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JPS6431336A - Ion source - Google Patents

Ion source

Info

Publication number
JPS6431336A
JPS6431336A JP62187344A JP18734487A JPS6431336A JP S6431336 A JPS6431336 A JP S6431336A JP 62187344 A JP62187344 A JP 62187344A JP 18734487 A JP18734487 A JP 18734487A JP S6431336 A JPS6431336 A JP S6431336A
Authority
JP
Japan
Prior art keywords
microwave
wave guide
plasma
generating chamber
guiding window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62187344A
Other languages
Japanese (ja)
Inventor
Shigeto Matsuoka
Kenichi Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP62187344A priority Critical patent/JPS6431336A/en
Publication of JPS6431336A publication Critical patent/JPS6431336A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electron Sources, Ion Sources (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To extract ions continuously and stably for a long time regardless of an object material by forming plasma via the electron cycrotron resonance in the mirror magnetic field and protecting a microwave guiding window from the fouling by plasma. CONSTITUTION:A plasma generating chamber 11 has the shape and size to act as a microwave resonance cavity, and microwaves are guided via a microwave wave guide 7, a vacuum wave guide 10, and a microwave guiding window 6. The mirror magnetic field is formed in the generating chamber 11 to minimize the magnetic flux density by an electromagnet 8 arranged around the generating chamber 11. The vacuum wave guide 10 is arranged in the rectangular direction to the magnetic flux direction formed by the electromagnet 8 and has at least a bent section. The microwave guiding window connected to the vacuum wave guide 10 is thereby protected from the fouling by plasma, and ions are continuously extracted for a long time.
JP62187344A 1987-07-27 1987-07-27 Ion source Pending JPS6431336A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62187344A JPS6431336A (en) 1987-07-27 1987-07-27 Ion source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62187344A JPS6431336A (en) 1987-07-27 1987-07-27 Ion source

Publications (1)

Publication Number Publication Date
JPS6431336A true JPS6431336A (en) 1989-02-01

Family

ID=16204355

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62187344A Pending JPS6431336A (en) 1987-07-27 1987-07-27 Ion source

Country Status (1)

Country Link
JP (1) JPS6431336A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06310464A (en) * 1993-04-27 1994-11-04 Nec Corp Neutron beam etching device
JPH06325710A (en) * 1993-05-14 1994-11-25 Hitachi Ltd Microwave ion source and ion implanting device
JP2001160368A (en) * 1999-12-01 2001-06-12 Sumitomo Eaton Noba Kk Ion source

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54158294A (en) * 1978-06-05 1979-12-13 Hitachi Ltd Mass analyzer of neutral sputter particles
JPS6187869A (en) * 1984-10-05 1986-05-06 Hitachi Ltd Sputter device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54158294A (en) * 1978-06-05 1979-12-13 Hitachi Ltd Mass analyzer of neutral sputter particles
JPS6187869A (en) * 1984-10-05 1986-05-06 Hitachi Ltd Sputter device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06310464A (en) * 1993-04-27 1994-11-04 Nec Corp Neutron beam etching device
JPH06325710A (en) * 1993-05-14 1994-11-25 Hitachi Ltd Microwave ion source and ion implanting device
JP2001160368A (en) * 1999-12-01 2001-06-12 Sumitomo Eaton Noba Kk Ion source

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