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JPS5339880A - Field effect type semiconductor device and its production - Google Patents

Field effect type semiconductor device and its production

Info

Publication number
JPS5339880A
JPS5339880A JP11369376A JP11369376A JPS5339880A JP S5339880 A JPS5339880 A JP S5339880A JP 11369376 A JP11369376 A JP 11369376A JP 11369376 A JP11369376 A JP 11369376A JP S5339880 A JPS5339880 A JP S5339880A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
type semiconductor
field effect
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11369376A
Other languages
Japanese (ja)
Inventor
Yasuo Taira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11369376A priority Critical patent/JPS5339880A/en
Publication of JPS5339880A publication Critical patent/JPS5339880A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To obtain a FET having high mutual conductances and breakdown voltage by encircling the n layer on a P type substrate with an n+ layer and P+ isolating layer and forming a p layer adjoining to the N+ layer in the n layer.
COPYRIGHT: (C)1978,JPO&Japio
JP11369376A 1976-09-24 1976-09-24 Field effect type semiconductor device and its production Pending JPS5339880A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11369376A JPS5339880A (en) 1976-09-24 1976-09-24 Field effect type semiconductor device and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11369376A JPS5339880A (en) 1976-09-24 1976-09-24 Field effect type semiconductor device and its production

Publications (1)

Publication Number Publication Date
JPS5339880A true JPS5339880A (en) 1978-04-12

Family

ID=14618779

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11369376A Pending JPS5339880A (en) 1976-09-24 1976-09-24 Field effect type semiconductor device and its production

Country Status (1)

Country Link
JP (1) JPS5339880A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54146583A (en) * 1978-05-09 1979-11-15 Mitsubishi Electric Corp Semiconductor device
JPS55105379A (en) * 1979-02-07 1980-08-12 Matsushita Electric Ind Co Ltd Field-effect transistor
JPS61168536A (en) * 1985-01-21 1986-07-30 Agency Of Ind Science & Technol Manufacturing method of acicular iron oxyhydroxide
US5141879A (en) * 1989-08-28 1992-08-25 Herbert Goronkin Method of fabricating a FET having a high trap concentration interface layer

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54146583A (en) * 1978-05-09 1979-11-15 Mitsubishi Electric Corp Semiconductor device
JPS55105379A (en) * 1979-02-07 1980-08-12 Matsushita Electric Ind Co Ltd Field-effect transistor
JPS61168536A (en) * 1985-01-21 1986-07-30 Agency Of Ind Science & Technol Manufacturing method of acicular iron oxyhydroxide
JPH033612B2 (en) * 1985-01-21 1991-01-21 Kogyo Gijutsu Incho
US5141879A (en) * 1989-08-28 1992-08-25 Herbert Goronkin Method of fabricating a FET having a high trap concentration interface layer

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