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FR2114105A5 - Epitaxial radiation heated reactor - including a quartz reaction chamber - Google Patents

Epitaxial radiation heated reactor - including a quartz reaction chamber

Info

Publication number
FR2114105A5
FR2114105A5 FR7041042A FR7041042A FR2114105A5 FR 2114105 A5 FR2114105 A5 FR 2114105A5 FR 7041042 A FR7041042 A FR 7041042A FR 7041042 A FR7041042 A FR 7041042A FR 2114105 A5 FR2114105 A5 FR 2114105A5
Authority
FR
France
Prior art keywords
reaction chamber
quartz reaction
heated reactor
epitaxial
radiation heated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7041042A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Technologies Inc
Original Assignee
Applied Materials Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Technologies Inc filed Critical Applied Materials Technologies Inc
Priority to FR7041042A priority Critical patent/FR2114105A5/en
Application granted granted Critical
Publication of FR2114105A5 publication Critical patent/FR2114105A5/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

In apparatus for vapour depositing epitaxial films on substrates, a gaseous reactant is introduced into a reaction chamber formed from a material, such as quartz, which is transparent and monobstructive to radiant heat energy transmitted at a predetermined short wavelength. A graphite susceptor, which is opaque to and absorbs the radiant heat energy, is positioned within the reaction chamber and supports the substrates to be coated. The susceptor is heated while the walls of the reaction chamber remain cool to preclude deposition of the epitaxial film on the walls.
FR7041042A 1970-11-16 1970-11-16 Epitaxial radiation heated reactor - including a quartz reaction chamber Expired FR2114105A5 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7041042A FR2114105A5 (en) 1970-11-16 1970-11-16 Epitaxial radiation heated reactor - including a quartz reaction chamber

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7041042A FR2114105A5 (en) 1970-11-16 1970-11-16 Epitaxial radiation heated reactor - including a quartz reaction chamber

Publications (1)

Publication Number Publication Date
FR2114105A5 true FR2114105A5 (en) 1972-06-30

Family

ID=9064216

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7041042A Expired FR2114105A5 (en) 1970-11-16 1970-11-16 Epitaxial radiation heated reactor - including a quartz reaction chamber

Country Status (1)

Country Link
FR (1) FR2114105A5 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2359004A1 (en) * 1972-11-29 1974-06-06 Applied Materials Tech METHOD AND DEVICE FOR HEATING A SUBSTRATE FORMED FROM SINGLE CRYSTALLINE MATERIAL
FR2235487A1 (en) * 1973-06-29 1975-01-24 Ibm
EP0092346A1 (en) * 1982-04-09 1983-10-26 Fujitsu Limited Method and apparatus for heating a semiconductor substrate under reduced pressure
FR2548218A1 (en) * 1983-06-29 1985-01-04 Pauleau Yves Process for deposition of thin layers by gas phase chemical reaction employing two different radiations
EP0334432A1 (en) * 1988-03-22 1989-09-27 Laboratoires D'electronique Philips Epitaxy reactor with wall protected against deposits

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2359004A1 (en) * 1972-11-29 1974-06-06 Applied Materials Tech METHOD AND DEVICE FOR HEATING A SUBSTRATE FORMED FROM SINGLE CRYSTALLINE MATERIAL
FR2235487A1 (en) * 1973-06-29 1975-01-24 Ibm
EP0092346A1 (en) * 1982-04-09 1983-10-26 Fujitsu Limited Method and apparatus for heating a semiconductor substrate under reduced pressure
US4517026A (en) * 1982-04-09 1985-05-14 Fujitsu Limited Method of backside heating a semiconductor substrate in an evacuated chamber by directed microwaves for vacuum treating and heating a semiconductor substrate
FR2548218A1 (en) * 1983-06-29 1985-01-04 Pauleau Yves Process for deposition of thin layers by gas phase chemical reaction employing two different radiations
EP0334432A1 (en) * 1988-03-22 1989-09-27 Laboratoires D'electronique Philips Epitaxy reactor with wall protected against deposits
FR2628985A1 (en) * 1988-03-22 1989-09-29 Labo Electronique Physique EPITAXY REACTOR WITH WALL PROTECTED AGAINST DEPOSITS

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