SG126906A1 - Special purity filter for multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing method - Google Patents
Special purity filter for multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing methodInfo
- Publication number
- SG126906A1 SG126906A1 SG200602823A SG200602823A SG126906A1 SG 126906 A1 SG126906 A1 SG 126906A1 SG 200602823 A SG200602823 A SG 200602823A SG 200602823 A SG200602823 A SG 200602823A SG 126906 A1 SG126906 A1 SG 126906A1
- Authority
- SG
- Singapore
- Prior art keywords
- layer
- layer mirror
- spectral purity
- radiation
- mirror
- Prior art date
Links
- 230000005855 radiation Effects 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 230000003595 spectral effect Effects 0.000 abstract 10
- 230000003292 diminished effect Effects 0.000 abstract 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0891—Ultraviolet [UV] mirrors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/283—Interference filters designed for the ultraviolet
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/067—Construction details
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Environmental & Geological Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Optical Elements Other Than Lenses (AREA)
- Optical Filters (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/115,406 US7336416B2 (en) | 2005-04-27 | 2005-04-27 | Spectral purity filter for multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG126906A1 true SG126906A1 (en) | 2006-11-29 |
Family
ID=36764463
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200602823A SG126906A1 (en) | 2005-04-27 | 2006-04-26 | Special purity filter for multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing method |
Country Status (8)
Country | Link |
---|---|
US (5) | US7336416B2 (ja) |
EP (3) | EP2261699B1 (ja) |
JP (2) | JP2006310793A (ja) |
KR (1) | KR100779699B1 (ja) |
CN (1) | CN100559217C (ja) |
AT (1) | ATE553403T1 (ja) |
SG (1) | SG126906A1 (ja) |
TW (1) | TWI302992B (ja) |
Families Citing this family (82)
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US7843632B2 (en) * | 2006-08-16 | 2010-11-30 | Cymer, Inc. | EUV optics |
DE10309084A1 (de) | 2003-03-03 | 2004-09-16 | Carl Zeiss Smt Ag | Reflektives optisches Element und EUV-Lithographiegerät |
JP4532991B2 (ja) * | 2004-05-26 | 2010-08-25 | キヤノン株式会社 | 投影光学系、露光装置及びデバイス製造方法 |
US7336416B2 (en) * | 2005-04-27 | 2008-02-26 | Asml Netherlands B.V. | Spectral purity filter for multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing method |
US7518797B2 (en) * | 2005-12-02 | 2009-04-14 | Carl Zeiss Smt Ag | Microlithographic exposure apparatus |
US7329876B2 (en) * | 2006-01-26 | 2008-02-12 | Xtreme Technologies Gmbh | Narrow-band transmission filter for EUV radiation |
US7736820B2 (en) * | 2006-05-05 | 2010-06-15 | Asml Netherlands B.V. | Anti-reflection coating for an EUV mask |
US7666555B2 (en) * | 2006-12-29 | 2010-02-23 | Intel Corporation | Pellicle, methods of fabrication and methods of use for extreme ultraviolet lithography |
WO2008090988A1 (ja) * | 2007-01-25 | 2008-07-31 | Nikon Corporation | 光学素子、これを用いた露光装置、及びデバイス製造方法 |
US7965378B2 (en) * | 2007-02-20 | 2011-06-21 | Asml Holding N.V | Optical system and method for illumination of reflective spatial light modulators in maskless lithography |
