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JPS5315772A - Mis semiconductor device and its production - Google Patents

Mis semiconductor device and its production

Info

Publication number
JPS5315772A
JPS5315772A JP8910876A JP8910876A JPS5315772A JP S5315772 A JPS5315772 A JP S5315772A JP 8910876 A JP8910876 A JP 8910876A JP 8910876 A JP8910876 A JP 8910876A JP S5315772 A JPS5315772 A JP S5315772A
Authority
JP
Japan
Prior art keywords
semiconductor device
production
mis semiconductor
mis
obviated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8910876A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Yukio Tanigaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8910876A priority Critical patent/JPS5315772A/en
Publication of JPS5315772A publication Critical patent/JPS5315772A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: The variations in Vth are obviated and a MIS semiconductor device of a high breakdown voltage and a small element size is obtained by forming channel regions in the bulk of a Si wafer.
COPYRIGHT: (C)1978,JPO&Japio
JP8910876A 1976-07-28 1976-07-28 Mis semiconductor device and its production Pending JPS5315772A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8910876A JPS5315772A (en) 1976-07-28 1976-07-28 Mis semiconductor device and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8910876A JPS5315772A (en) 1976-07-28 1976-07-28 Mis semiconductor device and its production

Publications (1)

Publication Number Publication Date
JPS5315772A true JPS5315772A (en) 1978-02-14

Family

ID=13961685

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8910876A Pending JPS5315772A (en) 1976-07-28 1976-07-28 Mis semiconductor device and its production

Country Status (1)

Country Link
JP (1) JPS5315772A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56172880U (en) * 1980-05-23 1981-12-21
JPS57115090U (en) * 1981-01-09 1982-07-16
JPH02267971A (en) * 1989-04-07 1990-11-01 Nec Corp Mos transistor and its manufacture
US5482880A (en) * 1991-08-30 1996-01-09 Texas Instruments Incorporated Non-volatile memory cell and fabrication method
US8534452B2 (en) 2009-02-26 2013-09-17 J-Power Entech, Inc. Equipment for discharging a fixed amount of a particulate body

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56172880U (en) * 1980-05-23 1981-12-21
JPS57115090U (en) * 1981-01-09 1982-07-16
JPH02267971A (en) * 1989-04-07 1990-11-01 Nec Corp Mos transistor and its manufacture
US5482880A (en) * 1991-08-30 1996-01-09 Texas Instruments Incorporated Non-volatile memory cell and fabrication method
US8534452B2 (en) 2009-02-26 2013-09-17 J-Power Entech, Inc. Equipment for discharging a fixed amount of a particulate body

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