JPS5315773A - Mis type semiconductor device and its production - Google Patents
Mis type semiconductor device and its productionInfo
- Publication number
- JPS5315773A JPS5315773A JP8910976A JP8910976A JPS5315773A JP S5315773 A JPS5315773 A JP S5315773A JP 8910976 A JP8910976 A JP 8910976A JP 8910976 A JP8910976 A JP 8910976A JP S5315773 A JPS5315773 A JP S5315773A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- production
- type semiconductor
- mis type
- mis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Abstract
PURPOSE: To obtain a MIS semiconductor device of a small size and high breakdown voltage by burying and providing N+ type sources and drains in wafer bulk and removing the surface effect of variation factors for threshold voltage.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8910976A JPS5315773A (en) | 1976-07-28 | 1976-07-28 | Mis type semiconductor device and its production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8910976A JPS5315773A (en) | 1976-07-28 | 1976-07-28 | Mis type semiconductor device and its production |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5315773A true JPS5315773A (en) | 1978-02-14 |
Family
ID=13961713
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8910976A Pending JPS5315773A (en) | 1976-07-28 | 1976-07-28 | Mis type semiconductor device and its production |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5315773A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5530873A (en) * | 1978-08-28 | 1980-03-04 | Fujitsu Ltd | High withstand field-effect transistor of mis type |
JPS5533069A (en) * | 1978-08-30 | 1980-03-08 | Fujitsu Ltd | Semiconductor device |
JPS56115568A (en) * | 1980-02-19 | 1981-09-10 | Toshiba Corp | Manufacture of semiconductor device |
JPS58131773A (en) * | 1982-02-01 | 1983-08-05 | Hitachi Ltd | Semiconductor device and its manufacture |
JPS60146293A (en) * | 1984-01-11 | 1985-08-01 | 沖電気工業株式会社 | Light emitting diode driving system |
JPS6442993A (en) * | 1987-08-08 | 1989-02-15 | Sanyo Electric Co | Liquid crystal television equipment |
JPH02267971A (en) * | 1989-04-07 | 1990-11-01 | Nec Corp | Mos transistor and its manufacture |
JP2002543593A (en) * | 1999-04-22 | 2002-12-17 | アクレオ アーベー | High temperature available SiC field effect transistor, use of said transistor and method of manufacturing same |
-
1976
- 1976-07-28 JP JP8910976A patent/JPS5315773A/en active Pending
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5530873A (en) * | 1978-08-28 | 1980-03-04 | Fujitsu Ltd | High withstand field-effect transistor of mis type |
JPS6314502B2 (en) * | 1978-08-28 | 1988-03-31 | Fujitsu Ltd | |
JPS5533069A (en) * | 1978-08-30 | 1980-03-08 | Fujitsu Ltd | Semiconductor device |
JPS6314503B2 (en) * | 1978-08-30 | 1988-03-31 | Fujitsu Ltd | |
JPS56115568A (en) * | 1980-02-19 | 1981-09-10 | Toshiba Corp | Manufacture of semiconductor device |
JPS58131773A (en) * | 1982-02-01 | 1983-08-05 | Hitachi Ltd | Semiconductor device and its manufacture |
JPH05870B2 (en) * | 1982-02-01 | 1993-01-06 | Hitachi Ltd | |
JPS60146293A (en) * | 1984-01-11 | 1985-08-01 | 沖電気工業株式会社 | Light emitting diode driving system |
JPH0473799B2 (en) * | 1984-01-11 | 1992-11-24 | ||
JPS6442993A (en) * | 1987-08-08 | 1989-02-15 | Sanyo Electric Co | Liquid crystal television equipment |
JPH02267971A (en) * | 1989-04-07 | 1990-11-01 | Nec Corp | Mos transistor and its manufacture |
JP2002543593A (en) * | 1999-04-22 | 2002-12-17 | アクレオ アーベー | High temperature available SiC field effect transistor, use of said transistor and method of manufacturing same |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS51127682A (en) | Manufacturing process of semiconductor device | |
JPS5315773A (en) | Mis type semiconductor device and its production | |
JPS5247383A (en) | Semiconductor device | |
JPS52113684A (en) | Semiconductor device | |
JPS51112187A (en) | Processing method of semiconductor equipment | |
JPS546480A (en) | Semiconductor device | |
JPS5315772A (en) | Mis semiconductor device and its production | |
JPS5346288A (en) | Mis type semiconductor device | |
JPS5339880A (en) | Field effect type semiconductor device and its production | |
JPS5220769A (en) | Longitudinal semi-conductor unit | |
JPS52117582A (en) | Mos type semiconductor device | |
JPS531471A (en) | Manufacture for semiconductor device | |
JPS52153383A (en) | Preparation of semiconductor device | |
JPS526086A (en) | Production method of semiconductor device | |
JPS5412274A (en) | Electrostatic induction field effect transistor | |
JPS545618A (en) | Semiconductor device | |
JPS5321582A (en) | Mos type semiconductor device | |
JPS53129980A (en) | Production of mos semiconductor device | |
JPS51117581A (en) | Manufacturing method of mos type semiconductor equipment | |
JPS5325371A (en) | Mos type semiconductor device | |
JPS5342569A (en) | Production of junction type field effect semiconductor device | |
JPS536581A (en) | Insulated gate type field effect semiconductor device | |
JPS52147083A (en) | Semiconductor devices and integrated circuit using the same | |
JPS5285482A (en) | Insulated gate type mis semiconductor device and its production | |
JPS53112678A (en) | Manufacture for semiconductor device |