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JPS56134739A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56134739A
JPS56134739A JP3837780A JP3837780A JPS56134739A JP S56134739 A JPS56134739 A JP S56134739A JP 3837780 A JP3837780 A JP 3837780A JP 3837780 A JP3837780 A JP 3837780A JP S56134739 A JPS56134739 A JP S56134739A
Authority
JP
Japan
Prior art keywords
mon
metal
oxide film
film
fine process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3837780A
Other languages
Japanese (ja)
Inventor
Hidekazu Okabayashi
Kohei Higuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3837780A priority Critical patent/JPS56134739A/en
Publication of JPS56134739A publication Critical patent/JPS56134739A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To apply a fine process by a method wherein a predetermined mask is applied to a nitriding film of Mo or W to selectively separate N and made patterning after being converted to metal. CONSTITUTION:A field oxide film 2 and a gate oxide film 3 are formed on a P type Si substrate to allow MoN4 to be reservoired. When an Si3N4 mask 5 is applied and treated in H2 at 600 deg.C for about five minutes, the N of the MoN is separated to be changed to the metal Mo. Then, only Mo6 is selectively fused in a well-known Mo etching liquid, a gate electroe 4a of MoN is formed. Hereinafter, MOSFET is formed according to a general method. With this construction, the nitriding film of Mo or W can easily be wet-etching and applied the fine process.
JP3837780A 1980-03-26 1980-03-26 Manufacture of semiconductor device Pending JPS56134739A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3837780A JPS56134739A (en) 1980-03-26 1980-03-26 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3837780A JPS56134739A (en) 1980-03-26 1980-03-26 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56134739A true JPS56134739A (en) 1981-10-21

Family

ID=12523584

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3837780A Pending JPS56134739A (en) 1980-03-26 1980-03-26 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56134739A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011119751A (en) * 2005-09-29 2011-06-16 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method thereof
JP2015021175A (en) * 2013-07-19 2015-02-02 大陽日酸株式会社 Film production method of metallic thin film

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011119751A (en) * 2005-09-29 2011-06-16 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method thereof
US10304962B2 (en) 2005-09-29 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US12183832B2 (en) 2005-09-29 2024-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2015021175A (en) * 2013-07-19 2015-02-02 大陽日酸株式会社 Film production method of metallic thin film

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