JPS5683025A - Formation of single crystal semiconductor film - Google Patents
Formation of single crystal semiconductor filmInfo
- Publication number
- JPS5683025A JPS5683025A JP15992279A JP15992279A JPS5683025A JP S5683025 A JPS5683025 A JP S5683025A JP 15992279 A JP15992279 A JP 15992279A JP 15992279 A JP15992279 A JP 15992279A JP S5683025 A JPS5683025 A JP S5683025A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- reactive gas
- epitaxial film
- formation
- semiconductor film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To enable formation of the thin epitaxial film with an excellent controllability by a method wherein Si or Ge reactive gas is maintained in a decompressed condition, it is activated or subject to a plasma using the inductive energy and then a chemical reaction is acted upon it. CONSTITUTION:The Si reactive gas, such as silane, dichlorosilane and the like, or Ge reactive gas, such as germanium hydride, germanium silicide and the like, is introduced in the tubular oven 7 wherein the substrate 10 to be processed is arranged in a decompressed condition (for instance, 0.01-100 Torr is suitable), and the Si or Ge epitaxial film is formed on the substrate by applying a high frequency energy. As a result, an excellent crystallizing property of the epitaxial film is obtained and the single crystal film as thin as 0.01-1mum can be formed with an excellent controllability.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15992279A JPS5683025A (en) | 1979-12-10 | 1979-12-10 | Formation of single crystal semiconductor film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15992279A JPS5683025A (en) | 1979-12-10 | 1979-12-10 | Formation of single crystal semiconductor film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5683025A true JPS5683025A (en) | 1981-07-07 |
Family
ID=15704080
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15992279A Pending JPS5683025A (en) | 1979-12-10 | 1979-12-10 | Formation of single crystal semiconductor film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5683025A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60143625A (en) * | 1983-12-30 | 1985-07-29 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS61283113A (en) * | 1985-06-10 | 1986-12-13 | Sanyo Electric Co Ltd | Epitaxial growth method |
-
1979
- 1979-12-10 JP JP15992279A patent/JPS5683025A/en active Pending
Non-Patent Citations (2)
Title |
---|
JAPAN.J.APPL PHYS=1979 * |
SOLID STATE ELECTRON=1968 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60143625A (en) * | 1983-12-30 | 1985-07-29 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH0475650B2 (en) * | 1983-12-30 | 1992-12-01 | Fujitsu Ltd | |
JPS61283113A (en) * | 1985-06-10 | 1986-12-13 | Sanyo Electric Co Ltd | Epitaxial growth method |
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