KR100519821B1 - 적층 세라믹 콘덴서용 유전체 조성물, 적층 세라믹콘덴서, 및 적층 세라믹 콘덴서의 제조방법 - Google Patents
적층 세라믹 콘덴서용 유전체 조성물, 적층 세라믹콘덴서, 및 적층 세라믹 콘덴서의 제조방법 Download PDFInfo
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- KR100519821B1 KR100519821B1 KR10-2003-0093145A KR20030093145A KR100519821B1 KR 100519821 B1 KR100519821 B1 KR 100519821B1 KR 20030093145 A KR20030093145 A KR 20030093145A KR 100519821 B1 KR100519821 B1 KR 100519821B1
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- South Korea
- Prior art keywords
- multilayer ceramic
- dielectric
- composition
- ceramic capacitor
- manufacturing
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- 239000000203 mixture Substances 0.000 title claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims description 15
- 239000000919 ceramic Substances 0.000 title claims description 14
- 239000003985 ceramic capacitor Substances 0.000 claims abstract description 58
- 238000010304 firing Methods 0.000 claims abstract description 22
- 238000005245 sintering Methods 0.000 claims description 50
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 19
- 229910002113 barium titanate Inorganic materials 0.000 claims description 19
- 239000002245 particle Substances 0.000 claims description 15
- 239000011521 glass Substances 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 claims description 4
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 claims description 2
- 230000008859 change Effects 0.000 abstract description 9
- 230000002776 aggregation Effects 0.000 abstract description 5
- 230000006866 deterioration Effects 0.000 abstract description 3
- 238000005054 agglomeration Methods 0.000 abstract description 2
- 230000007547 defect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 59
- 230000000052 comparative effect Effects 0.000 description 37
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 14
- 238000002156 mixing Methods 0.000 description 12
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 10
- 230000007423 decrease Effects 0.000 description 9
- 238000009413 insulation Methods 0.000 description 9
- 244000025254 Cannabis sativa Species 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000000227 grinding Methods 0.000 description 8
- 239000002002 slurry Substances 0.000 description 7
