KR20010043918A - 조성물, 막의 제조방법, 및 기능 소자와 이의 제조방법 - Google Patents
조성물, 막의 제조방법, 및 기능 소자와 이의 제조방법 Download PDFInfo
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- KR20010043918A KR20010043918A KR1020007013448A KR20007013448A KR20010043918A KR 20010043918 A KR20010043918 A KR 20010043918A KR 1020007013448 A KR1020007013448 A KR 1020007013448A KR 20007013448 A KR20007013448 A KR 20007013448A KR 20010043918 A KR20010043918 A KR 20010043918A
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Abstract
Description
발광 재료 | 용매 | |
R(적) 잉크 | 화합물 1 0.70g화합물 2 0.2g화합물 6 0.1g | 도데실벤젠 100ml테트랄린 100ml |
G(녹) 잉크 | 화합물 1 0.76g화합물 2 0.2g화합물 4 0.04g | 도데실벤젠 100ml테트랄린 100ml |
B(청) 잉크 | 화합물 1 0.78g화합물 2 0.15g화합물 3 0.07g | 도데실벤젠 100ml테트랄린 100ml |
발광 재료 | 용매 | |
R(적) 잉크 | 화합물 1 0.70g화합물 2 0.2g화합물 5 0.1g | 도데실벤젠 100ml테트랄린 100ml |
G(녹) 잉크 | 화합물 1 0.76g화합물 2 0.2g화합물 4 0.04g | 도데실벤젠 100ml테트랄린 100ml |
B(청) 잉크 | 화합물 1 0.78g화합물 2 0.15g화합물 3 0.07g | 도데실벤젠 100ml테트랄린 100ml |
발광 재료 | 용매 | |
R(적) 잉크 | 화합물 7 0.98g화합물 8 0.02g | 크실렌 200ml |
고분자 화합물(1%wt/v) | 용매 | |||
R(적) | 화합물 10.7g | 화합물 20.2g | 화합물 50.1g | 크실렌100ml |
G(녹) | 화합물 10.76g | 화합물 20.20g | 화합물 40.04g | 크실렌100ml |
B(청) | 화합물 10.78g | 화합물 20.15g | 화합물 30.07g | 크실렌100ml |
고분자 화합물(1%wt/v) | 용매 | |||
R(적) | 화합물 10.7g | 화합물 20.2g | 화합물 50.1g | 메시틸렌100ml |
G(녹) | 화합물 10.76g | 화합물 20.20g | 화합물 40.04g | 메시틸렌100ml |
B(청) | 화합물 10.78g | 화합물 20.15g | 화합물 30.07g | 메시틸렌100ml |
고분자 화합물(1%wt/v) | 용매 | |||
R(적) | 화합물 10.7g | 화합물 20.2g | 화합물 50.1g | 1,2,3,4-테트라메틸벤젠100ml |
G(녹) | 화합물 10.76g | 화합물 20.20g | 화합물 40.04g | 1,2,3,4-테트라메틸벤젠100ml |
B(청) | 화합물 10.78g | 화합물 20.15g | 화합물 30.07g | 1,2,3,4-테트라메틸벤젠100ml |
고분자 화합물(1%wt/v) | 용매 | ||||
R(적) | 화합물 10.7g | 화합물 20.2g | 화합물 50.1g | 디에틸벤젠30ml | 1,2,3,4-테트라메틸벤젠70ml |
