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US3497402A - Stabilized grain-size tantalum alloy - Google Patents

Stabilized grain-size tantalum alloy Download PDF

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Publication number
US3497402A
US3497402A US524826A US3497402DA US3497402A US 3497402 A US3497402 A US 3497402A US 524826 A US524826 A US 524826A US 3497402D A US3497402D A US 3497402DA US 3497402 A US3497402 A US 3497402A
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Prior art keywords
alloy
tantalum
grain
pure
yttrium
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US524826A
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Richard W Douglass
Maurice L Torti Jr
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National Research Corp
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National Research Corp
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    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C27/00Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/02Alloys based on vanadium, niobium, or tantalum
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • C22F1/18High-melting or refractory metals or alloys based thereon

Definitions

  • the present invention is directed to tantalum alloys and more particularly to stabilized grain-size tantalum alloys having improved drawing characteristics.
  • the invention accordingly comprises the process involving the several steps in relation to the order of one or more of such steps with respect to each of the others, and the product resulting therefrom, which are exemplified in the following detailed disclosure and the scope of the application of which will be indicated in the claims.
  • the tantalum alloy is prepared by arc melting tantalum with the addition of a small amount of yttrium (on the order of .2 percent), the melting being accomplished so that a tantalum ingot is obtained containing about 10 to 1000 p.p.m. yttrium and preferably about 30 to 100 p.p.m. yttrium.
  • This ingot is then reduced to plate stock about inch thick and then subjected to an anneal of at least 3000 F. and preferably 3400 to 3600 F. to achieve substantially complete recrystallization of the tantalum.
  • the tantalum alloy is rolled to a sheet, preferably With one intermediate anneal at about .050 inch thick.
  • the sheet is then preferably rolled to .020 and given a final anneal at 2200 F.
  • the final anneal is generally conducted at a temperature of about 2000 F. to 2400 F. All of the annealing times may be on the order of one hour.
  • the product of the treatment outlined above is found to have rather unusual characteristics. It has the fine grain structure and resistance to grain growth characteristic of tantalum alloys containing yttrium in excess of 10 p.p.m. as described in the above-mentioned copending application of Torti. However, for some reason which is not completely understood, the recrystallization temperature of the final sheet is much lower than would normally be expected, this recrystallization temperature being somewhat less than 3000 F. and approaching that of pure tantalum. Additionally, the product of the present invention is very ductile, has an equiaxed grain structure, and does show directional grain structures which give caring during drawing operations.
  • Example 1 A tantalum ingot containing 60 p.p.m. yttrium of 4 /2 inches in diameter was forged to 2 /2 inches and rolled to 4 inch plate stock, 24 inches by 30 inches. This plate stock was then annealed in a vacuum furnace to a pressure of 10* torr for 1 hour at 3600 F. Thereafter the plate stock was rolled on a 2 high mill to sheet .030" thick. This sheet was then annealed for 1 hour in a vacuurn furnace at 10 torr at a temperature of 2200 F. The material was then tested and found to have ultimate tensile strength of about 46,000 p.s.i. which compares to 48,000 p.s.i. for pure tantalum.
  • the .2% yield strength was 32,000 p.s.i. This compared to about 35,000 p.s.i. for pure tantalum. Percent elongation was about 36% as compared to about 35% for pure tantalum. This was then subjected to a standard physical test and the results are shown in Table I below, where the product of Example 1 is compared to pure tantalum.
  • Example 2 In this case, the initial annealing temperature at the 4" plate was 3600 F. for one hour. The sheet was annealed at .050" for 1 hour at 2200 F. and the final anneal at .020" was 2200 F. for 1 hour. The properties of this product were essentially the same as the product obtained in Example 1.
  • Example 3 In this example, the initial anneal at the 4" plate size was 3 hours at only 2200 F., while the other treatments were the same as in Example 1. In this case the final product had much higher strength and lower elongation with a recrystallization temperature of about 4000" F. When formed into a cup, it had very poor characteristics with extreme caring.
  • a cold worked annealed tantalum alloy having a fine grain structure and being resistant to grain coarsening upon annealing, said alloy having an ASTM number greater than 3 upon heating to 3700 F. for one hour, said alloy having ⁇ yield strength and percent elongation properties equivalent to pure annealed tantalum and showing Olsen cup ductility properties essentially equivalent to pure annealed tantalum, said alloy having an ultimate strength at elevated temperatures substantially in excess of pure tantalum, and further characterized by having a recrystallization temperature less than 3000 F. and having an equiaxed grain structure; and in line 10, said alloy having been produced by the process of claim 1, said alloy consisting of between about 10 and 1000 ppm. yttrium the balance being tantalum.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Heat Treatment Of Steel (AREA)

