JPS56134739A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56134739A JPS56134739A JP3837780A JP3837780A JPS56134739A JP S56134739 A JPS56134739 A JP S56134739A JP 3837780 A JP3837780 A JP 3837780A JP 3837780 A JP3837780 A JP 3837780A JP S56134739 A JPS56134739 A JP S56134739A
- Authority
- JP
- Japan
- Prior art keywords
- mon
- metal
- oxide film
- film
- fine process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
Abstract
PURPOSE:To apply a fine process by a method wherein a predetermined mask is applied to a nitriding film of Mo or W to selectively separate N and made patterning after being converted to metal. CONSTITUTION:A field oxide film 2 and a gate oxide film 3 are formed on a P type Si substrate to allow MoN4 to be reservoired. When an Si3N4 mask 5 is applied and treated in H2 at 600 deg.C for about five minutes, the N of the MoN is separated to be changed to the metal Mo. Then, only Mo6 is selectively fused in a well-known Mo etching liquid, a gate electroe 4a of MoN is formed. Hereinafter, MOSFET is formed according to a general method. With this construction, the nitriding film of Mo or W can easily be wet-etching and applied the fine process.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3837780A JPS56134739A (en) | 1980-03-26 | 1980-03-26 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3837780A JPS56134739A (en) | 1980-03-26 | 1980-03-26 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56134739A true JPS56134739A (en) | 1981-10-21 |
Family
ID=12523584
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3837780A Pending JPS56134739A (en) | 1980-03-26 | 1980-03-26 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56134739A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011119751A (en) * | 2005-09-29 | 2011-06-16 | Semiconductor Energy Lab Co Ltd | Semiconductor device and manufacturing method thereof |
JP2015021175A (en) * | 2013-07-19 | 2015-02-02 | 大陽日酸株式会社 | Film production method of metallic thin film |
-
1980
- 1980-03-26 JP JP3837780A patent/JPS56134739A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011119751A (en) * | 2005-09-29 | 2011-06-16 | Semiconductor Energy Lab Co Ltd | Semiconductor device and manufacturing method thereof |
US10304962B2 (en) | 2005-09-29 | 2019-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2015021175A (en) * | 2013-07-19 | 2015-02-02 | 大陽日酸株式会社 | Film production method of metallic thin film |
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