JPS5315772A - Mis semiconductor device and its production - Google Patents
Mis semiconductor device and its productionInfo
- Publication number
- JPS5315772A JPS5315772A JP8910876A JP8910876A JPS5315772A JP S5315772 A JPS5315772 A JP S5315772A JP 8910876 A JP8910876 A JP 8910876A JP 8910876 A JP8910876 A JP 8910876A JP S5315772 A JPS5315772 A JP S5315772A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- production
- mis semiconductor
- mis
- obviated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: The variations in Vth are obviated and a MIS semiconductor device of a high breakdown voltage and a small element size is obtained by forming channel regions in the bulk of a Si wafer.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8910876A JPS5315772A (en) | 1976-07-28 | 1976-07-28 | Mis semiconductor device and its production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8910876A JPS5315772A (en) | 1976-07-28 | 1976-07-28 | Mis semiconductor device and its production |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5315772A true JPS5315772A (en) | 1978-02-14 |
Family
ID=13961685
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8910876A Pending JPS5315772A (en) | 1976-07-28 | 1976-07-28 | Mis semiconductor device and its production |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5315772A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56172880U (en) * | 1980-05-23 | 1981-12-21 | ||
JPS57115090U (en) * | 1981-01-09 | 1982-07-16 | ||
JPH02267971A (en) * | 1989-04-07 | 1990-11-01 | Nec Corp | Mos transistor and its manufacture |
US5482880A (en) * | 1991-08-30 | 1996-01-09 | Texas Instruments Incorporated | Non-volatile memory cell and fabrication method |
US8534452B2 (en) | 2009-02-26 | 2013-09-17 | J-Power Entech, Inc. | Equipment for discharging a fixed amount of a particulate body |
-
1976
- 1976-07-28 JP JP8910876A patent/JPS5315772A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56172880U (en) * | 1980-05-23 | 1981-12-21 | ||
JPS57115090U (en) * | 1981-01-09 | 1982-07-16 | ||
JPH02267971A (en) * | 1989-04-07 | 1990-11-01 | Nec Corp | Mos transistor and its manufacture |
US5482880A (en) * | 1991-08-30 | 1996-01-09 | Texas Instruments Incorporated | Non-volatile memory cell and fabrication method |
US8534452B2 (en) | 2009-02-26 | 2013-09-17 | J-Power Entech, Inc. | Equipment for discharging a fixed amount of a particulate body |
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