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JPS6419715A - Growth method for semiconductor thin-film - Google Patents

Growth method for semiconductor thin-film

Info

Publication number
JPS6419715A
JPS6419715A JP17474687A JP17474687A JPS6419715A JP S6419715 A JPS6419715 A JP S6419715A JP 17474687 A JP17474687 A JP 17474687A JP 17474687 A JP17474687 A JP 17474687A JP S6419715 A JPS6419715 A JP S6419715A
Authority
JP
Japan
Prior art keywords
substrate
gallium arsenide
epitaxial layer
film
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17474687A
Other languages
Japanese (ja)
Inventor
Chiharu Nozaki
Shigeya Narizuka
Yoshihiro Kokubu
Shigeru Yasuami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP17474687A priority Critical patent/JPS6419715A/en
Publication of JPS6419715A publication Critical patent/JPS6419715A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To decrease plane defects generated from the interface and introduced into an epitaxial layer, and to obtain an excellent semiconductor epitaxial layer by specifying impurity concentration in a semiconductor as a substrate. CONSTITUTION:Oxygen concentration in silicon is brought to 1X10<14>cm<-3> or less because oxygen contained in a 100 face silicon substrate 1 precipitates to the surface and causes plane defects in the substrate 1. Phosphorus is diffused to the surface at 1050 deg.C, and a layer 2 is formed into the substrate 1. The substrate 1 is baked at 950 deg.C for thirty min in an arsine atmosphere. The temperature of the substrate is lowered to 450 deg.C and the temperature is stabilized and a gallium arsenide buffer layer 3 is grown in 100-200Angstrom . A gallium arsenide epitaxial layer 4 is grown onto the gallium arsenide buffer layer 3 at 750 deg.C, thus acquiring an excellent gallium arsenide thin-film having superior surface homology and few plane defects.
JP17474687A 1987-07-15 1987-07-15 Growth method for semiconductor thin-film Pending JPS6419715A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17474687A JPS6419715A (en) 1987-07-15 1987-07-15 Growth method for semiconductor thin-film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17474687A JPS6419715A (en) 1987-07-15 1987-07-15 Growth method for semiconductor thin-film

Publications (1)

Publication Number Publication Date
JPS6419715A true JPS6419715A (en) 1989-01-23

Family

ID=15983957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17474687A Pending JPS6419715A (en) 1987-07-15 1987-07-15 Growth method for semiconductor thin-film

Country Status (1)

Country Link
JP (1) JPS6419715A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013125833A (en) * 2011-12-14 2013-06-24 Toyota Motor Corp Iii-v compound semiconductor manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013125833A (en) * 2011-12-14 2013-06-24 Toyota Motor Corp Iii-v compound semiconductor manufacturing method

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