Description

United States Patent ABSTRACT OF THE DISCLOSURE A method of producing a cold worked annealed tantalum alloy having a fine equiaxed grain structure and the product so produced. The method consists of cold working the tantalum alloy, heating the alloy to a temperature above its recrystallization, cold working to the desired shape and finally annealing the alloy at a temperature sufiicient to provide an equiaxed grain structure.
The present invention is directed to tantalum alloys and more particularly to stabilized grain-size tantalum alloys having improved drawing characteristics.
In a copending application, Ser. No. 408,684, filed Nov. 3, 1964 by Maurice L. Torti, In, now U.S. Patent No. 3,268,328, and assigned to the assignee of the present invention, there is described a new stabilized grain tantalum alloy. The present invention is directed to improvements of such alloys, particularly with respect to an alloy which has a stabilized grain size at elevated temperatures as well as having excellent deep drawing characteristics.
Accordingly, it is a principal object of the present invention to provide an improved alloy containing grainsize-stabilizing amounts of yttrium and which has other physical properties such as strength, elongation and the like substantially equivalent to pure annealed tantalum.
These objects are accomplished in the present invention by providing for the addition of grain-stabilizing-amounts of yttrium, as taught in the above-mentioned copending application, with the provision of intermediate heat treatments which, for some reason which is not completely understood, provide a final product having some of the attributes of the yttrium-containing alloys and some of the properties of pure tantalium.
The invention accordingly comprises the process involving the several steps in relation to the order of one or more of such steps with respect to each of the others, and the product resulting therefrom, which are exemplified in the following detailed disclosure and the scope of the application of which will be indicated in the claims.
For a fuller understanding of the nature and objects of the invention, reference should be had to the following detailed description.
In a preferred embodiment of the invention, the tantalum alloy is prepared by arc melting tantalum with the addition of a small amount of yttrium (on the order of .2 percent), the melting being accomplished so that a tantalum ingot is obtained containing about 10 to 1000 p.p.m. yttrium and preferably about 30 to 100 p.p.m. yttrium. This ingot is then reduced to plate stock about inch thick and then subjected to an anneal of at least 3000 F. and preferably 3400 to 3600 F. to achieve substantially complete recrystallization of the tantalum. Thereafter, the tantalum alloy is rolled to a sheet, preferably With one intermediate anneal at about .050 inch thick. The sheet is then preferably rolled to .020 and given a final anneal at 2200 F. The final anneal is generally conducted at a temperature of about 2000 F. to 2400 F. All of the annealing times may be on the order of one hour.
The product of the treatment outlined above is found to have rather unusual characteristics. It has the fine grain structure and resistance to grain growth characteristic of tantalum alloys containing yttrium in excess of 10 p.p.m. as described in the above-mentioned copending application of Torti. However, for some reason which is not completely understood, the recrystallization temperature of the final sheet is much lower than would normally be expected, this recrystallization temperature being somewhat less than 3000 F. and approaching that of pure tantalum. Additionally, the product of the present invention is very ductile, has an equiaxed grain structure, and does show directional grain structures which give caring during drawing operations.
In order that the invention may be more fully understood, reference should be had to the following nonlimiting examples:
