JPS5640331A - High-speed logical operation circuit - Google Patents
High-speed logical operation circuitInfo
- Publication number
- JPS5640331A JPS5640331A JP11648479A JP11648479A JPS5640331A JP S5640331 A JPS5640331 A JP S5640331A JP 11648479 A JP11648479 A JP 11648479A JP 11648479 A JP11648479 A JP 11648479A JP S5640331 A JPS5640331 A JP S5640331A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- fet
- gaasfet
- deltav
- slightly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0952—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using Schottky type FET MESFET
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Logic Circuits (AREA)
Abstract
PURPOSE:To improve the voltage gain between the input and the output practically, by shifting the level of the output signal in the drain electrode of the first GaAsFET by a required quantity and by applying this signal to the gate electrode of the second GaAsFET. CONSTITUTION:When the first GaAsFET starts escaping from the pinch-off state, the voltage of each part is changed. A current is flowed to the first FET, and drain voltage VO1 starts falling slightly, and gate voltage VG2 of the second GaAsFET starts falling. Since the first FET starts operating as a source follower circuit, source voltage VS rises by DELTAV according to rise of gate voltage VG1. Source voltage VS of the second FET falls by DELTAV' also. The current flowed to the first FET is increased to cause drain voltage VD1 to fall from the position of arrow 403 slightly. Voltage VG2 of the second FET falls from the position of arrow 404 slightly also, and voltage VS falls by DELTAV''. By repeating this course, respective voltage values reach a stable point.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11648479A JPS5640331A (en) | 1979-09-11 | 1979-09-11 | High-speed logical operation circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11648479A JPS5640331A (en) | 1979-09-11 | 1979-09-11 | High-speed logical operation circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5640331A true JPS5640331A (en) | 1981-04-16 |
Family
ID=14688245
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11648479A Pending JPS5640331A (en) | 1979-09-11 | 1979-09-11 | High-speed logical operation circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5640331A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57201337A (en) * | 1981-06-03 | 1982-12-09 | Nippon Telegr & Teleph Corp <Ntt> | Logical circuit using schottky junction gate type field effect transistor |
JPS58145237A (en) * | 1982-02-22 | 1983-08-30 | Matsushita Electric Ind Co Ltd | Logical circuit for field effect transistor |
JPS58195322A (en) * | 1982-05-10 | 1983-11-14 | Matsushita Electric Ind Co Ltd | Field effect transistor circuit |
JPS5917724A (en) * | 1982-07-20 | 1984-01-30 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit |
JPS59100626A (en) * | 1982-11-30 | 1984-06-09 | Fujitsu Ltd | Current switching type logical circuit |
JPS60203019A (en) * | 1984-02-08 | 1985-10-14 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Fundamental logic circuit |
JPS61251319A (en) * | 1985-04-30 | 1986-11-08 | Seiko Instr & Electronics Ltd | Semiconductor integrated circuit |
US4644189A (en) * | 1983-09-16 | 1987-02-17 | U.S. Philips Corporation | Decoder circuit for a static random access memory |
JPS63244930A (en) * | 1987-03-13 | 1988-10-12 | グールド・インコーポレイテッド | Intergrated logic circuit |
-
1979
- 1979-09-11 JP JP11648479A patent/JPS5640331A/en active Pending
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57201337A (en) * | 1981-06-03 | 1982-12-09 | Nippon Telegr & Teleph Corp <Ntt> | Logical circuit using schottky junction gate type field effect transistor |
JPH0348695B2 (en) * | 1981-06-03 | 1991-07-25 | Nippon Telegraph & Telephone | |
JPS58145237A (en) * | 1982-02-22 | 1983-08-30 | Matsushita Electric Ind Co Ltd | Logical circuit for field effect transistor |
JPS58195322A (en) * | 1982-05-10 | 1983-11-14 | Matsushita Electric Ind Co Ltd | Field effect transistor circuit |
JPS5917724A (en) * | 1982-07-20 | 1984-01-30 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit |
JPS59100626A (en) * | 1982-11-30 | 1984-06-09 | Fujitsu Ltd | Current switching type logical circuit |
JPH0522410B2 (en) * | 1982-11-30 | 1993-03-29 | Fujitsu Ltd | |
US4644189A (en) * | 1983-09-16 | 1987-02-17 | U.S. Philips Corporation | Decoder circuit for a static random access memory |
JPS60203019A (en) * | 1984-02-08 | 1985-10-14 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Fundamental logic circuit |
JPH0662640U (en) * | 1984-02-08 | 1994-09-02 | エヌ・ベー・フィリップス・フルーイランペンファブリケン | Logic circuit |
JPS61251319A (en) * | 1985-04-30 | 1986-11-08 | Seiko Instr & Electronics Ltd | Semiconductor integrated circuit |
JPS63244930A (en) * | 1987-03-13 | 1988-10-12 | グールド・インコーポレイテッド | Intergrated logic circuit |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5640331A (en) | High-speed logical operation circuit | |
JPS6471324A (en) | Symmetrical amplifier load circuit and amplifier equipped with the load circuit | |
FR2296307A1 (en) | Negative resistance integrated circuit - has two MOS FET's with specified gate connections for switching nide change-over | |
JPS5710534A (en) | High-voltage mos inverter and its driving method | |
JPS5647128A (en) | Switch circuit | |
JPS5483759A (en) | Mos inverter circuit | |
JPS5625373A (en) | Control circuit for power | |
JPS5767319A (en) | Amplifier with variable threshold voltage | |
JPS5586222A (en) | Level shift circuit | |
JPS5723318A (en) | Comparator using programable unijunction transistor | |
JPS5447471A (en) | Electronic circuit | |
JPS5545259A (en) | Transistor output circuit | |
JPS55115730A (en) | Switching circuit | |
JPS5623022A (en) | Schmitt trigger circuit | |
JPS5539413A (en) | Schmitt trigger circuit | |
SU892721A1 (en) | Timer | |
JPS57152711A (en) | Differential single end converting circuit | |
FR2296311A1 (en) | Negative resistance integrated circuit - has two MOS FET's with specified gate connections for switching nide change-over | |
JPS5587470A (en) | Substrate bias circuit of mos integrated circuit | |
JPS5579509A (en) | Amplifier | |
JPS5535543A (en) | Output buffer circuit | |
JPS5719673A (en) | Electric current detector with resistance change-over circuit | |
JPS57181229A (en) | Driving circuit | |
JPS56140721A (en) | Voltage comparator | |
JPS57112134A (en) | Semiconductor circuit |