JPS63186775U - - Google Patents
Info
- Publication number
- JPS63186775U JPS63186775U JP7588787U JP7588787U JPS63186775U JP S63186775 U JPS63186775 U JP S63186775U JP 7588787 U JP7588787 U JP 7588787U JP 7588787 U JP7588787 U JP 7588787U JP S63186775 U JPS63186775 U JP S63186775U
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- liquid phase
- substrate
- silicon melt
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 2
- 239000007791 liquid phase Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910002804 graphite Inorganic materials 0.000 claims 1
- 239000010439 graphite Substances 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
図は本考案実施例装置を示し、１は反応管、３
はるつぼ、６は基板、７はＳｉ融液、８はるつぼ
内の凹凸面である。
The figure shows an apparatus according to an embodiment of the present invention, in which 1 is a reaction tube, 3 is a reaction tube;
A crucible, 6 a substrate, 7 a Si melt, and 8 an uneven surface inside the crucible.
Claims (1)
浸漬し、前記基板上に炭化ケイ素単結晶を液相エ
ピタキシヤル成長させる装置において、ケイ素融
液に触れる前記るつぼの内面に凹凸が形成されて
いる事を特徴とする液相エピタキシヤル成長装置
。 In an apparatus for immersing a single crystal substrate in a silicon melt in a graphite crucible and growing a silicon carbide single crystal on the substrate in a liquid phase, irregularities are formed on the inner surface of the crucible that comes into contact with the silicon melt. A liquid phase epitaxial growth apparatus characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7588787U JPS63186775U (en) | 1987-05-20 | 1987-05-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7588787U JPS63186775U (en) | 1987-05-20 | 1987-05-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63186775U true JPS63186775U (en) | 1988-11-30 |
Family
ID=30922448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7588787U Pending JPS63186775U (en) | 1987-05-20 | 1987-05-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63186775U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011168447A (en) * | 2010-02-18 | 2011-09-01 | Toyota Motor Corp | METHOD FOR PRODUCING SiC SINGLE CRYSTAL |
| WO2017183747A1 (en) * | 2016-04-21 | 2017-10-26 | 한국세라믹기술원 | Crucible for growing solution and method for growing solution inside crucible |
-
1987
- 1987-05-20 JP JP7588787U patent/JPS63186775U/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011168447A (en) * | 2010-02-18 | 2011-09-01 | Toyota Motor Corp | METHOD FOR PRODUCING SiC SINGLE CRYSTAL |
| CN102762780A (en) * | 2010-02-18 | 2012-10-31 | 丰田自动车株式会社 | Method of producing silicon carbide single crystal |
| WO2017183747A1 (en) * | 2016-04-21 | 2017-10-26 | 한국세라믹기술원 | Crucible for growing solution and method for growing solution inside crucible |
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