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JPS5315773A - Mis type semiconductor device and its production - Google Patents

Mis type semiconductor device and its production

Info

Publication number
JPS5315773A
JPS5315773A JP8910976A JP8910976A JPS5315773A JP S5315773 A JPS5315773 A JP S5315773A JP 8910976 A JP8910976 A JP 8910976A JP 8910976 A JP8910976 A JP 8910976A JP S5315773 A JPS5315773 A JP S5315773A
Authority
JP
Japan
Prior art keywords
semiconductor device
production
type semiconductor
mis type
mis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8910976A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8910976A priority Critical patent/JPS5315773A/en
Publication of JPS5315773A publication Critical patent/JPS5315773A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843Source or drain regions of field-effect devices
    • H01L29/0847Source or drain regions of field-effect devices of field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE: To obtain a MIS semiconductor device of a small size and high breakdown voltage by burying and providing N+ type sources and drains in wafer bulk and removing the surface effect of variation factors for threshold voltage.
COPYRIGHT: (C)1978,JPO&Japio
JP8910976A 1976-07-28 1976-07-28 Mis type semiconductor device and its production Pending JPS5315773A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8910976A JPS5315773A (en) 1976-07-28 1976-07-28 Mis type semiconductor device and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8910976A JPS5315773A (en) 1976-07-28 1976-07-28 Mis type semiconductor device and its production

Publications (1)

Publication Number Publication Date
JPS5315773A true JPS5315773A (en) 1978-02-14

Family

ID=13961713

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8910976A Pending JPS5315773A (en) 1976-07-28 1976-07-28 Mis type semiconductor device and its production

Country Status (1)

Country Link
JP (1) JPS5315773A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5530873A (en) * 1978-08-28 1980-03-04 Fujitsu Ltd High withstand field-effect transistor of mis type
JPS5533069A (en) * 1978-08-30 1980-03-08 Fujitsu Ltd Semiconductor device
JPS56115568A (en) * 1980-02-19 1981-09-10 Toshiba Corp Manufacture of semiconductor device
JPS58131773A (en) * 1982-02-01 1983-08-05 Hitachi Ltd Semiconductor device and its manufacture
JPS60146293A (en) * 1984-01-11 1985-08-01 沖電気工業株式会社 Light emitting diode driving system
JPS6442993A (en) * 1987-08-08 1989-02-15 Sanyo Electric Co Liquid crystal television equipment
JPH02267971A (en) * 1989-04-07 1990-11-01 Nec Corp Mos transistor and its manufacture
JP2002543593A (en) * 1999-04-22 2002-12-17 アクレオ アーベー High temperature available SiC field effect transistor, use of said transistor and method of manufacturing same

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5530873A (en) * 1978-08-28 1980-03-04 Fujitsu Ltd High withstand field-effect transistor of mis type
JPS6314502B2 (en) * 1978-08-28 1988-03-31 Fujitsu Ltd
JPS5533069A (en) * 1978-08-30 1980-03-08 Fujitsu Ltd Semiconductor device
JPS6314503B2 (en) * 1978-08-30 1988-03-31 Fujitsu Ltd
JPS56115568A (en) * 1980-02-19 1981-09-10 Toshiba Corp Manufacture of semiconductor device
JPS58131773A (en) * 1982-02-01 1983-08-05 Hitachi Ltd Semiconductor device and its manufacture
JPH05870B2 (en) * 1982-02-01 1993-01-06 Hitachi Ltd
JPS60146293A (en) * 1984-01-11 1985-08-01 沖電気工業株式会社 Light emitting diode driving system
JPH0473799B2 (en) * 1984-01-11 1992-11-24
JPS6442993A (en) * 1987-08-08 1989-02-15 Sanyo Electric Co Liquid crystal television equipment
JPH02267971A (en) * 1989-04-07 1990-11-01 Nec Corp Mos transistor and its manufacture
JP2002543593A (en) * 1999-04-22 2002-12-17 アクレオ アーベー High temperature available SiC field effect transistor, use of said transistor and method of manufacturing same

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