07-31 Demetron Gesellschaft für Elektronik-Werkstoffe mbH, 6540 Hanau Mehrstofflegierung für Targets von Katodenzerstäubungsanlagen
US4374717A (en) * 1981-11-05 1983-02-22 General Motors Corporation Plasma polymerized interfacial coatings for improved adhesion of sputtered bright metal on plastic
DE3246361A1 (de) * 1982-02-27 1983-09-08 Philips Patentverwaltung Gmbh, 2000 Hamburg Kohlenstoff enthaltende gleitschicht
JPS58157917A (ja) * 1982-03-15 1983-09-20 Kawasaki Steel Corp 磁気特性の優れた一方向性珪素鋼板の製造方法
US4589932A (en) * 1983-02-03 1986-05-20 Aluminum Company Of America Aluminum 6XXX alloy products of high strength and toughness having stable response to high temperature artificial aging treatments and method for producing
JPS6066425A (ja) * 1983-09-22 1985-04-16 Nippon Telegr & Teleph Corp <Ntt> Ｌｓｉ電極用の高純度モリブデンタ−ゲツトならびに高純度モリブデンシリサイドタ−ゲツトおよびその製造方法
US4663120A (en) * 1985-04-15 1987-05-05 Gte Products Corporation Refractory metal silicide sputtering target
US4889745A (en) * 1986-11-28 1989-12-26 Japan As Represented By Director General Of Agency Of Industrial Science And Technology Method for reactive preparation of a shaped body of inorganic compound of metal
JPS63216966A (ja) * 1987-03-06 1988-09-09 Toshiba Corp スパツタタ−ゲツト
DE3712281A1 (de) * 1987-04-10 1988-10-27 Heraeus Gmbh W C Verfahren zur herstellung von hochduktilem tantal-halbzeug
US4762558A (en) * 1987-05-15 1988-08-09 Rensselaer Polytechnic Institute Production of reactive sintered nickel aluminide material
US4883721A (en) * 1987-07-24 1989-11-28 Guardian Industries Corporation Multi-layer low emissivity thin film coating
US4960163A (en) * 1988-11-21 1990-10-02 Aluminum Company Of America Fine grain casting by mechanical stirring
US5468401A (en) * 1989-06-16 1995-11-21 Chem-Trend, Incorporated Carrier-free metalworking lubricant and method of making and using same
US5074907A (en) * 1989-08-16 1991-12-24 General Electric Company Method for developing enhanced texture in titanium alloys, and articles made thereby
US5194101A (en) * 1990-03-16 1993-03-16 Westinghouse Electric Corp. Zircaloy-4 processing for uniform and nodular corrosion resistance
US5409517A (en) * 1990-05-15 1995-04-25 Kabushiki Kaisha Toshiba Sputtering target and method of manufacturing the same
GB9016694D0 (en) * 1990-07-30 1990-09-12 Alcan Int Ltd Ductile ultra-high strength aluminium alloy extrusions
US5087297A (en) * 1991-01-17 1992-02-11 Johnson Matthey Inc. Aluminum target for magnetron sputtering and method of making same
US5171379A (en) * 1991-05-15 1992-12-15 Cabot Corporation Tantalum base alloys
EP0535314A1 (en) * 1991-08-30 1993-04-07 Mitsubishi Materials Corporation Platinum-cobalt alloy sputtering target and method for manufacturing same
US5231306A (en) * 1992-01-31 1993-07-27 Micron Technology, Inc. Titanium/aluminum/nitrogen material for semiconductor devices
JPH05214523A (ja) * 1992-02-05 1993-08-24 Toshiba Corp スパッタリングターゲットおよびその製造方法
US5330701A (en) * 1992-02-28 1994-07-19 Xform, Inc. Process for making finely divided intermetallic
US5693203A (en) * 1992-09-29 1997-12-02 Japan Energy Corporation Sputtering target assembly having solid-phase bonded interface
US5415829A (en) * 1992-12-28 1995-05-16 Nikko Kyodo Co., Ltd. Sputtering target
JP2857015B2 (ja) * 1993-04-08 1999-02-10 株式会社ジャパンエナジー 高純度アルミニウムまたはその合金からなるスパッタリングターゲット
US5400633A (en) * 1993-09-03 1995-03-28 The Texas A&M University System Apparatus and method for deformation processing of metals, ceramics, plastics and other materials
US5772860A (en) * 1993-09-27 1998-06-30 Japan Energy Corporation High purity titanium sputtering targets
KR950034588A (ko) * 1994-03-17 1995-12-28 오가 노리오 탄탈계 고유전체재료 및 고유전체막의 형성방법 및 반도체장치
US5513512A (en) * 1994-06-17 1996-05-07 Segal; Vladimir Plastic deformation of crystalline materials
FI100422B (fi) * 1994-07-11 1997-11-28 Metso Paper Inc Telan valmistus
