JPH0165871U - - Google Patents
Info
- Publication number
- JPH0165871U JPH0165871U JP1987160687U JP16068787U JPH0165871U JP H0165871 U JPH0165871 U JP H0165871U JP 1987160687 U JP1987160687 U JP 1987160687U JP 16068787 U JP16068787 U JP 16068787U JP H0165871 U JPH0165871 U JP H0165871U
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial growth
- furnace
- baking
- semiconductor substrate
- epitaxially growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 2
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図は本考案の一実施例によるエピタキシヤ
ル成長装置を示す断面図、第２図は第１図に示す
エピタキシヤル成長装置を用いて成長されたエピ
タキシヤル層及び半導体基板中の不純物濃度分布
を示すグラフ、第３図は従来のバレル型エピタキ
シヤル成長装置を用いた場合におけるＨ２ベーク
及びエピタキシヤル成長時の温度及び圧力の変化
の一例を示すグラフ、第４図は従来のバレル型エ
ピタキシヤル成長装置を示す断面図である。
図面における主要な符号の説明、１：ベーク炉
、２：エピタキシヤル成長炉、４：赤外線ランプ
、５：ミラー、６：半導体基板、７，１０：サセ
プタ。
FIG. 1 is a cross-sectional view showing an epitaxial growth apparatus according to an embodiment of the present invention, and FIG. 2 is an impurity concentration distribution in an epitaxial layer and a semiconductor substrate grown using the epitaxial growth apparatus shown in FIG. 1. Figure 3 is a graph showing an example of changes in temperature and pressure during H2 baking and epitaxial growth using a conventional barrel type epitaxial growth apparatus. FIG. 2 is a sectional view showing a barrel growth device. Explanation of main symbols in the drawings: 1: baking furnace, 2: epitaxial growth furnace, 4: infrared lamp, 5: mirror, 6: semiconductor substrate, 7, 10: susceptor.
Claims (1)
上に半導体層をエピタキシヤル成長するために用
いるエピタキシヤル成長装置において、 上記半導体基板をベークするためのベーク炉と
、 上記半導体層をエピタキシヤル成長するための
エピタキシヤル成長炉とを有し、 上記ベーク炉及び上記エピタキシヤル成長炉が
互いに分離して設けられていることを特徴とする
エピタキシヤル成長装置。[Claims for Utility Model Registration] In an epitaxial growth apparatus used for epitaxially growing a semiconductor layer on a semiconductor substrate having a semiconductor region with a high impurity concentration, a baking furnace for baking the semiconductor substrate; and an epitaxial growth furnace for epitaxially growing a layer, wherein the baking furnace and the epitaxial growth furnace are provided separately from each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987160687U JPH0165871U (en) | 1987-10-20 | 1987-10-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987160687U JPH0165871U (en) | 1987-10-20 | 1987-10-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0165871U true JPH0165871U (en) | 1989-04-27 |
Family
ID=31442972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987160687U Pending JPH0165871U (en) | 1987-10-20 | 1987-10-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0165871U (en) |
-
1987
- 1987-10-20 JP JP1987160687U patent/JPH0165871U/ja active Pending
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