JPS53146579A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS53146579A JPS53146579A JP6114077A JP6114077A JPS53146579A JP S53146579 A JPS53146579 A JP S53146579A JP 6114077 A JP6114077 A JP 6114077A JP 6114077 A JP6114077 A JP 6114077A JP S53146579 A JPS53146579 A JP S53146579A
- Authority
- JP
- Japan
- Prior art keywords
- sio
- manufacture
- semiconductor device
- semiconductor substrate
- glass layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To obtain an insulating isolation semiconductor substrate featuring the reduced out-diffusion by covering the exposed area of the glass layer with SiO2 layer when the semiconductor substrate is adhered to the support substrate via the glass layer composed of B B2O3-SiO2 and P2O5-SiO2 group which contain the element to be turned to the impurity when diffused to the substrate.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6114077A JPS53146579A (en) | 1977-05-27 | 1977-05-27 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6114077A JPS53146579A (en) | 1977-05-27 | 1977-05-27 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS53146579A true JPS53146579A (en) | 1978-12-20 |
Family
ID=13162480
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6114077A Pending JPS53146579A (en) | 1977-05-27 | 1977-05-27 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53146579A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6334949A (en) * | 1986-07-29 | 1988-02-15 | Toshiba Corp | Semiconductor device |
-
1977
- 1977-05-27 JP JP6114077A patent/JPS53146579A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6334949A (en) * | 1986-07-29 | 1988-02-15 | Toshiba Corp | Semiconductor device |
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