[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JPS55125681A - Manufacture of photovoltaic device - Google Patents

Manufacture of photovoltaic device

Info

Publication number
JPS55125681A
JPS55125681A JP3391979A JP3391979A JPS55125681A JP S55125681 A JPS55125681 A JP S55125681A JP 3391979 A JP3391979 A JP 3391979A JP 3391979 A JP3391979 A JP 3391979A JP S55125681 A JPS55125681 A JP S55125681A
Authority
JP
Japan
Prior art keywords
layer
photovoltaic device
reaction chambers
amorphous silicon
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3391979A
Other languages
Japanese (ja)
Inventor
Yukinori Kuwano
Terutoyo Imai
Masakazu Umetani
Shoichi Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP3391979A priority Critical patent/JPS55125681A/en
Publication of JPS55125681A publication Critical patent/JPS55125681A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE: To enable low temperature treatment and mass production of a photovoltaic device by employing a plasma reaction upon formation of an amorphous silicon layer and a transparent electrode layer on a substrate when forming a generating region by laminating the amorphous silicon layer and the electrode layer.
CONSTITUTION: First to fourth reaction chambers 22a∼22d communicating through partition wall doors 26a∼26c are formed in an apparatus for fabricating a photovoltaic device, and a heater 33 and opposite electrodes 27, 28 connected to a high frequency power supply 31 are arranged in the respective reaction chambers. Thus, the photovoltaic device is formed, glass substrates 7 placed on a belt conveyor 23 are passed through the reaction chambers sequentially, and first transparent SnO2 electrodes 12 having predetermined interval are formed on the substrate 7 by a plasma generated between the electrodes 27 and 28 in the reaction chamber 26a. Then, an amorphous silicon layer 11 having a p-type layer 11a, a undoped layer 11b and an n-type layer 11c is similarly coated on the entire surface thereof in the reaction chamber 26b, and passed through the reaction chambers 22c and 22d to grow similarly a second aluminum electrode 13 and an SiO2 protective film 50 thereon.
COPYRIGHT: (C)1980,JPO&Japio
JP3391979A 1979-03-22 1979-03-22 Manufacture of photovoltaic device Pending JPS55125681A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3391979A JPS55125681A (en) 1979-03-22 1979-03-22 Manufacture of photovoltaic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3391979A JPS55125681A (en) 1979-03-22 1979-03-22 Manufacture of photovoltaic device

Publications (1)

Publication Number Publication Date
JPS55125681A true JPS55125681A (en) 1980-09-27

Family

ID=12399918

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3391979A Pending JPS55125681A (en) 1979-03-22 1979-03-22 Manufacture of photovoltaic device

Country Status (1)

Country Link
JP (1) JPS55125681A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56125882A (en) * 1980-03-07 1981-10-02 Sumitomo Electric Ind Ltd Manufacture of silicon solar cell
JPS58155773A (en) * 1982-03-11 1983-09-16 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS58174570A (en) * 1982-03-29 1983-10-13 エナージー・コンバーション・デバイセス・インコーポレーテッド Glow discharge deposition device containing non-horizontally placed cathode
JPS59182578A (en) * 1983-03-31 1984-10-17 Sanyo Electric Co Ltd Manufacture of photovoltaic device
US4492605A (en) * 1982-03-19 1985-01-08 Matsushita Electric Industrial Co., Ltd. Method of making photovoltaic device
JPS60110176A (en) * 1983-11-21 1985-06-15 Agency Of Ind Science & Technol Apparatus for manufacturing solar battery
US4542711A (en) * 1981-03-16 1985-09-24 Sovonics Solar Systems Continuous system for depositing amorphous semiconductor material
US4920917A (en) * 1987-03-18 1990-05-01 Teijin Limited Reactor for depositing a layer on a moving substrate
EP0534416A2 (en) 1991-09-24 1993-03-31 Canon Kabushiki Kaisha Solar cell
US5352300A (en) * 1991-09-26 1994-10-04 Canon Kabushiki Kaisha Solar cell
WO2004023527A2 (en) * 2002-09-05 2004-03-18 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
US7091120B2 (en) 2003-08-04 2006-08-15 Nanosys, Inc. System and process for producing nanowire composites and electronic substrates therefrom
CN100466297C (en) * 2002-09-05 2009-03-04 奈米系统股份有限公司 Nanostructures,nano coompositon and photovolaitic device

