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JPWO2021059409A1 - - Google Patents

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Publication number
JPWO2021059409A1
JPWO2021059409A1 JP2021548057A JP2021548057A JPWO2021059409A1 JP WO2021059409 A1 JPWO2021059409 A1 JP WO2021059409A1 JP 2021548057 A JP2021548057 A JP 2021548057A JP 2021548057 A JP2021548057 A JP 2021548057A JP WO2021059409 A1 JPWO2021059409 A1 JP WO2021059409A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021548057A
Other versions
JP7231869B2 (ja
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Publication of JPWO2021059409A1 publication Critical patent/JPWO2021059409A1/ja
Application granted granted Critical
Publication of JP7231869B2 publication Critical patent/JP7231869B2/ja
Active legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N13/00—Stereoscopic video systems; Multi-view video systems; Details thereof
    • H04N13/20—Image signal generators
    • H04N13/204—Image signal generators using stereoscopic image cameras
    • H04N13/207—Image signal generators using stereoscopic image cameras using a single 2D image sensor
    • H04N13/232—Image signal generators using stereoscopic image cameras using a single 2D image sensor using fly-eye lenses, e.g. arrangements of circular lenses
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Color Television Image Signal Generators (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Ink Jet (AREA)
  • Lubrication Of Internal Combustion Engines (AREA)
  • Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
JP2021548057A 2019-09-25 2019-09-25 撮像素子および撮像装置 Active JP7231869B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2019/037677 WO2021059409A1 (ja) 2019-09-25 2019-09-25 撮像素子および撮像装置

Publications (2)

Publication Number Publication Date
JPWO2021059409A1 true JPWO2021059409A1 (ja) 2021-04-01
JP7231869B2 JP7231869B2 (ja) 2023-03-02

Family

ID=75165647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021548057A Active JP7231869B2 (ja) 2019-09-25 2019-09-25 撮像素子および撮像装置

Country Status (7)

Country Link
US (1) US20220360759A1 (ja)
EP (1) EP4037299A4 (ja)
JP (1) JP7231869B2 (ja)
KR (1) KR20220051233A (ja)
CN (1) CN114503538A (ja)
TW (1) TWI772902B (ja)
WO (1) WO2021059409A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220417474A1 (en) * 2021-06-28 2022-12-29 Qualcomm Incorporated Macroscopic refracting lens image sensor
WO2023013307A1 (ja) * 2021-08-06 2023-02-09 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器

Citations (4)

* Cited by examiner, † Cited by third party
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WO2009019818A1 (ja) * 2007-08-06 2009-02-12 Panasonic Corporation 撮像用光検出装置
JP2012015424A (ja) * 2010-07-02 2012-01-19 Panasonic Corp 固体撮像装置
WO2014061173A1 (ja) * 2012-10-18 2014-04-24 パナソニック株式会社 固体撮像素子
JP2014138142A (ja) * 2013-01-18 2014-07-28 Panasonic Corp 固体撮像素子および撮像装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
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JP3742775B2 (ja) * 2002-02-21 2006-02-08 富士フイルムマイクロデバイス株式会社 固体撮像素子
JP2007109801A (ja) * 2005-10-12 2007-04-26 Sumitomo Electric Ind Ltd 固体撮像装置とその製造方法
KR20110037925A (ko) * 2008-08-05 2011-04-13 파나소닉 주식회사 촬상용 광 검출 장치
TWI397175B (zh) * 2009-02-09 2013-05-21 Sony Corp 固體攝像裝置、攝相機、電子機器、及固體攝像裝置之製造方法
KR101776955B1 (ko) * 2009-02-10 2017-09-08 소니 주식회사 고체 촬상 장치와 그 제조 방법, 및 전자 기기
JPWO2011010455A1 (ja) * 2009-07-24 2012-12-27 パナソニック株式会社 撮像装置および固体撮像素子
JP5760811B2 (ja) * 2011-07-28 2015-08-12 ソニー株式会社 固体撮像素子および撮像システム
JP2014022448A (ja) * 2012-07-13 2014-02-03 Toshiba Corp 固体撮像装置
US9425229B2 (en) * 2012-09-03 2016-08-23 Panasonic Intellectual Property Corporation Of America Solid-state imaging element, imaging device, and signal processing method including a dispersing element array and microlens array
US9905605B2 (en) * 2015-10-15 2018-02-27 Taiwan Semiconductor Manufacturing Co., Ltd. Phase detection autofocus techniques
CN109564928B (zh) * 2016-08-09 2022-12-16 索尼公司 固态摄像元件、固态摄像元件用光瞳校正方法、摄像装置和信息处理装置
JP6987529B2 (ja) * 2017-05-15 2022-01-05 ソニーセミコンダクタソリューションズ株式会社 撮像素子、撮像素子の製造方法、電子機器、及び、撮像モジュール
JP6976341B2 (ja) * 2017-09-11 2021-12-08 富士フイルム株式会社 近赤外線吸収有機顔料、樹脂組成物、近赤外線吸収有機顔料の製造方法、近赤外線吸収有機顔料の分光調整方法、膜、積層体、近赤外線カットフィルタ、近赤外線透過フィルタ、固体撮像素子、画像表示装置および赤外線センサ
JP2019091745A (ja) * 2017-11-13 2019-06-13 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
KR102424652B1 (ko) * 2017-11-17 2022-07-25 삼성전자주식회사 이미지 센서
WO2019124562A1 (ja) * 2017-12-22 2019-06-27 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
CN108600660B (zh) * 2018-05-16 2020-06-30 上海集成电路研发中心有限公司 一种暗电流实时校准的图像传感器及校准方法
US10638063B2 (en) * 2018-07-11 2020-04-28 Semiconductor Components Industries, Llc Methods and apparatus for increased dynamic range of an image sensor
KR102553314B1 (ko) * 2018-08-29 2023-07-10 삼성전자주식회사 이미지 센서
US11276721B2 (en) * 2019-06-10 2022-03-15 Gigajot Technology, Inc. CMOS image sensors with per-pixel micro-lens arrays

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009019818A1 (ja) * 2007-08-06 2009-02-12 Panasonic Corporation 撮像用光検出装置
JP2012015424A (ja) * 2010-07-02 2012-01-19 Panasonic Corp 固体撮像装置
WO2014061173A1 (ja) * 2012-10-18 2014-04-24 パナソニック株式会社 固体撮像素子
JP2014138142A (ja) * 2013-01-18 2014-07-28 Panasonic Corp 固体撮像素子および撮像装置

Also Published As

Publication number Publication date
TWI772902B (zh) 2022-08-01
US20220360759A1 (en) 2022-11-10
EP4037299A1 (en) 2022-08-03
JP7231869B2 (ja) 2023-03-02
KR20220051233A (ko) 2022-04-26
TW202119094A (zh) 2021-05-16
WO2021059409A1 (ja) 2021-04-01
CN114503538A (zh) 2022-05-13
EP4037299A4 (en) 2023-06-14

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