JPS5730382A - Manufacture of solid state image pickup device - Google Patents
Manufacture of solid state image pickup deviceInfo
- Publication number
- JPS5730382A JPS5730382A JP10490880A JP10490880A JPS5730382A JP S5730382 A JPS5730382 A JP S5730382A JP 10490880 A JP10490880 A JP 10490880A JP 10490880 A JP10490880 A JP 10490880A JP S5730382 A JPS5730382 A JP S5730382A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- solid state
- photodetecting layer
- state image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000007787 solid Substances 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
PURPOSE:To prevent the damage of a solid state image pick element and to improve the mass production and the manufacturing yield of the element by forming a photodetecting layer on the overall surface of a substrate formed with the predetermined electrode and removing the photodetecting layer except on the image part. CONSTITUTION:Aluminum film conductor wire 32 is formed via an insulating film partly removed on a silicon element 31 formed with picture elements and drive unit. Then, an Mo film 36 is deposited on the entire surface, and an image part having the first electrode 16 isolated at every unit and a nonimage part retained with the Mo film on the overall surfce are simultaneously formed by a photolithographic method in the step (b). After a photodetecting layer 38 is then deposited on the overall surface, a resists film 40 is formed only on the image part in the step (c), the photodetecting layer of the nonimage part is removed with the film 40 as a mask, and the Mo film 36 is removed in the step (d). Then, the film 40 is removed, the layer 38 is heat treated, and a transparent electrode (ITO) 39 is covered in the step (e).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55104908A JPS6053474B2 (en) | 1980-07-29 | 1980-07-29 | Manufacturing method of solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55104908A JPS6053474B2 (en) | 1980-07-29 | 1980-07-29 | Manufacturing method of solid-state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5730382A true JPS5730382A (en) | 1982-02-18 |
| JPS6053474B2 JPS6053474B2 (en) | 1985-11-26 |
Family
ID=14393213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55104908A Expired JPS6053474B2 (en) | 1980-07-29 | 1980-07-29 | Manufacturing method of solid-state imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6053474B2 (en) |
-
1980
- 1980-07-29 JP JP55104908A patent/JPS6053474B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6053474B2 (en) | 1985-11-26 |
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