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 235000019441 ethanol Nutrition 0.000 description 6
- 230000001133 acceleration Effects 0.000 description 5
- 238000001354 calcination Methods 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 229910000423 chromium oxide Inorganic materials 0.000 description 4
- 239000002270 dispersing agent Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000004220 aggregation Methods 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000001238 wet grinding Methods 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 239000011258 core-shell material Substances 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009837 dry grinding Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Abstract
Description
그라스 종류 | BaO(x) | ZrO2(y) | SiO2(z) | CaO(y) | 첨가제 형태 |
발명재 G1 | 0.120 | 0.160 | 0.720 | - | 그라스 |
발명재 G2 | 0.150 | 0.145 | 0.705 | - | 그라스 |
발명재 G3 | 0.130 | 0.150 | 0.720 | - | 하소 |
비교재 G1 | 0.310 | 0.07 | 0.620 | - | 그라스 |
비교재 G2 | 0.350 | 0.145 | 0.505 | - | 그라스 |
비교재 G3 | 0.20 | - | 0.60 | 0.20 | 그라스 |
시편 No. | BaTiO3 100mol 기준 | 소성온도(℃) | |||||
MgCO3 | Y2O3 | 그라스 소결조제 | Cr2O3 | Mn2V207 | |||
종류 | 첨가량 | ||||||
발명재1 | 1.2 | 0.8 | 발명재 G1 | 1.3 | 0.2 | 0.1 | 1200 |
발명재2 | 1.2 | 0.9 | 발명재 G2 | 1.3 | 0.2 | 0.1 | 1200 |
비교재3 | 1.2 | 0.8 | 비교재 G1 | 1.3 | 0.2 | 0.1 | 1200 |
비교재4 | 1.2 | 0.8 | 비교재 G2 | 1.3 | 0.2 | 0.1 | 1200 |
발명재5 | 1.2 | 0.8 | 발명재 G1 | 1.3 | 0.2 | 0.1 | 1230 |
발명재6 | 1.2 | 0.9 | 발명재 G2 | 1.3 | 0.2 | 0.1 | 1230 |
비교재7 | 0.8 | 0.4 | 발명재 G1 | 3.2 | 0.2 | 0.1 | 1230 |
비교재8 | 0.6 | 0.4 | 발명재 G1 | 3.0 | 0.2 | 0.1 | 1230 |
발명재9 | 1.0 | 0.4 | 발명재 G1 | 1.3 | 0.1 | 0.05 | 1200 |
발명재10 | 1.0 | 0.6 | 발명재 G1 | 1.0 | 0.05 | 0.08 | 1200 |
발명재11 | 0.8 | 1.2 | 발명재 G1 | 1.3 | 0.08 | 0.08 | 1230 |
비교재12 | 0.8 | 0.2 | 발명재 G1 | 1.3 | 0.0 | 0.08 | 1230 |
비교재13 | 1.3 | 1.3 | 발명재 G1 | 0.4 | 0.08 | 0.1 | 1200 |
발명재14 | 1.2 | 0.7 | 발명재 G2 | 1.5 | 0.2 | 0.1 | 1230 |
발명재15 | 1.3 | 1.0 | 발명재 G2 | 1.5 | 0.1 | 0.08 | 1230 |
발명재16 | 1.3 | 0.8 | 발명재 G2 | 1.3 | 0.08 | 0.1 | 1230 |
비교재17 | 1.2 | 0.7 | 비교재 G3 | 1.3 | 0.2 | 0.1 | 1230 |
비교재18 | 1.2 | 0.8 | 비교재 G3 | 1.5 | 0.08 | 0.05 | 1290 |
발명재19 | 1.2 | 0.7 | 발명재 G3 | 1.3 | 0.2 | 0.1 | 1200 |
발명재20 | 1.4 | 0.8 | 발명재 G3 | 1.5 | 0.08 | 0.1 | 1230 |
시편 No. | MgCO3 | Y2O3 | BaSiO3 | ZrO2 | Cr2O3 | Mn2V207 | 소성온도(℃) |
비교재 21 | 1.3 | 0.7 | 1.3 | 0.2 | 0.2 | 0.1 | 1200 |
