JPS56138922A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56138922A JPS56138922A JP4260480A JP4260480A JPS56138922A JP S56138922 A JPS56138922 A JP S56138922A JP 4260480 A JP4260480 A JP 4260480A JP 4260480 A JP4260480 A JP 4260480A JP S56138922 A JPS56138922 A JP S56138922A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- photo resist
- section
- metal
- unlevelled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 5
- 229910052751 metal Inorganic materials 0.000 abstract 5
- 229920002120 photoresistant polymer Polymers 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000992 sputter etching Methods 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To form an electrode in an excellent reproducibility on the substrate having an unlevelled section by a method wherein an electrode is coated on the entire surface of the photo resist covering the nonflat surface excluding the electrode forming section on a semiconductor substrate, and then a selective removal is performed using an ion milling method. CONSTITUTION:After the photo resist 15 has been provided on the surface of a GaAs substrate 11, excluding the section for forming the wiring electrode 16 of the semicondutor device whereon a gate metal, an SiO2 film covering the gate and electrode metals are provided on both sides, a wiring metal 16 is coated on the whole surface and an unnecessary metal is removed by an ion milling method using the photo resist layer 17 as a mask. As a result, the metal adhered again to the end part of the unlevelled section is removed simultaneously when the photo resist 15 is removed and the electrode having a good external appearance can be formed with an excellent reproducibility.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4260480A JPS56138922A (en) | 1980-04-01 | 1980-04-01 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4260480A JPS56138922A (en) | 1980-04-01 | 1980-04-01 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56138922A true JPS56138922A (en) | 1981-10-29 |
Family
ID=12640641
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4260480A Pending JPS56138922A (en) | 1980-04-01 | 1980-04-01 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56138922A (en) |
-
1980
- 1980-04-01 JP JP4260480A patent/JPS56138922A/en active Pending
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