JPS6431457A - Manufacture of thin film transistor - Google Patents
Manufacture of thin film transistorInfo
- Publication number
- JPS6431457A JPS6431457A JP62188409A JP18840987A JPS6431457A JP S6431457 A JPS6431457 A JP S6431457A JP 62188409 A JP62188409 A JP 62188409A JP 18840987 A JP18840987 A JP 18840987A JP S6431457 A JPS6431457 A JP S6431457A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- semiconductor
- metal film
- light shielding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To simplify steps and to reduce a manufacturing cost by simultaneously forming first and second electrodes on a light transmissible substrate, laminating an insulating film and a semiconductor film thereon to form a semiconductor, then forming and patterning a metal film, and removing the metal film of the second electrode. CONSTITUTION:A transparent conductive film 2 is formed on a glass substrate 1, and a metal film is further formed thereon. With a mask it is photoetched to form a gate first electrode 3 and a pixel second electrode 2. Then, a gate insulating film 4 and a semiconductor film 5 are sequentially deposited, the semiconductor film remains only on the electrode 3 to form a semiconductor 11. In this case, the electrode 2 is exposed. Thereafter, a metal film 7 is formed, patterned, and the metal film of the electrode 2 is removed, a protective film 8 is then formed, a light shielding film 9 is formed, so patterned as to leave the light shielding film only on the semiconductor 3 to form a light shielding part 16.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62188409A JPS6431457A (en) | 1987-07-28 | 1987-07-28 | Manufacture of thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62188409A JPS6431457A (en) | 1987-07-28 | 1987-07-28 | Manufacture of thin film transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6431457A true JPS6431457A (en) | 1989-02-01 |
Family
ID=16223147
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62188409A Pending JPS6431457A (en) | 1987-07-28 | 1987-07-28 | Manufacture of thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6431457A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5728592A (en) * | 1992-10-09 | 1998-03-17 | Fujitsu Ltd. | Method for fabricating a thin film transistor matrix device |
| JP2008129314A (en) * | 2006-11-21 | 2008-06-05 | Hitachi Displays Ltd | Image display device and manufacturing method thereof |
| US7932963B2 (en) | 2002-03-28 | 2011-04-26 | Sharp Kabushiki Kaisha | Substrate for liquid crystal display device, liquid crystal display device provided with the same, and manufacturing method of the same |
-
1987
- 1987-07-28 JP JP62188409A patent/JPS6431457A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5728592A (en) * | 1992-10-09 | 1998-03-17 | Fujitsu Ltd. | Method for fabricating a thin film transistor matrix device |
| US5994173A (en) * | 1992-10-09 | 1999-11-30 | Fujitsu Limited | Thin film transistor matrix device and method for fabricating the same |
| US7932963B2 (en) | 2002-03-28 | 2011-04-26 | Sharp Kabushiki Kaisha | Substrate for liquid crystal display device, liquid crystal display device provided with the same, and manufacturing method of the same |
| JP2008129314A (en) * | 2006-11-21 | 2008-06-05 | Hitachi Displays Ltd | Image display device and manufacturing method thereof |
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