비교재 22 | 1.3 | 0.7 | 1.3 | 0.2 | 0.2 | 0.1 | 1290 |
시편 No. | 유전율 (25℃) | 유전손실(%), 25℃ | 유전율 온도계수 | 절연저항 ×109Ω | 비고 | |
-55℃ | 85℃ | |||||
발명재1 | 3010 | 6.82 | -3.7 | -7.8 | 0.96 | 양호 |
발명재2 | 2946 | 7.53 | -2.9 | -11.6 | 0.72 | 양호 |
비교재3 | 2746 | 12.53 | -1.5 | -13.6 | 0.17 | 소결성 저하 |
비교재4 | 2567 | 12.78 | - | - | - | 소결성 저하 |
발명재5 | 2910 | 6.47 | -3.9 | -6.4 | 1.06 | 양호 |
발명재6 | 2880 | 5.97 | -3.1 | -10.2 | 1.20 | 양호 |
비교재7 | 2218 | 17.12 | - | - | - | 과소성 |
비교재8 | 2334 | 13.71 | - | - | - | 과소성 |
발명재9 | 3008 | 6.54 | 3.45 | -12.5 | 0.43 | 양호 |
발명재10 | 3129 | 6.36 | -4.21 | -8.3 | 0.84 | 양호 |
발명재11 | 2764 | 5.84 | -3.75 | -8.1 | 1.14 | 양호 |
비교재12 | - | - | - | - | - | 반도체화 |
비교재13 | - | - | - | - | - | 미소성 |
발명재14 | 2987 | 4.12 | -4.43 | -11.5 | 1.09 | 양호 |
발명재15 | 2563 | 3.97 | -4.12 | -13.1 | 1.43 | 양호 |
발명재16 | 2789 | 4.34 | -4.07 | -13.9 | 1.02 | 양호 |
비교재17 | - | - | - | - | - | 미소성 |
비교재18 | 2557 | 3.51 | -16.79 | 1.17 | 1.17 | 전극끊김 심함 |
발명재19 | 2886 | 4.27 | -11.38 | 1.11 | 1.11 | 양호 |
발명재20 | 2812 | 4.23 | -9.97 | 1.23 | 1.23 | 양호 |
비교재21 | - | - | - | - | - | 미소성 |
비교재22 | 2661 | 3.98 | 1.06 | 1.06 | 1.06 | 전극끊김 심함 |
Claims (16)
- 티탄산 바륨(BaTiO3), 탄산 마그네슘(MgCO3), 산화 이트륨(Y2O3),산화크롬(Cr2O3), Mn2V2O7, 및 소결조제인 xBaO-yZrO 2-zSiO2(0.1≤x≤0.3, 0.1≤y≤0.3, 0.4≤z≤0.8, x + y + z = 1)를 함유하고; 그리고 상기 성분들의 조성비 는 그 성분들을, aBaTiO3-bMgCO3-cY2O3-dCr2O3 -e(Mn2V2O7)-f(xBaO-yZrO2-zSiO2)의 조성식으로 표현할 때, 몰비로, a=100, 0.1≤b≤3.0, 0.3≤c≤2.0, 0.05≤d≤0.2, 0.01≤e≤1.5, 0.5≤f≤3.0의 조건을 만족하도록 이루어진 것을 특징으로 하는 적층 세라믹 콘덴서용 유전체 조성물
- 제1항에 있어서, 티탄산 바륨(BaTiO3)의 입자크기가 0.4㎛이하인 것을 특징으로 하는 적층 세라믹 콘덴서용 유전체 조성물
- 재2항에 있어서, 티탄산 바륨(BaTiO3)의 입자크기가 0.2∼0.4㎛인 것을 특징으로 하는 적층 세라믹 콘덴서용 유전체 조성물
- 제1항에서 제3항중의 어느 한 항에 있어서, 소결조제가 그라스 상태인 것을 특징으로 하는 적층 세라믹 콘덴서용 유전체 조성물
- 제1항에서 제3항중의 어느 한 항에 있어서, 소결조제가 하소된 상태인 것을 특징으로 하는 적층 세라믹 콘덴서용 유전체 조성물
- 제4항에 있어서, 소결조제의 입경이 1㎛이하인 것을 특징으로 하는 적층 세라믹 콘덴서용 유전체 조성물
- 내부전극과 유전체층이 교대로 적층되어 있는 적층형 세라믹 콘덴서에 있어서, 유전체층이 하기 조성식을 갖는 적층 세라믹 콘덴서용 유전체 조성물로 이루어진 것을 특징으로 하는 적층 세라믹 콘덴서[조성식]aBaTiO3-bMgCO3-cY2O3-dCr2O3-e(Mn2 V2O7)-f(xBaO-yZrO2-zSiO2)[단, 상기 식에서, 몰비로, a=100, 0.1≤b≤3.0, 0.3≤c≤2.0, 0.05≤d≤0.2, 0.01≤e≤1.5, 0.5≤f≤3.0, 0.1≤x≤0.3, 0.1≤y≤0.3,0.4≤z≤0.8, x + y + z = 1를 만족시킴]
- 제7항에 있어서, 내부전극이 Ni전극인 것을 특징으로 하는 적층 세라믹 콘덴서
- 제7항 또는 제8항에 있어서, 유전체층의 두께가 4㎛이하인 것을 특징으로 하는 적층 세라믹 콘덴서
- 제7항 또는 제8항에 있어서, 유전체층의 적층수가 300이상인 것을 특징으로 하는 적층 세라믹 콘덴서
