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JPS6450429A - Formation of insulating film - Google Patents

Formation of insulating film

Info

Publication number
JPS6450429A
JPS6450429A JP20752587A JP20752587A JPS6450429A JP S6450429 A JPS6450429 A JP S6450429A JP 20752587 A JP20752587 A JP 20752587A JP 20752587 A JP20752587 A JP 20752587A JP S6450429 A JPS6450429 A JP S6450429A
Authority
JP
Japan
Prior art keywords
cvd method
film
silicon oxide
oxide film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20752587A
Other languages
Japanese (ja)
Other versions
JPH077759B2 (en
Inventor
Shunpei Yamazaki
Kenji Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP62207525A priority Critical patent/JPH077759B2/en
Publication of JPS6450429A publication Critical patent/JPS6450429A/en
Publication of JPH077759B2 publication Critical patent/JPH077759B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To make it possible to form an interlayer insulating film having a flat and smooth surface, by forming a silicon oxide film of a specified thickness on a substrate or performing photochemical vapor phase reaction, and forming a film in the same reaction chamber by a plasma CVD method using a liquid reaction means. CONSTITUTION:As a reacting gas, a silicide gas, e.g., methyl silane (Si(CH3)4, (HzSi(CH3)2), TOES (Si(OC2H5)4) or the like, which is in a liquid state at room temperature or desirably at a temperature of 100 deg.C or less (atmospheric pressure), is used. At first, silicon oxide film 10 is formed on a substrate having irregular shape by an optical CVD method. The surface is uniformly covered along the irregular shape. Thereafter, high frequency power is applied between a mesh electrode 8 on a light transmitting window 5 and a substrate supporting body 2 from a power source 9. At this time, TOES/N2O is used as a reactive gas. Other conditions are made to be the same as in an optical CVD method. A silicon oxide film 11 is formed by a plasma CVD method. Thus, a film is selectively formed in the recess part, and the upper part is made flat.
JP62207525A 1987-08-20 1987-08-20 Insulation film formation method Expired - Fee Related JPH077759B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62207525A JPH077759B2 (en) 1987-08-20 1987-08-20 Insulation film formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62207525A JPH077759B2 (en) 1987-08-20 1987-08-20 Insulation film formation method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP08356231A Division JP3086424B2 (en) 1996-12-24 1996-12-24 Fabrication method of interlayer insulating film

Publications (2)

Publication Number Publication Date
JPS6450429A true JPS6450429A (en) 1989-02-27
JPH077759B2 JPH077759B2 (en) 1995-01-30

Family

ID=16541160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62207525A Expired - Fee Related JPH077759B2 (en) 1987-08-20 1987-08-20 Insulation film formation method

Country Status (1)

Country Link
JP (1) JPH077759B2 (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01185945A (en) * 1988-01-21 1989-07-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPH0298932A (en) * 1988-10-05 1990-04-11 Agency Of Ind Science & Technol Manufacture of silicon oxide film
US5316639A (en) * 1989-06-05 1994-05-31 Sachiko Okazaki Dielectric material used for an ozone generator and a method of forming a film to the dielectric material
WO1997006565A1 (en) * 1995-08-04 1997-02-20 Seiko Epson Corporation Process for preparing thin-film transistor, process for preparing active matrix substrate, and liquid crystal display
KR970052911A (en) * 1995-12-29 1997-07-29 김주용 Planarization method of semiconductor device
WO1999041423A2 (en) * 1998-02-11 1999-08-19 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US6054379A (en) * 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
US6287990B1 (en) 1998-02-11 2001-09-11 Applied Materials, Inc. CVD plasma assisted low dielectric constant films
EP1142136A1 (en) * 1998-12-31 2001-10-10 Nokia Mobile Phones Ltd. Control of gain and power consumption in a power amplifier
US6399489B1 (en) 1999-11-01 2002-06-04 Applied Materials, Inc. Barrier layer deposition using HDP-CVD
US6593655B1 (en) 1998-05-29 2003-07-15 Dow Corning Corporation Method for producing hydrogenated silicon oxycarbide films having low dielectric constant
US6667553B2 (en) 1998-05-29 2003-12-23 Dow Corning Corporation H:SiOC coated substrates
US6784119B2 (en) 1998-02-11 2004-08-31 Applied Materials Inc. Method of decreasing the K value in SIOC layer deposited by chemical vapor deposition
US6926926B2 (en) 2001-09-10 2005-08-09 Applied Materials, Inc. Silicon carbide deposited by high density plasma chemical-vapor deposition with bias
EP1607493A2 (en) 1998-02-11 2005-12-21 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US7227244B2 (en) 1998-02-11 2007-06-05 Applied Materials, Inc. Integrated low k dielectrics and etch stops

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5121753A (en) * 1974-08-16 1976-02-21 Fujitsu Ltd AKUTEIBUBANDOPASUFUIRUTA
JPS5265575A (en) * 1975-11-21 1977-05-31 Us Government Method of protection of surface of plastic material
US4282268A (en) * 1977-05-04 1981-08-04 Rca Corporation Method of depositing a silicon oxide dielectric layer
US4419385A (en) * 1981-09-24 1983-12-06 Hughes Aircraft Company Low temperature process for depositing an oxide dielectric layer on a conductive surface and multilayer structures formed thereby
JPS5982732A (en) * 1982-11-02 1984-05-12 Nec Corp Manufacture for semiconductor device
JPS59194452A (en) * 1983-04-18 1984-11-05 Mitsubishi Electric Corp Manufacture of semiconductor integrated device
JPS61103539A (en) * 1984-10-26 1986-05-22 Applied Material Japan Kk Vapor growth method
JPS61228633A (en) * 1985-04-02 1986-10-11 Hitachi Ltd Formation of thin film
JPS61234531A (en) * 1985-04-11 1986-10-18 Canon Inc Formation of silicon oxide
JPS6254940A (en) * 1985-09-04 1987-03-10 Toshiba Corp Manufacturing semiconductor device
JPS62188375A (en) * 1986-02-14 1987-08-17 Hitachi Ltd Semiconductor integrated circuit device
JPS63246829A (en) * 1986-12-19 1988-10-13 アプライド　マテリアルズインコーポレーテッド Application and on-site multistage planaring process for hot cvd/pecvd reactor and thermochemically evaporation of silicon oxide

