[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

KR940014263A - 산화실리콘막 형성방법 - Google Patents

산화실리콘막 형성방법 Download PDF

Info

Publication number
KR940014263A
KR940014263A KR1019930027161A KR930027161A KR940014263A KR 940014263 A KR940014263 A KR 940014263A KR 1019930027161 A KR1019930027161 A KR 1019930027161A KR 930027161 A KR930027161 A KR 930027161A KR 940014263 A KR940014263 A KR 940014263A
Authority
KR
South Korea
Prior art keywords
silicon oxide
substrate
solvent
silsesquioxane resin
forming
Prior art date
Application number
KR1019930027161A
Other languages
English (en)
Other versions
KR100282684B1 (ko
Inventor
가쯔또시 미네
다까시 나까무라
모또시 사사끼
Original Assignee
이즈까 고지
다우 코닝 토레이 실리콘 캄파니, 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이즈까 고지, 다우 코닝 토레이 실리콘 캄파니, 리미티드 filed Critical 이즈까 고지
Publication of KR940014263A publication Critical patent/KR940014263A/ko
Application granted granted Critical
Publication of KR100282684B1 publication Critical patent/KR100282684B1/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/87—Ceramics
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/25—Oxides by deposition from the liquid phase
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
    • C03C17/30—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with silicon-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
    • C04B41/5035—Silica
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1212—Zeolites, glasses
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/122—Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1275—Process of deposition of the inorganic material performed under inert atmosphere
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1279—Process of deposition of the inorganic material performed under reactive atmosphere, e.g. oxidising or reducing atmospheres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02134—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising hydrogen silsesquioxane, e.g. HSQ
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
    • H01L21/3124—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds layers comprising hydrogen silsesquioxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/213—SiO2
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/11—Deposition methods from solutions or suspensions
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/32—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Structural Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)

Abstract

기판의 표면상의 두꺼운 산화 실리콘 막의 형성 방법은 기판의 표면상에 수소 실세스퀴옥산 수지막을 형성하는 단계와, 산화 실리콘 생성물내의 실리콘 결합 수소 원자의 함유량이 수소 실세스퀴옥산 수지내의 실리콘 결합 수소 원자의 함유량의 80% 이하에 도달할때까지는 불활성 가스 분위기에서 250℃ 내지 500℃(단, 500℃ 포함하지 않음)의 온도로 수지막이 형성되어 있는기판을 가열함으로써 수소 실세스퀴옥산을 세라믹 형태의 산화 실리콘으로 변환하는 단계를 포함한다.

Description

산화실리콘의 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (5)

  1. 기판의 표면상에 수소 실세스퀴옥산 수지막을 형성하는 단계와, 산화 실리콘 생성물내의 실리콘 결합 수소 원자의 함유량이 수소 실세스퀴옥산 수지내의 살리콘 결합 수소 원자의 함유량이 80% 이하에 도달할때까지 불활성 가스 분위기에서 250℃ 내지 500℃(단, 500℃ 포함하지 않음)의 온도로 수지막의 형성된 기판을 가열함으로써 수소 실레스퀴옥산 수지를 세라믹 형태의 산화 실리콘으로 변화시키는 단계를 포함하는 것을 특징으로 하는 산화 실리콘 막 형성 방법.
  2. 제 1 항에 있어서, 상기 수소 실세스퀴옥산 수지막은, 수소 실세스퀴옥산 수지의 유기 용제 용액을 제공하고, 상기 용액을 스핀-코팅, 스프레잉 및 함침중 선택중 방법으로 적용시켜서, 용제를 제거함으로써 기판 표면상에 형성되는 것을 특징으로 하는 산화 실리콘 막 형성 방법.
  3. 제 2 항에 있어서, 상기 용제는 향료 용제, 지방성 용제, 케톤 용제, 에스테르 용제와 실리콘 용제로부터 선택되는 것을 특징으로 하는 산화 실리콘 막 형성 방법.
  4. 제 1 항에 있어서, 상기 기판은 유리 기판, 세라믹 기판, 금속 기판과 반도체 장치로부터 선택되는 것을 특징으로 하는 산화 실리콘 막 형성 방법.
  5. 제 1 항에 있어서, 상기 불활성 가스는 니트로겐, 아르곤, 헬륨과 네온중에서 선택되는 것을 특징으로 하는 산화 실리콘 막 형성 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930027161A 1992-12-10 1993-12-10 산화 실리콘막 형성방법 KR100282684B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP35273592A JP3174416B2 (ja) 1992-12-10 1992-12-10 酸化ケイ素膜の形成方法
JP92-352735 1992-12-10

Publications (2)

