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JPS5679446A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5679446A
JPS5679446A JP15707179A JP15707179A JPS5679446A JP S5679446 A JPS5679446 A JP S5679446A JP 15707179 A JP15707179 A JP 15707179A JP 15707179 A JP15707179 A JP 15707179A JP S5679446 A JPS5679446 A JP S5679446A
Authority
JP
Japan
Prior art keywords
film
substrate
pattern
mask
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15707179A
Other languages
Japanese (ja)
Inventor
Satoru Maeda
Hiroshi Iwai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP15707179A priority Critical patent/JPS5679446A/en
Publication of JPS5679446A publication Critical patent/JPS5679446A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To obtain specified dimensions eliminating encroaching of an oxide film into an element region by etching an insulator film to remove parts on an element region with a metal mask provided on a specified region of the insulator film when the region is formed on a semiconductor substrate. CONSTITUTION:An SiO2 film 12 is applied on a p type Si substrate 11 and provided with a resist film pattern 13. Wigh this film as a mask, a p type impurity ion is injected through the film 12 to form a p<+> type antiinversion layer 14 on the surface of a substrate 11. Then, an Al film is applied on the entire surface including the pattern 13 to isolate the Al film 15a on the film 12 from the Al film 15b on the pattern 13 and then the pattern 13 is removed with the film 15b thereon. With the film 15a as mask, the exposed film 12 is etched away only leaving a part as a film 16 on the film 14. A gate electrode 19 is provided on the substrate 11 exposed between the films through a gate oxide film 18, and with the electrode 19 as mask, an N<+> type source and drain regions 20 and 21 are diffused into the substrate 11.
JP15707179A 1979-12-04 1979-12-04 Production of semiconductor device Pending JPS5679446A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15707179A JPS5679446A (en) 1979-12-04 1979-12-04 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15707179A JPS5679446A (en) 1979-12-04 1979-12-04 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5679446A true JPS5679446A (en) 1981-06-30

Family

ID=15641592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15707179A Pending JPS5679446A (en) 1979-12-04 1979-12-04 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5679446A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61500046A (en) * 1983-09-30 1986-01-09 ヒュ−ズ・エアクラフト・カンパニ− Method of manufacturing MOSFET devices
US5141884A (en) * 1990-08-18 1992-08-25 Samsung Electronics Co., Ltd. Isolation method of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61500046A (en) * 1983-09-30 1986-01-09 ヒュ−ズ・エアクラフト・カンパニ− Method of manufacturing MOSFET devices
US5141884A (en) * 1990-08-18 1992-08-25 Samsung Electronics Co., Ltd. Isolation method of semiconductor device

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