[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JPS56100482A - Manufacture of fet - Google Patents

Manufacture of fet

Info

Publication number
JPS56100482A
JPS56100482A JP276780A JP276780A JPS56100482A JP S56100482 A JPS56100482 A JP S56100482A JP 276780 A JP276780 A JP 276780A JP 276780 A JP276780 A JP 276780A JP S56100482 A JPS56100482 A JP S56100482A
Authority
JP
Japan
Prior art keywords
film
layer
resin
thick
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP276780A
Other languages
Japanese (ja)
Inventor
Toshio Sugawa
Takeshi Konuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP276780A priority Critical patent/JPS56100482A/en
Publication of JPS56100482A publication Critical patent/JPS56100482A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain FET having the property of sefe-alignment and fine gate length by selecting the kind and thickness of an insulation film to be used, covering the same with photosensitive resin and then applying etching thereto on the occasion that FET is prepared by photoetching. CONSTITUTION:On an N type GaAs layer which is an active layer made to grow on a semi-insulated GaAs substrate, an Si3N4 film 2 about 500Angstrom thick, an SiO2 film 3 containing phosphorus about 3,000Angstrom thick and an Si3N4 film 4 about 1,000Angstrom thick are laminated and connected thereto. Next, by using photosensitive resin 5 having an opening in a gate-forming region as a mask, plasma etching is applied to the film 4, chemical etching to the film 3 and reactive spatter etching to the film 2 respectively, while the film 3 containing phosphorus is made side-etched. After that, shot-key junction forming metal such as Al is connected to the whole surface, an Al layer 7 is made to be present in the layer 1 exposed, and resin 5 is removed together with an Al layer 7' thereon. Then, photosensitive resin 8 is applied and later is removed together with the resin 8 thereon, whereby a Schottky electrode 7 contained in the resin 8 is obtained.
JP276780A 1980-01-14 1980-01-14 Manufacture of fet Pending JPS56100482A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP276780A JPS56100482A (en) 1980-01-14 1980-01-14 Manufacture of fet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP276780A JPS56100482A (en) 1980-01-14 1980-01-14 Manufacture of fet

Publications (1)

Publication Number Publication Date
JPS56100482A true JPS56100482A (en) 1981-08-12

Family

ID=11538482

Family Applications (1)

Application Number Title Priority Date Filing Date
JP276780A Pending JPS56100482A (en) 1980-01-14 1980-01-14 Manufacture of fet

Country Status (1)

Country Link
JP (1) JPS56100482A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5965484A (en) * 1982-10-05 1984-04-13 Nec Corp Manufactue of semiconductor device
JPS617668A (en) * 1984-06-22 1986-01-14 Fujitsu Ltd Manufacture of semiconductor device
US4583107A (en) * 1983-08-15 1986-04-15 Westinghouse Electric Corp. Castellated gate field effect transistor
JPS6459963A (en) * 1987-08-31 1989-03-07 Nec Corp Manufacture of field-effect transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5396671A (en) * 1977-02-03 1978-08-24 Oki Electric Ind Co Ltd Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5396671A (en) * 1977-02-03 1978-08-24 Oki Electric Ind Co Ltd Manufacture of semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5965484A (en) * 1982-10-05 1984-04-13 Nec Corp Manufactue of semiconductor device
JPH024139B2 (en) * 1982-10-05 1990-01-26 Nippon Electric Co
US4583107A (en) * 1983-08-15 1986-04-15 Westinghouse Electric Corp. Castellated gate field effect transistor
JPS617668A (en) * 1984-06-22 1986-01-14 Fujitsu Ltd Manufacture of semiconductor device
JPS6459963A (en) * 1987-08-31 1989-03-07 Nec Corp Manufacture of field-effect transistor

Similar Documents

Publication Publication Date Title
JPS56100482A (en) Manufacture of fet
JPS5627972A (en) Manufacture of compound semiconductor device
JPS5730376A (en) Manufacture of schottky barrier fet
JPS56155531A (en) Manufacture of semiconductor device
JPS57188884A (en) Formation of recessed minute multilayer gate electrode
JPS5661169A (en) Preparation of compound semiconductor device
JPS6472567A (en) Manufacture of semiconductor device
JPS5627974A (en) Manufacture of compound semiconductor device
JPS57188883A (en) Formation of recess-type micro-multilayer gate electrode
JPS56148824A (en) Formation of electrode
JPS57107040A (en) Manufacture of semiconductor device
JPS5673474A (en) Manufacture of semiconductor device
JPS5613731A (en) Manufacture of semiconductor device
JPS57177563A (en) Junction type filed effect transistor and manufacture thereof
JPS57124443A (en) Forming method for electrode layer
JPS54162484A (en) Manufacture of semiconductor device
JPS5690539A (en) Production of semiconductor device
JPS57155778A (en) Manufacture of schottky barrier gate fet
JPS5739532A (en) Manufacture of compound semiconductor device
JPS5789261A (en) Manufacture of semiconductor device
JPS54142067A (en) Semiconductor device and its manufacture
JPS54143065A (en) Semiconductor device
JPS57188879A (en) Formation of recess-type micro-multilayer gate electrode
JPS5380165A (en) Manufacture of semiconductor
JPS57188882A (en) Formation of recess-type micro-multilayer gate electrode