Example 1 A tantalum ingot containing 60 p.p.m. yttrium of 4 /2 inches in diameter was forged to 2 /2 inches and rolled to 4 inch plate stock, 24 inches by 30 inches. This plate stock was then annealed in a vacuum furnace to a pressure of 10* torr for 1 hour at 3600 F. Thereafter the plate stock was rolled on a 2 high mill to sheet .030" thick. This sheet was then annealed for 1 hour in a vacuurn furnace at 10 torr at a temperature of 2200 F. The material was then tested and found to have ultimate tensile strength of about 46,000 p.s.i. which compares to 48,000 p.s.i. for pure tantalum. The .2% yield strength was 32,000 p.s.i. This compared to about 35,000 p.s.i. for pure tantalum. Percent elongation was about 36% as compared to about 35% for pure tantalum. This was then subjected to a standard physical test and the results are shown in Table I below, where the product of Example 1 is compared to pure tantalum.
For the Olsen Cup values the annealed .030" thick stock was rolled to .005 and .002" and reuunealed at 2,200 F. for 1 hour. All the other tests were on the .030" stock.
Example 2 In this case, the initial annealing temperature at the 4" plate was 3600 F. for one hour. The sheet was annealed at .050" for 1 hour at 2200 F. and the final anneal at .020" was 2200 F. for 1 hour. The properties of this product were essentially the same as the product obtained in Example 1.
Example 3 In this example, the initial anneal at the 4" plate size was 3 hours at only 2200 F., while the other treatments were the same as in Example 1. In this case the final product had much higher strength and lower elongation with a recrystallization temperature of about 4000" F. When formed into a cup, it had very poor characteristics with extreme caring.
While several preferred embodiments of the invention have been described above, numerous modifications thereof may be made without departing from the spirit of the invention. The yttrium concentrations and annealing times and temperatures may be varied from the specific examples given as defined in the specification.
Since certain changes can be made in the above process and product without departing from the scope of the invention herein involved, it is intended that all matter contained in the above description shall be interpreted as illustrative and not in a limiting sense.
What is claimed is:
1. The process of producing a cold worked annealed tantalum alloy having a fine grain structure and being resistant to grain coarsening upon annealing, said alloy having an ASTM number greater than 3 upon heating to 3700 F. for one hour, said alloy having yield strength and percent elongation properties equivalent to pure annealed tantalum and showing Olsen cup ductility properties essentially equivalent to pure annealed tantalum, said alloy having an ultimate strength at elevated temperatures essentially in excess of pure tantalum, said alloy consisting of between about 10 and 1000 p.p.m. yttrium the balance being tantalum, said process comprising the steps of:
(a) partially cold working said alloy to reduce its thickness;
(b) annealing said alloy at a temperature in excess of 3000 F. prior to final cold working of said alloy to achieve complete recrystallization of said alloy;
(c) finally cold working said alloy to final dimension;
and then 4 (d) annealing said final cold Worked alloy to a temperature of about 2000 F. to 2400 F. to provide an equiaxed grain structure.
2. A cold worked annealed tantalum alloy having a fine grain structure and being resistant to grain coarsening upon annealing, said alloy having an ASTM number greater than 3 upon heating to 3700 F. for one hour, said alloy having \yield strength and percent elongation properties equivalent to pure annealed tantalum and showing Olsen cup ductility properties essentially equivalent to pure annealed tantalum, said alloy having an ultimate strength at elevated temperatures substantially in excess of pure tantalum, and further characterized by having a recrystallization temperature less than 3000 F. and having an equiaxed grain structure; and in line 10, said alloy having been produced by the process of claim 1, said alloy consisting of between about 10 and 1000 ppm. yttrium the balance being tantalum.
No references cited.
CHARLES N. LOVELL, Primary Examiner Y U.S. Cl. X.R. 75174; 148-32
US524826A 1966-02-03 1966-02-03 Stabilized grain-size tantalum alloy Expired - Lifetime US3497402A (en)