Publication Number Publication Date
KR940014263A true KR940014263A (ko) 1994-07-18
KR100282684B1 KR100282684B1 (ko) 2001-03-02

Family

ID=18426081

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930027161A KR100282684B1 (ko) 1992-12-10 1993-12-10 산화 실리콘막 형성방법

Country Status (6)

Country Link
US (1) US5370904A (ko)
EP (1) EP0604779B1 (ko)
JP (1) JP3174416B2 (ko)
KR (1) KR100282684B1 (ko)
DE (1) DE69309634T2 (ko)
TW (1) TW247367B (ko)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2027031A1 (en) * 1989-10-18 1991-04-19 Loren A. Haluska Hermetic substrate coatings in an inert gas atmosphere
KR100361043B1 (ko) 1993-12-27 2003-04-10 가와사키 마이크로 엘렉트로닉스 가부시키가이샤 반도체장치의절연막및절연막형성용도포액및절연막의제조방법
US5530293A (en) 1994-11-28 1996-06-25 International Business Machines Corporation Carbon-free hydrogen silsesquioxane with dielectric constant less than 3.2 annealed in hydrogen for integrated circuits
US5618878A (en) * 1995-04-07 1997-04-08 Dow Corning Corporation Hydrogen silsesquioxane resin coating composition
US5508238A (en) * 1995-05-11 1996-04-16 Dow Corning Corporation Monolithic ceramic bodies using modified hydrogen silsesquioxane resin
JP3070450B2 (ja) * 1995-07-14 2000-07-31 ヤマハ株式会社 多層配線形成法
JP3149739B2 (ja) * 1995-07-14 2001-03-26 ヤマハ株式会社 多層配線形成法
US5707683A (en) * 1996-02-22 1998-01-13 Dow Corning Corporation Electronic coating composition method of coating an electronic substrate, composition and article
US6020410A (en) * 1996-10-29 2000-02-01 Alliedsignal Inc. Stable solution of a silsesquioxane or siloxane resin and a silicone solvent
JP3123449B2 (ja) * 1996-11-01 2001-01-09 ヤマハ株式会社 多層配線形成法
JP3082688B2 (ja) * 1996-11-05 2000-08-28 ヤマハ株式会社 配線形成法
JP3225872B2 (ja) 1996-12-24 2001-11-05 ヤマハ株式会社 酸化シリコン膜形成法
JPH10247686A (ja) * 1996-12-30 1998-09-14 Yamaha Corp 多層配線形成法
US5707681A (en) * 1997-02-07 1998-01-13 Dow Corning Corporation Method of producing coatings on electronic substrates
EP0857705B1 (en) * 1997-02-07 2002-07-31 Dow Corning Corporation Method of producing coatings on electronic substrates
US6743856B1 (en) 1997-04-21 2004-06-01 Honeywell International Inc. Synthesis of siloxane resins
US6218497B1 (en) 1997-04-21 2001-04-17 Alliedsignal Inc. Organohydridosiloxane resins with low organic content
US6143855A (en) 1997-04-21 2000-11-07 Alliedsignal Inc. Organohydridosiloxane resins with high organic content
US6015457A (en) * 1997-04-21 2000-01-18 Alliedsignal Inc. Stable inorganic polymers
JP3164019B2 (ja) 1997-05-21 2001-05-08 日本電気株式会社 酸化シリコン膜およびその形成方法と成膜装置
US5866197A (en) * 1997-06-06 1999-02-02 Dow Corning Corporation Method for producing thick crack-free coating from hydrogen silsequioxane resin
TW392288B (en) * 1997-06-06 2000-06-01 Dow Corning Thermally stable dielectric coatings
US5866945A (en) * 1997-10-16 1999-02-02 Advanced Micro Devices Borderless vias with HSQ gap filled patterned metal layers
US6018002A (en) * 1998-02-06 2000-01-25 Dow Corning Corporation Photoluminescent material from hydrogen silsesquioxane resin
US6218020B1 (en) 1999-01-07 2001-04-17 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with high organic content
US6177199B1 (en) 1999-01-07 2001-01-23 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with low organic content
US5906859A (en) * 1998-07-10 1999-05-25 Dow Corning Corporation Method for producing low dielectric coatings from hydrogen silsequioxane resin
US6136729A (en) * 1998-08-12 2000-10-24 Advanced Micro Devices, Inc. Method for improving semiconductor dielectrics
US6197703B1 (en) 1998-08-17 2001-03-06 Advanced Micro Devices, Inc. Apparatus and method for manufacturing semiconductors using low dielectric constant materials
US6281115B1 (en) 1998-11-16 2001-08-28 Industrial Technology Research Institute Sidewall protection for a via hole formed in a photosensitive, low dielectric constant layer
US6177143B1 (en) 1999-01-06 2001-01-23 Allied Signal Inc Electron beam treatment of siloxane resins
JP3125781B2 (ja) * 1999-03-03 2001-01-22 ヤマハ株式会社 半導体装置の製法
US6472076B1 (en) 1999-10-18 2002-10-29 Honeywell International Inc. Deposition of organosilsesquioxane films
US6440550B1 (en) 1999-10-18 2002-08-27 Honeywell International Inc. Deposition of fluorosilsesquioxane films
JP2001214127A (ja) * 2000-01-31 2001-08-07 Dow Corning Toray Silicone Co Ltd 電気絶縁性薄膜形成性樹脂組成物、および電気絶縁性薄膜の形成方法
JP2001291427A (ja) * 2000-04-06 2001-10-19 Dow Corning Toray Silicone Co Ltd 電気絶縁性薄膜形成性樹脂組成物、および電気絶縁性薄膜の形成方法
US7439111B2 (en) * 2004-09-29 2008-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2013017132A1 (en) * 2011-07-29 2013-02-07 Inmold Biosystems A/S Reactive silicon oxide precursor facilitated anti-corrosion treatment
EP2719671A1 (de) * 2012-10-15 2014-04-16 Glashandelsgesellschaft Profi mbH Beschichetes Glas