G(녹) | 화합물 10.76g | 화합물 20.20g | 화합물 40.04g | 디에틸벤젠30ml | 1,2,3,4-테트라메틸벤젠70ml |
B(청) | 화합물 10.78g | 화합물 20.15g | 화합물 30.07g | 디에틸벤젠300ml | 1,2,3,4-테트라메틸벤젠70ml |
고분자 화합물(1%wt/v) | 용매 | ||||
R(적) | 화합물 10.7g | 화합물 20.2g | 화합물 50.1g | 메시틸렌80ml | 사이클로헥실벤젠20ml |
G(녹) | 화합물 10.76g | 화합물 20.20g | 화합물 40.04g | 메시틸렌80ml | 사이클로헥실벤젠20ml |
B(청) | 화합물 10.78g | 화합물 20.15g | 화합물 30.07g | 메시틸렌80ml | 사이클로헥실벤젠20ml |
고분자 화합물(1%wt/v) | 용매 | ||||
R(적) | 화합물 10.7g | 화합물 20.2g | 화합물 50.1g | 도데실벤젠30ml | 1,2,3,4-테트라메틸벤젠70ml |
G(녹) | 화합물 10.76g | 화합물 20.20g | 화합물 40.04g | 도데실벤젠30ml | 1,2,3,4-테트라메틸벤젠70ml |
B(청) | 화합물 10.78g | 화합물 20.15g | 화합물 30.07g | 도데실벤젠300ml | 1,2,3,4-테트라메틸벤젠70ml |
조성물 | 용액 안정성 | 토출성 | 상 분리 | |
비교품 | 1(R.G.B) | ○ | × | - |
본 발명품 | 2(R.G.B) | ○ | ○ | ○ |
3(R.G.B) | ○ | ◎ | ○ | |
4(R.G.B) | ○ | ◎ | ○ | |
5(R.G.B) | ○ | ◎ | ○ | |
6(R.G.B) | ○ | ◎ | × |
재료 | 함유량(중량%) |
폴리에틸렌디옥시티오펜/폴리스티렌 설폰산 혼합액 | 11.08 |
폴리스티렌 설폰산 | 1.44 |
이소프로필알콜 | 10 |
N-메틸피롤리돈 | 27.48 |
1,3-디메틸-2-이미다졸리디논 | 50 |
Claims (35)
- 하나 이상의 치환기를 갖고 당해 치환기의 총 탄소수가 3 이상인 벤젠 유도체의 적어도 1종을 포함하는 용매와 유기 EL 재료, 실리카 유리의 전구체, 컬러 필터용 재료, 도전성 재료 및 반도체 재료로 이루어진 그룹으로부터 선택된 기능 재료로 이루어짐을 특징으로 하는 조성물.
- 제1항에 있어서, 벤젠 유도체의 비점이 200℃ 이상인 조성물.
- 제2항에 있어서, 벤젠 유도체가 도데실벤젠인 조성물.
- 제1항 내지 제3항 중의 어느 한 항에 있어서, 벤젠 유도체의 적어도 1종을 포함하는 용매가 비점이 140℃ 이상인 다른 용매를 함유하는 조성물.
- 제4항에 있어서, 벤젠 유도체가 도데실벤젠이고, 비점이 140℃ 이상인 다른 용매가 시멘, 테트랄린, 쿠멘, 데칼린, 듀렌, 사이클로헥실벤젠, 디헥실벤젠, 테트라메틸벤젠 및 디부틸벤젠으로 이루어진 그룹으로부터 선택된 적어도 1종인 조성물.
- 제1항 내지 제3항 중의 어느 한 항에 있어서, 벤젠 유도체의 적어도 1종을 포함하는 용매가 비점이 180℃ 이상인 다른 용매를 함유하는 조성물.
- 제1항에 있어서, 벤젠 유도체의 증기압(실온)이 0.10 내지 10mmHg인 조성물.
- 제7항에 있어서, 벤젠 유도체가 1,2,3,4-테트라메틸벤젠인 조성물.
- 제7항에 있어서, 벤젠 유도체가 증기압 0.10 내지 0.50mmHg의 벤젠 유도체의 적어도 1종과 증기압 0.50 내지 10mmHg의 벤젠 유도체의 적어도 1종과의 혼합물인 조성물.
- 제9항에 있어서, 증기압 0.10 내지 0.50mmHg의 벤젠 유도체가 테트라메틸벤젠인 조성물.
