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JPS5749221A - Plasma gas phase method - Google Patents

Plasma gas phase method

Info

Publication number
JPS5749221A
JPS5749221A JP12438380A JP12438380A JPS5749221A JP S5749221 A JPS5749221 A JP S5749221A JP 12438380 A JP12438380 A JP 12438380A JP 12438380 A JP12438380 A JP 12438380A JP S5749221 A JPS5749221 A JP S5749221A
Authority
JP
Japan
Prior art keywords
tube
furnace
substrates
plasma
boat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12438380A
Other languages
Japanese (ja)
Other versions
JPH0322050B2 (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Original Assignee
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI ENERUGII KENKYUSHO KK, Semiconductor Energy Laboratory Co Ltd filed Critical HANDOUTAI ENERUGII KENKYUSHO KK
Priority to JP12438380A priority Critical patent/JPS5749221A/en
Publication of JPS5749221A publication Critical patent/JPS5749221A/en
Publication of JPH0322050B2 publication Critical patent/JPH0322050B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To obtain a preferable film by cooling the wall surface of a reaction furnace in front of substrates when non-single crystalline films on the substrates by decomposing or reacting silicide or germanium compound in plasma atmosphere, thereby reducing the reactive product adhered on the wall surface. CONSTITUTION:When a plurality of semiconductor substrates 10 are placed on a board 8 and non-single crystalline films, Si, Ge or the like are formed on the surfaces, a quartz reaction tube 5 to be used is composed as below. That is, a resistance radiation type electric furnace 7 is arranged on the periphery of the tube 5 corresponding to the position of the boat 8, double tube made of outer and inner tube 16, 15 is prepared at the tube 5 of the upstream side of the boat 8, enabling water-cooling, and a high frequency induction furnace 6 is arranged as a plasma generation source on the outer perphery of the tube. Thus, the tube 5 is composed in this manner, raw material and carrier gas are flowed from inlets 1-4, are heated in the furnace 7, plasma is generated in the furnace 6, and the gas which does not contribute to the production is exhausted via valve 11, 12 by a pump 13.
JP12438380A 1980-09-08 1980-09-08 Plasma gas phase method Granted JPS5749221A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12438380A JPS5749221A (en) 1980-09-08 1980-09-08 Plasma gas phase method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12438380A JPS5749221A (en) 1980-09-08 1980-09-08 Plasma gas phase method

Publications (2)

Publication Number Publication Date
JPS5749221A true JPS5749221A (en) 1982-03-23
JPH0322050B2 JPH0322050B2 (en) 1991-03-26

Family

ID=14884043

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12438380A Granted JPS5749221A (en) 1980-09-08 1980-09-08 Plasma gas phase method

Country Status (1)

Country Link
JP (1) JPS5749221A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6118125A (en) * 1984-07-04 1986-01-27 Semiconductor Energy Lab Co Ltd Thin film forming apparatus
JPS6118124A (en) * 1984-07-04 1986-01-27 Semiconductor Energy Lab Co Ltd Thin film forming apparatus
JPH07201738A (en) * 1993-12-14 1995-08-04 Applied Materials Inc Pretreatment method for thin-film formation, and formation method for thin film

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53142173A (en) * 1977-05-18 1978-12-11 Kokusai Electric Co Ltd Method of growing reduced pressure gaseous phase

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53142173A (en) * 1977-05-18 1978-12-11 Kokusai Electric Co Ltd Method of growing reduced pressure gaseous phase

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6118125A (en) * 1984-07-04 1986-01-27 Semiconductor Energy Lab Co Ltd Thin film forming apparatus
JPS6118124A (en) * 1984-07-04 1986-01-27 Semiconductor Energy Lab Co Ltd Thin film forming apparatus
JPH07201738A (en) * 1993-12-14 1995-08-04 Applied Materials Inc Pretreatment method for thin-film formation, and formation method for thin film
JPH0793276B2 (en) * 1993-12-14 1995-10-09 アプライド マテリアルズ インコーポレイテッド Thin film forming pretreatment method and thin film forming method

Also Published As

Publication number Publication date
JPH0322050B2 (en) 1991-03-26

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