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615272A (en) * 1968-11-04 1971-10-26 Dow Corning Condensed soluble hydrogensilsesquioxane resin
JPS6086017A (ja) * 1983-10-17 1985-05-15 Fujitsu Ltd ポリハイドロジエンシルセスキオキサンの製法
CA2010335A1 (en) * 1989-03-09 1990-09-09 Ronald H. Baney Method for protective coating superconductors
CA2027031A1 (en) * 1989-10-18 1991-04-19 Loren A. Haluska Hermetic substrate coatings in an inert gas atmosphere
US5118530A (en) * 1990-11-28 1992-06-02 Dow Corning Corporation Use of hydrogen silsesquioxane resin fractions as coating materials
US5145723A (en) * 1991-06-05 1992-09-08 Dow Corning Corporation Process for coating a substrate with silica
CA2088107A1 (en) * 1992-02-24 1993-08-25 Ronald Howard Baney Silicone infiltrated ceramic nanocomposite coatings

Also Published As

Publication number Publication date
DE69309634T2 (de) 1997-10-16
JP3174416B2 (ja) 2001-06-11
US5370904A (en) 1994-12-06
DE69309634D1 (de) 1997-05-15
EP0604779A1 (en) 1994-07-06
JPH06177122A (ja) 1994-06-24
KR100282684B1 (ko) 2001-03-02
TW247367B (ko) 1995-05-11
EP0604779B1 (en) 1997-04-09

Similar Documents

Publication Publication Date Title
KR940014263A (ko) 산화실리콘막 형성방법
KR940014264A (ko) 산화실리콘막 형성방법
KR940016575A (ko) 산화실리콘 막 형성 방법
US3055776A (en) Masking technique
KR980002289A (ko) 마이크로전자 장치용 다층 피막
ES2088420T3 (es) Recubrimiento hermetico de substratos en una atmosfera de gas inerte.
KR920007116A (ko) 내층 절연막 형성방법
JPS5760330A (en) Resin composition
KR960019581A (ko) 집적회로용 절연체와 그 제조 공정
KR970053505A (ko) 반도체장치 및 그 제조방법
KR890702081A (ko) 패턴형성용 재료 및 패턴형성 방법
KR950000921A (ko) 고융점 금속질소화물의 증착방법 및 고융점 금속질소화물을 함유하는 전도막의 형성방법
KR920003445A (ko) 열처리 막 형성장치 및 방법
KR970027019A (ko) 전자장치 보호용 피복물
KR960034488A (ko) 고온 저항을 개선시키기 위한 티타늄 질화물 층의 처리방법
KR920008848A (ko) 표면적이 극대화된 도전층 제조방법
KR920005271A (ko) 반도체장치의 제조방법
JPS55113335A (en) Manufacture of semiconductor device
KR940007970A (ko) 반도체 기판 처리 방법
MY121209A (en) Semiconductor device and production thereof.
KR910007106A (ko) 실리사이드 영역상에 보호 장벽 형성 방법
KR910015005A (ko) 반도체 디바이스 제조 방법
TW367273B (en) Method of producing low dielectric ceramic-like materials
KR910013436A (ko) 반도체소자의 제조방법
KR900013587A (ko) 고융점금속 규화물박막을 가진 반도체장치의 제조방법

Legal Events

Date Code Title Description
N231 Notification of change of applicant
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20121031

Year of fee payment: 13

EXPY Expiration of term