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56125882A (en) * 1980-03-07 1981-10-02 Sumitomo Electric Ind Ltd Manufacture of silicon solar cell
JPH0258790B2 (en) * 1980-03-07 1990-12-10 Sumitomo Electric Industries
US4542711A (en) * 1981-03-16 1985-09-24 Sovonics Solar Systems Continuous system for depositing amorphous semiconductor material
JPS58155773A (en) * 1982-03-11 1983-09-16 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPH0432551B2 (en) * 1982-03-11 1992-05-29
US4492605A (en) * 1982-03-19 1985-01-08 Matsushita Electric Industrial Co., Ltd. Method of making photovoltaic device
JPS58174570A (en) * 1982-03-29 1983-10-13 エナージー・コンバーション・デバイセス・インコーポレーテッド Glow discharge deposition device containing non-horizontally placed cathode
JPH0468390B2 (en) * 1982-03-29 1992-11-02 Enaajii Konbaajon Debaisesu Inc
JPS59182578A (en) * 1983-03-31 1984-10-17 Sanyo Electric Co Ltd Manufacture of photovoltaic device
JPS60110176A (en) * 1983-11-21 1985-06-15 Agency Of Ind Science & Technol Apparatus for manufacturing solar battery
JPH055188B2 (en) * 1983-11-21 1993-01-21 Kogyo Gijutsuin
US4920917A (en) * 1987-03-18 1990-05-01 Teijin Limited Reactor for depositing a layer on a moving substrate
EP0534416A2 (en) 1991-09-24 1993-03-31 Canon Kabushiki Kaisha Solar cell
US5324365A (en) * 1991-09-24 1994-06-28 Canon Kabushiki Kaisha Solar cell
US5420043A (en) * 1991-09-24 1995-05-30 Canon Kabushiki Kaisha Method of manufacturing a solar cell
US5578501A (en) * 1991-09-24 1996-11-26 Canon Kabushiki Kaisha Method of manufacturing a solar cell by formation of a zinc oxide transparent conductive layer
US5352300A (en) * 1991-09-26 1994-10-04 Canon Kabushiki Kaisha Solar cell
US6878871B2 (en) 2002-09-05 2005-04-12 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
WO2004023527A3 (en) * 2002-09-05 2004-07-29 Nanosys Inc Nanostructure and nanocomposite based compositions and photovoltaic devices
WO2004023527A2 (en) * 2002-09-05 2004-03-18 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
US7087832B2 (en) 2002-09-05 2006-08-08 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
US7087833B2 (en) 2002-09-05 2006-08-08 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
CN100466297C (en) * 2002-09-05 2009-03-04 奈米系统股份有限公司 Nanostructures,nano coompositon and photovolaitic device
US7750235B2 (en) 2002-09-05 2010-07-06 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
US7091120B2 (en) 2003-08-04 2006-08-15 Nanosys, Inc. System and process for producing nanowire composites and electronic substrates therefrom
US7468315B2 (en) 2003-08-04 2008-12-23 Nanosys, Inc. System and process for producing nanowire composites and electronic substrates therefrom
US7795125B2 (en) 2003-08-04 2010-09-14 Nanosys, Inc. System and process for producing nanowire composites and electronic substrates therefrom

Similar Documents

Publication Publication Date Title
JPS55125681A (en) Manufacture of photovoltaic device
US4663828A (en) Process and apparatus for continuous production of lightweight arrays of photovoltaic cells
JPS5767938A (en) Production of photoconductive member
JPS6342115A (en) Manufacture of film
JPS57186321A (en) Producing method for amorphous silicon film
JPS5419662A (en) Forming method of plasma cvd film
JPS5771126A (en) Semiamorhous semiconductor
JPS55121685A (en) Manufacture of photovoltaic device
JPS5358490A (en) Forming method for film
JPS5324277A (en) Semiconductor devic e and its production
JPS56169116A (en) Manufacture of amorphous silicon film
JPS5767009A (en) Formation of film
JPS5713738A (en) Vapor-phase growing apparatus
JPS5785221A (en) Manufacture of amorphous semiconductor thin film
JPS57113214A (en) Manufacture of amorphous semiconductor film
JPS5778135A (en) Semiconductor device and manufacture thereof
JPS55121650A (en) Cvd device
JPH0429217B2 (en)
JPS5789217A (en) Manufacturing device of semiconductor
JPH0719748B2 (en) Film forming equipment
JPS5671931A (en) Film formation
JPS57202723A (en) Semiconductor manufacturing device
JPS6411323A (en) Semiconductor manufacturing device
JPS5749221A (en) Plasma gas phase method
JPS5350969A (en) Manufacture of plasma display panel