US5590389A (en) * 1994-12-23 1996-12-31 Johnson Matthey Electronics, Inc. Sputtering target with ultra-fine, oriented grains and method of making same
US5850755A (en) * 1995-02-08 1998-12-22 Segal; Vladimir M. Method and apparatus for intensive plastic deformation of flat billets
JP3413782B2 (ja) * 1995-03-31 2003-06-09 日立金属株式会社 スパッタリング用チタンタ−ゲットおよびその製造方法
US5600989A (en) * 1995-06-14 1997-02-11 Segal; Vladimir Method of and apparatus for processing tungsten heavy alloys for kinetic energy penetrators
JP3654466B2 (ja) * 1995-09-14 2005-06-02 健司 東 アルミニウム合金の押出加工法及びそれにより得られる高強度、高靭性のアルミニウム合金材料
US5673581A (en) * 1995-10-03 1997-10-07 Segal; Vladimir Method and apparatus for forming thin parts of large length and width
JP3343774B2 (ja) * 1995-10-27 2002-11-11 トピー工業株式会社 鋳造アルミホイールの製造方法
JP3970323B2 (ja) * 1996-06-05 2007-09-05 デュラセル、インコーポレーテッド リチウム化リチウム酸化マンガンスピネルの改良された製造法
US5766380A (en) * 1996-11-05 1998-06-16 Sony Corporation Method for fabricating randomly oriented aluminum alloy sputtering targets with fine grains and fine precipitates
JPH10158829A (ja) * 1996-12-04 1998-06-16 Sony Corp スパッタリングターゲット組立体の製造方法
JP3867328B2 (ja) * 1996-12-04 2007-01-10 ソニー株式会社 スパッタリングターゲット及びその製造方法
US5994181A (en) * 1997-05-19 1999-11-30 United Microelectronics Corp. Method for forming a DRAM cell electrode
US6569270B2 (en) * 1997-07-11 2003-05-27 Honeywell International Inc. Process for producing a metal article
US5993621A (en) * 1997-07-11 1999-11-30 Johnson Matthey Electronics, Inc. Titanium sputtering target
CN1121502C (zh) * 1997-09-22 2003-09-17 科学技术厅金属材料技术研究所 超细组织钢及其制造方法
US6139701A (en) * 1997-11-26 2000-10-31 Applied Materials, Inc. Copper target for sputter deposition
US6348139B1 (en) * 1998-06-17 2002-02-19 Honeywell International Inc. Tantalum-comprising articles
US6193821B1 (en) * 1998-08-19 2001-02-27 Tosoh Smd, Inc. Fine grain tantalum sputtering target and fabrication process
US6351446B1 (en) * 1998-10-02 2002-02-26 Unaxis Balzers Aktiengesellschaft Optical data storage disk
US6348113B1 (en) * 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
US6123896A (en) * 1999-01-29 2000-09-26 Ceracon, Inc. Texture free ballistic grade tantalum product and production method
US6192969B1 (en) * 1999-03-22 2001-02-27 Asarco Incorporated Casting of high purity oxygen free copper
US6113761A (en) * 1999-06-02 2000-09-05 Johnson Matthey Electronics, Inc. Copper sputtering target assembly and method of making same
US6478902B2 (en) * 1999-07-08 2002-11-12 Praxair S.T. Technology, Inc. Fabrication and bonding of copper sputter targets
US6521173B2 (en) * 1999-08-19 2003-02-18 H.C. Starck, Inc. Low oxygen refractory metal powder for powder metallurgy
US6391163B1 (en) * 1999-09-27 2002-05-21 Applied Materials, Inc. Method of enhancing hardness of sputter deposited copper films
JP2003529206A (ja) * 1999-11-24 2003-09-30 ハネウェル・インターナショナル・インコーポレーテッド 物理蒸着ターゲット、導電性集積回路金属合金相互接続配線、電気めっきアノード、集積回路における導電性相互接続配線として用いるための金属合金
US20040072009A1 (en) * 1999-12-16 2004-04-15 Segal Vladimir M. Copper sputtering targets and methods of forming copper sputtering targets
JP2001240949A (ja) * 2000-02-29 2001-09-04 Mitsubishi Materials Corp 微細な結晶粒を有する高純度銅加工品素材の製造方法
US6619537B1 (en) * 2000-06-12 2003-09-16 Tosoh Smd, Inc. Diffusion bonding of copper sputtering targets to backing plates using nickel alloy interlayers
US6454994B1 (en) * 2000-08-28 2002-09-24 Honeywell International Inc. Solids comprising tantalum, strontium and silicon
US6887356B2 (en) * 2000-11-27 2005-05-03 Cabot Corporation Hollow cathode target and methods of making same
US6917999B2 (en) * 2001-06-29 2005-07-12 Intel Corporation Platform and method for initializing components within hot-plugged nodes
US6896748B2 (en) * 2002-07-18 2005-05-24 Praxair S.T. Technology, Inc. Ultrafine-grain-copper-base sputter targets
JP4263900B2 (ja) * 2002-11-13 2009-05-13 日鉱金属株式会社 Ｔａスパッタリングターゲット及びその製造方法
JP4794802B2 (ja) * 2002-11-21 2011-10-19 Ｊｘ日鉱日石金属株式会社 銅合金スパッタリングターゲット及び半導体素子配線

