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GB1498925A - Method of manufacturing semiconductor devices in which a layer of semiconductor material is provided on a substrate apparatus for use in carrying out said method and semiconductor devices thus manufactured - Google Patents

Method of manufacturing semiconductor devices in which a layer of semiconductor material is provided on a substrate apparatus for use in carrying out said method and semiconductor devices thus manufactured

Info

Publication number
GB1498925A
GB1498925A GB4367/76A GB436776A GB1498925A GB 1498925 A GB1498925 A GB 1498925A GB 4367/76 A GB4367/76 A GB 4367/76A GB 436776 A GB436776 A GB 436776A GB 1498925 A GB1498925 A GB 1498925A
Authority
GB
United Kingdom
Prior art keywords
strips
silicon
substrate
support
semiconductor devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4367/76A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR7503926A external-priority patent/FR2299893A1/en
Priority claimed from FR7529556A external-priority patent/FR2325403A2/en
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1498925A publication Critical patent/GB1498925A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)

Abstract

1498925 Semiconductor crystal growth on a substrate PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 4 Feb 1976 [7 Feb 1975 26 Sept 1975] 04367/76 Heading B1 A layer of semiconductor material is grown on a main surface of a solid substrate by solidification of molten semiconductor material on the substrate surface. Suitable apparatus, as shown in Fig. I, comprises a metal chamber 1 containing a body 4 of polycrystalline silicon which forms a support for a liquid mass 5 of molten silicon formed at the upper end 6 of the support 4 by induction coil 7. Disposed on either side of the support 4 are substrates in the form of strips 10 and 11 which are guided by rollers 12 and moved in the direction of arrows F. As a result of the close proximity of the strips 10 and 11, made from a material which can be wetted by silicon e.g. carbon fibre, the silicon of the mass 5 will wet the strips. The liquid silicon retained by the substrate strips 10 and 11 is driven in the direction of arrows F by movement of the strips 10 and 11 and crystallises in the form of layers 17 and 18 as the silicon is moved away from the induction coil heater 7. Silicon layers are thus continuously obtained on the strips and collected outside the chamber 1. Silicon strips can be obtained by this method having a thickness of about 60 Ám, a width of 2 cms and a length of several centimetres. Inclination of the strip-shaped substrates, relative to a vertical direction so that the two strips approach each other, results in the growth of thicker layers.
GB4367/76A 1975-02-07 1976-02-04 Method of manufacturing semiconductor devices in which a layer of semiconductor material is provided on a substrate apparatus for use in carrying out said method and semiconductor devices thus manufactured Expired GB1498925A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7503926A FR2299893A1 (en) 1975-02-07 1975-02-07 Production method for SC devices - involves semiconductor material layer which is applied on main surface of solid state substrate
FR7529556A FR2325403A2 (en) 1975-09-26 1975-09-26 Production method for SC devices - involves semiconductor material layer which is applied on main surface of solid state substrate

Publications (1)

Publication Number Publication Date
GB1498925A true GB1498925A (en) 1978-01-25

Family

ID=26218724

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4367/76A Expired GB1498925A (en) 1975-02-07 1976-02-04 Method of manufacturing semiconductor devices in which a layer of semiconductor material is provided on a substrate apparatus for use in carrying out said method and semiconductor devices thus manufactured

Country Status (5)

Country Link
JP (1) JPS5339741B2 (en)
CA (1) CA1047655A (en)
DE (1) DE2604351C3 (en)
GB (1) GB1498925A (en)
IT (1) IT1055104B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010028103A2 (en) * 2008-09-03 2010-03-11 Evergreen Solar, Inc. String with refractory metal core for string ribbon crystal growth

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2401696A1 (en) * 1977-08-31 1979-03-30 Ugine Kuhlmann METHOD FOR DEPOSITING CRYSTALLINE SILICON IN THIN FILMS ON GRAPHITE SUBSTRATES
CA1169336A (en) * 1980-01-07 1984-06-19 Emanuel M. Sachs String stabilized ribbon growth method and apparatus
DE3231267A1 (en) * 1982-08-23 1984-02-23 Siemens AG, 1000 Berlin und 8000 München METHOD AND DEVICE FOR ASYMMETRICALLY COATING A BAND-SHAPED CARRIER BODY WITH SILICON FOR THE PROCESSING OF SOLAR CELLS
DE3231326A1 (en) * 1982-08-23 1984-02-23 Siemens AG, 1000 Berlin und 8000 München DEVICE FOR PRODUCING LARGE-SCALE, BAND-SHAPED SILICON BODIES FOR SOLAR CELLS
DE3231268A1 (en) * 1982-08-23 1984-02-23 Siemens AG, 1000 Berlin und 8000 München METHOD AND DEVICE FOR ASYMMETRICALLY COATING A BAND-SHAPED CARRIER BODY WITH SILICON FOR THE PROCESSING OF SOLAR CELLS
DE3240245A1 (en) * 1982-10-29 1984-05-03 Siemens AG, 1000 Berlin und 8000 München DEVICE FOR PRODUCING TAPE-SHAPED SILICON BODIES FOR SOLAR CELLS
DE3306135A1 (en) * 1983-02-22 1984-08-23 Siemens AG, 1000 Berlin und 8000 München Method and apparatus for producing polycrystalline, large surface-area silicon crystal bodies for solar cells

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1343740A (en) * 1962-10-12 1963-11-22 Electronique & Physique Process for manufacturing silicon plates and photodiodes obtained from these plates
US3335038A (en) * 1964-03-30 1967-08-08 Ibm Methods of producing single crystals on polycrystalline substrates and devices using same
US3741825A (en) * 1971-07-08 1973-06-26 Rca Corp Method of depositing an epitaxial semiconductor layer from the liquidphase

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010028103A2 (en) * 2008-09-03 2010-03-11 Evergreen Solar, Inc. String with refractory metal core for string ribbon crystal growth
WO2010028103A3 (en) * 2008-09-03 2010-06-03 Evergreen Solar, Inc. String ribbon crystal and method to grow them using strings with refractory metal core

Also Published As

Publication number Publication date
DE2604351A1 (en) 1976-08-19
IT1055104B (en) 1981-12-21
CA1047655A (en) 1979-01-30
JPS51104257A (en) 1976-09-14
DE2604351B2 (en) 1980-12-11
DE2604351C3 (en) 1981-08-13
JPS5339741B2 (en) 1978-10-23

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee