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JPS5613731A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5613731A
JPS5613731A JP8828179A JP8828179A JPS5613731A JP S5613731 A JPS5613731 A JP S5613731A JP 8828179 A JP8828179 A JP 8828179A JP 8828179 A JP8828179 A JP 8828179A JP S5613731 A JPS5613731 A JP S5613731A
Authority
JP
Japan
Prior art keywords
etched
protective film
mesa
constitution
stages
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8828179A
Other languages
Japanese (ja)
Inventor
Osamu Saito
Naohiro Monma
Hiroshi Kaneko
Takahiro Kawada
Saburo Oikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8828179A priority Critical patent/JPS5613731A/en
Publication of JPS5613731A publication Critical patent/JPS5613731A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To prevent the cutting at stages of a protective film of a mesa upper end by a method wherein the whole surface of the surface of a substrate is etched before forming the protective film for the surface. CONSTITUTION:The whole surface of a wafer to which a mesa is formed is etched by a liquid, whose principal ingredients are nitric acid and fluoric acid, thickness it is etched, an SiO2 protective film 4 is formed, a resist mask is coated, and a window is opened. According to this constitution, since the corners of a mesa upper end portion are previously etched, the SiO2 film is not cut at stages, and the fixed electrode window can be formed.
JP8828179A 1979-07-13 1979-07-13 Manufacture of semiconductor device Pending JPS5613731A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8828179A JPS5613731A (en) 1979-07-13 1979-07-13 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8828179A JPS5613731A (en) 1979-07-13 1979-07-13 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5613731A true JPS5613731A (en) 1981-02-10

Family

ID=13938509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8828179A Pending JPS5613731A (en) 1979-07-13 1979-07-13 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5613731A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114639598A (en) * 2022-05-10 2022-06-17 晶芯成(北京)科技有限公司 Method for manufacturing semiconductor structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114639598A (en) * 2022-05-10 2022-06-17 晶芯成(北京)科技有限公司 Method for manufacturing semiconductor structure

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