US20080266651A1 (en) * | 2007-04-24 | 2008-10-30 | Katsuhiko Murakami | Optical apparatus, multilayer-film reflective mirror, exposure apparatus, and device |
DE102007051671A1 (de) * | 2007-10-26 | 2009-05-07 | Carl Zeiss Smt Ag | Abbildende Optik sowie Projektionsbelichtungsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik |
US20090250637A1 (en) * | 2008-04-02 | 2009-10-08 | Cymer, Inc. | System and methods for filtering out-of-band radiation in EUV exposure tools |
TWI420134B (zh) * | 2008-05-09 | 2013-12-21 | Hon Hai Prec Ind Co Ltd | 光學鏡片及其鍍膜方法 |
US20110080573A1 (en) * | 2008-06-04 | 2011-04-07 | Asml Netherlands B.V. | Multilayer mirror and lithographic apparatus |
WO2009154238A1 (ja) * | 2008-06-19 | 2009-12-23 | 旭硝子株式会社 | Euvリソグラフィ用反射型マスクブランク |
NL2002968A1 (nl) * | 2008-06-30 | 2009-12-31 | Asml Netherlands Bv | Optical element, lithographic apparatus including such an optical element, device manufacturing method, and device manufactured thereby. |
CN102150084B (zh) | 2008-07-11 | 2014-03-05 | Asml荷兰有限公司 | 辐射源、光刻设备以及器件制造方法 |
EP2310912B1 (en) * | 2008-08-14 | 2016-07-13 | ASML Netherlands BV | Radiation source, lithographic apparatus, and device manufacturing method |
NL2003299A (en) * | 2008-08-28 | 2010-03-11 | Asml Netherlands Bv | Spectral purity filter and lithographic apparatus. |
NL2003303A (en) * | 2008-08-29 | 2010-03-11 | Asml Netherlands Bv | Spectral purity filter, lithographic apparatus including such a spectral purity filter, device manufacturing method, and device manufactured thereby. |
WO2010032753A1 (ja) * | 2008-09-18 | 2010-03-25 | 株式会社ニコン | 開口絞り、光学系、露光装置及び電子デバイスの製造方法 |
IT1395244B1 (it) * | 2008-12-17 | 2012-09-05 | St Microelectronics Srl | Procedimento di fabbricazione di un dispositivo emettitore di radiazione ottica a cavita' risonante |
EP2396794A1 (en) | 2009-02-13 | 2011-12-21 | ASML Netherlands BV | Multilayer mirror and lithographic apparatus |
DE102009032779A1 (de) * | 2009-07-10 | 2011-01-13 | Carl Zeiss Smt Ag | Spiegel für den EUV-Wellenlängenbereich, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv |
US8519325B1 (en) * | 2009-08-24 | 2013-08-27 | Zhenyu Lu | Optical radiation concentrator |
DE102009045170A1 (de) * | 2009-09-30 | 2011-04-07 | Carl Zeiss Smt Gmbh | Reflektives optisches Element und Verfahren zum Betrieb einer EUV-Lithographievorrichtung |
DE102009044462A1 (de) | 2009-11-06 | 2011-01-05 | Carl Zeiss Smt Ag | Optisches Element, Beleuchtungssystem und Projektionsbelichtungsanlage |
EP2511945A4 (en) * | 2009-12-09 | 2014-09-03 | Asahi Glass Co Ltd | MULTILAYER MIRROR FOR EXTREME ULTRAVIOLET LITHOGRAPHY AND PRODUCTION METHOD THEREOF |
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DE102010062597A1 (de) * | 2010-12-08 | 2012-06-14 | Carl Zeiss Smt Gmbh | Reflektives optisches Abbildungssystem |
CN102621815B (zh) * | 2011-01-26 | 2016-12-21 | Asml荷兰有限公司 | 用于光刻设备的反射光学部件及器件制造方法 |
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JP2014508414A (ja) * | 2011-03-04 | 2014-04-03 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置、スペクトル純度フィルタおよびデバイス製造方法 |
JP2014514736A (ja) | 2011-03-16 | 2014-06-19 | ケーエルエー−テンカー コーポレイション | 薄膜スペクトル純度フィルタコーティングとともに画像センサを使用するeuv化学線レチクル検査システム |
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JP5951010B2 (ja) * | 2011-06-15 | 2016-07-13 | エーエスエムエル ネザーランズ ビー.ブイ. | 多層ミラー、多層ミラーを生成する方法およびリソグラフィ装置 |
