KR970010106B1 - El element and its manufacturing method - Google Patents
El element and its manufacturing method Download PDFInfo
- Publication number
- KR970010106B1 KR970010106B1 KR89008767A KR890008767A KR970010106B1 KR 970010106 B1 KR970010106 B1 KR 970010106B1 KR 89008767 A KR89008767 A KR 89008767A KR 890008767 A KR890008767 A KR 890008767A KR 970010106 B1 KR970010106 B1 KR 970010106B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- insulation layer
- electrode
- amorphous silicon
- conducting film
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/20—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
The full color type EL element is produced as the following steps. (a) On the glass substrate(11), gate electrode(12) is formed and the gate insulation layer(13) is formed with silicon nitride on top of it. (b) The amorphous silicon layers(14) are formed on the gate insulation layer(13) and between the amorphous silicon layers(14), the clear conducting film(15) for pixel electrode, and the drain electrode contacts electrically to a side of clear conducting film(15) by forming the source electrode(17) and the drain electrode(16) on the both side walls of amorphous silicon layer(14). (c) On the clear conducting film(15), each of the red filter layer(18), the green filter layer(19), and the blue filter layer(20) are layed and formed and the protective film(21) is formed on top of it with silicon nitride and the first insulation layer(22), the radiation layer(23), the second insulation layer(24) and the rear electrode(25) are formed in that order.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR89008767A KR970010106B1 (en) | 1989-06-24 | 1989-06-24 | El element and its manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR89008767A KR970010106B1 (en) | 1989-06-24 | 1989-06-24 | El element and its manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910002305A KR910002305A (en) | 1991-01-31 |
KR970010106B1 true KR970010106B1 (en) | 1997-06-21 |
Family
ID=19287432
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR89008767A KR970010106B1 (en) | 1989-06-24 | 1989-06-24 | El element and its manufacturing method |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970010106B1 (en) |
-
1989
- 1989-06-24 KR KR89008767A patent/KR970010106B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR910002305A (en) | 1991-01-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20070918 Year of fee payment: 11 |
|
LAPS | Lapse due to unpaid annual fee |