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Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3700659A1 (en) * 1986-01-29 1987-07-30 Fansteel Inc FINE-GRAINED PROBLEM TANTALO WIRE
EP0285741A1 (en) * 1987-04-10 1988-10-12 W.C. Heraeus GmbH Process for the production of a highly ductile semi-finished tantalum product
US4859257A (en) * 1986-01-29 1989-08-22 Fansteel Inc. Fine grained embrittlement resistant tantalum wire
WO1992020828A1 (en) * 1991-05-15 1992-11-26 Cabot Corporation Wrought tantalum or niobium alloy having silicon and a compound dopant
US5580516A (en) * 1989-06-26 1996-12-03 Cabot Corporation Powders and products of tantalum, niobium and their alloys
US5680282A (en) * 1996-10-24 1997-10-21 International Business Machine Corporation Getter layer lead structure for eliminating resistance increase phonomena and embrittlement and method for making the same
US5699401A (en) * 1996-10-15 1997-12-16 General Electric Company Anode assembly for use in x-ray tubes, and related articles of manufacture
US5846287A (en) * 1993-08-05 1998-12-08 Cabot Corporation Consumable electrode method for forming micro-alloyed products
US6051326A (en) * 1997-04-26 2000-04-18 Cabot Corporation Valve metal compositions and method
US6193821B1 (en) * 1998-08-19 2001-02-27 Tosoh Smd, Inc. Fine grain tantalum sputtering target and fabrication process
US20020000272A1 (en) * 1999-12-16 2002-01-03 Vladimir Segal Alloys formed from cast materials utilizing equal channel angular extrusion
US6348113B1 (en) * 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
US20020063056A1 (en) * 1998-06-17 2002-05-30 Shah Ritesh P. Methods of forming metal articles
US20020125128A1 (en) * 2000-02-02 2002-09-12 Honywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture
US20030052000A1 (en) * 1997-07-11 2003-03-20 Vladimir Segal Fine grain size material, sputtering target, methods of forming, and micro-arc reduction method
WO2002088412A3 (en) * 2001-01-11 2003-04-17 Cabot Corp Tantalum and niobium billets and methods of producing the same
US20040072009A1 (en) * 1999-12-16 2004-04-15 Segal Vladimir M. Copper sputtering targets and methods of forming copper sputtering targets
US6770154B2 (en) 2001-09-18 2004-08-03 Praxair S.T. Technology, Inc. Textured-grain-powder metallurgy tantalum sputter target
US20040250924A1 (en) * 2001-09-18 2004-12-16 Koenigsmann Holger J. Textured-grain-powder metallurgy tantalum sputter target
US20040256226A1 (en) * 2003-06-20 2004-12-23 Wickersham Charles E. Method and design for sputter target attachment to a backing plate
US6863750B2 (en) 2000-05-22 2005-03-08 Cabot Corporation High purity niobium and products containing the same, and methods of making the same
US20060118212A1 (en) * 2000-02-02 2006-06-08 Turner Stephen P Tantalum PVD component producing methods
US20070084527A1 (en) * 2005-10-19 2007-04-19 Stephane Ferrasse High-strength mechanical and structural components, and methods of making high-strength components
US20070251818A1 (en) * 2006-05-01 2007-11-01 Wuwen Yi Copper physical vapor deposition targets and methods of making copper physical vapor deposition targets
DE102011109756A1 (en) 2011-08-09 2013-02-14 H.C. Starck Gmbh Process for the preparation of electrolytic capacitors made of valve metal powders