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105814233A (zh) * 2013-12-13 2016-07-27 普莱克斯 S.T.技术有限公司 扩散结合的铜溅射靶组件

Also Published As

Publication number Publication date
JP5325096B2 (ja) 2013-10-23
KR20080113124A (ko) 2008-12-26
JP2009535518A (ja) 2009-10-01
US20090101496A1 (en) 2009-04-23
US20070251818A1 (en) 2007-11-01
WO2007130888A1 (en) 2007-11-15

Similar Documents

Publication Publication Date Title
TW200801209A (en) Copper physical vapor deposition targets and methods of making copper physical vapor deposition targets
TW200801214A (en) Methods of producing deformed metal articles
WO2019236160A3 (en) Powder metallurgy sputtering targets and methods of producing same
WO2007130903A3 (en) Hollow cathode sputtering target
WO2010135415A3 (en) Tough iron-based bulk metallic glass alloys
WO2010085957A3 (en) Long shelf life milk and milk-related products, and a process and milk processing plant for their manufacture
EP1925684A3 (en) Magnesium alloy material and production thereof
WO2010093244A3 (en) Process for manufacturing magnesium alloy based products
UA99445C2 (ru) Способ получения порошка титана (варианты) и порошок титана, изготовленный данным способом
MX2018001308A (es) Metodo para la fabricacion de una pieza endurecida que no tiene problemas de fragilizacion por metal liquido.
WO2008003503A3 (en) Method of manufacturing aa2000 - series aluminium alloy products
MY140989A (en) Co-cr-pt-b alloy sputtering target.
MX2015014132A (es) Lamina de aleacion de aluminio para formacion por prensado, proceso para manufactura del mismo, y producto formado por prensado del mismo.
MY154415A (en) Non-heat treated steel for hot forging and steel for hot rolling excellent in fracture splittability and machinability, and hot forging non-heat treated steel part
SG11201810964UA (en) Sputtering target and production method therefor
WO2012070870A3 (ko) 상온성형성이 우수한 마그네슘 합금 판재 및 그 제조방법
WO2014194880A3 (de) Verfahren zur herstellung einer metallfolie
SG11201907957YA (en) Aluminium alloy vacuum chamber elements stable at high temperature
BR112017006273A2 (pt) processo de fabricação de produtos em liga de alumínio, magnésio e lítio
MX2020007414A (es) Aleaciones de aluminio para aplicaciones tales como ruedas y metodos de fabricacion.
WO2018074896A3 (ko) 고성형 마그네슘 합금 판재 및 이의 제조방법
TW200643182A (en) Process for casting a titanium alloy
MX2021007760A (es) Placa de aleacion de cobre, placa de aleacion de cobre con pelicula de recubrimiento unida y metodos respectivos para la fabrica cion de estos productos.
WO2002090619A3 (de) Additionsprodukt, seine herstellung und seine verwendung als korrosionsinhibitor
MY173760A (en) A metal alloy