JPS6418156U - - Google Patents
Info
- Publication number
- JPS6418156U JPS6418156U JP11136987U JP11136987U JPS6418156U JP S6418156 U JPS6418156 U JP S6418156U JP 11136987 U JP11136987 U JP 11136987U JP 11136987 U JP11136987 U JP 11136987U JP S6418156 U JPS6418156 U JP S6418156U
- Authority
- JP
- Japan
- Prior art keywords
- boat
- group compound
- group
- tip
- rear end
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims description 4
- 125000006850 spacer group Chemical group 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 239000011148 porous material Substances 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図は本考案の一実施例に係るＧａＡｓ単結
晶製造用ボートの平面図、第２図及び第３図はそ
れぞれ第１図の―線矢視断面図及び―線
矢視断面図、第４図は従来技術の問題点を示す説
明図である。
図中、１はボート、２は先端部、４は後端部、
５はスペーサである。
FIG. 1 is a plan view of a boat for producing GaAs single crystals according to an embodiment of the present invention, and FIGS. FIG. 4 is an explanatory diagram showing the problems of the prior art. In the figure, 1 is a boat, 2 is a tip, 4 is a rear end,
5 is a spacer.
Claims (1)
より―族化合物半導体単結晶を製造するため
の石英製ボートにおいて、後端部の内面に族元
素蒸気が通過し得る多孔質物質からなるスペーサ
を設けたことを特徴とする―族化合物半導体
単結晶製造用ボート。 A spacer made of a porous material through which group element vapor can pass through the inner surface of the rear end of a quartz boat for manufacturing a - group compound semiconductor single crystal by the boat growth method by placing a seed crystal on the tip of the boat. A boat for producing single crystals of - group compound semiconductors, characterized in that it is equipped with a.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11136987U JPS6418156U (en) | 1987-07-22 | 1987-07-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11136987U JPS6418156U (en) | 1987-07-22 | 1987-07-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6418156U true JPS6418156U (en) | 1989-01-30 |
Family
ID=31349351
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11136987U Pending JPS6418156U (en) | 1987-07-22 | 1987-07-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6418156U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0424073A (en) * | 1990-05-21 | 1992-01-28 | Agency Of Ind Science & Technol | Stitching device |
-
1987
- 1987-07-22 JP JP11136987U patent/JPS6418156U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0424073A (en) * | 1990-05-21 | 1992-01-28 | Agency Of Ind Science & Technol | Stitching device |
| JPH0722626B2 (en) * | 1990-05-21 | 1995-03-15 | 工業技術院長 | Sewing equipment |
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