JPS5812336A - Vacuum chuck - Google Patents
Vacuum chuckInfo
- Publication number
- JPS5812336A JPS5812336A JP11139981A JP11139981A JPS5812336A JP S5812336 A JPS5812336 A JP S5812336A JP 11139981 A JP11139981 A JP 11139981A JP 11139981 A JP11139981 A JP 11139981A JP S5812336 A JPS5812336 A JP S5812336A
- Authority
- JP
- Japan
- Prior art keywords
- metal mask
- mask substrate
- resist
- chuck
- vacuum chuck
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 abstract description 28
- 229910052751 metal Inorganic materials 0.000 abstract description 28
- 239000011248 coating agent Substances 0.000 abstract description 7
- 238000000576 coating method Methods 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、フォトマスクを製造するために使用されるレ
ジスト塗布装置等のマスクの固定用治具に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a jig for fixing a mask, such as a resist coating device used for manufacturing a photomask.
通常この固定用治具はパキ、−ムチャックと呼ばれてい
る。This fixing jig is usually called paki or muchak.
一般にトランジスター、IC等の半導体装置の製造工程
において半導体つ、−ハの表面に7オトレジスト等の感
光性樹脂を用いて所望の素子パターン形成し、該レジス
ト膜パター7にエツチングレジストとして選択的に蝕刻
する方法が行なわれ、通常この素子パターン形成のため
にフォトマスクが使用されている。Generally, in the manufacturing process of semiconductor devices such as transistors and ICs, a desired element pattern is formed on the surface of the semiconductor using a photosensitive resin such as 7-photoresist, and the resist film pattern 7 is selectively etched as an etching resist. A photomask is usually used to form this element pattern.
フォトマスクの好例としてガラス基板あるいは石英、低
膨張ガラス基板上に蒸着、スパックリンダ法により、金
属の薄膜を形成し鉄金属薄膜に所望のパターンを形成し
たメタルマスクが知られている。この種のメタルマスク
の製造方法は、メタルマスク基板上にムZ−1350等
の7オトレジスト膜を形成し、このフォトレジスト膜に
所望の素子パターyt形成し金属薄膜を選択的に工、チ
ングすることにより完成する。As a good example of a photomask, a metal mask is known in which a thin metal film is formed on a glass substrate, quartz, or low-expansion glass substrate by evaporation or spuck-linda, and a desired pattern is formed on the iron metal thin film. The manufacturing method for this type of metal mask involves forming a photoresist film such as Mu Z-1350 on a metal mask substrate, forming a desired element pattern on this photoresist film, and selectively etching and etching the metal thin film. It is completed by this.
通常フォトレジストをメタルマスク基板上に形成するた
めにレジスト塗布装置が用いられる。A resist coating device is usually used to form a photoresist on a metal mask substrate.
従来より用いられているこの種のレジスト塗布装置t−
嬉1図に示す、すなわち第1図においてモータlのモー
メスピンドル2にパキ、−ム面3とパキ、−ムチャ、り
軸4とが一体化されたパ中。This type of resist coating equipment that has been used in the past
1. In other words, in FIG. 1, a spindle 2 of a motor 1 is integrated with a spindle surface 3 and a spindle 4.
−ムチャックを差し込み固定すると共にパキ、−入面3
に載置されるメタルマスク基板5をバキュームバイブロ
全通して真空吸着保持し得るようにさせ、かつメタルマ
スク基板5の上方にレジストノズル7t−設け、さらに
レジスト飛散を受は止めるカップ8t−バキューム面3
の周囲に設けたものである。-Insert and fix the muchak, and then press the -inlet face 3.
A resist nozzle 7t is provided above the metal mask substrate 5 so that the metal mask substrate 5 placed on the metal mask substrate 5 can be held by vacuum suction through the entire vacuum vibrator, and a cup 8t for preventing resist scattering is provided on the vacuum surface. 3
It is placed around the .
以上の構成によるレジスト塗布装置において、メタルマ
スク基板5Fiバキー−五面3上に載せられ真空吸着に
より固定される。その後、レジストノズル7より滴量の
レジストをメタルマスク基板5上に滴下し、モータ1の
駆動によりチャック軸4t−所定の回転数で回転させ、
レジストラメタルマスク基板5上に塗布するのである。In the resist coating apparatus having the above configuration, the metal mask substrate 5 is placed on the five-face surface 3 and fixed by vacuum suction. Thereafter, a droplet of resist is dropped onto the metal mask substrate 5 from the resist nozzle 7, and the chuck shaft 4t is rotated at a predetermined rotation speed by driving the motor 1.
It is applied onto the registrar metal mask substrate 5.
しかしこの構造によるときは、メタルマスク基板5が正
方形をなしているということにより、メタルマスク基板
5の4隅が回転中に受ける空気の抵抗によ多レジストが
均一に塗布されず、メタマスク基板の中心部より、2倍
程度(通常レジスト膜厚は4000〜6000λ)厚い
レジスト膜が形成されてしまうと言う欠点を有していた
。However, when using this structure, since the metal mask substrate 5 is square, the resist is not applied uniformly due to the air resistance that the four corners of the metal mask substrate 5 receive during rotation, and the resist is not applied uniformly to the metal mask substrate 5. This has the disadvantage that a resist film is formed that is about twice as thick (normally, the resist film thickness is 4000 to 6000λ) than the center part.
