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JPS5547381A - Plasma etching method - Google Patents

Plasma etching method

Info

Publication number
JPS5547381A
JPS5547381A JP12024178A JP12024178A JPS5547381A JP S5547381 A JPS5547381 A JP S5547381A JP 12024178 A JP12024178 A JP 12024178A JP 12024178 A JP12024178 A JP 12024178A JP S5547381 A JPS5547381 A JP S5547381A
Authority
JP
Japan
Prior art keywords
contg
high molecular
etching
molded material
material made
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12024178A
Other languages
Japanese (ja)
Other versions
JPS5727934B2 (en
Inventor
Chuichi Takada
Ryoji Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12024178A priority Critical patent/JPS5547381A/en
Publication of JPS5547381A publication Critical patent/JPS5547381A/en
Publication of JPS5727934B2 publication Critical patent/JPS5727934B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To manufacture a semiconductor having high etching selectivity and high preciseness, either by arranging a molded material made of F-contg. high molecular cpd. in a reaction vessel, or by arranging a Si substrate holder made of the moled material at the same time with the introduction of O2 and N2 into the reaction vessel in order to produce plasma.
CONSTITUTION: A holder 6 composed of a molded material made of a F-contg. high molecular cpd., e.g., TFE, is arranged in a reaction tube 3. The tube 3 is evacuated through an exhaust opening 2, and is charged with etching gas, e.g., O2, N2, and the vacuum is adjusted to about 1 Torr. A high frequency power, e.g., 14MHz, 100W in output, is applied to a coil 4 to produce plasma, so that portions to be etched of the surfaces of a Si substrates 5 set on the holder 6 are reacted with the activated gas so as to cause etching. This method makes it possible to control etching rate by adjusting the surface area of the molded material made of F-contg. high molecular cpd.
COPYRIGHT: (C)1980,JPO&Japio
JP12024178A 1978-09-29 1978-09-29 Plasma etching method Granted JPS5547381A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12024178A JPS5547381A (en) 1978-09-29 1978-09-29 Plasma etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12024178A JPS5547381A (en) 1978-09-29 1978-09-29 Plasma etching method

Publications (2)

Publication Number Publication Date
JPS5547381A true JPS5547381A (en) 1980-04-03
JPS5727934B2 JPS5727934B2 (en) 1982-06-14

Family

ID=14781328

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12024178A Granted JPS5547381A (en) 1978-09-29 1978-09-29 Plasma etching method

Country Status (1)

Country Link
JP (1) JPS5547381A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56158873A (en) * 1980-05-14 1981-12-07 Hitachi Ltd Dry etching method
JPS6243132A (en) * 1985-08-20 1987-02-25 Sharp Corp Plasma treatment method
US4748050A (en) * 1985-08-09 1988-05-31 Daicel Chemical Industries, Ltd. Process for preparing thin film having high light transmittance
US5545290A (en) * 1987-07-09 1996-08-13 Texas Instruments Incorporated Etching method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56158873A (en) * 1980-05-14 1981-12-07 Hitachi Ltd Dry etching method
JPS6352118B2 (en) * 1980-05-14 1988-10-18 Hitachi Ltd
US4748050A (en) * 1985-08-09 1988-05-31 Daicel Chemical Industries, Ltd. Process for preparing thin film having high light transmittance
JPS6243132A (en) * 1985-08-20 1987-02-25 Sharp Corp Plasma treatment method
US5545290A (en) * 1987-07-09 1996-08-13 Texas Instruments Incorporated Etching method

Also Published As

Publication number Publication date
JPS5727934B2 (en) 1982-06-14

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