JPS57103358A - Manufacture of amorphous silicon mosfet - Google Patents
Manufacture of amorphous silicon mosfetInfo
- Publication number
- JPS57103358A JPS57103358A JP17977480A JP17977480A JPS57103358A JP S57103358 A JPS57103358 A JP S57103358A JP 17977480 A JP17977480 A JP 17977480A JP 17977480 A JP17977480 A JP 17977480A JP S57103358 A JPS57103358 A JP S57103358A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous
- si3n4
- type
- masking
- ohmic contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 230000000873 masking effect Effects 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To form an FET having good characteristics by the less steps of masking by laminating amorphous film ohmic contact amorphous film becoming an operation region on the substrate, selectively anodic-oxidizing the amorphous film to form a gate insulating film. CONSTITUTION:Amorphous Si (i-type a-Si) 41, N type a-Si 42 and Si3N4 43 using as operation regions are sequentially formed by glow discharge and laminated, for example, on a quartz substrate 40. Then, the Si3N4 43 on the channel region is then removed by photoetching, is then anodic-oxidized, for example, in aqueous HCl solution until it becomes i-type a-Si 41, thereby forming an SiO2 44. Then, the Si3N4 43 is removed, electrode and wiring metal 45 are deposited on the overall surface, a metallic layer 45 is photoetched to complete the FET structure. Thus, an amorphous SiFET having good ohmic contact and accurate dimension can be formed with only the two steps of masking.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17977480A JPS57103358A (en) | 1980-12-18 | 1980-12-18 | Manufacture of amorphous silicon mosfet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17977480A JPS57103358A (en) | 1980-12-18 | 1980-12-18 | Manufacture of amorphous silicon mosfet |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57103358A true JPS57103358A (en) | 1982-06-26 |
Family
ID=16071646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17977480A Pending JPS57103358A (en) | 1980-12-18 | 1980-12-18 | Manufacture of amorphous silicon mosfet |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57103358A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59177967A (en) * | 1983-03-28 | 1984-10-08 | Komatsu Ltd | Thin-film transistor and manufacture thereof |
| JPS61164267A (en) * | 1985-01-17 | 1986-07-24 | Nec Corp | Manufacture of thin film transistor |
| JPH07273348A (en) * | 1994-09-27 | 1995-10-20 | Seiko Epson Corp | Complementary thin film transistor circuit |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5493966A (en) * | 1978-01-07 | 1979-07-25 | Toshiba Corp | Production of 3-5 group compound semiconductor device |
-
1980
- 1980-12-18 JP JP17977480A patent/JPS57103358A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5493966A (en) * | 1978-01-07 | 1979-07-25 | Toshiba Corp | Production of 3-5 group compound semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59177967A (en) * | 1983-03-28 | 1984-10-08 | Komatsu Ltd | Thin-film transistor and manufacture thereof |
| JPS61164267A (en) * | 1985-01-17 | 1986-07-24 | Nec Corp | Manufacture of thin film transistor |
| JPH07273348A (en) * | 1994-09-27 | 1995-10-20 | Seiko Epson Corp | Complementary thin film transistor circuit |
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