このようにレジスト膜厚が大きく変っている場合、該レ
ジスト膜に所望するパターンが精度良く形成されずレジ
ストパターンの寸法が大きくバラライてしまうこととな
る。When the resist film thickness varies greatly in this way, a desired pattern cannot be formed on the resist film with high accuracy, and the dimensions of the resist pattern vary widely.
本発明はバキュームチャックのチャ、り面に(メタル)
マスク基板の表面が同一平面上となるようにチャック面
に(メタル)マスク基板が埋没する凹部を設けたバキュ
ームチャックを提供するものである。The present invention is applied to the cha-face of a vacuum chuck (metal).
A vacuum chuck is provided in which a recessed portion in which a (metal) mask substrate is buried is provided on the chuck surface so that the surfaces of the mask substrates are on the same plane.
以下に本発明の実施例を第2図によって説明する。尚第
1図と同一構成部分には同一番号を付して説明する。第
2図において本発明はチャ、り面3の平面を円形とし、
その中心部にメタルマスク基板5が埋没する凹部9t−
設けたものである。An embodiment of the present invention will be described below with reference to FIG. Components that are the same as those in FIG. 1 will be described with the same reference numerals. In FIG. 2, the present invention has a curved surface 3 having a circular plane,
A recess 9t- in which the metal mask substrate 5 is buried.
It was established.
本発明の構造によればチャック面3とメタルマスク基板
5の表面とが同一平面上に位置し、さらにチャ、り面3
が円形の構造のため、回転中における空気の抵抗を受け
ることなくレジストの塗布が行なえるものである。According to the structure of the present invention, the chuck surface 3 and the surface of the metal mask substrate 5 are located on the same plane.
Because of its circular structure, resist can be applied without being subjected to air resistance during rotation.
本発明によりメタルマスク基板外周部においても従来、
メタルマスク中心部の2倍程度厚くなっていたものが1
〜15倍程度までにおさえることが可能となった。According to the present invention, the outer periphery of the metal mask substrate can also be
The one that was about twice as thick as the center of the metal mask was 1.
It became possible to reduce the amount by about 15 times.
以上述べたようにバキューム面3に凹部9t−設はバキ
ューム面3とメタルマスク基板5の表面を同一平面上に
位置することによりレジスト膜厚を均一とすることが可
能となプ従来の不都合を一挙に解消できるものである。As described above, by providing the recess 9t on the vacuum surface 3, the vacuum surface 3 and the surface of the metal mask substrate 5 are located on the same plane, thereby making it possible to make the resist film thickness uniform. This can be resolved all at once.
第1図(8)は従来のバキュームチャックを用いたレジ
スト塗布装置の断面図であり、第1図(Bは第1図(、
A)の上面図である。第2図(A)は本発明の実施例の
断面図であり、第2図(均は第2図(A)の上面図であ
る。
尚、図において、
1・・・・・−モータ、2・・・・・・モータスピンド
ル、3・・・・・・バキューム面、4・・・・・・バキ
ュームチャック軸、5・・・・・・メタルマスク基板、
6・・・・・・バキュームパイプ、7・・・・・・レジ
ストノズル、8・・・・・・カップ、9・・・・・・凹
部、である。FIG. 1 (8) is a cross-sectional view of a resist coating device using a conventional vacuum chuck, and FIG.
It is a top view of A). FIG. 2(A) is a sectional view of an embodiment of the present invention, and FIG. 2(A) is a top view of FIG. 2(A). 2... Motor spindle, 3... Vacuum surface, 4... Vacuum chuck shaft, 5... Metal mask substrate,
6...Vacuum pipe, 7...Resist nozzle, 8...Cup, 9...Recessed portion.
Claims (1)
に、該マスク基板を置設させるととく凹部が設けられて
いること14I黴とするパキ、−ムチャック・A recess is provided on the chamfer surface of the vacuum chuck on which the mask substrate is placed, especially when the mask substrate is placed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11139981A JPS5812336A (en) | 1981-07-16 | 1981-07-16 | Vacuum chuck |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11139981A JPS5812336A (en) | 1981-07-16 | 1981-07-16 | Vacuum chuck |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5812336A true JPS5812336A (en) | 1983-01-24 |
Family
ID=14560160
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11139981A Pending JPS5812336A (en) | 1981-07-16 | 1981-07-16 | Vacuum chuck |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5812336A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6353925A (en) * | 1986-08-23 | 1988-03-08 | Shinetsu Sekiei Kk | Resist mask coating |
EP0259961A2 (en) * | 1986-08-14 | 1988-03-16 | Millspin Limited | Ion beam dosimetry |
JPH01135023A (en) * | 1987-11-20 | 1989-05-26 | Hitachi Ltd | Elimination of organic matter |
-
1981
- 1981-07-16 JP JP11139981A patent/JPS5812336A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0259961A2 (en) * | 1986-08-14 | 1988-03-16 | Millspin Limited | Ion beam dosimetry |
JPS6353925A (en) * | 1986-08-23 | 1988-03-08 | Shinetsu Sekiei Kk | Resist mask coating |
JPH01135023A (en) * | 1987-11-20 | 1989-05-26 | Hitachi Ltd | Elimination of organic matter |
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