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None *

Cited By (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4859257A (en) * 1986-01-29 1989-08-22 Fansteel Inc. Fine grained embrittlement resistant tantalum wire
DE3700659A1 (en) * 1986-01-29 1987-07-30 Fansteel Inc FINE-GRAINED PROBLEM TANTALO WIRE
EP0285741A1 (en) * 1987-04-10 1988-10-12 W.C. Heraeus GmbH Process for the production of a highly ductile semi-finished tantalum product
US5580516A (en) * 1989-06-26 1996-12-03 Cabot Corporation Powders and products of tantalum, niobium and their alloys
WO1992020828A1 (en) * 1991-05-15 1992-11-26 Cabot Corporation Wrought tantalum or niobium alloy having silicon and a compound dopant
US5171379A (en) * 1991-05-15 1992-12-15 Cabot Corporation Tantalum base alloys
US5846287A (en) * 1993-08-05 1998-12-08 Cabot Corporation Consumable electrode method for forming micro-alloyed products
US5699401A (en) * 1996-10-15 1997-12-16 General Electric Company Anode assembly for use in x-ray tubes, and related articles of manufacture
US5828532A (en) * 1996-10-24 1998-10-27 International Business Machines Corporation Getter layer lead structure for eliminating resistance increase phenomena and embrittlement and method for making the same
US5680282A (en) * 1996-10-24 1997-10-21 International Business Machine Corporation Getter layer lead structure for eliminating resistance increase phonomena and embrittlement and method for making the same
US6051326A (en) * 1997-04-26 2000-04-18 Cabot Corporation Valve metal compositions and method
US6231689B1 (en) 1997-04-26 2001-05-15 Cabot Corporation Valve metal compositions and method
US6517645B2 (en) 1997-04-26 2003-02-11 Cabot Corporation Valve metal compositions and method
US20030052000A1 (en) * 1997-07-11 2003-03-20 Vladimir Segal Fine grain size material, sputtering target, methods of forming, and micro-arc reduction method
US20020153248A1 (en) * 1998-06-17 2002-10-24 Shah Ritesh P. Methods of forming metal articles
US20020063056A1 (en) * 1998-06-17 2002-05-30 Shah Ritesh P. Methods of forming metal articles
US6193821B1 (en) * 1998-08-19 2001-02-27 Tosoh Smd, Inc. Fine grain tantalum sputtering target and fabrication process
AU764689B2 (en) * 1998-11-25 2003-08-28 Cabot Corporation High purity tantalum and products containing the same like sputter targets
US20030168131A1 (en) * 1998-11-25 2003-09-11 Michaluk Christopher A. High purity tantalum, products containing the same, and methods of making the same
US6348113B1 (en) * 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
US7585380B2 (en) 1998-11-25 2009-09-08 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
US7431782B2 (en) 1998-11-25 2008-10-07 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
US6893513B2 (en) 1998-11-25 2005-05-17 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
US20040072009A1 (en) * 1999-12-16 2004-04-15 Segal Vladimir M. Copper sputtering targets and methods of forming copper sputtering targets
US20020000272A1 (en) * 1999-12-16 2002-01-03 Vladimir Segal Alloys formed from cast materials utilizing equal channel angular extrusion
US6723187B2 (en) 1999-12-16 2004-04-20 Honeywell International Inc. Methods of fabricating articles and sputtering targets
US20020007880A1 (en) * 1999-12-16 2002-01-24 Vladimir Segal Methods for controlling the texture of alloys utilizing equal channel angular extrusion
US7517417B2 (en) 2000-02-02 2009-04-14 Honeywell International Inc. Tantalum PVD component producing methods
US20060118212A1 (en) * 2000-02-02 2006-06-08 Turner Stephen P Tantalum PVD component producing methods
US20020125128A1 (en) * 2000-02-02 2002-09-12 Honywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture
US7101447B2 (en) 2000-02-02 2006-09-05 Honeywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture
US6863750B2 (en) 2000-05-22 2005-03-08 Cabot Corporation High purity niobium and products containing the same, and methods of making the same
US20050263217A1 (en) * 2000-05-22 2005-12-01 Cabot Corporation High purity niobium and products containing the same, and methods of making the same
WO2002088412A3 (en) * 2001-01-11 2003-04-17 Cabot Corp Tantalum and niobium billets and methods of producing the same
US8231744B2 (en) 2001-01-11 2012-07-31 Global Advanced Metals, Usa, Inc. Tantalum and niobium billets and methods of producing the same
US7485198B2 (en) 2001-01-11 2009-02-03 Cabot Corporation Tantalum and niobium billets and methods of producing the same
US6770154B2 (en) 2001-09-18 2004-08-03 Praxair S.T. Technology, Inc. Textured-grain-powder metallurgy tantalum sputter target
US7081148B2 (en) 2001-09-18 2006-07-25 Praxair S.T. Technology, Inc. Textured-grain-powder metallurgy tantalum sputter target
US20040250924A1 (en) * 2001-09-18 2004-12-16 Koenigsmann Holger J. Textured-grain-powder metallurgy tantalum sputter target
US20040256226A1 (en) * 2003-06-20 2004-12-23 Wickersham Charles E. Method and design for sputter target attachment to a backing plate
US20070084527A1 (en) * 2005-10-19 2007-04-19 Stephane Ferrasse High-strength mechanical and structural components, and methods of making high-strength components
US20070251818A1 (en) * 2006-05-01 2007-11-01 Wuwen Yi Copper physical vapor deposition targets and methods of making copper physical vapor deposition targets
DE102011109756A1 (en) 2011-08-09 2013-02-14 H.C. Starck Gmbh Process for the preparation of electrolytic capacitors made of valve metal powders
WO2013021004A1 (en) 2011-08-09 2013-02-14 H.C. Starck Gmbh Method for producing electrolytic capacitors from valve metal powders
US9378894B2 (en) 2011-08-09 2016-06-28 H.C. Starck Gmbh Method for producing electrolytic capacitors from valve metal powders

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