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JPS5395571A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5395571A
JPS5395571A JP966277A JP966277A JPS5395571A JP S5395571 A JPS5395571 A JP S5395571A JP 966277 A JP966277 A JP 966277A JP 966277 A JP966277 A JP 966277A JP S5395571 A JPS5395571 A JP S5395571A
Authority
JP
Japan
Prior art keywords
semiconductor device
layer
manufacture
limiting
high performance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP966277A
Other languages
Japanese (ja)
Other versions
JPS5915388B2 (en
Inventor
Juichi Shimada
Yasuhiro Shiraki
Keisuke Kobayashi
Yoshifumi Katayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP966277A priority Critical patent/JPS5915388B2/en
Publication of JPS5395571A publication Critical patent/JPS5395571A/en
Publication of JPS5915388B2 publication Critical patent/JPS5915388B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE: To manufacture the semiconductor device of high performance, by limiting the impurity filled layer almost only to the monoatomic layer.
COPYRIGHT: (C)1978,JPO&Japio
JP966277A 1977-02-02 1977-02-02 semiconductor equipment Expired JPS5915388B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP966277A JPS5915388B2 (en) 1977-02-02 1977-02-02 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP966277A JPS5915388B2 (en) 1977-02-02 1977-02-02 semiconductor equipment

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP2902782A Division JPS57164573A (en) 1982-02-26 1982-02-26 Semiconductor device
JP11273183A Division JPS5910278A (en) 1983-06-24 1983-06-24 Semiconductor device
JP8091487A Division JPS62271475A (en) 1987-04-03 1987-04-03 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5395571A true JPS5395571A (en) 1978-08-21
JPS5915388B2 JPS5915388B2 (en) 1984-04-09

Family

ID=11726416

Family Applications (1)

Application Number Title Priority Date Filing Date
JP966277A Expired JPS5915388B2 (en) 1977-02-02 1977-02-02 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS5915388B2 (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57164573A (en) * 1982-02-26 1982-10-09 Hitachi Ltd Semiconductor device
JPS58102516A (en) * 1981-12-14 1983-06-18 Seiko Epson Corp Semiconductor device
JPS5910278A (en) * 1983-06-24 1984-01-19 Hitachi Ltd Semiconductor device
JPS59171172A (en) * 1984-02-01 1984-09-27 Hitachi Ltd Semiconductor device
JPS59188175A (en) * 1984-02-01 1984-10-25 Hitachi Ltd Semiconductor device
JPS607121A (en) * 1983-06-24 1985-01-14 Nec Corp Structure of super lattice
JPS61116875A (en) * 1985-11-13 1986-06-04 Hitachi Ltd Semiconductor device
JPS61216316A (en) * 1985-02-22 1986-09-26 Fujitsu Ltd Manufacture of semiconductor device
JPS61224482A (en) * 1985-03-29 1986-10-06 Fujitsu Ltd Semiconductor light emitting device
JPS6294923A (en) * 1985-10-22 1987-05-01 Nec Corp Method of impurity doping for semiconductor material
JPS62271475A (en) * 1987-04-03 1987-11-25 Hitachi Ltd Semiconductor device
WO2001093339A1 (en) * 2000-05-31 2001-12-06 Matsushita Electric Industrial Co. Ltd. Misfet
US6780698B2 (en) 2001-12-26 2004-08-24 Hitachi, Ltd. Semiconductor device and its production method

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58102516A (en) * 1981-12-14 1983-06-18 Seiko Epson Corp Semiconductor device
JPH0330309B2 (en) * 1982-02-26 1991-04-26
JPS57164573A (en) * 1982-02-26 1982-10-09 Hitachi Ltd Semiconductor device
JPH0315334B2 (en) * 1983-06-24 1991-02-28 Nippon Electric Co
JPS5910278A (en) * 1983-06-24 1984-01-19 Hitachi Ltd Semiconductor device
JPS607121A (en) * 1983-06-24 1985-01-14 Nec Corp Structure of super lattice
JPS59171172A (en) * 1984-02-01 1984-09-27 Hitachi Ltd Semiconductor device
JPS59188175A (en) * 1984-02-01 1984-10-25 Hitachi Ltd Semiconductor device
JPS61216316A (en) * 1985-02-22 1986-09-26 Fujitsu Ltd Manufacture of semiconductor device
JPH0318733B2 (en) * 1985-02-22 1991-03-13 Fujitsu Ltd
JPS61224482A (en) * 1985-03-29 1986-10-06 Fujitsu Ltd Semiconductor light emitting device
JPS6294923A (en) * 1985-10-22 1987-05-01 Nec Corp Method of impurity doping for semiconductor material
JPH0428149B2 (en) * 1985-11-13 1992-05-13 Hitachi Ltd
JPS61116875A (en) * 1985-11-13 1986-06-04 Hitachi Ltd Semiconductor device
JPS62271475A (en) * 1987-04-03 1987-11-25 Hitachi Ltd Semiconductor device
WO2001093339A1 (en) * 2000-05-31 2001-12-06 Matsushita Electric Industrial Co. Ltd. Misfet
US6617653B1 (en) 2000-05-31 2003-09-09 Matsushita Electric Industrial Co., Ltd. Misfet
US6864507B2 (en) 2000-05-31 2005-03-08 Matsushita Electric Industrial Co., Ltd. Misfet
CN100345306C (en) * 2000-05-31 2007-10-24 松下电器产业株式会社 Misfet
US6780698B2 (en) 2001-12-26 2004-08-24 Hitachi, Ltd. Semiconductor device and its production method

Also Published As

Publication number Publication date
JPS5915388B2 (en) 1984-04-09

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