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JPS5633841A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5633841A
JPS5633841A JP10984879A JP10984879A JPS5633841A JP S5633841 A JPS5633841 A JP S5633841A JP 10984879 A JP10984879 A JP 10984879A JP 10984879 A JP10984879 A JP 10984879A JP S5633841 A JPS5633841 A JP S5633841A
Authority
JP
Japan
Prior art keywords
injected
resist
nitrogen
polysilicon film
passivation film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10984879A
Other languages
Japanese (ja)
Other versions
JPS6227539B2 (en
Inventor
Hisao Hayashi
Yasuo Hayashi
Hisayoshi Yamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP10984879A priority Critical patent/JPS5633841A/en
Publication of JPS5633841A publication Critical patent/JPS5633841A/en
Publication of JPS6227539B2 publication Critical patent/JPS6227539B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Bipolar Transistors (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To facilitate the treatment process of a passivation film by injecting nitrogen ions in the predetermined region of a surface layer including Si provided on a semiconductor substrate wherein the region where the nitrogen ions are not injected is selectively eliminated. CONSTITUTION:A polysilicon film 15 containing oxygen is provided as a passivation film on a silicon substrate 11 and a photo resist 16 is provided on the polysilicon film 15 with a predetermined pattern. A nitrogen ions are injected in the surfaces of the polysilicon film 15 and photo resist 16 to form a layer 17 containing nitrogen on the surfaces. Next, the resist 16 is removed and the part where nitrogen is not injected by the resist 16 is selectively removed by etchants (For example, H2O2: HF:NH4F=6:1:10) to form an aperture 18. In this way, a special mask will be unnecessary at the time of etching and unnecessary etching due to the defect of a mask pattern in case of a mesa type element or the like will be eliminated and the treatment process of the passivation film will be facilitated.
JP10984879A 1979-08-29 1979-08-29 Manufacture of semiconductor device Granted JPS5633841A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10984879A JPS5633841A (en) 1979-08-29 1979-08-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10984879A JPS5633841A (en) 1979-08-29 1979-08-29 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5633841A true JPS5633841A (en) 1981-04-04
JPS6227539B2 JPS6227539B2 (en) 1987-06-15

Family

ID=14520718

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10984879A Granted JPS5633841A (en) 1979-08-29 1979-08-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5633841A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58142529A (en) * 1982-02-18 1983-08-24 Mitsubishi Electric Corp Manufacture of semiconductor element
JPS58147150A (en) * 1982-02-26 1983-09-01 Fujitsu Ltd Manufacture of semiconductor device
KR101524824B1 (en) * 2009-01-21 2015-06-03 삼성전자주식회사 method of forming pattern structure

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53114685A (en) * 1977-03-17 1978-10-06 Toshiba Corp Manufacture for semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53114685A (en) * 1977-03-17 1978-10-06 Toshiba Corp Manufacture for semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58142529A (en) * 1982-02-18 1983-08-24 Mitsubishi Electric Corp Manufacture of semiconductor element
JPS58147150A (en) * 1982-02-26 1983-09-01 Fujitsu Ltd Manufacture of semiconductor device
JPH0371771B2 (en) * 1982-02-26 1991-11-14 Fujitsu Ltd
KR101524824B1 (en) * 2009-01-21 2015-06-03 삼성전자주식회사 method of forming pattern structure

Also Published As

Publication number Publication date
JPS6227539B2 (en) 1987-06-15

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