- 제9항에 있어서, 유전체층의 적층수가 300이상인 것을 특징으로 하는 적층 세라믹 콘덴서
- 유전체 시트에 내부전극을 인쇄하고, 내부전극이 인쇄된 유전체 시트를 적층하여 소성하는 단계를 포함하는 적층 세라믹 콘덴서의 제조방법에 있어서,상기 유전체 시트가 하기 조성식을 갖는 유전체 조성물로 형성되는 것을 특징으로 하는 적층 세라믹 콘덴서의 제조방법[조성식]aBaTiO3-bMgCO3-cY2O3-dCr2O3-e(Mn2 V2O7)-f(xBaO-yZrO2-zSiO2)[단, 상기 식에서, 몰비로, a=100, 0.1≤b≤3.0, 0.3≤c≤2.0, 0.05≤d≤0.2, 0.01≤e≤1.5, 0.5≤f≤3.0, 0.1≤x≤0.3, 0.1≤y≤0.3,0.4≤z≤0.8, x + y + z = 1를 만족시킴]
- 제12항에 있어서, 내부전극이 Ni전극인 것을 특징으로 하는 적층 세라믹 콘덴서의 제조방법
- 제12항 또는 제13항에 있어서, 유전체 시트의 두께가 4㎛이하인 것을 특징으로 하는 적층 세라믹 콘덴서의 제조방법
- 제12항 또는 제13항에 있어서, 유전체 시트의 적층수가 300이상인 것을 특징으로 하는 적층 세라믹 콘덴서의 제조방법
- 제12항 또는 제13항에 있어서, 소성온도는 1170∼1230℃이고, 그리고 소성분위기중 산소분압은 10-11~ 10-12기압인 것을 특징으로 하는 적층 세라믹 콘덴서의 제조방법
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KR102032349B1 (ko) * | 2018-03-22 | 2019-10-16 | 주식회사 베이스 | 적층 세라믹 콘덴서용 유전체 조성물의 제조방법 |
KR20190121229A (ko) * | 2018-12-12 | 2019-10-25 | 삼성전기주식회사 | 적층 세라믹 전자부품 |
JP7484046B2 (ja) * | 2019-12-03 | 2024-05-16 | 太陽誘電株式会社 | セラミック電子部品およびその製造方法 |
CN113880569A (zh) * | 2021-10-11 | 2022-01-04 | 深圳市信维通信股份有限公司 | 一种多层片式陶瓷电容器的介质材料及其制备方法 |
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JPS5771866A (en) | 1980-10-16 | 1982-05-04 | Tdk Electronics Co Ltd | Non-reducing dielectric ceramic composition |
JPS6136170A (ja) | 1984-07-27 | 1986-02-20 | ティーディーケイ株式会社 | 誘電体磁器組成物及びその製造法 |
JPS61250905A (ja) | 1985-04-26 | 1986-11-08 | ティーディーケイ株式会社 | 誘電体磁器組成物及びその製造法 |
JP3207847B2 (ja) | 1989-10-18 | 2001-09-10 | ティーディーケイ株式会社 | 積層型セラミックチップコンデンサ |
JP3568030B2 (ja) | 1999-02-26 | 2004-09-22 | Tdk株式会社 | 誘電体磁器組成物の製造方法と誘電体層含有電子部品の製造方法 |
TWI299328B (en) * | 2002-01-15 | 2008-08-01 | Tdk Corp | Dielectric ceramic composition and multi-layer ceramic capacitor |
US6777363B2 (en) * | 2002-07-05 | 2004-08-17 | Samsung Electro-Mechanics Co., Ltd. | Non-reducable, low temperature dielectric ceramic composition, capacitor and method of preparing |
KR100471155B1 (ko) * | 2002-12-03 | 2005-03-10 | 삼성전기주식회사 | 저온소성 유전체 자기조성물과 이를 이용한 적층세라믹커패시터 |
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KR101064243B1 (ko) * | 2006-11-29 | 2011-09-14 | 쿄세라 코포레이션 | 적층 세라믹 콘덴서 |
KR101070068B1 (ko) * | 2009-12-24 | 2011-10-04 | 삼성전기주식회사 | 적층 세라믹 커패시터 |
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JP2005179174A (ja) | 2005-07-07 |
US6876538B1 (en) | 2005-04-05 |
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