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DE102011083461A1 (de) | 2011-09-27 | 2013-03-28 | Carl Zeiss Smt Gmbh | Verfahren zum Erzeugen einer Deckschicht aus Siliziumoxid an einem EUV-Spiegel |
US9927094B2 (en) * | 2012-01-17 | 2018-03-27 | Kla-Tencor Corporation | Plasma cell for providing VUV filtering in a laser-sustained plasma light source |
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CN102681054B (zh) * | 2012-05-08 | 2014-03-19 | 太原理工大学 | 基于光子晶体的全可见光波段全角度反射器 |
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CN108680981B (zh) * | 2018-05-16 | 2020-12-01 | 德州尧鼎光电科技有限公司 | 一种深紫外窄带滤光片制备方法 |
CN109254338A (zh) * | 2018-10-26 | 2019-01-22 | 中国科学院长春光学精密机械与物理研究所 | 一种19.5nm多层膜反射镜 |
KR102263833B1 (ko) * | 2019-09-09 | 2021-06-11 | 주식회사 와이즈가드 | 기능성 산화물층을 포함하는 광기능성 패턴 구조물 |
TW202119136A (zh) * | 2019-10-18 | 2021-05-16 | 美商應用材料股份有限公司 | 多層反射器及其製造和圖案化之方法 |
US11448970B2 (en) * | 2020-09-09 | 2022-09-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lithography system and methods |
CN112820439B (zh) * | 2020-12-31 | 2023-01-06 | 苏州闻道电子科技有限公司 | 一种用于x射线与软x射线波段的滤片及其制备方法 |
CN113776662B (zh) * | 2021-09-02 | 2022-12-16 | 同济大学 | 超高真空环境远紫外-极紫外光斩波周期调制分光装置 |
CN115132084B (zh) * | 2022-07-01 | 2023-09-26 | 武汉华星光电半导体显示技术有限公司 | 显示装置 |
CN118604920A (zh) * | 2024-05-22 | 2024-09-06 | 昆山杜克大学 | 用于抑制热辐射的材料及其制备方法和应用、热管理器件 |
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US6228512B1 (en) * | 1999-05-26 | 2001-05-08 | The Regents Of The University Of California | MoRu/Be multilayers for extreme ultraviolet applications |
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FR2802311B1 (fr) * | 1999-12-08 | 2002-01-18 | Commissariat Energie Atomique | Dispositif de lithographie utilisant une source de rayonnement dans le domaine extreme ultraviolet et des miroirs multicouches a large bande spectrale dans ce domaine |
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TWI227381B (en) | 2002-08-28 | 2005-02-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
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2005
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- 2006-03-13 JP JP2006067463A patent/JP2006310793A/ja active Pending
- 2006-04-14 TW TW095113523A patent/TWI302992B/zh active
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- 2006-04-26 SG SG200602823A patent/SG126906A1/en unknown
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US7706057B2 (en) | 2010-04-27 |
JP2006310793A (ja) | 2006-11-09 |
US20080316595A1 (en) | 2008-12-25 |
KR100779699B1 (ko) | 2007-11-26 |
CN1854771A (zh) | 2006-11-01 |
US20060245058A1 (en) | 2006-11-02 |
JP5406602B2 (ja) | 2014-02-05 |
TW200643481A (en) | 2006-12-16 |
TWI302992B (en) | 2008-11-11 |
CN100559217C (zh) | 2009-11-11 |
EP1717609A1 (en) | 2006-11-02 |
US7336416B2 (en) | 2008-02-26 |
US7463413B2 (en) | 2008-12-09 |
US8139200B2 (en) | 2012-03-20 |
EP1717609B1 (en) | 2012-04-11 |
ATE553403T1 (de) | 2012-04-15 |
EP2261698A1 (en) | 2010-12-15 |
EP2261699B1 (en) | 2013-03-27 |
US20110134410A1 (en) | 2011-06-09 |
KR20060113519A (ko) | 2006-11-02 |
US20060245057A1 (en) | 2006-11-02 |
JP2009294659A (ja) | 2009-12-17 |
EP2261698B1 (en) | 2013-03-20 |
EP2261699A1 (en) | 2010-12-15 |
US20100149512A1 (en) | 2010-06-17 |
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