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JPS57188827A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57188827A
JPS57188827A JP7321381A JP7321381A JPS57188827A JP S57188827 A JPS57188827 A JP S57188827A JP 7321381 A JP7321381 A JP 7321381A JP 7321381 A JP7321381 A JP 7321381A JP S57188827 A JPS57188827 A JP S57188827A
Authority
JP
Japan
Prior art keywords
annealing
defects
device region
annealing process
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7321381A
Other languages
Japanese (ja)
Inventor
Katsu Kanamori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7321381A priority Critical patent/JPS57188827A/en
Publication of JPS57188827A publication Critical patent/JPS57188827A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To remove noxious impurities from a device region by annealing a silicon substrate through a Czochralski method while the annealing is divided into four processes. CONSTITUTION:The manufacture consists of the first annealing process at 1,200 deg.C or higher, the second annealing process between 950 deg.C and 1,200 deg.C, the third annealing process at 800 deg.C or lower and the fourth annealing process at 850 deg.C or higher. Oxygen diffuses to the outside and oxygen depositing nuclei shrink in the first process, the concentration of surface oxygen lowers and the generation of defects in the surface device region is reduced because a temperature drops in the second process, and the growth of the depositing nuclei is promoted because a sufficient number of defects are generated in a wafer in the third and fourth processes. Accordingly, a remarkable effect is displayed in the reduction of the defects of the surface device region.
JP7321381A 1981-05-15 1981-05-15 Manufacture of semiconductor device Pending JPS57188827A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7321381A JPS57188827A (en) 1981-05-15 1981-05-15 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7321381A JPS57188827A (en) 1981-05-15 1981-05-15 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57188827A true JPS57188827A (en) 1982-11-19

Family

ID=13511650

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7321381A Pending JPS57188827A (en) 1981-05-15 1981-05-15 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57188827A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6184075A (en) * 1984-09-18 1986-04-28 イギリス国 Photovoltaic solar cell
JPH02224249A (en) * 1988-11-29 1990-09-06 Nec Corp Manufacture of silicon substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6184075A (en) * 1984-09-18 1986-04-28 イギリス国 Photovoltaic solar cell
JPH02224249A (en) * 1988-11-29 1990-09-06 Nec Corp Manufacture of silicon substrate

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