- 제9항에 있어서, 증기압 0.10 내지 0.50mmHg의 벤젠 유도체가 사이클로헥실벤젠인 조성물.
- 제9항 내지 제11항 중의 어느 한 항에 있어서, 증기압 0.50 내지 10mmHg의 벤젠 유도체가 디에틸벤젠 및/또는 메시틸렌인 조성물.
- 제1항 내지 제12항 중의 어느 한 항에 있어서, 기능 재료가 유기 EL 재료인 조성물.
- 제13항에 있어서, 유기 EL 재료가 플루오렌계 고분자 유도체의 적어도 1종인 조성물.
- 제14항에 있어서, 플루오렌계 고분자 유도체가 다음 화합물 1 내지 화합물 5인 조성물.화합물 1화합물 2화합물 3화합물 4화합물 5
- 제1항 내지 제12항 중의 어느 한 항에 있어서, 기능 재료가 실리카 유리의 전구체인 조성물.
- 제1항 내지 제12항 중의 어느 한 항에 있어서, 기능 재료가 컬러 필터용 재료인 조성물.
- 제1항 내지 제17항 중의 어느 한 항에 있어서, 잉크젯법에 사용되는 조성물.
- 제1항 내지 제18항 중의 어느 한 항에 따르는 조성물을 기재 위에 공급하여 분산시킨 후, 당해 기재를 열처리함을 특징으로 하는, 막의 제조방법.
- 제19항에 있어서, 조성물을 토출 장치에 의해 기판 위에 토출시켜 분산시킨 후, 기판을 토출시의 온도보다 고온으로 처리하는 막의 제조방법.
- 제20항에 있어서, 고온 처리시 가압하면서 가열하는 막의 제조방법.
- 제20항 또는 제21항에 있어서, 고온 처리 직후 감압시켜 용매를 제거하는 막의 제조방법.
- 제20항 내지 제22항 중의 어느 한 항에 있어서, 토출 장치가 잉크젯 프린팅 장치인 막의 제조방법.
- 제1항 내지 제18항 중의 어느 한 항에 따르는 조성물을 사용하여 형성됨을 특징으로 하는 기능 소자.
- 제24항에 있어서, 표시 소자인 기능 소자.
- 제25항에 있어서, 표시 소자가 제1 전극과 제2 전극 사이에 발광 재료층을 구비하고, 당해 발광 재료층이 위의 조성물을 사용하여 형성되어 이루어지는 기능 소자.
- 제26항에 있어서, 제1 전극과 발광 재료층 사이에 정공 주입/수송층을 설치하여 이루어지는 기능 소자.
- 제25항 내지 제27항 중의 어느 한 항에 있어서, 표시 소자가 유기 EL 소자인 기능 소자.
- 제26항에 따르는 기능 소자의 제조방법으로서, 제1 전극을 갖는 기재 위에 조성물을 선택적으로 공급하여 발광 재료층 패턴을 형성하고, 계속해서 당해 발광 재료층 패턴 위에 제2 전극을 형성함을 특징으로 하는, 기능 소자의 제조방법.
- 제29항에 있어서, 조성물을 선택적으로 공급하고 열처리하여 발광 재료층 패턴을 형성하는, 기능 소자의 제조방법.
- 제30항에 있어서, 열 처리를 40 내지 200℃의 온도 범위에서 행하는, 기능 소자의 제조방법.
- 제30항 또는 제31항에 있어서, 열 처리를 가압하에 행하는, 기능 소자의 제조방법.
- 제30항 내지 제32항 중의 어느 한 항에 있어서, 열 처리에 있어서 조성물이 완전히 건조되기 전에 감압하는, 기능 소자의 제조방법.
- 제29항 내지 제33항 중의 어느 한 항에 있어서, 제1 전극을 갖는 기재 위에 극성 용매를 포함한 용액을 사용하여 잉크젯법으로 정공 주입/수송층을 형성한 후, 당해 정공 주입/수송층 위에 발광 재료층 패턴을 형성하여 유기 EL 소자를 수득하는, 기능 소자의 제조방법.