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5121753A (en) * 1974-08-16 1976-02-21 Fujitsu Ltd AKUTEIBUBANDOPASUFUIRUTA
JPS5265575A (en) * 1975-11-21 1977-05-31 Us Government Method of protection of surface of plastic material
US4282268A (en) * 1977-05-04 1981-08-04 Rca Corporation Method of depositing a silicon oxide dielectric layer
US4419385A (en) * 1981-09-24 1983-12-06 Hughes Aircraft Company Low temperature process for depositing an oxide dielectric layer on a conductive surface and multilayer structures formed thereby
JPS5982732A (en) * 1982-11-02 1984-05-12 Nec Corp Manufacture for semiconductor device
JPS59194452A (en) * 1983-04-18 1984-11-05 Mitsubishi Electric Corp Manufacture of semiconductor integrated device
JPS61103539A (en) * 1984-10-26 1986-05-22 Applied Material Japan Kk Vapor growth method
JPS61228633A (en) * 1985-04-02 1986-10-11 Hitachi Ltd Formation of thin film
JPS61234531A (en) * 1985-04-11 1986-10-18 Canon Inc Formation of silicon oxide
JPS6254940A (en) * 1985-09-04 1987-03-10 Toshiba Corp Manufacturing semiconductor device
JPS62188375A (en) * 1986-02-14 1987-08-17 Hitachi Ltd Semiconductor integrated circuit device
JPS63246829A (en) * 1986-12-19 1988-10-13 アプライド　マテリアルズインコーポレーテッド Application and on-site multistage planaring process for hot cvd/pecvd reactor and thermochemically evaporation of silicon oxide

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01185945A (en) * 1988-01-21 1989-07-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPH0298932A (en) * 1988-10-05 1990-04-11 Agency Of Ind Science & Technol Manufacture of silicon oxide film
US5316639A (en) * 1989-06-05 1994-05-31 Sachiko Okazaki Dielectric material used for an ozone generator and a method of forming a film to the dielectric material
WO1997006565A1 (en) * 1995-08-04 1997-02-20 Seiko Epson Corporation Process for preparing thin-film transistor, process for preparing active matrix substrate, and liquid crystal display
KR970052911A (en) * 1995-12-29 1997-07-29 김주용 Planarization method of semiconductor device
US6348725B2 (en) 1998-02-11 2002-02-19 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US6562690B1 (en) 1998-02-11 2003-05-13 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US6054379A (en) * 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
US6072227A (en) * 1998-02-11 2000-06-06 Applied Materials, Inc. Low power method of depositing a low k dielectric with organo silane
US6287990B1 (en) 1998-02-11 2001-09-11 Applied Materials, Inc. CVD plasma assisted low dielectric constant films
EP1607493A3 (en) * 1998-02-11 2007-07-04 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US6303523B2 (en) 1998-02-11 2001-10-16 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
WO1999041423A2 (en) * 1998-02-11 1999-08-19 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US7227244B2 (en) 1998-02-11 2007-06-05 Applied Materials, Inc. Integrated low k dielectrics and etch stops
US7023092B2 (en) 1998-02-11 2006-04-04 Applied Materials Inc. Low dielectric constant film produced from silicon compounds comprising silicon-carbon bonds
US6541282B1 (en) 1998-02-11 2003-04-01 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
WO1999041423A3 (en) * 1998-02-11 1999-10-28 Applied Materials Inc Plasma processes for depositing low dielectric constant films
EP1607493A2 (en) 1998-02-11 2005-12-21 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US6784119B2 (en) 1998-02-11 2004-08-31 Applied Materials Inc. Method of decreasing the K value in SIOC layer deposited by chemical vapor deposition
US6667553B2 (en) 1998-05-29 2003-12-23 Dow Corning Corporation H:SiOC coated substrates
US6593655B1 (en) 1998-05-29 2003-07-15 Dow Corning Corporation Method for producing hydrogenated silicon oxycarbide films having low dielectric constant
EP1142136A4 (en) * 1998-12-31 2002-05-08 Nokia Corp Control of gain and power consumption in a power amplifier
EP1142136A1 (en) * 1998-12-31 2001-10-10 Nokia Mobile Phones Ltd. Control of gain and power consumption in a power amplifier
US6713390B2 (en) 1999-11-01 2004-03-30 Applied Materials Inc. Barrier layer deposition using HDP-CVD
US6399489B1 (en) 1999-11-01 2002-06-04 Applied Materials, Inc. Barrier layer deposition using HDP-CVD
US6926926B2 (en) 2001-09-10 2005-08-09 Applied Materials, Inc. Silicon carbide deposited by high density plasma chemical-vapor deposition with bias

Also Published As

Publication number Publication date
JPH077759B2 (en) 1995-01-30

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees