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JPS5740940A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5740940A
JPS5740940A JP11664880A JP11664880A JPS5740940A JP S5740940 A JPS5740940 A JP S5740940A JP 11664880 A JP11664880 A JP 11664880A JP 11664880 A JP11664880 A JP 11664880A JP S5740940 A JPS5740940 A JP S5740940A
Authority
JP
Japan
Prior art keywords
semiconductor device
epitaxial
layer
manufacturing yield
carbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11664880A
Other languages
Japanese (ja)
Other versions
JPS6230692B2 (en
Inventor
Yoshiyuki Shibamata
Masamichi Yoshida
Yunosuke Kawabe
Yutaka Tabata
Tsunenori Yamauchi
Atsuo Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11664880A priority Critical patent/JPS5740940A/en
Publication of JPS5740940A publication Critical patent/JPS5740940A/en
Publication of JPS6230692B2 publication Critical patent/JPS6230692B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To improve a manufacturing yield, by adding carbon having a predetermined concentration or more to a semiconductor substrate used for a semiconductor device. CONSTITUTION:In making ICs or LSIs, a growth process for an epitaxial Si layer, thermal oxidization process for the surface of the epitaxial Si layer, diffusion process and the like are performed by using an Si substrate having a carbon concentration of 0.8X10<17>cm<-3> or more. This method prevents the occurrence of dislocation which may accompany the thermal treatment and a manufacturing yield will be improved and stabilized by demarcating 0.8X10<17> as its boundary.
JP11664880A 1980-08-25 1980-08-25 Semiconductor device Granted JPS5740940A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11664880A JPS5740940A (en) 1980-08-25 1980-08-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11664880A JPS5740940A (en) 1980-08-25 1980-08-25 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5740940A true JPS5740940A (en) 1982-03-06
JPS6230692B2 JPS6230692B2 (en) 1987-07-03

Family

ID=14692421

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11664880A Granted JPS5740940A (en) 1980-08-25 1980-08-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5740940A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5935488A (en) * 1982-08-24 1984-02-27 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS63111380A (en) * 1987-02-06 1988-05-16 Nippon Boorubarubu Kk Ball valve
JPS63111379A (en) * 1986-10-25 1988-05-16 Nippon Boorubarubu Kk Ball valve
US5710967A (en) * 1996-07-12 1998-01-20 Ricoh Company, Ltd. Apparatus which indicates to a user the proper placement of pages to be scanned
US6028264A (en) * 1982-08-24 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of carbon
US6180991B1 (en) 1982-12-23 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of phosphorous
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6346716B1 (en) 1982-12-23 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material having particular oxygen concentration and semiconductor device comprising the same
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
USRE38727E1 (en) 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS=1979 *

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5935488A (en) * 1982-08-24 1984-02-27 Semiconductor Energy Lab Co Ltd Semiconductor device
US6028264A (en) * 1982-08-24 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of carbon
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
USRE38727E1 (en) 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US6180991B1 (en) 1982-12-23 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of phosphorous
US6346716B1 (en) 1982-12-23 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material having particular oxygen concentration and semiconductor device comprising the same
JPS63111379A (en) * 1986-10-25 1988-05-16 Nippon Boorubarubu Kk Ball valve
JPS63111380A (en) * 1987-02-06 1988-05-16 Nippon Boorubarubu Kk Ball valve
US5710967A (en) * 1996-07-12 1998-01-20 Ricoh Company, Ltd. Apparatus which indicates to a user the proper placement of pages to be scanned

Also Published As

Publication number Publication date
JPS6230692B2 (en) 1987-07-03

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