- 제29항 내지 제33항 중의 어느 한 항에 있어서, 기능 소자로서 유기 EL 소자를 수득하는, 기능 소자의 제조방법.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP99-086944 | 1999-03-29 | ||
JP8694499 | 1999-03-29 | ||
JP25048699 | 1999-09-03 | ||
JP99-250486 | 1999-09-03 |
Publications (2)
Publication Number | Publication Date |
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KR20010043918A true KR20010043918A (ko) | 2001-05-25 |
KR100495740B1 KR100495740B1 (ko) | 2005-06-17 |
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KR10-2000-7013448A KR100495740B1 (ko) | 1999-03-29 | 2000-03-29 | 조성물, 막의 제조방법, 및 기능 소자와 이의 제조방법 |
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EP (1) | EP1083775B1 (ko) |
JP (3) | JP4486261B2 (ko) |
KR (1) | KR100495740B1 (ko) |
CN (1) | CN1310930A (ko) |
DE (1) | DE60045092D1 (ko) |
HK (1) | HK1128714A1 (ko) |
TW (1) | TW508975B (ko) |
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- 2000-03-29 CN CN00800987A patent/CN1310930A/zh active Pending
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100817128B1 (ko) * | 2001-12-31 | 2008-03-27 | 엘지.필립스 엘시디 주식회사 | 유기 발광층 성막용 용매제 |
US7166242B2 (en) | 2002-08-02 | 2007-01-23 | Seiko Epson Corporation | Composition, organic conductive layer including composition, method for manufacturing organic conductive layers, organic EL element including organic conductive layer, method for manufacturing organic EL elements semiconductor element including organic conductive layer, method for manufacturing semiconductor elements, electronic device, and electronic apparatus |
KR100745547B1 (ko) * | 2005-09-28 | 2007-08-03 | 세이코 엡슨 가부시키가이샤 | 막 형성 방법, 유기 일렉트로루미네선스 장치의 제조 방법,유기 일렉트로루미네선스 장치 및 전자 기기 |
KR100828870B1 (ko) * | 2005-12-20 | 2008-05-09 | 가시오게산키 가부시키가이샤 | 표시장치 및 그 제조방법 |
KR20100126781A (ko) * | 2008-03-03 | 2010-12-02 | 캠브리지 디스플레이 테크놀로지 리미티드 | 인쇄 조성물용 용매 |
KR20200100875A (ko) * | 2012-06-19 | 2020-08-26 | 캠브리지 디스플레이 테크놀로지 리미티드 | 반도체 층을 제조하는 방법 |
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Publication number | Publication date |
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EP1083775A4 (en) | 2005-12-07 |
CN1310930A (zh) | 2001-08-29 |
US8231932B2 (en) | 2012-07-31 |
US8187669B2 (en) | 2012-05-29 |
WO2000059267A1 (fr) | 2000-10-05 |
JP4486261B2 (ja) | 2010-06-23 |
EP1083775A1 (en) | 2001-03-14 |
US9620719B2 (en) | 2017-04-11 |
JP5286339B2 (ja) | 2013-09-11 |
EP1083775B1 (en) | 2010-10-13 |
US20120263867A1 (en) | 2012-10-18 |
JP4731629B2 (ja) | 2011-07-27 |
JP2011042794A (ja) | 2011-03-03 |
US20050156148A1 (en) | 2005-07-21 |
US20090186161A1 (en) | 2009-07-23 |
TW508975B (en) | 2002-11-01 |
US6878312B1 (en) | 2005-04-12 |
JP2010157751A (ja) | 2010-07-15 |
KR100495740B1 (ko) | 2005-06-17 |
DE60045092D1 (de) | 2010-11-25 |
US20080305245A1 (en) | 2008-12-11 |
HK1128714A1 (en) | 2009-11-06 |
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